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WO/2024/040468A1 |
The present disclosure provides a hybrid filter and a manufacturing method therefor, and a filtering device. The hybrid filter comprises a first substrate (100) and a second substrate (200) which are arranged opposite to each other; a fi...
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WO/2024/040679A1 |
The present application discloses a bulk acoustic resonator, a fabrication method therefor, a filter, and an electronic device. The bulk acoustic resonator comprises a substrate and an acoustic reflection structure, bottom electrode, pie...
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WO/2024/044106A1 |
The present disclosure relates to an acoustic wave device for asymmetric frequency bands and a manufacturing process for making the same. The disclosed acoustic wave device includes at least one first electrode (102:152), at least one se...
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WO/2024/043301A1 |
Provided is an elastic wave device that can reduce the size and suppress deterioration of filter characteristics of a ladder-type filter device having an elastic wave resonator that has a small capacitance and uses a thickness-shear mode...
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WO/2024/043343A1 |
Provided is an acoustic wave device capable of making a filter device smaller and reducing electric resistance in electrodes connected to potentials other than input and output potentials. An acoustic wave device 10 according to the pr...
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WO/2024/043300A1 |
Provided is an elastic wave device that makes it possible to facilitate downsizing of a filtering apparatus and to suppress degradation of filtering characteristics. An elastic wave device 10 according to the present invention is provi...
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WO/2024/043344A1 |
Provided is an elastic wave device with which a filter device can be reduced in size and the bandwidth of passband can be increased. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14 made ...
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WO/2024/043347A1 |
Provided is an elastic wave device that can inhibit unnecessary waves near the resonant frequency or near the anti-resonant frequency, even when a configuration has been adopted in which a mass-addition film is provided to an edge region...
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WO/2024/040696A1 |
A resonator provided in the present application, comprising a substrate, a bottom electrode, a piezoelectric layer, and a top electrode. The bottom electrode is located between the substrate and the piezoelectric layer, the piezoelectric...
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WO/2024/040678A1 |
A bulk acoustic resonator and a manufacturing method therefor, a filter, and an electronic device. The bulk acoustic resonator comprises a substrate (50), and acoustic reflection structures (40), bottom electrodes (10), a piezoelectric l...
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WO/2024/043346A1 |
The present invention addresses the problem of suppressing unwanted waves from occurring at a frequency lower than a resonant frequency and located near the resonant frequency in an acoustic wave device using bulk waves in a thickness sh...
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WO/2024/043342A1 |
Provided is an elastic wave device with which a filter device can be further reduced in size and an insertion loss can be reduced. An elastic wave device according to the present invention comprises: a piezoelectric film including a pi...
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WO/2024/043345A1 |
Provided is an elastic wave device that makes it possible to reduce the size of a filter apparatus and to increase the bandwidth of a pass band. A first elastic wave resonator 10 according to the present invention is provided with: a p...
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WO/2024/043299A1 |
Provided is an elastic wave device that makes it possible to miniaturize a filter device and increase the bandwidth of a passband. An elastic wave device 10 according to the present invention comprises: a piezoelectric film that includ...
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WO/2024/038831A1 |
Provided is an elastic wave device with which size reduction of a filter device can be achieved and electrical resistance can be reduced. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14;...
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WO/2024/039701A1 |
Drift-diffusion dynamics is investigated in a one-dimensional (1D) exciton guide at room temperature. Spatial engineering of the exciton energy in a WSe2 monolayer is achieved using local strain to confine as well as direct exciton trans...
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WO/2024/038875A1 |
Provided is an elastic wave device that makes it possible to achieve miniaturization of a filter device, and to reduce insertion loss. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14 of ...
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WO/2024/032882A1 |
Embodiments of the invention relate to an acoustic resonator device (100) for excitation of bulk acoustic waves (BAW) with enhanced power handling capabilities. The acoustic resonator device (100) has a composite piezoelectrical platelet...
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WO/2024/032440A1 |
A surface acoustic wave resonance apparatus and a forming method therefor, which relate to the technical field of semiconductors. The surface acoustic wave resonance apparatus comprises: a piezoelectric substrate; and an electrode struct...
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WO/2024/034603A1 |
Provided is an elastic wave device that makes it possible to reduce the size of a filter device, and to suppress degradation of filter characteristics. An elastic wave device 10 according to the present invention comprises: a piezoelec...
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WO/2024/034528A1 |
This elastic wave device for inducing oscillation of elastic waves comprises: a piezoelectric body layer containing lithium niobate; and an IDT electrode on the piezoelectric body layer. The Euler angle of the piezoelectric body layer is...
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WO/2024/027326A1 |
Disclosed in embodiments of the present application are a temperature control apparatus and a related device, which can effectively inhibit the influence of ambient temperature fluctuation on internal devices, and can improve the tempera...
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WO/2024/027735A1 |
The present invention relates to a quartz resonator and a manufacturing method therefor. The quartz resonator comprises: a quartz piezoelectric layer; a bottom electrode and a top electrode, one of the top electrode and the bottom electr...
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WO/2024/027737A1 |
The present invention relates to a quartz resonator, comprising a bottom electrode, a top electrode and a quartz piezoelectric layer, the quartz piezoelectric layer having an inverted highly-protruded structure comprising bosses; a packa...
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WO/2024/029061A1 |
This acoustic resonator comprises a first electrode (101), a piezoelectric element (102) and a second electrode (103). The first electrode (101) is constituted by a semiconductor doped with impurities. The piezoelectric element (102) is ...
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WO/2024/027734A1 |
The present invention relates to a quartz resonator and a manufacturing method therefor. The quartz resonator comprises: a bottom electrode; a top electrode; and a quartz piezoelectric layer, wherein one of the top electrode and the bott...
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WO/2024/027033A1 |
Various example embodiments relate to an acoustic resonator. The acoustic resonator may comprise a substrate, a piezoelectric membrane attached to the substrate, and a plurality of electrodes. The piezoelectric membrane presents a plural...
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WO/2024/029609A1 |
The present invention provides an elastic wave device that enables further size reduction of a filter device, and that can reduce electric resistance of wiring connected to a reference potential. An elastic wave device 10 according to ...
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WO/2024/029610A1 |
Provided is an elastic wave device that can promote miniaturization of a filter device and reduce insertion loss. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14 made of lithium niobate;...
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WO/2024/029361A1 |
Provided is an elastic wave device capable of sufficiently suppressing unnecessary waves and transverse modes outside a passband. The elastic wave device of the present invention comprises a piezoelectric substrate including a piezoele...
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WO/2024/027736A1 |
The present invention relates to a quartz resonator and a manufacturing method therefor. The quartz resonator comprises: a resonant structure, comprising a quartz piezoelectric layer, a bottom electrode, and a top electrode, wherein one ...
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WO/2024/029360A1 |
Provided is an elastic wave device capable of suppressing unwanted waves outside a pass-band and a transverse mode, and to suppress degradation of resonance characteristics. This elastic wave device comprises a piezoelectric substrate ...
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WO/2024/027920A1 |
The invention relates to method (100) for producing a surface acoustic wave, SAW, resonator device (200), the method (100) comprising: obtaining (110) an Yttrium Aluminum Garnet, YAG, layer (210); forming (120) an interleave layer (220) ...
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WO/2024/027733A1 |
A quartz resonator and a manufacturing method therefor, further relating to an electronic device. The quartz resonator comprises: a bottom electrode (40); a top electrode (30); and a quartz piezoelectric layer (10) disposed between the b...
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WO/2024/025473A2 |
An apparatus for filtering is disclosed that implements twin double-mode surface-acoustic-wave filters with opposite polarities and a geometric offset. The apparatus includes a first double-mode surface-acoustic-wave structure comprising...
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WO/2024/022736A1 |
The present invention relates to a wireless end node, that comprises a Direct Sequence Spread Spectrum (DSSS) demodulator, wherein the DSSS demodulator is based on a double correlation algorithm, a data communications module configured t...
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WO/2024/023711A1 |
The present invention offers novel ways of achieving high degree of mechanical stress isolation and high accuracy of temperature sensing in quartz crystal resonators.
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WO/2024/024614A1 |
A quartz crystal vibration plate 2 comprises an outer frame part 23 and a vibrating part 22 formed to be thinner than the outer frame part 23. A perforation 2a is formed between the outer frame part 23 and the vibrating part 22. The oute...
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WO/2024/020769A1 |
The present disclosure relates to the technical field of communications, and provides a bulk acoustic resonator and a preparation method therefor, and an electronic device. The bulk acoustic resonator of the present disclosure comprises ...
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WO/2024/024741A1 |
In a crystal oscillator 101, hermetic sealing is performed by sandwiching a crystal vibration plate 2, on which first and second excitation electrodes 221, 222 are formed, between first and second sealing members 3, 4 disposed above and ...
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WO/2024/024778A1 |
Provided is an elastic wave resonator comprising a piezoelectric layer and an IDT electrode. The piezoelectric layer is piezoelectric. The IDT electrode is positioned on a first surface of the piezoelectric layer, and comprises a plurali...
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WO/2024/021933A1 |
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The bulk acoustic resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arrange...
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WO/2024/025458A1 |
A bulk acoustic wave, BAW, (100) device with resonance-tuned layer stack is disclosed. The BAW device includes two acoustic resonators (102(A)), 102(B)) with top electrodes (104(A)), 104(B)) in different regions (108(A)), 108(B)) on a to...
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WO/2024/021844A1 |
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, an acoustic mirror, a top electrode, and a piezoelectric layer. The bottom electrode...
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WO/2024/016490A1 |
A single photon detection device (200) comprising an interference unit (100). The interference unit (100) comprises: a signal distribution module (110), configured to divide an input signal into a first signal and a second signal; a firs...
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WO/2024/016606A1 |
A semiconductor device, a communication apparatus and a manufacturing method therefor. The semiconductor device comprises: a first functional module, provided on a first substrate (100), and comprising a chip (101), an electrical connect...
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WO/2024/016095A1 |
The present application relates to the technical field of radio frequency micro-electro-mechanical systems. Provided are a filter unit and a preparation method therefor, and an electronic apparatus. The filter unit comprises: a resonant ...
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WO/2024/019142A1 |
IDT electrodes are fine and it is, therefore, necessary to improve the power tolerance to migration. This elastic wave device comprises: a piezoelectric layer; an electrode that is provided on the piezoelectric layer; and a cover part th...
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WO/2024/012653A1 |
The invention concerns a resonator filter (1) comprising a plurality coupled resonators (2); wherein in a stacking direction (S) the resonators (2) each having a rib (5) formed of piezoelectric material arranged between a first electrode...
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WO/2024/012311A1 |
A method for forming a surface acoustic wave resonance device, relating to the technical field of semiconductors. The method comprises: providing a piezoelectric substrate, the piezoelectric substrate comprising a first interval area, a ...
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