| Document |
Document Title |
|
WO/2024/014425A1 |
A cerium-based abrasive material containing composite rare earth abrasive material particles that contain lanthanum and cerium, wherein the cerium oxide content is at least 55.0 mass% of the total rare earth oxide (TREO) content, and the...
|
|
WO/2024/010249A1 |
The present invention relates to a slurry composition for polishing a copper barrier layer for chemical mechanical planarizing (CMP) of tantalum nitride or tantalum as a diffusion barrier in the presence of an interconnect structure in a...
|
|
WO/2024/004751A1 |
A polishing material slurry according to the present invention comprises: manganese oxide abrasive grains that contain manganese oxide particles; permanganate ions; phosphoric acids; and a polymer additive which contains one or more wate...
|
|
WO/2024/004750A1 |
A polishing material slurry according to the present invention comprises: manganese oxide abrasive grains that contain manganese oxide particles; permanganate ions; and phosphoric acids. A polishing method of a polishing material slurry ...
|
|
WO/2023/211707A9 |
A formulation that is an aqueous dispersion of abrasive particles and a surfactant configured to polish an external surface of plastic ophthalmic lens is provided along with a method of using such formulation to polish such lens. This fo...
|
|
WO/2023/242394A1 |
The present invention relates to a suspension of oxygenated cerium compound particles, said particles having a D50 of from 10 to 200 nm and a D90 below 1000 nm, determined by laser particle size analysis, in a liquid medium, preferably a...
|
|
WO/2023/243905A1 |
The present invention relates to a polishing slurry composition for a silicon carbide wafer, and a polishing slurry composition for a silicon carbide wafer according to an embodiment of the present invention comprises polishing particles...
|
|
WO/2023/240260A1 |
A chemical mechanical polishing (CMP) slurry can comprise a plurality of particles distributed in a carrier, wherein at least a portion of the particles of the plurality of particles can have a body including a core comprising zirconia a...
|
|
WO/2023/229009A1 |
An aspect of the present disclosure provides a grinding liquid composition that can reduce residue of silica on a substrate surface after grinding is performed, while maintaining a grinding rate. One aspect of the present disclosure pe...
|
|
WO/2023/205721A1 |
Compositions comprising an alkyloxylated decyne diol, a poly-alkylene glycol, and/or a polydi methyl silane are disclosed. Embodiments of the present disclosure may be useful for decreasing the quantity of foam present or generated in co...
|
|
WO/2023/198783A1 |
The present invention relates to improved compositions for cleansing dental appliances comprising hydrogen peroxide and at least one acid selected from the group consisting of salicylic acid, furoic acid and formic acid.
|
|
WO/2023/201189A1 |
Synthesis of polycationic polymer or copolymer is disclosed. The polycationic polymer or copolymer are formed by at least one first cationic monomer and at least one second cationic monomer wherein the first cationic monomer and the seco...
|
|
WO/2023/189512A1 |
Provided is a polishing composition that can achieve an excellent polishing/removal rate for a polishing target. The polishing composition provided by the present invention is used for polishing a polishing target. The polishing composit...
|
|
WO/2023/189400A1 |
The present invention provides: a composition for chemical mechanical polishing, the composition being capable of selectively polishing tungsten films by increasing the polishing rate of tungsten films with respect to silicon oxide films...
|
|
WO/2023/186762A1 |
The presently claimed invention relates to dielectric polishing composition and methods thereof. The presently claimed invention particularly relates to a composition comprising: (A) surface - modified colloidal silica particles comprisi...
|
|
WO/2023/192248A1 |
This disclosure relates to polishing compositions containing at least one abrasive, at least one organic acid or a salt thereof, at least one organic solvent in an amount of from about 3% to about 50% by weight of the composition, and an...
|
|
WO/2023/189812A1 |
The present invention provides a polishing composition that can realize a high-quality surface. The polishing composition includes silica particles (A), a basic compound (B), a first water-soluble polymer (C1), a second water-soluble pol...
|
|
WO/2023/183100A1 |
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, abrasive particles in the liquid carrier, a pyrophosphate compound, and a sulfonate compound or a compound including a quate...
|
|
WO/2023/181929A1 |
Provided is a polishing composition capable of imparting a high surface quality and improving the polishing rate. Specifically provided is a polishing composition containing: silica particles (A); a basic compound (B); a first water-solu...
|
|
WO/2023/181810A1 |
The present invention provides a means for speeding up polishing on an object to be polished. Provided is a polishing composition comprising abrasive grains, a dispersion medium, and a water-soluble polymer, wherein the abrasive grains a...
|
|
WO/2023/181928A1 |
Provided is a polishing composition capable of imparting a high surface quality and improving the polishing rate. Specifically provided is a polishing composition containing: silica particles that serve as abrasive grains; a basic compou...
|
|
WO/2023/180216A1 |
The present application relates to negatively charged silica particles, to a method of producing such particles, and to compositions comprising such particles as well as to a method for chemical mechanical polishing.
|
|
WO/2023/178286A1 |
Chemical mechanical planarization (CMP) polishing compositions, methods and systems using a stable colloidal abrasive particle dispersion are provided. The abrasive particles in the dispersion are amino-polyorganosiloxane-coated abrasive...
|
|
WO/2023/178003A1 |
The present Chemical Mechanical Planarization (CMP) polishing compositions, methods, and systems have low conductivity, high stability, and offer high removal rates of silicon dioxide for achieving a topographically corrected wafer surfa...
|
|
WO/2023/168780A1 |
A polishing solution having low abrasive material content and weak acidity for ultra-precise machining of optical glass, which comprises: a nano-abrasive material, a dispersant, a synergist, a suspending agent, a defoaming agent, and dis...
|
|
WO/2022/045856A9 |
Provided are cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition comprising same. Ce3+ and Ce4+ are included on the surfaces of the cerium oxide particles, and when the cerium o...
|
|
WO/2023/150244A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9. The inven...
|
|
WO/2023/150245A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a conductivity adjust selected from an ammonium salt, a potassium salt, and a combination thereof; a...
|
|
WO/2023/149925A1 |
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or ...
|
|
WO/2023/145572A1 |
The present invention provides: a polishing agent which has high selectivity between a silicon oxide film and a silicon nitride film, while being suppressed in aggregation of abrasive grains, the aggregation being a cause of polishing sc...
|
|
WO/2023/140146A1 |
The present invention provides a means which makes it possible to polish a target object at a high polishing rate and also makes it possible to maintain the surface quality of the polished target object at a good level. The present inv...
|
|
WO/2023/125884A1 |
The present invention provides a method for synthesizing cerium oxide, comprising: S1, preparing a cerium source aqueous solution, and doping the cerium source aqueous solution with a rare earth element; S2, preparing a precipitant aqueo...
|
|
WO/2023/124975A1 |
Disclosed are an ion exchange resin applied to dry electropolishing of metal workpieces and a use thereof. The ion exchange resin is an organic, slightly acidic cation exchange resin with a porous structure; the ion exchange resin contai...
|
|
WO/2023/124980A1 |
A particulate matter applied to solid electrolytic polishing of a metal part and an application method. The particulate matter is solid particles of a porous structure; the particulate matter contains hydroxyl groups, and the interiors a...
|
|
WO/2023/125890A1 |
Disclosed is a method for synthesizing cerium oxide, comprising the following steps: S1, preparing raw materials, wherein a cerium source aqueous solution and an alkaline precipitant solution are prepared; S2, carrying out crystallizatio...
|
|
WO/2023/127898A1 |
In one embodiment, provided is a polishing liquid composition for a silicon oxide film, the polishing liquid composition being capable of improving the smoothness of a polished substrate surface while maintaining polishing speed. The p...
|
|
WO/2023/127775A1 |
[Problem] To provide a composition which maintains the hydrophilicity and does not lose dispersibility or film properties even in an environment having a thermal history, while being adaptable to the heat generation during polishing. [So...
|
|
WO/2023/116867A1 |
The present invention provides a chemical mechanical polishing slurry, comprising cerium oxide particles, an anionic compound, a cationic compound, an inhibitor and a pH regulating agent, wherein the inhibitor is a non-ionic polymer comp...
|
|
WO/2023/121037A1 |
The present invention relates to a polishing slurry composition, and more specifically to a polishing slurry composition for polysilicon polishing, the composition comprising: colloidal silica abrasive particles; a quaternary ammonium ca...
|
|
WO/2023/116860A1 |
An insulating film polishing solution, comprising cerium oxide, an anionic polymer, a cationic polymer, an insulating film inhibitor, and water. The pattern polishing rate of the polishing rate of the insulating film polishing solution i...
|
|
WO/2023/109515A1 |
A method for synthesizing cerium oxide, comprising: S1, preparing a reaction solution: preparing a cerium source aqueous solution and a precipitant aqueous solution; S2, precipitation reaction: adding the precipitant aqueous solution to ...
|
|
WO/2023/102389A1 |
The present invention discloses Chemical Mechanical Planarization (CMP) polishing compositions, methods and systems that offer high and near equal removal rates of silicon dioxide and silicon nitride for achieving a topographically corre...
|
|
WO/2023/098719A1 |
Disclosed is a method for preparing a cerium oxide nanocomposite. The method comprises: step 1, bringing an anionic surface modifier into contact with an aqueous dispersion of cerium oxide nanoparticles to prepare a cerium oxide nanocomp...
|
|
WO/2023/102392A1 |
This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. CMP slurries comprising silica particles optionally treated with alkoxy sil...
|
|
WO/2023/098716A1 |
The present invention provides a method for preparing an organic-inorganic nanocomposite particle dispersion liquid. The method comprises: preparing a negatively charged organic-inorganic nanocomposite particle dispersion liquid: adding ...
|
|
WO/2023/095871A1 |
An alumina powder satisfying the following relationship (1). Relationship (1): Rsp/(total surface area of alumina powder)≤12.0 Rsp and the total surface area of alumina powder in relationship (1) are obtained respectively using the fol...
|
|
WO/2023/085007A1 |
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing...
|
|
WO/2023/086783A1 |
A novel pad-in-a-bottle (PIB) technology and PIB-type advanced chemical-mechanical planarization (CMP) Copper or THROUGH-SILICON VIA (TSV) CMP compositions, systems and processes have been disclosed. The role of conventional polishing pa...
|
|
WO/2023/085009A1 |
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A ch...
|
|
WO/2023/085008A1 |
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A ch...
|
