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WO/2022/203052A1 |
[Problem] To provide: a sliding member and a coating film which exhibit chipping resistance and abrasion resistance, has excellent peeling resistance (adhesiveness), and achieves smaller friction. [Solution] Provided is a sliding member ...
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WO/2022/204001A1 |
A plasma processing system used for reactive sputtering may include multiple dual magnetron sputtering (DMS) components. Each DMS component may include a power supply coupled with two electrodes that switch between operation as a cathode...
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WO/2022/156820A9 |
A composite multi-layer thin film structure deposited on a metal substrate, the method thereof are provided. The film structure includes a first thin film layer on a surface of the metal substrate including Al 2O 3 with a thickness rangi...
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WO/2022/202170A1 |
This gas barrier film is provided with an organic substrate and an inorganic transparent barrier layer provided on one side of the organic substrate, wherein the inorganic transparent barrier layer contains a barrier material as the prim...
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WO/2022/201986A1 |
Provided is an AIN single crystal substrate in which the occurrence of cracks is suppressed. This AIN single crystal substrate has a three-layer structure that, in terms of defect density, can be divided into a first layer, a second laye...
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WO/2022/202941A1 |
An electrode (1) comprises a base material film (2), a metal underlayer (3), and a conductive carbon layer (4). The ratio (O/C) of oxygen to carbon is less than 0.01, as measured using X-ray photoelectron spectroscopy, at a position 4.5 ...
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WO/2022/202715A1 |
An electrode (1) comprises, sequentially in the thickness direction, a resin film (2) and a conductive carbon layer (4). The conductive carbon layer (4) has an sp3 bond. The heat shrinkage factor of the electrode (1) when heated for one ...
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WO/2022/203320A1 |
Disclosed are a patterned thin film deposition apparatus and a method for forming a sublimable material film using same. The thin film deposition apparatus disclosed herein may comprise: a source container in which a source material for ...
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WO/2022/198814A1 |
Disclosed are a superhydrophobic modified film, a modification method, a triboelectric nanogenerator (TENG) composed thereof, and a preparation method. A PE film is sequentially etched and deposited by using an inductively coupled plasma...
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WO/2022/200906A1 |
Provided is a manufacturing apparatus capable of continuous processing of steps from machining to sealing of an organic compound film. This manufacturing apparatus is capable of continuously performing a light emitting device patterning ...
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WO/2022/200507A1 |
The present invention relates to a battery half-cell comprising a copper foil, a lithium anode layer deposited on a surface of the copper foil and a capping layer, preferably a conformal capping layer, deposited on the lithium anode laye...
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WO/2022/202381A1 |
The present invention provides: a piezoelectric film which has achieved a good balance between high withstand voltage and long-term reliability; a piezoelectric element; and a method for producing a piezoelectric film. A piezoelectric ...
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WO/2022/196431A1 |
A bottom-gate thin film transistor which comprises: a gate insulating film that is arranged on a gate electrode; an oxide semiconductor layer that is arranged on the gate insulating film; and a first electrode and a second electrode, whi...
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WO/2022/196555A1 |
A surface-coated cutting tool wherein a coating layer includes a layer in which a first layer and a second layer are laminated in an alternating manner with an average thickness of 0.1-10.0 μm. The first layer has an average thickness o...
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WO/2022/197796A1 |
Described are substrates that include high aspect ratio surfaces and non-high aspect ratio surfaces, at least two coatings, one coating at high aspect ratio surfaces and a second coating at non-high aspect ratio surfaces, and having fluo...
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WO/2022/194377A1 |
A method of depositing at least one material on a substrate is described. The method includes a first deposition including: sputtering from a first and a second rotary target through an aperture, the aperture being adjustable and having ...
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WO/2022/196637A1 |
The present invention provides a coated tool, a substrate of which is a cBN sintered compact in which the average particle diameter of cBN particles is 2.5-6.0 µm and the content thereof is 40-70 vol%, a coating layer having an R of 0.1...
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WO/2022/196435A1 |
The present invention is a thin-film transistor having an oxide semiconductor layer. The oxide semiconductor layer has a ZnGaO-based oxide in which the molar ratio of Zn with respect to the total of Ga (gallium) and Zn (zinc) is 35% incl...
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WO/2022/194547A1 |
According to various embodiments, a vacuum chamber body (151) can comprise: a plurality of chamber outer walls (151a to 151e) which peripherally surround a cavity (151h), of which a first chamber outer wall (151a) delimits the cavity (15...
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WO/2022/197723A1 |
Embodiments of methods and apparatus for reducing particle formation in physical vapor deposition (PVD) chambers are provided herein. In some embodiments, a method of reducing particle formation in a PVD chamber includes: performing a pl...
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WO/2022/196915A1 |
According to one embodiment of the present invention, provided is a method for preparing a low-loss hydrogenated amorphous silicon nitride that is transparent in visible light, comprising the steps of: providing a substrate; and depositi...
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WO/2022/191428A1 |
A sputtering target according to an aspect of the present invention may comprise a substrate; and an alloy target layer, disposed on the substrate, having an amorphous phase at a ratio of 98.0% or higher.
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WO/2022/190929A1 |
This transparent barrier film (1) is provided with a transparent polymer film (2) and a transparent oxide film (3) sequentially toward at least one side in the thickness direction. The transparent oxide film (3) contains zinc, tin and a ...
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WO/2022/192640A1 |
An optical device is provided. The optical device includes an optical device substrate having a first surface; and an optical device film disposed over the first surface of the optical device substrate. The optical device film is formed ...
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WO/2022/190930A1 |
A transparent oxide film (1) is provided with a transparent polymer film (2) and a transparent oxide film (3) in the indicated sequence toward at least one side in the thickness direction. The transparent oxide film (3) contains zinc, ti...
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WO/2022/192296A1 |
Embodiments of coils for use in process chambers are provided herein. In some embodiments, a coil for use in a process chamber includes: a coil body having a first end portion and an opposing second end portion coupled to the first end p...
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WO/2022/189033A1 |
The present invention relates to a method for applying a strain tolerant oxide coating on a substrate, the strain-tolerant oxide comprising zirconia or zirconate as main component, characterized in that the strain tolerant oxide is appli...
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WO/2022/188428A1 |
The present application provides a mask plate assembly and evaporation equipment, to effectively reduce the probability of generating wrinkles on a first mask plate, and effectively avoid edge color mixing. The mask plate assembly compri...
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WO/2022/191370A1 |
The present invention relates to an apparatus for manufacturing a pre-oxidized porous metal thin film, a method for manufacturing a porous metal oxide thin film, and the porous metal oxide thin film manufactured thereby. An apparatus for...
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WO/2022/191752A1 |
A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) a...
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WO/2022/188645A1 |
Disclosed in the present invention are a sputter coating apparatus and a sputter coating assembly. The sputter coating apparatus is used for bombarding a target so as to form a film layer on the surface of a substrate by means of sputter...
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WO/2022/191751A1 |
A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) a...
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WO/2022/186551A1 |
The present invention relates to a semiconductor packaging method and, more particularly, to a semiconductor packaging method for packaging a semiconductor device in a wafer level packaging scheme. The semiconductor packaging method acco...
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WO/2022/186117A1 |
Provided is an optical recording medium which can shorten takt time. The optical recording medium includes at least one layer of a recording layer. The recording layer comprises an oxide of Bi.
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WO/2022/185859A1 |
This hot-rolled copper alloy sheet comprises 0.2-2.1 mass% of Mg, 0.4-5.7 mass% of Al, and at most 0.01 mass% of Ag, with the remainder made up of Cu and unavoidable impurities. The area ratio of the Cube orientation (area ratio of cryst...
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WO/2022/184680A1 |
A method of conditioning a coater for removing water and/or moisture from a processing area of the coater is provided, the processing area comprising at least one pump compartment (10) and at least one sputtering compartment (11). The me...
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WO/2022/186628A1 |
Embodiments of the present disclosure relate to a deposition material, a method for preparing the deposition material, and a deposition method and, more specifically, can provide: a deposition material which, by comprising a first surfac...
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WO/2022/184848A1 |
The invention relates to a method for coating a sanitary component (1), comprising at least the following steps: a) providing the sanitary component (1), the sanitary component (1) having at least one liquid channel (2); and b) at least ...
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WO/2022/184585A1 |
The present invention relates to the coating of spectacle lenses (3) by physical vapor deposition (PVD). A method for physical vapor deposition is presented, the method comprising: providing a crucible comprising a first evaporation mate...
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WO/2022/184881A1 |
A method of depositing a layer on a piece by sputter deposition, a coater and a processor for controlling a coater in accordance with the method are provided. The method includes providing deposition of metallic and reactive species simu...
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WO/2022/184879A1 |
A target for sputtering, use of said target and method of manufacture of said target is provided.The target has a single piece target material for sputter deposition, with at least 1 mm, for example at least 2 mm, such as 4 mm or more of...
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WO/2022/187340A1 |
A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness;...
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WO/2022/185858A1 |
This hot-rolled copper alloy sheet comprises 0.2-2.1 mass% of Mg and 0.4-5.7 mass% of Al, with the remainder made up of Cu and unavoidable impurities. Among the unavoidable impurities, the Fe content is at most 0.0020 mass%, the O conten...
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WO/2022/186004A1 |
Provided are a substrate with multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device with which it is possible to prevent, inter alia, a reduction in the reflectivity...
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WO/2022/180961A1 |
[Problem] The purpose of the present invention is to provide aluminum nitride to which scandium having nitrogen polarity is added. [Solution] A nitride material which is represented by chemical formula ScXMYAl1-X-YN, and which is charact...
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WO/2022/183136A1 |
A plasma-enhanced chemical vapor deposition coating system includes a deposition chamber including one or more zones of processing, an electrode centrally located within the deposition chamber, wherein the electrode forms a central axis ...
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WO/2022/178984A1 |
The present invention discloses a coating surface modification device based on a thermal spraying process and a working method, solves the problems in the prior art of surface oxidation and non-uniformity of a coating, and achieves the b...
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WO/2022/182994A1 |
Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapo...
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WO/2022/180914A1 |
[Problem] To provide: a vacuum device which is reduced in the amount of a residual gas under vacuum, while being satisfactory in terms of cost, strength and the like; and a method for producing a vacuum processed body. [Solution] A vacuu...
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WO/2022/181012A1 |
Provided is a vapor deposition source for vacuum deposition devices in which, when a crucible filled with a vapor deposition material is heated via induction heating, the entirety of the crucible, including a cap body, takes on a top-hea...
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