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JP2007201459A |
To provide an improved composition for surface treating which finishes a surface with high smoothness while minimizing damage on a base material when a Si base material is cleaned and/or etched in a process for manufacturing a single cry...
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JP3945964B2 |
To effectively remove abrasive grains adhered on the surface of a polished article or inside a polishing apparatus after polishing. A polishing agent is obtained by dispersing abrasive grains consisting of either organic or inorganic sub...
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JP2007154205A |
To provide an improved cleaning and etching composition which can furnish high smoothness and high gloss together with minimizing the damage of substrate when on cleaning and etching the surface of SiO2 on the substrate.The composition c...
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JP3935267B2 |
To obtain a new compound excellent in resolution properties and capable of providing a chemical amplification type resist affording a resist pattern of a good cross-sectional shape. This compound is represented by formula I [R1 and R2 ar...
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JP2007142285A |
To provide polishing solution for metal exhibiting quick polishing speed and good copper/tantalum polish selectivity and enhancing planarity by suppressing dishing.Polishing solution for metal used in chemical mechanical planarization of...
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JP2007142303A |
To provide a metal polishing solution which has a high chemical-mechanical polishing speed, improves the flatness with a little dishing, and improves the copper/tantalum selectivity, thereby enabling the manufacture of an LSI.The metal p...
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JP3919057B2 |
To provide a polishing solution composition which can maintain the polishing speed of a metallic layer on a surface to be polished having an insulating layer and the metallic layer, can suppress the etching rate of the surface, and can p...
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JP2007119919A |
To provide an etching method for etching a non-conductive substrate surface, especially a polyamide surface or an ABS plastic surface before a metal layer is formed on the surface; and an etching solution.The etching method comprises tre...
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JP3915008B2 |
To obtain an agent for removing the adherent silicone coating film from the surface of glass uniformly, rapidly and simply without injuring the surface by mixing water with a specified acidic fluoride compound. Water is mixed with 0.15-1...
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JP3912927B2 |
To provide a polishing solution composition which is capable of enhancing a metal film in polishing rate and effectively protecting a metal wiring layer against dishing or the like, where the surface of a work to polish is possessed of a...
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JP3909321B2 |
To provide a method and a device for treating silicon in a wet chemical manner by using an etchant containing water, nitric acid and hydrofluoric acid. The etchant is activated by introducing a nitrogen oxide (NOx) to the etchant before ...
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JP3907245B2 |
To stabilize an acid hydrogen peroxide soln. containing iron by adding phenylglycol ethers and cyclic satd. alcohols into the acid hydrogen peroxide soln. containing iron. An acid hydrogen peroxide soln. containing iron is stability by a...
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JP3902897B2 |
To provide a polishing solution for a metal and a method of polishing a substrate using the polishing solution for the metal, wherein superfluous layers of a buried film made of the metal, etc., can be removed and planarized efficiently,...
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JP3903215B2 |
To provide an etchant which is capanble of etching a non-doped oxide film and a doped oxide film at the same speed by a method wherein the etchant has etching properties where the etching rates of a thermal oxide film and a boron phospho...
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JP3898871B2 |
To obtain a polishing slurry which prevents the production of noise associate with a polisher by mixing polishing grains of a specified size with water, an accelerator for chemically attacking a surface, and starch for diminishing the vi...
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JP2007073901A |
To provide a polishing solution which attains satisfactory dishing performance of a matter to be polished which is used for chemical and mechanical flattening in manufacturing of a semiconductor device, and to provide a chemical and mech...
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JP2007067358A |
To provide an etchant for etching a silicon substrate with high accuracy in a short time, an etching method and a method for manufacturing a liquid injection head.An amount of Fe larger than a specified quantity is added to an alkaline s...
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JP2007051200A |
To provide an etching composition suppressing the etching of a polysilicon at a room temperature and capable of accelerating the etching rate of the polysilicon in a heated state.This composition for silicon etching is provided by contai...
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JP2007036102A |
To improve productivity by sharing a masking film in processes of anodization, heating press, and etching in a production of copper clad laminate using an aluminum plate.The method comprises the processes of: sticking a masking film (12)...
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JP2007031760A |
To simply and safely peel a gold-plated part at which gold is plated on a resin through a medium of a metallic underlayer, from the resin, collect the gold film, and recycle gold.This peeling method comprises the steps of: corroding the ...
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JP3878972B2 |
A gas composition, for cleaning the interior of CVD chambers or etching a thin film comprising a silicon-containing compound or compounds, comprises FNO and further comprises O 2 and/or one or more inert gases.
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JP3871257B2 |
A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting...
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JP2006343604A |
To provide a cleaning liquid for photolithography which is excellent in strippability of a photoresist layer disposed on a substrate made by forming both of metal wiring and an inorganic material layer (polysilicon film etc.), is excelle...
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JP3837277B2 |
To obtain an aqueous dispersion for chemical machine polishing useful for polishing copper, having a high polishing rate, capable of decreasing an erosion rate in overpolishing. This aqueous dispersion for a chemical machine polishing co...
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JPWO2005019499A1 |
Formed on a conductive metal containing hydrogen fluoride, organic solvent and water, with a weight ratio of hydrogen fluoride: organic solvent: water of 0.001-10% by weight: 70-99.998%: 0.001-20% by weight. A removal solution for removi...
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JP3835488B2 |
To obtain an aqueous hydrogen peroxide solution with small amount of organic substance content by carrying out solid-phase precipitation process in a specified condition for an aqueous hydrogen peroxide raw solution in the case of refini...
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JP3831121B2 |
To provide a process for smoothening the processed surface of a micro part made from a polymeric material in good reproducibility. This micro-part having a desired shape is produced by forming a film (UV-curing epoxy resin forming layer)...
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JP3829240B2 |
A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.
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JP3825246B2 |
To inhibit dishing and erosion generated in the chemical-mechanical polishing(CMP) of a copper-based metal film, when an embedded wiring of the copper-based metal film is formed on a barrier metal film of a tantalum- based metal. This sl...
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JP3822339B2 |
To obtain the subject composition having no potential integrated circuit-contaminating substances per se, capable of providing high-speed abrasion, and stable and active for a long period after its preparation, by including oxidizing age...
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JP3816743B2 |
To control dishing and erosion occurring on the chemical and mechanical polishing(CMP) of a copper-based metal film, when a copper-based metal- embedded wiring is formed on a barrier metal film comprising a tantalum-based metal. CMP is c...
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JP2006222453A |
To provide a method for manufacturing a silicon wafer in which the surface roughness and the overall flatness of a wafer can be prevented from deteriorating, and to provide a silicon wafer manufactured by that method.The method for manuf...
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JP3797593B2 |
To provide a mixed acid liquid in etching which is suitably used for planarizing a semiconductor wafer or improving its glossiness required for the wafer. The mixed acid liquid contains hydrofluoric acid, phosphoric acid, nitric acid and...
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JP3791597B2 |
To provide an etchant in which an etching residue is not generated at all when a transparent conductive film undergoes wet etching and the wet etching can be conducted under gentle conditions while suppressing bubbling. An aqueous soluti...
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JP3775176B2 |
To provide a semiconductor wafer manufacturing method and apparatus, capable of obtaining high planarity surface of a semiconductor wafer at a low cost, even by single-side polishing as well as by double-side polishing, without having to...
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JP2006118012A |
To provide a surface treatment agent for metal, which is used for imparting a metal excellent corrosion resistance and alkali resistance, and does not contain chromium; a surface treatment method; and a surface-treated metallic material....
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JP3770718B2 |
To safely and efficiently perform cleaning of a base material without giving any damage to the base material by removing ammonium fluoride attached and accumulated on the base material by its reaction with ClF3 gas or the like. A base ma...
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JP3768402B2 |
To provide slurry for chemical-mechanical polishing that inhibits the generation of dishing, and at the same time, achieves polishing at a high polishing rate in chemical-mechanical polishing in a copper-based metal film, formed on an in...
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JP3768401B2 |
To provide slurry for chemical-mechanical polishing, that inhibits generation of dishing, and at the same time, achieves polishing at a high polishing speed in chemical-mechanical polishing in a metal film formed on an insulating film ha...
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JP2006100570A |
To provide a polishing composition which is suitable for a polishing liquid to be used for chemical mechanical polishing (CMP) in manufacturing a semiconductor device and has a rapid CMP speed and has little occurrence of dishing and can...
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JP2006100538A |
To provide a polishing composition which is suitable for a polishing liquid to be used for chemical mechanical polishing in manufacturing a semiconductor device and has a rapid CMP speed and can perform chemical mechanical polishing with...
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JP2006100550A |
To provide a polishing solution material for metals for manufacturing an LSI which has rapid CMP velocity, ensures uniformity on a wafer surface and generates less corrosion, scratch, thinning, dishing, erosion or the like.The polishing ...
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JP3765172B2 |
To provide a method for producing fluorinated ether, hardly producing by-product, in high conversion. This method for producing fluorinated ether comprises subjecting 1,1,2,2-tetrafluoroethylmethyl ether to contact reaction with fluorine...
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JP3765970B2 |
To accurately and rapidly etch the resin layer of polyamide without using any amine. This etching liquid contains 3 wt.%-65 wt.% of diol having 3-6 carbons and triol having 4-6 carbons, 10 wt.%-55 wt.% alkaline compound, and water that i...
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JP2006093580A |
To provide a chemical mechanical polishing method suitable to a semiconductor integrated circuit wherein its CMP speed is maintained and its dishing, etc. is generated scarcely.The chemical mechanical polishing method has a process for f...
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JP2006093467A |
To provide a polishing fluid for metal that improves chemical/mechanical polishing speed remarkably, reduces dishing, and can manufacture improved LSIs.The polishing fluid for barrier metals contains at least one of oxidizer, a compound ...
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JP2006049790A |
To provide a polishing liquid for metal for manufacturing an LSI which has a quick CMP (chemical mechanical polishing) speed, keeps a uniformity within a wafer face, and generates little corrosion or scratch, thinning, dishing and erosio...
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JP2006504847A |
A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride so...
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JPWO2004030062A1 |
A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group c...
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JP3736249B2 |
To provide an aqueous dispersant for chemical mechanical polishing which can form sufficiently flattened good damascene wiring and is used in the manufacture of a semiconductor device and a chemical mechanical polishing method using the ...
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