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JP3575859B2 |
PURPOSE: To flatten the surface of a semiconductor substrate so that the possibility of contamination of the surface of the substrate with a metallic impurity can be eliminated and particles can be removed from the surface of the substra...
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JP3577002B2 |
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JP2004281753A |
To provide an abrasive composition which can solve the problem that, when a semiconductor device having a copper film and a tantalum compound is polished, the polishing selectivity ratio of the copper and tantalum compound is insufficien...
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JP2004281865A |
To provide a polishing method of GaN whereby an etch pit is hardly caused on the polishing face of a GaN crystal and an excellent polishing face can be obtained.The polishing method of GaN includes a step of using polishing liquid obtain...
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JP2004277576A |
To provide a method for simply preparing a solution usable for the use of etching and cleaning.The preparation method of the solution for etching or cleaning is provided, wherein the solution is characterized by containing (1) at least o...
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JP2004281848A |
To provide an abrasive composition that can solve the problem that, when a semiconductor device having a copper film and a tantalum compound is polished, the polishing selection rates of the copper and tantalum compound do not become suf...
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JP2004276219A |
To provide an electrolytic machining liquid reducing a polishing speed of copper, which is a wiring layer, up to at least a speed equivalent to that of a barrier layer and capable of planarizing the surface of a copper film flush with th...
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JP2004530301A |
The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask app...
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JP3570543B2 |
To selectively polish a surface to be polished at a stable polishing speed without generation of flaw in a highly flat condition. This method performs polishing on a surface to be polished by using a mixed liquid of 0.5-10 wt.% of a liqu...
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JP3563405B2 |
Aqueous compositions comprising certain amino acids such as polyaspartic acid or aspartic acid/glutamic acid copolymers when at least partially protonated at pH of 7 or below effectively clean ferrous metal surfaces by contacting said su...
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JP2004238533A |
To obtain a releasing agent composition for polyimide films for regenerating liquid crystal substrates, and to provide a method for regenerating the liquid crystal substrates by using the releasing agent composition.This releasing agent ...
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JP3556978B2 |
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JP2004235326A |
To provide polishing solution for metal exhibiting a high CMP rate and capable of fabricating an LSI while suppressing occurrence of corrosion, scratch, thinning, dishing, erosion, and the like.The polishing solution being used for chemi...
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JP2004235319A |
To provide polishing solution for metal exhibiting a high CMP rate and capable of fabricating an LSI while suppressing occurrence of corrosion, scratch, thinning, dishing, erosion, and the like.The polishing solution being used for chemi...
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JP2004231748A |
To provide a metal polishing solution which exhibits a high chemomechanical polishing (CMP) rate and enables the preparation of an LSI less prone to cause corrosion, scratch, thinning, dishing, erosion, etc., to occur.The metal polishing...
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JP3556661B1 |
To provide an aqueous solution for removing a silica glass film, which is inexpensive and has an extremely high removal ability of the silica glass film, and also considers safety and handleability, and a method for removing the silica g...
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JP2004524440A |
Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally in...
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JP3543707B2 |
To suppress etching liquid odor and to reduce the influence of light on the etching behavior in the process. For a wet etching liquid for selective etching of a semiconductor layer, containing Al in a multilayer film of AlGaInP-based com...
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JP2004193231A |
To provide a substrate washing method capable of obtaining a clean and stabilized semiconductor surface without leaving unnecessary organic substance or an oxide film on the surface of the substrate.A semiconductor substrate 9, on the su...
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JP2004175839A |
To provide an etchant giving a good etching factor by incorporating thereinto as an additive an adjusted organic compound for preferentially suppressing side etching, and an etching method.The etchant is constituted of cupric chloride, h...
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JPWO2002066452A1 |
Provided are a method for producing a useful fluorinated cyclic unsaturated ether and a fluorinated saturated cyclic ether from an inexpensive raw material. Further provided are useful uses of fluorinated cyclic unsaturated ethers and fl...
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JP2004172576A |
To provide a method of microfabricating trench wiring of 0.1μm generation or beyond, with which the load on a polishing process is reduced by forming trench wiring of copper by an etching method using an etching liquid which prevents ga...
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JP2004149770A |
To obtain an improved cleaning composition for metals, more practically, an improved cleaning composition for metals which improves metal saturation and crystallization in microetching at fabrication of a microelectronic package.The comp...
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JP2004141990A |
To provide electrolytic polishing composition which applies electrolytic current to polish a work-piece made of copper or copper alloy at a high speed even at a low polishing pressure without melting a metal layer to be polished during e...
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JP2004137519A |
To provide a method for controlling an etching liquid by which the concentration of each component changing with the lapse of time in a repeatedly used etching liquid for a metal-like material can easily and almost fixedly be maintained....
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JP3522475B2 |
To suppress the deterioration of TTV(total thickness variation) by etching to 5% or less in etching depth and to lower the glossiness of a wafer. When the etching speed is 7 to less than 40μm/min, the degree of viscosity is 1.4 to 18.5m...
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JP2004123930A |
To provide a polishing solution which exhibits a polishing speed high enough, does not cause corrosion and dishing on the surface of a metal, and forms a highly reliable embedding pattern of a metal film; and a polishing method using the...
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JP2004109296A |
To provide a photoresist and an etching method for fabricating fine pitch, high definition and high resolution etched components.A resist pattern 21a of a photosensitive hot melt resist comprising a base resin selected from the group con...
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JP3507628B2 |
To obtain an abrasive composition for chemical-mechanical polishing which has such a high polishing rate as to permit effective polishing and can give a finished surface reduced in the formation of corrosion specks and in dishing by mixi...
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JP2004507899A |
A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer includes use of a slurry that is formulated so as to oxidize copper at substantially the ...
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JP3502365B2 |
To provide an etchant composition which can eliminate a side etching phenomenon, a phenomenon of the change with time and a residue generating phenomenon generated in etching for an ITO(indium tin oxide) film and defects in etching of th...
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JP2004504439A |
A flexible circuit comprising a liquid crystal polymer film having through-holes and related shaped voids formed therein using an etchant composition comprising a solution in water of from about 35 wt. % to about 55 wt. % of an alkali me...
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JP2004503081A |
The present invention relates to an aqueous etching solution, a method for tailoring the composition of the solution to provide a desired surface quality for a given quantity of stock to be removed, a process for etching a silicon wafer ...
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JP2004502860A |
In accordance with the invention, there is provided a chemical-mechanical polishing slurry for polishing a substrate. The slurry is comprised primarily of abrasive particles and an oxidizing agent, wherein the slurry exhibits a stability...
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JP2004006628A |
To enable CMP at high rate for copper or copper-based alloy while suppressing polishing scratches, dishing and erosion and particularly enable CMP for copper or copper-based alloy on an easily delaminating low dielectric constant insulat...
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JP3473580B2 |
To provide an etching method of ZnSe poly crystal, which is improved to obtain a flat etching surface. The ZnSe poly crystal 1 is etched by the reactive ion etching method using chlorine gas which does not included a hydrocarbon group.
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JP2003536242A |
An etching solution of Hydrogen Fluoride (HF), carboxylic acid and water having a high etch selectivity for silicon oxide relative to metal, polysilicon and nitride. The etching solution is created by injecting anhydrous HF into a carbox...
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JP2003338470A |
To form a uniform element separation oxide film on a semiconductor element.The polymer of hydrocarbon compound containing carbonyl, nitrile or amide affecting group is added to a CMP slurry composition for an oxide film. Further, the CMP...
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JP2003338471A |
To provide a forming method of slurry for CMP which is superior in grinding selection ratio with respect to polycrystalline silicon compared with an oxide film, and the forming method of a semiconductor element for forming the self align...
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JP2003535452A |
The invention comprises copper chemical-mechanical polishing processes using fixed abrasive polishing pads, and copper layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasi...
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JP3468412B2 |
To provide a cleaning gas having no global warm-up coefficient for eliminating unwanted deposits deposited on the inner wall of a device, a tool, or the like in the device for manufacturing a thin film, a thick film, a pulverulent body, ...
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JP2003533890A |
Substantially transparent electrodes are formed on a substrate by a process including forming on the substrate, in order, a bottom high index layer, a metallic conductive layer, and a top high index layer with a conductivity of at least ...
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JP2003306676A |
To provide an etching agent enabling an amorphous ITO film to be etched under a mild condition without causing etching residue at all.The etching agent comprises an aqueous solution containing oxalic acid and a carboxylic acid.
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JP2003531807A |
The invention relates to novel etching media in the form of printable, homogenous, particle-free etching pastes with non-Newtonian flow properties for the etching of inorganic surfaces, in particular, of glasses, preferably on silicon ox...
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JP2003532303A |
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects...
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JP2003297791A |
To provide treatment liquid of a semiconductor substrate in which impurities, e.g. metals, particles and organic matters, can be removed while controlling the corrosion of a metal or a metal compound, and a treatment method employing it....
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JP2003289054A |
To provide a manufacturing method of a metal polishing composition of which the etching performance is controlled low and which suppresses a defect on a polished surface such as scratch and erosion.In the manufacturing method of the meta...
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JP2003277734A |
To easily separate a metal wiring contact plug in production of a semiconductor element.A CMP slurry for a metal is prepared by adding an oxidizing agent and a complexing agent to a normal acidic CMP slurry for an oxide film. The CMP slu...
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JP2003273045A |
To easily separate a metal wiring contact plug in a composite film, constituted of two or above films selected from among a metal film, a nitride film and an oxide film.The composite film formed of two or above films selected from among ...
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JP2003273044A |
To provide a polishing component for CMP, with which high-polishing rate is realized by the content of polishing accelerator and a polishing material at a low concentration and inconvenience such as dishing and erosion can be reduced and...
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