| Document |
Document Title |
|
JP6239734B2 |
A method of regenerating an etch solution comprising a metastable complex of manganese(III) ions in a strong acid is described in which at least a portion of the manganese(III) ions in the metastable complex have been destabilized, causi...
|
|
JP2017171992A |
To provide an etching liquid composition for silver-containing material capable of etching a silver-containing material at higher speed while suppressing generation of residues mainly containing silver chloride in spite of containing hyd...
|
|
JP6174935B2 |
|
|
JP6161274B2 |
The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching comp...
|
|
JP6135999B2 |
There is provided an etching liquid composition for a multilayer film containing copper and molybdenum. The etching liquid composition comprises: (A) a peroxosulfate ion source; (B) a copper ion source; and (C) at least one nitrogen comp...
|
|
JP6131959B2 |
An etching material including at least one boron compound selected from a Lewis acid that includes, in its structure, boron and a halogen that is bonded to the boron, a salt of the Lewis acid and a compound that generates the Lewis acid.
|
|
JP2017511843A |
An electroplating rack for supporting a non-conductive substrate during the electrodeposition process is described. The electroplating rack is coated with a non-conductive material such as PVC plastisol. The electroplating rack is treate...
|
|
JP6060270B2 |
An electrolytic cell and a method of electrochemical oxidation of manganese (II) ions to manganese(III) ions in the electrolytic cell are described. The electrolytic cell comprises ( 1 ) an electrolyte solution of manganese(II) ions in a...
|
|
JP6031939B2 |
To provide a novel composition which can be used as etching paste.A composition contains the following components (A) and (B): (A) boron trifluoride complex salt and (B) ionic liquid including a fluorine atom.
|
|
JP6010535B2 |
To provide an etchant for copper oxide, control of the etching rate, and etching method using the same for enabling exposed portions to be selectively etched against unexposed portions in the case of performing exposure with laser light ...
|
|
JP5965900B2 |
The present invention relates to an azeotropic or azeotrope-like mixture consisting essentially of 1,1,1,2,3,3-hexafluoropropane, hexafluoropropene and hydrogen fluoride.
|
|
JP5958600B2 |
|
|
JP2016134436A |
To provide an etching liquid for copper oxide suitable for uniform fine patterning.An etching liquid for copper oxide contains water, and a component for dissolving copper oxide, and the iron ion concentration of which is 1000 ppm or les...
|
|
JP5895066B2 |
A method of preparing a solution capable of etching a platable plastic. The method comprises the steps of: (a) providing an electrolyte comprising a solution of manganese(II) in a solution of 9 to 15 molar sulfuric acid or phosphoric aci...
|
|
JP5885993B2 |
|
|
JP5830807B2 |
The present invention relates to a composition for etching treatment of a resin material, the composition comprising an aqueous solution having a permanganate ion concentration of 0.2 mmol/L or more and a total acid concentration of 10 m...
|
|
JP5827623B2 |
The present invention refers to a method for contactless deposition of new etching compositions onto surfaces of semiconductor devices as well as to the subsequent etching of functional layers being located on top of these semiconductor ...
|
|
JP2015526880A |
An improved method for etching transparent conductive oxide layers placed on flexible polymer substrates, hard substrates such as glass, or silicon wafers is a novel etching paste that is activated by irradiation. Including the use of.
|
|
JP5734259B2 |
|
|
JP5733304B2 |
Disclosed are: an ink for conductive polymer etching, which has excellent etching ability for conductive polymers and provides a pattern with high accuracy; and a method for patterning a conductive polymer using the ink for conductive po...
|
|
JP2015083682A |
To provide: novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells; a method for using the same; and an etching and doping composition which is suitable both for the...
|
|
JP5710585B2 |
In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist mater...
|
|
JP5698897B2 |
The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to ...
|
|
JP2014185111A |
To provide a high-purity 2,2-difluorobutane suitable as a gas for plasma reactions targeting semiconductors.A high-purity 2,2-difluorobutane suitable as a gas for plasma reactions can be acquired past a rectifying step of purifying a cru...
|
|
JP5571649B2 |
A chemical mechanical polishing composition and slurry comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition and slurry to polish tungsten containing sub...
|
|
JP5535851B2 |
The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a...
|
|
JP5514005B2 |
|
|
JP5472102B2 |
In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a l...
|
|
JP2014508371A |
The present invention relates to the production of a layer structure, comprising the following process steps: i) Providing a layer structure comprising a substrate and an electrically conductive layer on the substrate which comprises an ...
|
|
JP5431014B2 |
|
|
JP2014503607A |
Provided is a composition for etching polymeric materials comprising an aqueous solution including an alkali metal salt and glycine.
|
|
JP5406186B2 |
A pickling solution comprises a source of Mn(VII) ions; and an inorganic acid, where the pickling solution is free of chromium (VI) ions, alkali ions, and alkaline-earth ions. An independent claim is included for pickling acrylonitrile b...
|
|
JP5299648B2 |
A texture processing liquid for a transparent conductive film for realizing a high photoelectric conversion efficiency in a thin solar cell and a method for producing a transparent conductive film are provided. The surface of a transpare...
|
|
JP5292285B2 |
A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an alkaline material is disclosed.
|
|
JP2013535108A |
This invention provides a method of making a photovoltaic cell. The method uses an etching composition comprising one or more onium salts selected from the group consisting of iodonium salts and sulfonium and an organic medium to etch th...
|
|
JP2013534944A |
The present invention relates to a novel etching media in the form of printable, homogeneous etching pastes with non-Newtonian flow properties for the improved etching of inorganic oxides and silicon surfaces and which allow to prepare s...
|
|
JP5190063B2 |
The present invention relates to novel printable etching media having improved properties for use in the process for the production of solar cells. These are corresponding particle-containing compositions by means of which extremely fine...
|
|
JP5177426B2 |
The present invention provides a composition for the etching treatment of a resin molded article. The composition is composed of an aqueous solution containing 20 to 1,200 g/l of an inorganic acid, 0.01 to 10 g/l of a manganese salt, and...
|
|
JP5167569B2 |
A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.
|
|
JP5142592B2 |
As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process f...
|
|
JP5131873B2 |
|
|
JP2013000813A |
To provide a polishing liquid for forming a flat polished surface by exposing a magnetic part and a nonmagnetic part embedded in a recess of the magnetic part.The polishing liquid is used for polishing a complex 15 comprising a magnetic ...
|
|
JP5095161B2 |
To provide an aqueous solution and a method which are used for separation of a dark sintered ceramic material, and which can separate a glass pane from a glass pane having a dark sintered ceramic material attached thereon readily in a re...
|
|
JP5088352B2 |
|
|
JP5091400B2 |
An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weig...
|
|
JP5080180B2 |
|
|
JP5030403B2 |
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), p...
|
|
JP5020591B2 |
|
|
JP4998619B2 |
Disclosed is an agent for removing a conductive film, which contains: an acid having a boiling point of 80°C or higher, a base having a boiling point of 80°C or higher, or a compound which generates an acid or a base by external energy...
|
|
JP4959095B2 |
A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from a...
|
