| Document |
Document Title |
|
JP2005340649A |
To provide an etching liquid and an etching method contributing to the prevention of semiconductor wafer metal contamination, and to provide a semiconductor wafer with its metal contamination greatly reduced.For the preparation of the et...
|
|
JP2005536614A |
The present invention relates to novel etching media in the form of printable and dispensable etching pastes for the etching of titanium oxide surfaces of the general composition TixOy, and to the use of these etching pastes in a process...
|
|
JP2005328067A |
To provide an etching solution containing anionic surfactant for removing an oxide film, its manufacturing method, and a manufacturing method for a semiconductor device using the etching solution.The etchant is formed of HF, deionized wa...
|
|
JP2005533896A |
A composition and process for wet stripping removal of sacrificial anti-reflective silicate material, e.g., from a substrate or article having such material deposited thereon, particularly where the sacrificial anti-reflective material i...
|
|
JP2005532691A |
A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comp...
|
|
JP2005286335A |
To provide compositions and methods for chemical-mechanical planarization of tungsten and titanium having an improved selection ratio, in which the removal of the titanium layer is improved, while suppressing the removal of an insulating...
|
|
JP2005530045A |
Acid etching mixtures having water content, reduced by the addition of fluorosulfonic acid. The preparation and the use of said acid etching mixtures, particularly in etching silicon, are also disclosed.
|
|
JP2005268605A |
To provide a method which selectively perform low-temperature wet etching of an SiN film to an SiO film and Si.The etchant which etches an SiN film selectively contains hydrogen fluoride, ether based solvent and/or fluorination ether bas...
|
|
JP2005268665A |
To provide a polishing composition capable of reducing a surface roughness of a silicon wafer and accelerating a polishing speed.The polishing composition is used for polishing the silicon wafer and contains silicon dioxide, alkali compo...
|
|
JP2005232559A |
To provide a removing solution capable of removing a titanium thin film at high etching speed while inhibiting the corrosion of the other metals extremely low.The titanium removing solution is an aqueous solution of ≤pH 5 comprising a ...
|
|
JP2005236280A |
To provide a cleaning liquid composition for a semiconductor substrate capable of effectively removing polymers without damaging a metal and an oxide film, a cleaning method of the semiconductor substrate using the same and a manufacturi...
|
|
JP3686307B2 |
To obtain a CMP process which increases the removing speed of a liner for copper metallurgy composed of a metal having a high melting point, its alloy or compound, or both the metal and alloy or compound and, at the same time, can minimi...
|
|
JP2005220332A |
To provide an anti-slip treatment agent for preventing a slip on a surface of a mineral flooring material, and to provide an anti-slip treatment method for the flooring material, capable of improving a measure for preventing a person fro...
|
|
JP2005523378A |
The levels of iron sulfide present in a conduit, such as a pipeline, are reduced by contacting the conduit, on an inner surface, with a composition obtained from an aqueous solution containing at least one compound of Formula (I) and at ...
|
|
JP2005206903A |
To provide an etchant composition which is used for etching a metallic thin film and a metal oxide film, in a process of manufacturing electronic equipment such as a semiconductor device and a flat panel display device, has no problem wi...
|
|
JPWO2003081658A1 |
The present invention relates to an etching solution composition containing a perfluoroalkyl group-containing phosphoric acid compound, oxalic acid and water. By using the etching solution composition, a transparent electrode film made o...
|
|
JP3669864B2 |
To easily execute cleaning without damaging an Si3N4 film forming device, piping or the like by reactionally removing Si or an Si series compd.- contg. NH4Cl deposited on the inside of an exhaust system piping with ClF3. Preferably, when...
|
|
JP2005520273A |
A process for providing a metal-seeded liquid crystal polymer comprising the steps of providing a liquid crystal polymer substrate to be treated by applying an aqueous solution comprising an alkali metal hydroxide and a solubilizer as an...
|
|
JP3667893B2 |
To form a firm polymerized film on an etching surface and to realize high selectivity with respect to a resist and a base and the high plasma resistance of the resist and the base by a method, wherein a compound containing a specified ac...
|
|
JP2005162738A |
To provide a method in which high purity 1,1-difluoroethane, which can be used as a cooling medium or an etching gas, can be produced industrially advantageously.Crude 1,1-difluoroethane contains at least one compound selected from the g...
|
|
JP3663754B2 |
To provide a method for evaluating dislocation density of compound semiconductor by which a III-V nitride compound semiconductor can be evaluated highly efficiently by providing an etchant which makes the measurement of the density of et...
|
|
JP3659597B2 |
PURPOSE: To make it, possible to etch a tin oxide film with good accuracy by executing AC electrolysis or DC cathodic electrolytic etching using an acid soln., alkaline soln., alkaline metal soln. or ammonium salt soln. as an etching liq...
|
|
JP3649279B2 |
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a subs...
|
|
JP2005118982A |
To provide a polishing fluid which can set the surface roughness of a magnetic disk to less than 2 .The particle-free polishing fluid contains at least one oxidizing agent or a mixture thereof. The particle-free polishing fluid may conta...
|
|
JP2005116542A |
To provide an etchant composition that is low in foaming property and does not generate any etching residue.This etchant composition contains phosphoric ester salt containing a perfluoroalkyl group, an oxalic acid, and water.
|
|
JP2005097715A |
To selectively etch a titanium-containing layer which is formed on a silicon substrate or a silicate glass substrate and mainly contains one or more substances selected from the group consisting of titanium, titanium oxides, titanium nit...
|
|
JP3630168B2 |
PCT No. PCT/GB93/01003 Sec. 371 Date Dec. 19, 1994 Sec. 102(e) Date Dec. 19, 1994 PCT Filed May 17, 1993 PCT Pub. No. WO93/23493 PCT Pub. Date Nov. 25, 1993.An aqueous composition for etching and cleaning semiconductor devices comprises ...
|
|
JP2005064285A |
To provide a CPM polishing solution with which the polished surface of high flatness is obtained even when the polished surface consists of a plurality of substances, and the generation of metallic residuals and polishing flaws after pol...
|
|
JP2005507166A |
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. met...
|
|
JP2005063532A |
To provide a polishing liquid composition for reducing contamination of a substrate, having high polishing speed and for reducing waviness, to provide a polishing method by which waviness of a substrate to be polished is reduced using th...
|
|
JP3627598B2 |
|
|
JP2005057304A |
To provide a semiconductor element which suppresses the occurrence of particles during manufacturing and improves alignment capability.The semiconductor element is composed of a cell part, which includes a conductor plug 235 or the like ...
|
|
JP2005051236A |
To provide a mixed gas that enables a high etching rate and a high etching selectivity through the mask, during etching of dielectric materials in a multilayered substrate.Etching is performed by using a mixed gas which comprises a fluor...
|
|
JPWO2003038883A1 |
The present invention relates to a polishing liquid and a polishing method used for polishing in a wiring forming process of a semiconductor device or the like. Provided is a polishing liquid capable of obtaining a highly flat surface to...
|
|
JP2005039277A |
To provide a dielectric material relating to the photoresist mask which can simultaneously exhibit higher etching selectivity and speed.A mixture for etching dielectric material from lamination substrate and a material including the mixt...
|
|
JP2005034842A |
To provide a surface treating method by which residues can be removed surely only by treating with a supercritical fluid.This surface treating method comprises a step to treat a structure-formed surface with the supercritical fluid 4 con...
|
|
JP2005502196A |
A process for providing a metal-seeded liquid crystal polymer comprising the steps of providing a liquid crystal polymer substrate to be treated by applying an aqueous solution comprising an alkali metal hydroxide and a solubilizer as an...
|
|
JP2005019519A |
To provide a polishing composion of which polishing rate of a tantalum compound is sufficiently larger than that of copper, and polishing of SiO2 does not substantially occur in a CMP (chemical mechanical polishing) process of polishing ...
|
|
JP3611723B2 |
|
|
JP3611722B2 |
|
|
JP3611729B2 |
|
|
JP2005005501A |
To provide a CMP abrasive wherein cerium oxide particles are well dispersed, a polishing method by which a substrate having an unevenness is polished to obtain global planarity, and a method of manufacturing a semiconductor device by whi...
|
|
JP3606604B2 |
A chromium and ferricyanide free aqueous deoxidizer/desmutter for aluminum and magnesium alloys contains nitric acid, ferric ions, persulfate, and molybdate and preferably also sulfate, fluoride, and ethoxylated acetylenic diol surfactant.
|
|
JP2004363227A |
To provide an aqueous composition for chemical mechanical polishing, especially, a composition for CMP for forming a damascene interconnect line principally comprising such a metal as Al, Cu or W and being mounted on a DRAM or a high spe...
|
|
JP2004536448A |
Methods of using reactive gases containing a perfluoroketone having 4 to 7 carbon atoms for removing unwanted deposits that build up in a vapor reactor, for etching dielectric and metallic materials in a vapor reactor, and for doping a m...
|
|
JP3592894B2 |
A chemical mechanical polishing slurry having a pH in the range 1.5 to 3.0 comprising an oxidizing agent such as ferric nitrate, a fluoride containing additive such as hydrofluoric acid in an amount ranging from 0.01 to 0.3 weight percen...
|
|
JP2004327952A |
To provide a polishing composition which allows the polishing speed for silicon carbide members to increase.This polishing composition includes a polishing agent made of chromium oxide, an oxidizer, at least one additive selected from a ...
|
|
JP3586507B2 |
|
|
JP2004533511A |
The present invention provides for the use of bis(perfluoroalkanesulfonyl)imide and its salts as surfactants or additives applications having an extreme environment.
|
|
JP3575859B2 |
PURPOSE: To flatten the surface of a semiconductor substrate so that the possibility of contamination of the surface of the substrate with a metallic impurity can be eliminated and particles can be removed from the surface of the substra...
|
