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WO/2022/102621A1 |
Provided is an elastic wave device that allows excellent resonance characteristics to be obtained. An elastic wave device according to the present invention is connected between first and second signal terminals 12A, 12B of a filter ap...
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WO/2022/102720A1 |
The present invention suppresses crack generation in a piezoelectric layer. This elastic wave device comprises: a support substrate having thickness in a first direction; a piezoelectric layer provided on the support substrate in the fir...
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WO/2022/102197A1 |
The present invention lowers the profile of a high frequency module. A high frequency module (100) is provided with a mounting substrate (9), a filter (1), and an electrically conductive member (3). The mounting substrate (9) has a first...
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WO/2022/101014A1 |
Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators configured to systematically modify phase characteristics of an antenna reflection coefficient. One example is a wireless communicatio...
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WO/2022/102284A1 |
This high-frequency module (1) comprises: a module substrate (91); a first component positioned on a main surface (91a) of the module substrate (91); a metal shield wall (81) that is positioned on an upper surface (61a) of the first comp...
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WO/2022/096623A1 |
The invention relates to a SAW device (1) comprising a substrate (2) and at least one piezoelectric layer (3), arranged on the substrate, and at least one transducer (4), arranged on the piezoelectric layer (3), wherein the substrate (2)...
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WO/2022/096774A1 |
A MEMS (microelectromechanical system) resonator (100) comprising a material layer (L5) of single-crystalline silicon, at least one layer (L2, L4) made of material with low thermal diffusivity to reduce thermoelastic dissipations in the ...
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WO/2022/097328A1 |
Provided are a resonance device and a resonance device manufacturing method that make it possible to suppress junction defects at a junction. The resonance device 1 comprises: a MEMS substrate 50 that includes a resonator 10; a top cov...
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WO/2022/098660A1 |
A modular filter system includes a wideband combiner, which includes an antenna connector and wideband filter connectors, and multiple filter modules. A first filter module includes a first connector configured to pass a first frequency ...
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WO/2022/094743A1 |
A resonator, a filter (1010), and an electronic device (100), which relate to the technical field of harmonic suppression and can reduce spurious modes of the resonator between a resonant point and an anti-resonant point. The resonator c...
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WO/2022/095196A1 |
An acoustic wave device and a filter, comprising a substrate (4), a lower electrode layer (3), a piezoelectric layer (2), and an upper electrode layer (1) which are sequentially stacked from bottom to top. An air cavity (5) is distribute...
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WO/2022/088993A1 |
Provided are a semiconductor device and a forming method therefor. A first light resistance layer with a vertical or near-vertical side wall is used to precisely control a formed sacrificial part, thereby being conducive to precisely con...
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WO/2022/094206A1 |
Assemblies including a bulk acoustic wave acoustic sensor die having a first and an opposing second major surface, the die including a piezoelectric structure, a first and a second electrode electrically connected to the piezoelectric st...
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WO/2022/089816A1 |
Certain aspects of the present disclosure can be implemented in an electroacoustic device. The electroacoustic device generally includes: a substrate; a bottom electrode layer disposed above the substrate; an acoustic mirror stack having...
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WO/2022/092308A1 |
The purpose of the present invention is to suppress deterioration of characteristics of a second filter due to the influence of heat generated in a first filter during simultaneous transmission using both the first filter and the second ...
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WO/2022/091954A1 |
The present invention increases the element value of a circuit element included in an electronic component. In a high-frequency module (100), a conductive layer (6) covers a major surface (51) of a resin layer (5) on a side opposite the ...
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WO/2022/089545A1 |
Disclosed in the present invention are an acoustic wave filter, a multiplexer, and a communication device. A plurality of series resonators and a plurality of parallel resonators are provided between the input end and the output end of t...
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WO/2022/089597A1 |
Disclosed are a filter comprising a doped resonator, and a multiplexer and a communication device, wherein the doped resonator and a non-doped resonator are allocated to different positions in a filter topology, thereby saving the cost, ...
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WO/2022/091582A1 |
This elastic wave filter (1) comprises a radar circuit (11) having a series arm resonator (11s) and a parallel arm resonator (11p), a radar circuit (12) having a series arm resonator (12s) and a parallel arm resonator (12p), and a radar ...
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WO/2022/091726A1 |
This multiplexer (10) comprises filters (11 and 12) connected to an antenna connection terminal (100). The filter (11) comprises a first serial arm resonator and a first parallel arm resonator. Each of the first serial arm resonator and ...
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WO/2022/089841A1 |
In certain aspects, a chip includes an acoustic resonator (150A, 150B), and a mirror (130A, 130B) under the acoustic resonator. The mirror includes a first plurality of porous silicon layers (132A-1,132A-2,...), and a second plurality of...
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WO/2022/087843A1 |
Provided are a resonator (100) and a manufacturing method therefor, a filter, and an electronic device, relating to the field of resonators, and being capable of suppressing spurs on an admittance curve of a resonator. The resonator (100...
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WO/2022/087825A1 |
Provided are a resonator and a manufacturing method therefor, a filter, and an electronic device, relating to the field of resonators, and being capable of suppressing spurious harmonics of a resonator. The resonator comprises: a piezoel...
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WO/2022/092315A1 |
Provided is a filter device capable of widening a pass band while improving power resistance. The filter device comprises: a first filter that includes a first input terminal, a first output terminal, first series arms in which a plurali...
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WO/2022/083712A1 |
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer and a top electrode, wherein the piezoelectric layer comprises a first layer and a second...
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WO/2022/087445A1 |
An acoustic wave device includes a piezoelectric layer including lithium niobate or lithium tantalate, and a series arm resonator and a parallel arm resonator each including at least a pair of a first electrode and a second electrode on ...
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WO/2022/085581A1 |
Provided is an acoustic wave device with which it is possible to suppress the occurrence of cracks in a dielectric film, and to suppress sticking of a piezoelectric layer to the dielectric film. An acoustic wave device 10 is provided w...
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WO/2022/085565A1 |
Provided is an elastic wave device which can suppress warping of a piezoelectric layer, even in a case where the piezoelectric layer has anisotropy in the linear expansion coefficients thereof. An elastic wave device 1 comprises: a sup...
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WO/2022/083352A1 |
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic lens, a bottom electrode, a piezoelectric layer, and a top electrode, wherein the resonator further comprises an acoustic resistance layer ...
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WO/2022/085624A1 |
Provided is an elastic wave device capable of suppressing higher order modes in a wide band. An elastic wave device 1 according to the present invention comprises: a support substrate 2; a crystal layer 4 (SiO2 layer having crystallini...
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WO/2022/083717A1 |
A layered temperature-compensated surface acoustic wave resonator and a packaging method therefor. The layered temperature-compensated surface acoustic wave resonator comprises a substrate layer (101), a temperature compensation layer (1...
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WO/2022/085314A1 |
A multiplexer (10) comprises: a filter (11) which includes a first pass band that includes a first band which can be used for transmission; a filter (12) which includes a second pass band that includes a second band which can be used for...
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WO/2022/080426A1 |
The present invention comprises a crystal piece having a main surface defined by a first base axis and a second base axis that intersects with the first base axis, and an excitation electrode part provided to the main surface of the crys...
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WO/2022/077707A1 |
A thin-film bulk acoustic resonator (100) comprising: a substrate (110); an acoustic reflector structure (120) either disposed in an upper surface of the substrate (110) or disposed above the substrate (110); and a piezoelectric vibratio...
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WO/2022/080462A1 |
Provided is an acoustic wave device for improving moisture resistance of an electrode part. The acoustic wave device comprises: a piezoelectric layer having a first main surface and a second main surface facing in opposite directions to ...
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WO/2022/079024A1 |
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device and methods for fabricating such a SAW device. One example SAW device generally includes a piezoelectric substrate, an interdigital transducer (IDT) d...
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WO/2022/081360A1 |
An acoustic-wave device includes a first electrode (141) located over a substrate (110). A piezoelectric film (150) is located over the first electrode (141) and at least partially overlaps the first electrode (141). A second electrode (...
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WO/2022/080433A1 |
An elastic wave device comprising a mounting substrate having wiring, an elastic wave element mounted on the mounting substrate, and a cover member covering the elastic wave element, wherein: the elastic wave element comprises a piezoele...
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WO/2022/080406A1 |
Provided is an acoustic wave device with which ripples are not liable to occur. An acoustic wave device 1 includes a support substrate 2, a through hole 2b serving as an energy confining portion, and first and second resonators 11, 12,...
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WO/2022/075138A1 |
Provided is an elastic wave device by which it is possible to suppress higher order modes in a wide bandwidth. This elastic wave device 1 comprises: a silicon substrate 2; a polycrystalline silicon layer 3 disposed on the silicon subst...
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WO/2022/075311A1 |
This elastic wave device (100) comprises a support substrate (110), a piezoelectric layer (121) positioned on the support substrate (110), and a functional element (130) positioned on the piezoelectric layer (121). The support substrate ...
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WO/2022/073230A1 |
Provided is a substrate stripping method for a semiconductor structure. The method comprises: providing a substrate (10), a first AlN layer (11), a first AlGaN layer (12) and a functional layer (13), which are distributed from bottom to ...
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WO/2022/075415A1 |
An elastic wave device equipped with: a first piezoelectric layer and a second piezoelectric layer which each comprise lithium niobate or lithium tantalate and have a first main surface and a second main surface opposite the first main s...
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WO/2022/075070A1 |
The present invention provides a longitudinally coupled resonator-type elastic wave filter in which degradation of attenuation characteristics does not readily occur. In this longitudinally coupled resonator-type elastic wave filter 1:...
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WO/2022/069545A1 |
The invention relates to a resonator device for measuring stress comprising at least two resonators, each resonator comprising an inter-digitated transducer structure arranged between two reflecting structures on or in a piezoelectric su...
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WO/2022/069329A1 |
Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) reson...
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WO/2022/069573A2 |
The invention relates to a surface acoustic wave (SAW) device comprising an interdigitated transducer structure (102, 252) and at least one acoustic wave reflective structure (104, 106, 254, 256) provided on or in an acoustic wave propag...
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WO/2022/070885A1 |
Provided is a vertically coupled resonator-type elastic wave filter capable of increasing an amount of attenuation on the high-band side of the pass band without causing an increase in size. A vertically coupled resonator-type elastic ...
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WO/2022/068766A1 |
A duplexer design method, a duplexer, a multiplexer, and a communication device. In the method, the thicknesses of lifting portions on a parallel resonator in a common matching unit in a high-frequency filter and a parallel resonator in ...
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WO/2022/068552A1 |
The present disclosure relates to a bulk acoustic resonator, comprising a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer, and a top electrode wherein the piezoelectric layer is a piezoelectric layer comprising a...
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