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WO/2024/122793A1 |
The present invention relates to a thin material continuous thickness measurement device for measuring deviations in the thickness of a thin material such as a thin film or a thin sheet. The thin material continuous thickness measurement...
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WO/2024/122184A1 |
Provided is a sputtering target with which is obtained a uniform thin film composed mainly of Cr. This sputtering target is configured from a Cr group alloy. The Cr group alloy contains 10.0-30.0 at% of B. The metal composition of the ta...
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WO/2024/120628A1 |
A method of processing a substrate. The substrate is a glass substrate for display manufacturing. The method includes chucking the substrate to a monopolar electrostatic chuck by providing a voltage to an electrode of the electrostatic c...
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WO/2024/119580A1 |
A polymer base film surface treatment method and device, and a coated product (30). The treatment method comprises: arranging a base film surface modification device at a discharge end before a polymer base film (31) is coated, so that a...
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WO/2024/119460A1 |
An aluminum-plastic composite film and a preparation method therefor. The aluminum-plastic composite film comprises a nylon protective layer, a composite aluminum foil layer, and a CPP heat sealing layer; the composite aluminum foil laye...
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WO/2024/123879A1 |
An anode for a plasma chamber, having an anode block having a front surface to face a plasma and a rear surface to face away from the plasma; a magnet positioned within the anode block and generating magnetic field lines extending outwar...
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WO/2024/122464A1 |
Provided are a glass article that has an excellent appearance and a production method for the glass article that suppress whitening after hot forming. This glass article has a functional layer (3) and a silicon oxide–containing layer (...
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WO/2024/117584A1 |
The present invention provides a deposition source system in which the deposition rate of each of a plurality of deposition sources can be adjusted in real time using a plurality of measurement sensors and the plurality of deposition sou...
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WO/2024/117614A1 |
A coating method for semiconductor equipment according to the present invention comprises the steps of: (a) preparing metal powder having the same composition as a base material as a coating material; and (b) melting the coating material...
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WO/2024/117800A1 |
The present invention provides a polyimide film and a method for producing same, the polyimide film having a moisture absorption rate of 0.9% or less and an elongation of 20-50%.
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WO/2024/117184A1 |
Disclosed is a molybdenum sputtering target that has a metal impurity content of 100 mass ppm or less, a tungsten content of 50 mass ppm or less, and an oxygen concentration of 50 mass ppm or less.
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WO/2024/117545A1 |
Disclosed are: a multi-stage contact tip manufacturing method capable of improving design freedom for a contact tip, which is formed on a probe sheet of a probe card for inspecting a semiconductor device and contacts a pad of the semicon...
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WO/2024/116599A1 |
This film forming device comprises: a first vapor deposition means for releasing a vapor deposition material onto a substrate; a movement means for, during release of the vapor deposition material onto the substrate, causing the first va...
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WO/2024/116668A1 |
Provided is an evaporation source unit that performs film forming on a substrate moving relatively in a movement direction, said unit being characterized by including: a plurality of evaporation sources that each independently include a ...
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WO/2024/113747A1 |
The present application relates to a mask device, comprising: a first mask provided with a plurality of deposition areas and separation areas located among the plurality of deposition areas, deposition openings being formed in the deposi...
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WO/2024/115196A1 |
The present invention relates to a coated cutting tool for metal machining comprising a rake face and a flank face and a cutting edge in between, the coated cutting tool further comprises a substrate body and a coating thereon, wherein t...
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WO/2024/113432A1 |
The present invention relates to the technical field of current collectors. Disclosed in the present invention are a high-strength polyester base film, and a preparation method therefor and the use thereof in a composite current collecto...
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WO/2024/116598A1 |
A film forming apparatus according to the present invention comprises: a first vapor deposition means that discharges a first vapor deposition material onto a substrate; a movement means that moves the first vapor deposition means along ...
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WO/2024/113474A1 |
The present application discloses a hydrogen-sensitive color-changing material and a use thereof. The hydrogen-sensitive color-changing material is a structural color material and comprises at least one substrate layer, at least one colo...
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WO/2024/116131A1 |
A thin film of gold includes a plurality of gold atoms. The thin film is defined by a thickness that corresponds to one layer or a plurality of discrete layers of the gold atoms. The thin film exhibits non-conducting and semiconductor be...
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WO/2024/115535A1 |
The invention concerns technical systems and relates to a coating for a steel strip (1), a coated steel strip (1), a method for producing the coating and an air-handling system having the coating. According to the invention, the coating ...
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WO/2024/113456A1 |
Provided in the present disclosure are a silylene composite film, a preparation method therefor, an electrode, and a lithium ion battery. The preparation method for the silylene composite film comprises the following steps: providing a c...
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WO/2024/116600A1 |
This film forming apparatus comprises: a first vapor deposition means for emitting a first vapor deposition material onto a substrate; a rotating means, which has a rotation base on which the first vapor deposition means is mounted, for ...
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WO/2024/118468A1 |
A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a mult...
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WO/2024/116669A1 |
Provided is an evaporation source unit that forms a film on a substrate that moves relative to a movement direction, and is characterized by comprising: a first evaporation source group that includes a plurality of first evaporation sour...
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WO/2024/110041A1 |
The invention relates to a method of using a thermal laser evaporation (TLE) system (10), the TLE system (10) comprising a reaction chamber (12) fillable with a reaction atmosphere (14), a substrate (16) arranged in the reaction chamber ...
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WO/2024/111779A1 |
An apparatus for controlling the deposition of an organic-inorganic halide perovskite thin film according to an embodiment of the present disclosure comprises: a substrate for the deposition of organic-inorganic halide perovskite; a vacu...
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WO/2024/108715A1 |
An improved high-strength polyester thin film and an acrylic resin joint adhesive. A preparation method comprises the following specific steps: S1, sequentially adding 80% of a solvent, 1/4 of mixed monomers and 2/6 of an initiator to a ...
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WO/2024/110040A1 |
The invention relates to a method of using a thermal laser evaporation (TLE) system (10), the TLE system (10) comprising a reaction chamber (12) fillable with a reaction atmosphere (14), a substrate (16) arranged in the reaction chamber ...
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WO/2024/103085A1 |
The invention relates to an apparatus for depositing sublimated matrix (1) to a substrate (2) comprised of a sublimation chamber (3) with a pressure adjustment unit (4) adapted to adjust the gas pressure (pv) inside the sublimation chamb...
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WO/2024/107091A1 |
The present invention concerns a method for producing a muzzle brake for a barrel, characterized in that the method includes the steps: i.) a muzzle brake (1) comprising at least one brake disc (3, 5) is assembled, ii.) a surface treatme...
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WO/2024/107257A1 |
A physical vapor deposition (PVD) chamber deposits thin films on substrates having through-vias (TVs) formed therethrough in an electronic device fabrication process. More particularly, apparatus and methods improve film deposition unifo...
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WO/2024/106163A1 |
The present invention enables the achievement of a production method which is capable of uniformly applying an active material to a film collector foil by roll conveyance without the occurrence of wrinkles or folds caused by heating or d...
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WO/2024/107259A1 |
A physical vapor deposition (PVD) chamber deposits thin films on substrates having through-vias (TVs) formed therethrough in an electronic device fabrication process. More particularly, apparatus and methods improve film deposition unifo...
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WO/2024/103777A1 |
Disclosed in the present invention is a preparation method for an amorphous thin film with good electrical transport performance. The preparation method comprises the following steps: (1) mixing lanthanum oxide and titanium oxide precurs...
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WO/2024/103780A1 |
Disclosed in the present invention is a preparation method for a self-standing perovskite oxide thin film. The preparation method comprises the following steps: performing sintering to obtain an SrCoO2.5 target material and a BiFeO3 targ...
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WO/2024/105993A1 |
This film forming apparatus comprises a vapor deposition means for releasing a vapor deposition substance via a mask onto a substrate supported by a supporting means inside a chamber to form a film on the substrate, the film forming appa...
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WO/2024/101196A1 |
The present invention provides a metalized film that has contact resistance lower than surface resistance even when a conductive thin film layer is formed on a resin surface, has excellent post-processing suitability, such as the transpo...
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WO/2024/100886A1 |
Provided is a thin film that contains oxygen and silicon capable of increasing adhesiveness of a fluorine-containing compound to the thin film in a short period of time. This oxygen-and-silicon-containing thin film contains silicon, oxyg...
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WO/2024/102511A1 |
A cathodic arc coating system includes alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium ni...
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WO/2024/102506A2 |
Described herein is a method for depositing a two-dimensional material film on a substrate. In some embodiments, the method comprises using a reactor with two regions to decompose the first precursor. In some embodiments, the method comp...
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WO/2024/102247A1 |
A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a subs...
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WO/2024/101167A1 |
This film forming apparatus comprises: a film forming unit that includes a film forming source for releasing a film forming material and that forms a film on a substrate while moving in a moving direction, if positioned within a film for...
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WO/2024/098845A1 |
A mask assembly, an evaporation method, and an evaporation device. The mask assembly comprises: a plurality of rows of mask sheets (21) and x mask frames, wherein the plurality of rows of mask sheets (21) correspond to evaporation patter...
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WO/2024/099027A1 |
The present invention belongs to the technical field of surface treatments, and disclosed are a high-temperature super-lubrication silicon-doped diamond-like carbon film, and a preparation method therefor and the use thereof. The high-te...
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WO/2024/099794A1 |
The present invention concerns a process for depositing group IIIA metal nitride layers with preferred (002) orientation comprising: a. providing a substrate b. depositing by magnetron sputtering a seed layer comprising ZnO on the substr...
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WO/2024/101102A1 |
The present invention provides a member (6) having an yttrium-based protective film (4). The member (6) has a substrate (5), at least one stress relief layer (8, 9), and the yttrium-based protective film (4) in this order, wherein the yt...
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WO/2024/101670A1 |
The present invention relates to a deposition system. The deposition system having a plurality of evaporation sources, according to an embodiment of the present invention, comprises: a substrate; and a plurality of point evaporation sour...
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WO/2024/101367A1 |
The present invention relates to an yttrium-based protective film which has a Y5O4F7 peak intensity ratio of 60% or more in the X-ray diffraction pattern, a porosity of less than 1.5% by volume, and a Vickers hardness of 800 HV or more. ...
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WO/2024/100856A1 |
This method for manufacturing a vapor deposition mask includes a patterning step for patterning a mask substrate so that a plurality of pattern regions are formed on the mask substrate, a joining step for joining the mask substrate and t...
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