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WO/2023/161511A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161501A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161521A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/160329A1 |
A display panel, a display apparatus, and a mask. The display panel comprises a substrate, and a plurality of island regions spaced from each other, hole regions provided between adjacent island regions, and bridge regions connecting adj...
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WO/2023/163167A1 |
Provided are a single crystal thin film of a compound having a flat rock salt-type structure, and a production method therefor. A single crystal thin film according to the present invention comprises a single crystal thin film of a compo...
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WO/2023/162503A1 |
A surface treatment device (1) comprises: a treatment electrode such as a plasma electrode (50) or a sputter electrode (80); a barrel (100) (accommodation unit) that is installed in a position facing the treatment electrode and is rotata...
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WO/2023/163078A1 |
[Problem] Since a high-temperature process is required when adding impurities to a single crystal semiconductor film by means of ion implantation or by means of thermal diffusion, it has been difficult to form a steep impurity profile. [...
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WO/2023/160741A1 |
The invention relates to a method and a device for coating powder- or granular-form particles by means of gas flow sputtering with a hollow cathode functioning as the target and arranged in an evacuable container together with an anode a...
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WO/2023/159784A1 |
The present invention relates to a flexible substrate coating device and coating method. The flexible substrate coating device comprises a vacuum chamber, a partition plate, an unwinding roller, a heating member, a coating roller, a plat...
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WO/2023/161510A1 |
High-power- (HP-) generator (10) configured to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161503A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/161518A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/162327A1 |
Provided are a Cu-Al binary alloy sputtering target having a high Al content and a method for producing the same, which make it possible to suppress cracking of a sputtering target. The present invention provides a sputtering target comp...
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WO/2023/162685A1 |
A coated tool according to the present disclosure includes a substrate and a coating layer located on the surface of the substrate. The coating layer includes: at least one element selected from among elements in groups 4a, 5a, and 6a of...
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WO/2023/162683A1 |
A coated tool according to the present disclosure has a substrate conaining a hard phase and a joining phase, and has a coating layer. The coating layer includes an adhesive layer and a wear-resistant layer. The adhesive layer contains T...
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WO/2023/161517A1 |
High-power- (HP-) generator (10) and a method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators ...
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WO/2023/161892A1 |
The present invention relates to an electrocatalyst comprising a Cu substrate coated with a 3D TiO2/Cu microrods array decorated with nanoparticles of a noble metal, preferably Ru nanoparticles, an electrochemical cell comprising said el...
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WO/2023/160809A1 |
44019242 29475P-WO 23 ABSTRACT A deposition apparatus (110) for processing a substrate supported on a substrate support is provided. The deposition apparatus includes a vacuum chamber (112) having a lid assembly (114), one or more pump p...
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WO/2023/162849A1 |
The present invention provides a sputtering target which is configured from an oxide sintered body that contains an oxide of the formula below containing indium, magnesium and tin. In the formula, X is 0.32 to 0.65; Y is 0.17 to 0.46; Z ...
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WO/2023/161502A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/160730A1 |
The present invention discloses a method for manufacturing an insulated gold bonding wire for the double-layer superposed packaging of an integrated circuit, and relates to the technical field of gold bonding wires for microelectronic pa...
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WO/2023/161522A1 |
High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising: - several low-power- (LP-) generators (1...
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WO/2023/160836A1 |
According to one embodiment, a substrate support assembly for supporting a substrate is provided. The substrate support assembly, includes a table body having a surface configured to face the substrate; a table frame coupled to the table...
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WO/2023/156117A1 |
A vacuum layer deposition apparatus comprising a vacuum coating chamber with an inner space; a material source constructed to generate electrically positively charged particles of a material to be deposited on a substrate in said inner s...
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WO/2023/158555A1 |
An apparatus for processing a semiconductor substrate, such as an optical device, is described herein. The apparatus includes a substrate carrier which is configured to enable a processing chamber configured to process larger substrates ...
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WO/2023/157466A1 |
The present invention addresses the problem of providing a hard coating having enhanced wear resistance, heat resistance, low friction and high sliding properties, welding resistance, and adhesion. The hard coating has: a bottom layer ...
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WO/2023/155613A1 |
Disclosed in the present application are a pulsed laser deposition device and method. A laser scanning sputtering component in the device comprises: a base; an adjustment device, which is located on the base; a plurality of second suppor...
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WO/2023/158194A1 |
A mask comprises: a body which has a length extended in a first direction, and in which a plurality of first cell regions arranged in the first direction, each including a plurality of first holes, and a plurality of second cell regions ...
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WO/2023/157849A1 |
The present invention relates to an yttrium-based protective film which has a Y5O4F7 peak intensity ratio of 60% or more in an X-ray diffraction pattern, a porosity of less than 1.5% by volume, and a Vickers hardness of 500 MPa or more.
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WO/2023/152886A1 |
The present disclosure provides a method for forming a phosphor film capable of emitting light in various wavelength ranges by employing a sputtering method. The method for forming a phosphor film according to the present disclosure comp...
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WO/2023/153099A1 |
The present invention provides a steel sheet for hot pressing, the steel sheet being prevented from the generation of scales due to a coating layer and being reduced in adhesion of a metal to heating facilities, thereby preventing liquid...
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WO/2023/152305A1 |
The invention relates to a method for producing perforated metal strips having a metallic coating, wherein metal strips and in particular steel sheet strips with a perforation or a hole pattern are fed to a coating device and are passed ...
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WO/2023/154631A1 |
The invention relates to a method for manufacturing a doped wurtzite aluminum nitride piezoelectric thin film material, which method comprises the steps of: providing a deposition device, such as a pulsed lased deposition device or a phy...
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WO/2023/154553A1 |
Embodiments described herein relate to a method of fabricating a perovskite film device. The method includes heating and degassing a substrate within a processing system; depositing a first perovskite film layer over a surface of the sub...
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WO/2023/153672A1 |
Provided is a vacuum evaporation source module comprising a shutter module in which functions of a shutter and an angle limit plate are integrated. The vacuum evaporation source module comprises: a housing; a plurality of first evaporati...
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WO/2023/152250A1 |
The invention relates to a bakeware, cookware and/or grillware item comprising a base, a heating side (14) arranged at a first side of the base (B), and a cooking side (12) arranged at a second side of the base (B), with the cooking side...
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WO/2023/153264A1 |
This Co-Cr-Pt-B ferromagnetic body sputtering target is characterized by comprising: a Co-Cr-Pt-B alloy phase (A) that includes B in the amount of more than 0 at% but not more than 30 at%, where B aggregate phase is not eccentrically loc...
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WO/2023/151812A1 |
A calibration assembly for a lithium deposition process is described. The calibration assembly includes a carrier, and a piezoelectric resonator coupled to the carrier. The calibration assembly is configured for being processed in the li...
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WO/2023/150882A1 |
Herein are described processes for and machines adapted for the production of lithium coated conductive substrates having conductive substrate planar surfaces. The process can include providing a lithium coated conductive substrate and t...
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WO/2023/149321A1 |
Provided is a sputtering device which can increase plasma density near a target. A sputtering device (1) comprises: a target (Tr) which is disposed inside a vacuum container (2) and has a facing surface (Tr1) that faces an article to be ...
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WO/2023/149320A1 |
Provided is a sputtering device capable of increasing plasma density in the vicinity of the target. The sputtering device (1) comprises: a target (Tr) disposed inside a vacuum vessel (2) so as to face an object being treated (H1) that is...
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WO/2023/149339A1 |
Provided are: a surface treatment agent that exhibits superior long-term storage stability and is capable of forming a surface layer exhibiting superior light-resistance properties; an article that has a surface layer; and a production m...
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WO/2023/149340A1 |
Provided are: a surface treatment agent that exhibits superior long-term storage stability and is capable of forming a surface layer exhibiting superior acid resistance; an article that has a surface layer; and a production method for an...
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WO/2023/149007A1 |
An electroconductive film for a circuit substrate, comprising a base material and a laminate provided to at least one surface of the base material. The laminate has a thin-film copper layer and an anti-corrosion layer in the stated order...
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WO/2023/144223A1 |
The invention relates to a transparent substrate provided on one of its main surfaces with a stack of thin layers, said stack of layers consisting of the following layers starting from the substrate: - a first dielectric module of one or...
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WO/2023/146232A1 |
Provided is a lateral type vacuum evaporation source comprising a rear heater disposed at a rear surface of a crucible in order to uniformly apply a temperature to an evaporation material inside the crucible. The lateral type vacuum evap...
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WO/2023/145950A1 |
The deposition mask according to the present disclosure comprises: a mask substrate containing silicon; a mask layer having a first surface and a second surface that is located on the opposite side from the first surface and that faces t...
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WO/2023/145497A1 |
The present invention provides a field effect transistor which comprises a base material that has a glass transition temperature of 250°C or less and an oxide semiconductor layer that is provided on the base material. The oxide semicond...
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WO/2023/144221A1 |
The invention relates to a transparent substrate provided on one of its main surfaces with a stack of thin layers, said stack of layers consisting of the following layers starting from the substrate: - a first dielectric module of one or...
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WO/2023/143952A1 |
The invention concerns a physical vapor deposition machine for depositing a coating onto at least one article, comprising: - an article support member disposed within a chamber and configured to receive a plurality of articles disposed t...
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