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JP2018032568A |
To generate high-density plasma while suppressing a required quantity of a plasma-generation gas without shortening the life of an electron-emitting member.A hollow cathode 100 comprises an electron-emitting member 10 arranged to emit el...
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JP6286059B2 |
Since a diffraction phenomenon occurs in the electron beam passing through a differential evacuation hole, an electron beam whose probe diameter is narrowed cannot pass through a hole having an aspect ratio of a predetermined value or mo...
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JP6282180B2 |
To provide technology for controlling extraction modes of ions extracted from a plasma chamber.In a microwave ion source 10, a plasma chamber 11 includes an inlet end 13 where a microwave introduction window 16 is provided, an outlet end...
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JP6283259B2 |
To provide a microwave ion source that is configured to be capable of forming a magnetic field distribution for generating plasma from which a heavy-current ion beam can be extracted, and easily adjusting the magnetic field distribution ...
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JP2018022701A |
To provide an ion gun of a Penning discharge system, capable of obtaining a high milling speed, an ion milling device having the same, and an ion milling method.An ion gun 1 includes: a cathode 12; an anode 13 provided at the inside of t...
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JP6272177B2 |
A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam t...
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JP6268680B2 |
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JP6266458B2 |
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to...
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JP2018501626A |
The present invention relates to a device for extracting charge carriers from a carrier generation space, comprising at least one electrode assembly 1a for extracting the carrier, wherein the at least one electrode assembly has a matchin...
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JP6258384B2 |
A dopant gas composition comprising a dopant gas including boron trifluoride or diborane, a diluent gas comprising hydrogen, and optionally a co-species gas, wherein at least one of the dopant gas and the optional co-species gas, when th...
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JP6258801B2 |
The present disclosure relates to a charged particle beam system and a method of operating a charged particle beam system. The charged particle beam system comprises a noble gas field ion beam source, a charged particle beam column, and ...
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JP6250635B2 |
An electrode adjustment method and apparatus are disclosed for use in workpiece processing. The assembly may include an electrode assembly having first and second ends. First and second manipulators may be coupled to the first and second...
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JP6250670B2 |
A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion sou...
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JP6250677B2 |
A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second ...
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JP6242513B2 |
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JP6243916B2 |
An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a...
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JP6238470B2 |
Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of a...
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JP6237133B2 |
An ion source is provided that includes an ionization chamber and two magnetic field sources. The ionization chamber has a longitudinal axis extending therethrough and includes two opposing chamber walls, each chamber wall being parallel...
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JP6238978B2 |
A high brightness ion source with a gas chamber includes multiple channels, wherein the multiple channels each have a different gas. An electron beam is passed through one of the channels to provide ions of a certain species for processi...
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JP6237127B2 |
An ion source is provided that includes at least one electron gun. The electron gun includes an electron source for generating a beam of electrons and an inlet for receiving a gas. The electron gun also includes a plasma region defined b...
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JP6238689B2 |
An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a so...
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JP6236480B2 |
To provide an emitter which is capable of returning a crystal structure of a head end into an original state with high reproducibility by re-arraying atoms by treatment, and is available continuously for a long time by suppressing rise o...
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JP6227257B2 |
An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of ...
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JP6220749B2 |
To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.An ion generation unit inc...
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JP6219594B2 |
To provide a thin film formation device capable of forming a dense thin film on a surface of a film deposited member.A thin film formation device 1 for forming a thin film on a surface of a glass substrate 2 by vapor depositing a vapor d...
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JP6214906B2 |
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JP6214880B2 |
One embodiment of a particle accelerator includes: a vacuum container with its inside evacuated to produce vacuum, the vacuum container being formed with a laser beam entrance window for allowing a laser beam to enter; a target arranged ...
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JP6211964B2 |
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JP6211962B2 |
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JP6208109B2 |
Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring th...
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JP6207884B2 |
To provide a charged particle beam device capable of achieving stable ion beam irradiation by suppressing impurity gas desorption in an emitter tip or in the periphery thereof.A charged particle beam device comprises: a needle-like anode...
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JP6204438B2 |
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a...
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JP6203648B2 |
To provide a negative ion source device which allows the replacement of a plasma generating part to be rapidly performed in a simple and handy manner.A negative ion source device 100 comprises: a chamber 108 with a through-hole 108e prov...
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JP6189198B2 |
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JP2017147123A |
To provide a technique for controlling an extraction form of ions extracted from a plasma chamber.A microwave ion source 10 comprises: a plasma chamber 12 having a microwave introduction part 26 for introducing microwaves into a plasma c...
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JP6185434B2 |
To provide a method of operating a gas field ion beam system.The gas field ion beam system comprises an external housing, an internal housing arranged within the external housing, an electrically conductive tip arranged within the intern...
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JP2017523562A |
The ion source chamber 132 for the ion implantation system has a textured surface to reduce surface peeling of the membrane on the inner wall of the ion source chamber. The residual stress generated by thermal expansion deviates due to t...
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JP6180952B2 |
A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of t...
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JP6180976B2 |
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JP6177123B2 |
An ion generator includes: an arc chamber; a repeller that includes a repeller plate provided within the arc chamber and a repeller extension portion inserted through a through hole communicating the inside and the outside of the arc cha...
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JP6178526B1 |
[Subject] The present invention solves a subject which cannot generate high-density ion efficiently by a small ion source, when an electron beam irradiation type is used for an evaporation source which evaporates a solid, and an object o...
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JP6178324B2 |
An apparatus and method for characterizing a particle beam provides receiving a particle beam in a central region of a reduced pressure enclosure; impacting the received beam against a beam strike that is thermally isolated from the encl...
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JP2017134934A |
To increase the reliability of an ion source.An ion source 10 comprises: a vacuum chamber 18; an annular magnetic field generator 16 placed in the vacuum chamber 18, and generating an axial direction magnetic field B in its radially insi...
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JP2017135124A |
To provide an ion beam processing apparatus, by using which an adhering matter adhering on an electrode can be selectively removed by utilizing reactivity, the electrode being included in an electrode assembly.An ion beam processing appa...
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JP6169043B2 |
An ion generator includes an arc chamber, a cathode that extends outward from the inside of the arc chamber in an axial direction and that emits a thermal electron into the arc chamber, a thermal reflector with a cylindrical shape provid...
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JP6169327B2 |
An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, in...
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JP2017126570A |
To achieve a mechanism which makes compact an ion-irradiation system, and shortens an ion optical length, and which can accurately adjusts an emission direction of ions from an emitter tip to sample direction.A charged particle beam micr...
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JP6165241B2 |
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JP6166376B2 |
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JP2017123265A |
To enhance reliability of an ion source.An ion source 10 includes a plasma chamber 12 to which high potential is applied, an insulating mechanism 50 provided so as to surround the outer periphery of the plasma chamber 12, a magnetic fiel...
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