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JP6499754B2 |
An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus in...
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JP6490917B2 |
There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing i...
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JP6480222B2 |
To enable removal of reaction by-product deposited on an extraction electrode so as to be capable of immediately returning to ion beam irradiation. A positive voltage period for applying a positive voltage to an extraction electrode 34 i...
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JP6474036B2 |
To provide a component exchanger capable of changing, in a small space, a component arranged in a vacuum chamber, without opening the vacuum chamber to atmosphere.There is provided a component exchanger 1 which can change a consumable co...
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JP2019023984A |
To achieve a reduction in adhering deposits produced on an electrode with a simple configuration.In an ion source including an electrode system for ion beam extraction, the electrode system including a liquid passage, the temperature of ...
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JP6469682B2 |
The invention is a unique and substantive improvement in ion source assemblies which is able to produce a ribbon-shaped ion beam having an arbitrarily chosen breadth dimension which is at least ten times greater [and often more than thir...
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JP6461933B2 |
A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion sou...
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JP6455494B2 |
The present invention provides an ion source that does not require a stop or control for holding the support substrate in a desired position to simply maintain the support substrate in a desired position. An ion source having a permanent...
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JP6457251B2 |
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JP2019501496A |
Methods and sources of ions are provided for extracting and accelerating ions. This ion source includes a chamber. In addition, the ion source further comprises a first hollow cathode having a first hollow cathode cavity and a first plas...
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JP6453852B2 |
An ion beam source includes a magnetic field unit including a first side facing a target object to be treated and a second side, where the first side is opened and the second side is closed, and the first side includes a plurality of mag...
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JP2019500741A |
The present disclosure relates to methods of operating a plasma reactor having an electron beam plasma source for independently regulating electron beam energy, plasma ion energy, and radical populations. The present disclosure further r...
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JP6450372B2 |
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JP6441702B2 |
To provide an ion source that can be effectively used for both monomer ions and cluster ions.An ion source 20 comprises a raw material gas introduction part 60 for introducing argon gas, a cluster generation chamber 30 which is connected...
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JP6439966B2 |
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JP2018198136A |
To provide a negative ion source device capable of accurately detecting a remaining quantity of cesium that is stored in a cesium supply part.A cesium supply part 130 comprises: a conductive part 137 that is provided inside of a storage ...
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JP6433515B2 |
A device including an imaging-type or a projection-type ion detection system and being capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam is provide...
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JP6430264B2 |
The invention provides an anion source device which increases generation amount of anions. The anion source device (100) comprises a filtering magnetic field generation portion (110B) which generates a magnetic field which shields electr...
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JP2018181717A |
To provide a positioning pin simplified in configuration according to the fixation of an extraction electrode in an ion source.At two end portions of a positioning pin P in a length direction, a screw S is formed on a first end portion 1...
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JP6423615B2 |
An ion source (100; 300; 600) is configured for electron ionization and produces coaxial electron and ion beams. The ion source includes an ionization chamber (208) along an axis, a magnet assembly (112; 612) configured for generating an...
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JP2018533184A |
An elongated insulator (302) is provided. The insulator may be located between the ground electrode (308) with an opening and the suppression electrode (306) with an opening. The insulator has an elongated body having a first end (316) a...
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JP6419078B2 |
The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provid...
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JP6418262B2 |
The present invention provides an ion beam irradiation apparatus and an ion source detaching method capable of improving the efficiency of ion source detaching work and simplifying the structure of anion source detaching jig. The ion bea...
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JP2018170295A |
To provide an ion source, an ion milling apparatus, and an ion milling method capable of obtaining a large milling rate.An ion gun 1 includes cathodes 11 and 12, an anode 13 having an exit hole of 3 mm or more therein and having an insid...
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JP6415388B2 |
A plasma generator includes: an arc chamber having a plasma generation region in which plasma is generated in the inside thereof; a magnetic field generator configured to apply a magnetic field to the plasma generation region; and a cath...
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JP2018166043A |
To provide a focused ion beam device capable of suppressing slow-down of a tip of an emitter.A focused ion beam device performs a first maintenance processing for cooling an emitter by a cooling device after a temperature of the emitter ...
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JP2018163808A |
To provide a manufacturing method of an emitter capable of molding a distal end of the emitter into a preferable shape even in a case where materials of the emitter are various.A manufacturing method of an emitter includes the steps of: ...
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JP6407991B2 |
A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to ...
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JP6388520B2 |
A beam extraction slit structure includes a plasma chamber interior surface that is, in operation, in contact with a plasma; a plasma chamber exterior surface that faces an extraction electrode; and a slit surface part that forms a beam ...
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JP6378360B2 |
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JP6373096B2 |
The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases compris...
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JP6375470B1 |
In the present invention, the amount of intermediate products generated when an ionized gas is reacted with an ion raw material to generate ions in the ion generation container of the ion source adheres to the supply-side tip and inner w...
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JP2018125271A |
To provide an electrode capable of significantly reducing the occurrence of an electric insulation breakdown (glitch) in a gap between electrodes of an ion source extraction electrode.By improving a pumping between electrodes of an extra...
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JP6371712B2 |
To solve the problem that ionization probability is low, and a sufficient ion current is not obtained, although a contact ionization type plasma source used for the manufacture of a inclusive fullerene, or the like generates a metal ion ...
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JP6370085B2 |
To provide an ion beam device capable of changing ion energy to perform irradiation when observation, processing and measurement are performed using ion beams, thereby achieving super high resolution observation, low damage observation, ...
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JP6355336B2 |
Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one ...
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JP6350234B2 |
Provided is an ion beam irradiation apparatus (100) capable of achieving uniformity of beam current with high stability in a short time. In a uniformity control routine promoting uniformity of ion beams, a control device executes: a weig...
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JP6353154B1 |
To provide an ion source assembly for generating a collision ionized ion beam. An input beam B of charged particles is made to flow into an ionization space R formed between a pair of laminated plates P1 and P2 and connected to a gas sup...
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JP6353104B2 |
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JP2018101557A |
To provide an ion microscope suitable for observing a water-containing sample and the like.An ion microscope 10 comprises: an inductively coupled plasma ion source 14 for generating an ion beam; a sample chamber 13 connected to the ion s...
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JP6344973B2 |
To enhance reliability of a microwave ion source.A microwave ion source 10 includes a plasma chamber 12 having an ion extraction part 22 provided with an extraction opening 24, and a first electrode 42, i.e., an extraction electrode prov...
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JP6346087B2 |
A method and apparatus for generating a pulsed jet of fluid, and transforming the jet into a plasma. The method includes using a high-pressure rapid solenoid valve, and a pipe mounted on an outlet opening of the solenoid valve to produce...
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JP2018081895A |
To downsize a device including a high frequency ion source.A high frequency ion source 100 comprises: a plasma container 600 formed by such a dielectric that high frequencies are allowed to pass therethrough, and having a first opening 6...
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JP6328023B2 |
In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum cha...
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JP2018073594A |
To expand an area to be irradiated with ions and to equalize the distribution of ions in the irradiated area.An ion source 105 includes: a discharge chamber 201; and flat plate-shaped electrodes 211, 212 which pull out ions from the disc...
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JP2018073841A |
To provide ion implantation using dopants and dopant gas mixtures for enhancing the lifetime and performance of an ion source in an ion implantation system.The invention provides an ion implantation system and method in which the perform...
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JP6307825B2 |
To provide a deposition preventive support member that can be exchanged easily, and to provide a plasma source including the same.A deposition preventive support member F arranged in a plasma generation container 1 includes a first membe...
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JP2018049842A |
To provide an ion gun of a Penning discharge system capable of narrowing beam at low ion beam current at low acceleration voltage, and an ion milling device/ion milling method having the same.An ion milling device which controls half-val...
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JP6294182B2 |
An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from t...
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JP6292310B2 |
A vacuum is maintained inside a vacuum partition (1). The whole of the solid packed container (3) is disposed inside the vacuum partition (1). A heater (7) sublimates the aluminum chloride (8) packed in the solid packed container (3) to ...
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