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JP7065162B2 |
To provide an ion source device capable of increasing the lead-out current value, while satisfying the required performance for the ion source device.An ion source device 10A includes cathode electrodes 13b, 13b emitting electrons, an an...
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JP7057612B2 |
To solve the problem relating to an ion generator including an ion generating electrode and a drawing-out electrode, the ion generator making ions being discharged from a sharpened part when high voltage is applied.An ion generator 1 inc...
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JP2022519663A |
The method of generating hydrogen ions involves generating a diode type 3a, 3b HF plasma PL. It allows the energy of the ions output by the plasma source to be set or adjusted in an improved manner.
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JP7041321B2 |
An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source materia...
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JP7033086B2 |
An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation...
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JP7032403B2 |
A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas f...
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JP7029633B2 |
An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and c...
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JP7024936B2 |
To provide a technique for preventing an introduction opening of a discharge assist gas-supplying pipe line from being bunged up owing to solidification and deposition of a metal material gas on a portion of connection of a raw material ...
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JP7023319B2 |
To provide a negative ion generation device capable of generating negative ions to irradiate an object in an appropriate state.The negative ion generation device for irradiating an object with negative ions has a plasma source 7 for supp...
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JP2022029437A |
To provide a non-contact DC ion beam source that generates a high-quality ion beam having high efficiency, a long life even at a high output, and excellent stability and focusing in principle.A non-contact DC ion beam source includes an ...
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JP2022515025A |
The electrode system for an ion source has a source electrode defining a source opening within the ion source chamber. The source electrode is connected to the source power supply. The first ground electrode defines the first ground open...
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JP6990691B2 |
The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions i...
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JP2022027720A |
To provide an ion implantation source for an ion implantation device, achieving an improvement in reliability.An insulator for an ion implantation source includes: a first portion 302 which includes a first plurality of guide walls 312a,...
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JP2022514243A |
Described are methods and systems for implant implantation in which a fluorine compound capable of forming multiple fluoroionic species is introduced into an ion implanter at a given flow rate. The fluorinated species are generated at a ...
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JP7007642B2 |
Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a fi...
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JP2022514242A |
An arc containing a fluorine gas source used to generate fluorine ion species for injection into a subject and one or more non-tungsten materials (graphites, carbides, fluorides, nitrides, oxides, ceramics). Describes a system and method...
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JP2022020776A |
To provide a device for ionizing a discharge gas and a sample material in a flow passage type which can be adopted to a high sensitivity analysis and does not actually destroy the sample material in a low cost.In a method for using an io...
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JP7014888B2 |
A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rat...
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JP2022510966A |
The ion implantation system includes an ion source having an ion source arc chamber housing that traps dense ions within the chamber housing. A drawer member defining the drawer opening allows ions to exit the arc chamber. The drawer mem...
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JP7009060B2 |
A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error ...
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JP7002921B2 |
In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons...
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JP7002593B2 |
To provide a device that forms a cross section by processing with an ion beam and observes the cross section with an ion microscope instead of a device that forms a cross section by processing a sample with an ion beam and observes the c...
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JP6998777B2 |
To provide an ion source device and a charged particle beam therapy device, capable of quickly adjusting an extracted amount of ions.In an ion source device, an extraction part 63 extracts ions generated in an internal space S of a body ...
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JP6997836B2 |
A method for the implantation of mono- or multi-charged ions on a surface of an object to be treated placed in a vacuum chamber, wherein this method includes the step that consist simultaneously of: injecting into the vacuum chamber a be...
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JP6995999B2 |
A system for implanting ions into a workpiece while minimizing the generation of particles is disclosed. The system includes an ion source having an extraction plate with an extraction aperture. The extraction plate is electrically biase...
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JP2022003631A |
To provide a collimator/hollow cylindrical electrode type DC particle beam source capable of generating, for a long period of time, an ion beam and plasma beam that have large output in principle, have excellent stability and convergence...
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JP6985570B1 |
The ion gun has an anode, a cathode having first and second portions facing the anode, and a magnet forming a space magnetic field between the first and second portions. An annular gap including a curved portion is provided between the f...
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JP6982614B2 |
An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source ...
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JP6976434B2 |
The present disclosure relates to a system and method for continuously supplying negative ions using multi-pulsed plasma sources. The system includes a plurality of plasma generators each to generate plasma by applying pulsed power to th...
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JP6973721B2 |
A method of charge mitigation in additive layer manufacturing is provided, which uses a charged particle beam (103) to fuse metal powder (122) within a metal powder bed (123) to form a product layer-by-layer, the method comprising using ...
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JP6972693B2 |
To provide an ion generation device that prevents adhesion of ions or the like to an extraction electrode.An ion generating device includes an ion generation unit that generates ions, an extraction electrode 17 that applies an electric f...
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JP6965115B2 |
To provide a liquid metal ion source capable of stably emitting ion beams.A liquid metal ion source includes one needle-like electrode 11 extending in an extension direction. The electrode 11 includes a base end, a tip 11T for emitting i...
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JP6963150B1 |
The ion gun has an anode, a cathode having first and second portions facing the anode, and a magnet forming a spatial magnetic field between the first and second portions. An annular gap including a straight portion and a curved portion ...
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JP6959935B2 |
An arc chamber liner has first and second surfaces and a hole having a first diameter. A liner lip having a second diameter extends upwardly from the second surface toward the first surface and surrounds the hole. An electrode has a shaf...
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JP6960060B2 |
A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or ...
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JP6959914B2 |
An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first d...
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JP2021174772A |
To increase the operational time of a charged-particle source, etc.A charged-particle source (100) for generating a charged particle comprises a sequence of electrodes including an emitter electrode (101) with an emitter surface (111), a...
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JP6952997B2 |
To improve plasma generation efficiency by increasing the volume of an ECR space, in a mirror magnetic field generator applied to an ECR ion source.MEANS FOR SOLVING THE PROBLEM: On the end side in the magnetic field direction of a plasm...
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JP6951102B2 |
An ion source includes an external housing, an electrically conductive tip, a gas supply system, configured to supply an operating gas into the neighborhood of the tip, and a cooling system configured to cool the tip. The gas supply syst...
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JP6948316B2 |
An indirectly heated cathode (IHC) ion source having improved life is disclosed. The IHC ion source comprises a chamber having a cathode and a repeller on opposite ends of the ion source. Biased electrodes are disposed on one or more sid...
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JP6948468B2 |
An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed materi...
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JP6945844B2 |
To provide a plasma generator and an ion source which are arranged so that a gas is prevented from being leaked to suppress the occurrence of abnormal discharge, thereby increasing a plasma generation efficiency.A plasma generator 1 comp...
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JP6942347B2 |
There are provided a small-sized ion source device, a particle beam generation device, and an ion beam generation method which generate a plurality of ion species while switching the ions species in a short time. An ion source device 1 w...
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JP2021525945A |
The present invention provides methods for in-situ joint nanoscale 3D imaging and chemical analysis of samples. In a preferred embodiment, a single charged particle beam device produces a sequence of two-dimensional nanoscale images of t...
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JP2021150288A |
To provide a method for imaging a sample.In a system 100, a method is provided for imaging a sample 124 under low vacuum with a charged particle beam 106. A magnetic field is provided in a detection area of a detector 128. Gas and plasma...
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JP2021524648A |
The present disclosure is Germanium tetrafluoride (GeF).4) Gas and hydrogen (3/4) Gas mixture,3/4Is present in an amount in the range of 25% to 67% (volume) of the gas mixture, or GeF4and3/4Is a volume ratio in the range of 3: 1 to 33:67...
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JP6927493B2 |
To provide an ion source in which a raw material liquid can be sufficiently supplied while the generation of droplets is suppressed and in which ions can be efficiently extracted from a supplied raw material liquid.An ion source 100 of t...
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JP2021116440A |
To provide an apparatus for manufacturing a vapor deposition film, capable of stably and sufficiently obtaining adhesion between a long-sized polymer film and a thin film even when continuously treated for a long time when subjecting the...
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JP6909618B2 |
According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H3+ ions and an operation mode of performing irradiation with an ion ...
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JP6911060B2 |
An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation...
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