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JP6162700B2 |
Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous t...
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JP2017120755A |
To provide novel compositions, systems and methods for improving a beam current during boron ion implantation.According to a preferred embodiment, a boron ion implantation process comprises: utilizing BH,BFand Hat specific ranges of conc...
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JP6156864B2 |
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JP6157025B2 |
A vaporizer delivery system for use in semiconductor manufacturing processes including a plurality of vertically stacked containers (22) for holding a vaporizable source material. Each of the vertically stacked containers includes a plur...
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JP6150705B2 |
To generate high density plasma in a microwave ion source.A microwave ion source 10 includes a plasma chamber 12 which includes a micro wave introduction unit 16, an ion extraction unit 18, and a sidewall 20 connecting the micro wave int...
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JP6145162B2 |
Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrod...
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JP6143544B2 |
To provide an ion source that suppresses a discharge which may occur between a plasma chamber and an extraction electrode.A microwave ion source 10 includes: a plasma chamber including a terminal end part 62 having an ion extraction aper...
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JP6144214B2 |
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JP6139011B2 |
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JP6138942B2 |
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JP6129164B2 |
An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools t...
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JP6124709B2 |
To provide a microwave ion source capable of generating desired magnetic field distribution within a plasma chamber in simple configuration.A microwave ion source 10 comprises: a plasma chamber 12 which includes a vacuum window 24 for re...
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JP6124715B2 |
To enhance plasma density in the plasma chamber of a microwave ion source.A microwave ion source 10 includes a plasma chamber 12 including a microwave introduction part 16 and an ion extraction part 18, and a magnetic field generator 40 ...
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JP6126425B2 |
A focused ion beam apparatus has an emitter for emitting an ion beam, an ion source chamber accommodating the emitter, a cooling unit and a heating unit for cooling and heating, respectively, the emitter, and an ion source gas supply sec...
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JP6121767B2 |
To provide a focused ion beam device which can produce an ion current stably regardless of the termination structure at the tip of an emitter, and to provide an irradiation method of a focused ion beam.A focused ion beam device 1 include...
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JP6116631B2 |
Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip ...
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JP6118846B2 |
A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a se...
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JP6116303B2 |
A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens el...
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JP6114262B2 |
An ion implantation machine includes an enclosure that is connected to a pump device, a negatively polarized substrate-carrier that is arranged inside the enclosure, and a plasma feed device in the form of a generally cylindrical body ex...
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JP6112930B2 |
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JP6108975B2 |
To provide a technology that improves the shape reproducibility and stability of a gas cluster ion beam and enables beam axis adjustment work to be easily conducted in a short time regardless of the skill levels of workers.A gas cluster ...
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JP6104461B2 |
A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundan...
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JP6100619B2 |
An ion gun (IG) has an ionizing chamber (IC) and a ion generation unit (GP) for generating ions in the ionizing chamber (IC). The ion generation unit (GP) includes an anode (13), a cathode (11), a gas supply mechanism (10), and a permane...
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JPWO2015080239A1 |
Provided is an extraction electrode capable of obtaining an ion beam having high straightness. The extraction electrode (1) of the present invention includes an insulating layer (2) made of an anodic oxide film, an accelerating electrode...
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JP2017054707A |
To shorten a time for cleaning an ion source.An ion source 10 comprises: an ion source chamber 11 having a chamber main body 13, a front slit part 15 and an insulating part 16 interposed therebetween. The ion source further comprises, on...
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JP6094786B2 |
To provide a filament replacing tool capable of reducing the number of times of attachment and detachment of an auxiliary vacuum container during replacement without always occupying a wasteful space for replacement of a filament.A filam...
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JP6093752B2 |
The charged particle beam microscope is configured of: a gas field ionization ion source (1); a focusing lens (5) which accelerates and focuses ions that have been discharged from the ion source; a movable first aperture (6) which limits...
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JP6086795B2 |
To provide a monitoring device and a monitoring method for simply knowing the degree of wear of a member in the plasma chamber of a microwave ion source.A monitoring device of a microwave ion source 10 includes a microwave ion source 10 ...
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JP6084713B2 |
A novel method and system for using aluminum dopant compositions is provided. A composition of the aluminum dopant compositions is selected with sufficient vapor pressure and minimal carbon content, thereby enabling ease of delivery to a...
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JP6085596B2 |
An inductively-coupled plasma source for a focused charged particle beam system includes a plasma chamber and a fluid that is not actively pumped surrounding the plasma chamber for providing high voltage isolation between the plasma cham...
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JP6083260B2 |
To provide an ion source which improves efficiency of cleaning performed in a high-frequency type ion source.An ion source IS generates plasma P in a plasma chamber 1 by using a high-frequency power supply Vh, and extracts an ion beam IB...
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JP6076838B2 |
An insulation structure provided among a plurality of electrodes for extraction of an ion beam from a plasma generating section is provided. The insulation structure includes an insulation member including a first part connected to a fir...
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JP2017503332A |
Systems and methods for using high performance photoionization subsystems are disclosed. The embodiments of the present disclosure employ narrow bandwidth laser irradiation that selectively excites the ionized resonance state of gas atom...
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JP6068553B2 |
To provide an ion beam processing observation technique which allows for observation of the processed part of a sample, by processing the sample with an ion beam extracted from the same ion source, in a technique for observing the cross-...
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JP6052792B2 |
To provide a microwave ion source which can be utilized for wide application and also to provide a method for operating such a microwave ion source.A microwave ion source 10 includes a plasma chamber 12, and a magnetic field generator 16...
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JP6048829B2 |
To stably operate an ion source over a long period by suppressing evaporation of a carbon compound generated inside a vessel for plasma production.An ion source IS, generating ion beams containing carbon ions, includes: a plasma generati...
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JP6043476B2 |
Provided is a charged particle beam microscope which has a small mechanical vibration amplitude of a distal end of an emitter tip, is capable of obtaining an ultra-high resolution sample observation image and removing shaking or the like...
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JP2016207520A |
To provide a device capable of irradiating an entire surface of a substrate with an ion beam and further capable of shortening the time required for substrate processing even if the substrate is scanned and rotated.An ion beam irradiatio...
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JP2016186876A |
To enhance the reliability of an ion source.An ion source 10 includes: a plasma chamber 12 having an ion extraction part 22 provided with an extraction opening 24, and a sidewall 20 extending in the axial direction from the ion extractio...
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JP6001292B2 |
A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first...
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JP6000325B2 |
A plasma generator having a housing surrounding an ionization chamber, at least one working-fluid supply line leading into the ionization chamber, the ionization chamber having at least one outlet opening, at least one electric coil arra...
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JP5989959B2 |
A focused ion beam apparatus includes an ion gun unit having an emitter tip, a gas supply unit that supplies gas to the tip, and an ion source gas supply source. An extracting electrode ionizes the gas adsorbed onto the surface of the ti...
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JP5988570B2 |
A charged particle source (202) for a focused particle beam system (200) such as a transmission electron microscope (TEM), scanning transmission electron microscope (STEM), scanning electron microscope (SEM), or focused ion beam (FIB) sy...
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JP5988025B2 |
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JP5985362B2 |
To provide an ion implantation device and an ion implantation method which are useful for improvement in productivity.An ion implantation device 10 includes an ion source 18 with a guide-out electrode system 24 for guiding a ribbon beam ...
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JP2016162692A |
To provide a laser ion source which allows for exact alignment of laser irradiation position, while maintaining the vacuum state.A laser ion source 1 includes an evacuated vacuum vessel 1a, a target 2 installed in the vacuum vessel 1a, a...
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JP2016524793A |
An isotope-enriched silicon precursor composition is disclosed as an ion implantation useful for enhancing the performance of an ion implantation system for a corresponding ion implantation without isotope enrichment of the silicon precu...
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JP5971727B2 |
To provide a long-life electrode for an ion source having superior cooling efficiency and anti corrosion characteristics.An electrode for an ion source comprises: a metal electrode plate 1 which has a plurality of beam extracting holes 2...
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JP5972614B2 |
To provide a semiconductor device which provides a doping device adding oxygen and improves electric characteristics.A doping device includes: a gas introduction part into which an inactive gas is introduced; an arc chamber having a fila...
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JP5970143B1 |
A grid by which processing is easy and a projection part of carbon fiber cannot be easily formed in a wall surface of a hole at the time of processing of a hole is provided. It is a tabular grid (200) which has a hole (202), and is the g...
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