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JP5969586B2 |
To provide an ion beam device (an ion beam microscope or a focused ion beam processing device) which allows for high resolution observation or high accuracy processing by preventing the vibration, generated in cooling means of a gas fiel...
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JP2016524277A |
A method for reducing particle contamination in an ion extraction system, in which an ion beam is formed from an ion source that works in conjunction with an extraction assembly, is disclosed. A cathode voltage is applied to the ion sour...
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JP5959310B2 |
To provide a technology for further achieving longer life of a microwave ion source.A microwave ion source 10 includes a plasma chamber 12 having a window for receiving a microwave in a plasma chamber 58 for generating plasma, and a prot...
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JP5955792B2 |
To provide a microwave ion source in which the volume of a vacuum chamber for plasma generation is adjustable, and to provide an adjustment device therefor.A microwave ion source 10 comprises: a plasma chamber 11 including an inlet end 1...
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JP2016126956A |
To achieve reduction and removal of an adhered deposit generated on an electrode with an inexpensive simple configuration.The ion source includes an electrode for ion beam extraction cooled with cooling water. The flow rate of the coolin...
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JP2016126938A |
To provide a high density small diameter ion beam.Outside of an electrode exposure part 15, located around the outlet 18 of an anode electrode 24, is covered with an insulation member 14, and the surface of the electrode exposure part 15...
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JP2016115508A |
To adjust a distance between at least one electrode constituting an electrode system 30 and a plasma generation container 21 without generating particles inside a chamber 10.An ion source comprises a distance adjustment mechanism 40 for ...
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JP5936430B2 |
The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion sour...
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JP5934237B2 |
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JP5934222B2 |
This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source co...
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JP2016100056A |
To provide an ion source in which wear and deterioration of a flange due to sputtering of ions or the like is reduced and insulation properties between members having potentials different from each other are improved.An ion source includ...
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JP5925843B2 |
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JP5925084B2 |
An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons ...
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JP5923228B2 |
An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the ...
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JP5922125B2 |
An improved method and apparatus for imaging and milling a substrate using a FIB system. Preferred embodiments of the present invention use a mixture of light and heavy ions, focused to the same focal point by the same beam optics, to si...
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JP2016091795A |
To improve work efficiency during maintenance of an ion source.An ion source IS comprises a plasma generation chamber 1 in which plasma is generated, and extraction electrode systems 7-9 which are formed from three or four electrodes for...
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JP2016514352A |
A constituent, a system, and a method for ion implantation for pouring of a dopant kind are indicated. Use of parallel style gas for attaining profitableness in a specific selenium dopant source constituent and a pouring system feature, ...
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JP2016084494A |
To provide a thin film deposition apparatus and a thin film deposition method that give high adhesion force between a plastic film and a thin film even under severe temperature conditions and high productivity without causing wrinkles an...
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JP5919402B2 |
An inductively coupled plasma source (100) for a focused charged particle beam system includes a dielectric liquid (126) that insulates and cools the plasma chamber (102). A flow restrictor (158) at an electrical potential that is a larg...
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JP5919195B2 |
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B 2 F 4 ...
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JP5908964B2 |
A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing t...
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JP5906196B2 |
A dopant gas composition comprising a dopant gas including boron trifluoride or diborane, a diluent gas comprising hydrogen, and optionally a co-species gas, wherein at least one of the dopant gas and the optional co-species gas, when th...
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JP5906505B2 |
To provide an effective charge-up countermeasure in adjusting a frequency of a piezoelectric element by ion etching without changing a structure of a general ion gun.A frequency measuring method of the piezoelectric element by a frequenc...
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JP2016511504A |
A source for delivering the CO-containing dopant gas composition is provided. The composition comprises a controlled amount of diluent gas mixture such as xenon and hydrogen, each provided in a controlled volume ratio, thereby ensuring o...
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JP5903864B2 |
To provide an ion milling device which facilitates adjustment of a processing profile such as ion beam intensity or uniformity in processing.An ion milling device comprises: a filament 20 for emitting thermal electrons as an ion source; ...
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JP5903851B2 |
To provide an ion milling device with an extraction electrode, for preventing deformation in a thickness direction due to heat.An ion milling device has: a reference hole 25a which is formed in an acceleration electrode 20a to position a...
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JP5898454B2 |
A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit ...
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JP5898433B2 |
When hydrogen is introduced into a plasma chamber which includes the dielectric plate as part of an exterior wall, and surface waves are generated on the dielectric plate using microwaves, a region where negative hydrogen ions are easily...
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JP5896708B2 |
The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscop...
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JP5892684B2 |
To provide an ion implantation method with good productivity, by which a uniform ion concentration distribution can be obtained over the whole length in the thickness direction of a workpiece at a constant acceleration voltage.In the ion...
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JP5878512B2 |
This invention relates to a plasma source in the form of plasma generator (13) which utilizes an antenna (11) and an RF source (12). The generated plasma flows into a chamber (14) and ions are accelerated out of the chamber (14) by grid ...
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JP5878369B2 |
A bone implantable medical device made from a biocompatible material, preferably comprising titania or zirconia, has at least a portion of its surface modified to facilitate improved integration with bone. The implantable device may inco...
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JP5875515B2 |
A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid pla...
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JP5872541B2 |
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JP2016027525A |
To provide a technique for enhancing thermal insulation performance in an ion gun, while enhancing heat transfer efficiency between a chip and a heat exchanger by making the ion gun compact, in a charged particle beam device including th...
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JP5852769B2 |
A focused ion beam (FIB) system (900) is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber (954) containing the plasma, a conducting source biasing electrode (906) in contact with the plasma and...
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JP5847184B2 |
An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chambe...
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JP5839240B2 |
An apparatus includes an arc chamber housing defining an arc chamber, and a feed system configured to feed a sputter target into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber ho...
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JP5832708B2 |
A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plura...
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JP5832357B2 |
To provide a technology which achieves long life of an ion source.A microwave ion source 10 includes: a plasma chamber 12 having a vacuum window 24 for receiving microwaves in a plasma chamber 58; a liner 78 forming at least a part of an...
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JP5830601B2 |
In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these pro...
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JP2015215972A |
To provide an ion beam processing device that can suppress occurrence of particles from an extraction electrode more simply as compared with prior arts, and lengthen a maintenance cycle of the extraction electrode.An ion beam processing ...
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JP5827235B2 |
Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. ...
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JP5822767B2 |
An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space f...
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JP5813536B2 |
According to one embodiment, there is provided an ion source. The ion source includes a vacuum-exhausted vacuum chamber, a target which is set in the vacuum chamber and generates a plurality of valences of ions by irradiation of a laser ...
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JP2015204185A |
To reduce deposits produced in the plasma chamber of a microwave ion source.A microwave ion source 10 includes a plasma chamber 11 having a microwave introduction window 16 for introducing a microwave into the internal space 12 of the pl...
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JP2015533014A |
A radio frequency (RF) antenna for a plasma ion source is disclosed. This RF antenna includes a low resistance metal tube with inner and outer diameters. The low friction polymer tubing also has an inner and outer diameter and surrounds ...
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JP5809890B2 |
To avoid a glow discharge during the use of a conventional gas ionization chamber, there is no alternative but to increase a gas pressure. Therefore, while a conventional gas ionization chamber is used, an ion current cannot be increased...
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JP5805930B2 |
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JP5808815B2 |
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