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JP2020068161A |
To suppress the deposition of reactants on an extraction electrode and realize stable long-term operation of an ion source.An ion source 1 includes a plasma generation chamber 2 into which a halogen-containing raw material is supplied, a...
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JP6689602B2 |
Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingemen...
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JP6680271B2 |
A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electr...
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JP6681483B2 |
A vaporizer with several novel features to prevent vapor condensation and the clogging of the nozzle is disclosed. The vaporizer is designed such that there is an increase in temperature along the path that the vapor travels as it flows ...
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JP6673931B2 |
An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic em...
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JP6668281B2 |
To provide an ion source capable of outputting an ion beam of a heavy-current and a high energy and an ion beam generating method, without using a liner accelerator.An ion source 10 comprises; a cylindrical outside magnetic part 16; an i...
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JP6668376B2 |
An apparatus for creating an angled ion beam for implanting into a substrate is disclosed. The apparatus includes a plasma chamber in which plasma is created. The extraction aperture includes a plurality of rotatable plates. Ion beamlets...
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JP6664023B2 |
An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shiel...
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JP6666361B2 |
Provided herein are approaches for improving ion beam extraction stability and ion beam current for an ion extraction system. In one approach, a source housing assembly may include a source housing surrounding an ion source including an ...
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JP6659281B2 |
A focused ion beam apparatus includes an ion source that emits an ion beam, an extraction electrode that extracts ions from a tip end of an emitter of the ion source, and a first lens electrode that configures a condenser lens by a poten...
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JP6653066B2 |
A plasma source is provided. The plasma source includes a chamber body inside which plasma is generated, a first mirror magnet, a second mirror magnet, and a cusp magnet provided around the chamber body and spaced apart in a axial direct...
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JP6653067B2 |
To enable an ion source 101 mounted on an ion source support base X to assume a lain posture in a stable condition.There is provided an ion source support base X on which an ion source 101 comprising a long-shaped plasma generation conta...
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JP6652689B1 |
The ion gun of the present invention has an anode, an inner surface facing the anode, an outer surface on the opposite side of the inner surface, a slit provided at a position corresponding to the anode, and one end of the outer surface ...
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JP6655007B2 |
In accordance with one embodiment of the present invention, an end-Hall ion source has an electron emitting cathode, an anode, a reflector, an internal pole piece, an external pole piece, a magnetically permeable path, and a magnetic-fie...
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JP6649812B2 |
To provide an electron source unit which can enable a charging processor with an extremely high effect in charging a processing target to a desired potential.An electron source unit 3 comprises: an electron generation source 5 which gene...
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JP6646150B2 |
To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder ...
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JP6646767B2 |
An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to t...
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JP6642612B2 |
An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extr...
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JP6637055B2 |
To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permane...
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JP6632937B2 |
To provide a gas cluster beam device which is miniaturized.A gas cluster beam device of an embodiment, comprises: a generation part; an ionization part; an acceleration part; first to third electrodes; a magnet; a power source; and an ir...
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JP6625707B2 |
A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to...
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JP6624862B2 |
To provide an ion implanter capable of prolonging the life of a front slit.A spacer plate 6 capable of defining a slit width S2, smaller than the slit width S1 of a front slit 3, is provided on the lower surface of the front slit 3 on th...
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JP6622806B2 |
A system and method for dynamic heating of a workpiece during processing is disclosed. The system includes an ion source and a plurality of LEDs arranged in an array, which are directed at a portion of the surface of the workpiece. The L...
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JP6608769B2 |
Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which ...
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JP2019197645A |
To provide an ion beam generation technique capable of outputting different kinds of ion beam from one ion beam generating device comprising two or more beam derivation ports.An ion beam generating device 1 comprises: gas introduction po...
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JP6598243B2 |
To provide an ion beam source device increasing the current density of an ion beam in a power saving manner without using a device for neutralizing the ion charges.An ion beam source device extracting an ion beam by using a mesh structur...
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JP6598005B2 |
To suppress warping and distortion due to self-weight or machining, and also to suppress the warping and distortion due to thermal expansion.A charged particle source 100 having an extraction electrode system 6 for extracting charged par...
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JP6595734B1 |
To prevent a insulating ring for insulating an ion source tank and a bottom plate from being broken. A tubular first eaves 20 is projected from an end 33 of an ion source tank 11 toward a bottom plate 21, and a tubular second eaves 25 is...
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JP6594888B2 |
A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations...
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JP6590778B2 |
To provide an ion source device which inhibits a plate disposed on an inner wall of an arc chamber body from moving from a home position.An ion source device 100 includes: an arc chamber body 1; a through hole 1a for a cathode member pro...
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JP6588175B1 |
To provide an ion implantation device having a large effective exhaust speed and capable of increasing an ion beam amount. A heat shielding device having a plurality of heat shielding plates is arranged at a place in the middle of a path...
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JP6584787B2 |
A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumferenc...
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JP6584786B2 |
A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that...
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JP6573099B2 |
The purpose of the present invention is to transfer an ion source in a reliably stable state. According to the present invention, an ion source comprises: a case (10) which is provided with an ion outlet port (O); an electrode holding me...
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JP6560871B2 |
A focused ion beam apparatus is equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an opt...
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JP6556716B2 |
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JP2019114567A |
To achieve a mechanism which makes compact an ion-irradiation system and shortens an ion optical length, and which can accurately adjust an emission direction of ions from an emitter tip (21) to a sample direction.A charged particle beam...
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JP6539414B2 |
Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion imp...
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JP6538005B2 |
To provide a negative ion source device capable of suppressing a decrease in an amount of negative ions drawn out from a negative ion source.A negative ion source device 100 according to one embodiment comprises: a chamber 108 in which n...
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JP6529000B2 |
The present invention relates to an ion source (IS1), which is to reduce the operation loss of an ion source caused by filament exchange regardless of the diameter of a filament. According to the present invention, the ion source (IS1) c...
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JP6521303B2 |
To increase mechanical strength of each electrode plate and meanwhile, set a distance between the electrode plates to a desired value, in an extracting electrode system constituted of three or more electrode plates.An extracting electrod...
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JP2019075264A |
To provide a highly maintainable negative ion source that does not require disassembly and heating.A negative ion source according to the present invention includes a discharge vessel 2 in which a hydrogen isotope plasma is generated in ...
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JP3221214U |
To provide an ion source side cooling device. The ion source cavity 10, a cooling sheet 20 and a support base 30 are mainly connected to each other, and at least one attachment portion 201 is provided at one end of the cooling sheet 20, ...
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JP2019075299A |
To provide an ion beam generator excellent in secondary ion generation efficiency of organic samples and analyzer using the ion beam generator.An ion beam generator (300) includes an ion liquid, means (301) for supplying the ion liquid, ...
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JP6515118B2 |
An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shiel...
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JP6514425B1 |
Provided is a long-lived ion source capable of producing a large amount of aluminum ions. The cathode electrode 22 arranged inside the chamber 21 is energized to raise the temperature of the filament 20, and the aluminum nitride raw mate...
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JP6515253B1 |
The present invention provides a technique for suppressing an abnormal discharge caused by an insulating film due to a by-product when an ionizing gas and an ion raw material are reacted in an ion generation container of an ion source to...
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JP2019512052A |
The present invention relates to the generation and control of electron emission and transport in plasma devices for the purpose of enhancing ionization in sputtering including magnetron sputtering, ion treatment, thermal deposition, ele...
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JP2019067488A |
To monitor the density of plasma generated in each cathode, in an ion source including a plurality of cathodes.In an ion source 1, plasma is generated at the inside of a chamber 2 and an ion beam 4 is drawn from the plasma. The ion sourc...
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JP6501891B2 |
An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS in...
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