| Document |
Document Title |
|
WO/2023/228367A1 |
An optical semiconductor device according to the present disclosure comprises: a stem having a first surface and a second surface on the reverse side from the first surface; a semiconductor laser provided on the first-surface-side of the...
|
|
WO/2023/228403A1 |
This optical device comprises a gain region (101) that constitutes a waveguide-type semiconductor laser and a waveguide-type optical modulation region (102) that modulates laser light from the semiconductor laser. The semiconductor laser...
|
|
WO/2023/226610A1 |
A coherent array laser structure and a preparation method. The coherent array laser structure comprises an array light source, a first resonant cavity and a second resonant cavity, wherein a high-reflection area and a low-reflection area...
|
|
WO/2023/228234A1 |
A semiconductor laser (100) comprises a ridge (5) that is formed in an n-type semiconductor substrate (1) and an embedded layer (25) that is embedded so as to cover both sides in an x direction perpendicular to a y direction, which is th...
|
|
WO/2023/226808A1 |
Provided in the present disclosure is a polygonal microcavity chaotic laser, comprising a semiconductor microcavity (11), having a cross section of a regular polygon or of a regular polygon with arc edges, and used for forming total inte...
|
|
WO/2023/228851A1 |
A protective case (1) comprises a protective cover (10) and a transparent plate (18). A bottom surface opening (10j) is provided in a first bottom surface (10a) of the protective cover (10). A front surface opening (10a) is provided in a...
|
|
WO/2023/229021A1 |
This semiconductor light emitting device comprises a substrate, a light emitting element mounted on the substrate, a transistor, and a first capacitor module. The first capacitor module has a first main surface facing the substrate, and ...
|
|
WO/2023/229437A1 |
The present invention provides an optical device comprising: a first cladding layer formed on a substrate; a multiple quantum well (MQW) active layer formed on the first cladding layer all over a light source area and a modulator area; a...
|
|
WO/2023/223056A1 |
A photonic device (200) has a lower epitaxial layer structure (144) that includes an active layer structure (125) and a channel (254) defined by a current blocking region (252, 256) patterned by selective introduction of material (360) (...
|
|
WO/2023/224741A1 |
One example includes a quantum lidar system. The system includes a beam generator configured to generate a signal beam and an idler beam and a beam combiner configured to generate a combined optical beam comprising the signal beam and th...
|
|
WO/2023/222239A1 |
The invention concerns a method for manufacturing an optoelectronic device comprising the steps: Providing a carrier substrate with a plurality of alignment posts at least partially embedded into the carrier substrate, wherein the alignm...
|
|
WO/2023/223676A1 |
A semiconductor laser element according to the present invention is provided with a light emitting layer, a transparent electrode, and a p-side semiconductor layer that is arranged between the light emitting layer and the transparent ele...
|
|
WO/2023/222687A1 |
Disclosed is a tunable laser device, comprising: a tunable fiber laser and a laser-control module, wherein: the tunable fiber laser is configured to generate laser light having a center wavelength controlled by one or more Bragg grating(...
|
|
WO/2023/223450A1 |
This semiconductor optical integrated device comprises a first direct modulation laser (101), a second direct modulation laser (102), a first optical waveguide (103), a second optical waveguide (104), and an optical multiplexer (105). Th...
|
|
WO/2023/224546A1 |
A semiconductor laser is operable to emit a beam of laser radiation. The laser comprises a substrate (10), a first Bragg reflector layer sequence (20) on said substrate (10), an active layer sequence (21) on said first Bragg reflector la...
|
|
WO/2023/221943A1 |
An optical device, a laser light source, and a manufacturing method, relating to the technical field of laser. The laser light source comprises: a drive backplane comprising a first substrate base (1) and a drive circuit layer (2) provid...
|
|
WO/2023/222481A1 |
A laser module (1) comprises a laser (90), which is designed to emit a laser beam (8) propagating along an optical axis (O), a collimating lens (40), which collimates the laser beam emitted from an emission facet (96) of the laser (90), ...
|
|
WO/2023/223859A1 |
A semiconductor light-emitting element (10) comprises: a first semiconductor layer (32); an active layer (33); a second semiconductor layer (34); an electrically insulating current block layer (21); a contact electrode (22) in contact wi...
|
|
WO/2023/222483A1 |
The disclosure relates to an optoelectronic device (1) comprising a carrier (2) with at least a first and a second contact via (2.1, 2.2) extending through the carrier (2), at least one light emitting element (3) arranged on the carrier ...
|
|
WO/2023/216734A1 |
A tunable laser (100), comprising: a channel selection assembly (20), a plurality of optical amplifiers (10), a micro-ring filtering assembly (30) and a reflection assembly (40). The micro-ring filtering assembly (30) is coupled to the r...
|
|
WO/2023/218069A1 |
In the method, i) a beam-shaping optical element (2) or an optical reference element (2') is aligned and fixed coaxially with respect to the axis of rotation of a mandrel (5) in a first step, ii) the emitting element (1) is inserted into...
|
|
WO/2023/220415A1 |
An optical cavity array includes a plurality of mirrors that form an optical cavity, a first lens system located within the optical cavity, and a second lens system located within the optical cavity. The first lens system has a first out...
|
|
WO/2023/216409A1 |
A thermally tuned laser chip and a manufacturing method therefor. The thermally tuned laser chip comprises a substrate (1), and multiple functional layers (2) that are sequentially grown on the substrate (1), wherein: a ridge waveguide o...
|
|
WO/2023/216735A1 |
A high-speed directly modulated semiconductor laser device and a preparation method therefor. The semiconductor laser device comprises an optical waveguide (1) and an optical grating (2), which is formed by means of a one-step etching pr...
|
|
WO/2023/219132A1 |
Provided is a semiconductor laser element (1) comprising a semiconductor laminated structure (20) that is formed on one surface a substrate (10), a first coating film (31) that is formed on an end surface (20F) on the front side of the s...
|
|
WO/2023/216234A1 |
An electro-absorption modulated laser chip and a manufacturing method therefor, relating to the technical field of semiconductor photoelectric emission, and capable of solving the problems that signal distortion is caused by light crosst...
|
|
WO/2023/218782A1 |
This light source device comprises: a light source that outputs light; a reflection unit (spatial optical modulator) that has an input part for a control signal and that is configured to be able to control a reflection angle distribution...
|
|
WO/2023/217120A1 |
Provided in the present application is a multi-mode laser apparatus, which is applied in the field of optics. The multi-mode laser apparatus comprises a multi-mode laser device, a mode scrambler, a mode demultiplexer and Y Bragg gratings...
|
|
WO/2023/218005A1 |
The present invention relates to a broad-area diode laser, BAL, with an integrated p-n tunnel junction. More particularly, the present invention relates to a high-performance broad-area diode laser in which, in order to improve the beam ...
|
|
WO/2023/213710A1 |
The invention relates to an optoelectronic semiconductor laser component (1) comprising a semiconductor body (10) with an n-type region (101), a p-type region (102), and an active region (103) which is designed to generate electromagneti...
|
|
WO/2023/213481A1 |
The invention relates to an optoelectronic semiconductor component (1). The optoelectronic semiconductor element (1) comprises a semiconductor body (10) which is provided to emit electromagnetic radiation in a main emission direction (E)...
|
|
WO/2023/214468A1 |
A multi-chip optical module (2) obtained by packaging a plurality of IC chips (201A, 201B, 201C) mounted on a single substrate (101) includes: a lid component (203) that forms a housing space (S) for the plurality of IC chips (201A, 201B...
|
|
WO/2023/213328A1 |
A longitudinal carrier modulation type high-power semiconductor light-emitting chip and a preparation method therefor. The longitudinal carrier modulation type high-power semiconductor light-emitting chip comprises: an active layer (1); ...
|
|
WO/2023/213480A1 |
The invention relates to an optoelectronic semiconductor component (1) comprising a semiconductor body (10) with an n-type region (101), a p-type region (102), and an active region (103) which is designed to emit electromagnetic radiatio...
|
|
WO/2023/215626A1 |
A system for eye tracking is disclosed. The system may detect illumination including a first wavelength emitted from one or more illumination sources. The illumination may propagate along a waveguide(s) to a termination node(s) associate...
|
|
WO/2023/210676A1 |
A semiconductor light-emitting element (1) comprises an active layer (30), a P-type cladding layer (40), a contact layer (50), and an insulation film (60). A ridge (R) is formed in a region including the P-type cladding layer (40) and th...
|
|
WO/2023/210550A1 |
In the present invention, partial damage to a light source is detected. A light source drive device according to the present disclosure has a light source control unit, and an abnormality detection unit. The light source control unit inc...
|
|
WO/2023/208827A1 |
A method for operating a laser device (20) is provided, the method comprising providing an emitter structure (21) of the laser device (20) with a first amount of power by a driving circuit (22) of the laser device (20), wherein the emitt...
|
|
WO/2023/206123A1 |
Disclosed in the present invention are a semiconductor laser and a display device thereof. The semiconductor laser comprises a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween; a first wav...
|
|
WO/2023/209939A1 |
An optical module according to the present invention is provided with: an optical semiconductor element (10) wherein an electrode pad (10b) is formed on the front surface; an insulating substrate (30) wherein electrode pads (30b, 30c) ar...
|
|
WO/2023/211361A1 |
The present invention relates to an optical bench apparatus (100) for a heterogeneous laser integration. The optical bench apparatus (100) comprises a first chip (101) including a first substrate (102a), a first waveguide and an optical ...
|
|
WO/2023/203661A1 |
This optical module comprises: a semiconductor laser (5); a light monitor (6) having a first light receiver (63) that receives laser light from the semiconductor laser (5), a light filter (64) that receives laser light from the semicondu...
|
|
WO/2023/202779A1 |
A lidar apparatus includes a vibration means configured to apply vibrations to a laser part of a lidar sensor to provide sensor pitch variations of an amplitude modulo less than or equal to a resolution of the lidar sensor. The lidar app...
|
|
WO/2023/203026A1 |
A semiconductor component (10) for emitting light comprising a main body (11), which has at least one mesa unit having at least one mesa portion comprising – arranged on a surface (18) of the main body (11) – an emission region (13) ...
|
|
WO/2023/203774A1 |
A semiconductor laser device according to the present disclosure comprises: a stem; a thermoelectric element that is provided to a position which is on an upper surface of the stem and which is displaced to one side with respect to the c...
|
|
WO/2023/204992A1 |
One example includes an atomic optical reference system. The system includes an optical system comprising a laser configured to generate an optical beam. The system also includes a vapor cell comprising alkali metal atoms that are stimul...
|
|
WO/2023/202184A1 |
An optical module (100) and an optical communication device. The optical module (100) comprises a first housing (110), a second housing (120), an optoelectronic element (130) and a circuit board (140). The optoelectronic element (130) an...
|
|
WO/2023/198225A1 |
A lateral optical mode control high power semiconductor device, a preparation method therefor, and a semiconductor packaging structure. The lateral optical mode control high power semiconductor device comprises: a semiconductor substrate...
|
|
WO/2023/199645A1 |
Provided is a surface emission laser which can suppress structural complications and control a polarization direction. A surface-emission laser according to the present technology comprises a resonator including first and second struct...
|
|
WO/2023/200169A1 |
A VCSEL-based optical device having a common anode and a plurality of insulated cathode structures, and an optical module are disclosed. According to one aspect of the present embodiment, provided are: a VCSEL having a common anode struc...
|
