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WO/2020/218815A1 |
The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing ...
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WO/2020/218816A1 |
The present invention relates to an etching device using an etching chamber, comprising: an etching liquid storage chamber in which an etching liquid is stored; a connection unit communicating with the etching liquid storage chamber; an ...
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WO/2020/218813A1 |
The present invention relates to an etching device comprising: an etching chamber; an opening/closing unit for opening/closing the etching chamber; and a locking unit for selectively locking the opening/closing unit.
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WO/2020/203563A1 |
The present invention addresses the problem of providing an etching liquid for a liquid crystal polymer and a method for etching a liquid crystal polymer in which the shape of the etched liquid crystal polymer is close to a design shape,...
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WO/2020/197056A1 |
The present invention relates to a composition for etching, comprising phosphoric acid, hydrogen peroxide, and water and, more specifically, to a composition for etching a laminate of a titanium nitride film and a tungsten film, the comp...
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WO/2020/197057A1 |
The present invention relates to a composition for etching a laminate of a titanium nitride film and a tungsten film, which maintains certain selectivity and does not exhibit a reduced etching rate in a high-temperature process in a meth...
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WO/2020/185745A1 |
Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon mater...
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WO/2020/185762A1 |
Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solv...
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WO/2020/180016A1 |
The present invention relates to an etching composition for a silicon nitride film, comprising an organic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention has an effect of selectively rem...
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WO/2020/166677A1 |
Provided is, inter alia, a processing solution for semiconductor wafers for use in a semiconductor formation process. Provided is, inter alia, a processing solution that contains (A) hypochlorite ions and (B) an alkylammonium salt repres...
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WO/2020/158610A1 |
The present invention provides an etching liquid which is useful for a resin composition and the like, said resin composition containing an alkali-insoluble resin, 20-40% by mass of an organic filler and 30-50% by mass of an inorganic fi...
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WO/2020/157229A1 |
The present invention relates to a device and method for treating wafers. According to the invention, the wafers are transported in vertical alignment through the process solution used for treating the wafers, as a result of which it is ...
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WO/2020/159771A1 |
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing titanium nitride (TiN) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer. The present di...
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WO/2020/141714A1 |
The present invention relates to a method for manufacturing an aluminum alloy anodized film having a superhydrophobic surface and an aluminum alloy having an anodized film with a superhydrophobic surface manufactured by the method. The p...
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WO/2020/123126A1 |
The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water,...
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WO/2020/122454A1 |
The present invention relates to a highly selective etchant for a semiconductor and, more specifically, to a highly selective etchant for a semiconductor, comprising: an inorganic acid; a silane-based modifier; and a sulfur-based aid. In...
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WO/2020/121248A1 |
Compositions including one or more fluorochemical surfactants of the formula: (I) where Rf is a perfluoroalkyl group, each of R1, R2 and R3 are C1-C20 alkyl, alkoxy, or aryl; and R4 is alkylene, arylene of a combination thereof. R4 is pr...
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WO/2020/117325A1 |
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
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WO/2020/097778A1 |
Embodiments of compositions of a wet etchant and additive thereto for selectively etching silicon nitride to silicon oxide are disclosed. In an example, a composition of an additive to a phosphoric acid etchant includes an inhibitor and ...
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WO/2020/102228A1 |
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the...
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WO/2020/085447A1 |
The present invention relates to an etchant for resin compositions each comprising an alkali-insoluble resin and 50-80 mass% inorganic filler, the etchant being characterized by including 15-45 mass% alkali metal hydroxide as a first ing...
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WO/2020/040386A1 |
An insulating film etchant composition of embodiments of the present invention comprises: phosphoric acid; a first silane compound including a silane compound having passivation groups substituted for two or more alkyl groups inclusive o...
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WO/2020/040385A1 |
An insulation film etchant composition according to embodiments of the present invention comprises a phosphoric acid, a silane compound having a C1-C4 hydroxyalkoxy group, and the remainder of water. It is possible to effectively passiva...
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WO/2020/017723A1 |
Insulating film etchant compositions according to embodiments of the present invention comprise a phosphoric acid, a silane compound having a hydroxyalkyl group or an equivalent thereof, and extra water. The present invention can passiva...
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WO/2020/013485A1 |
Provided are a composition for etching a silicon nitride film and a method for etching a silicon nitride film by using same, the composition comprising: an inorganic acid or a salt thereof; water; a compound of chemical formula 1; a comp...
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WO/2020/009793A1 |
A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluori...
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WO/2019/225856A1 |
Disclosed are a composition for etching a silicon nitride film, the composition comprising: a phosphoric acid compound; water; and one or more of a certain silane-based compound and a reaction product thereof, and an etching method using...
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WO/2019/204556A1 |
A treatment solution and method for removing heavy metal contaminants and oxyanion contaminants from an aqueous solution by promoting the affinity of precipitating the contaminants. The method adjusts the pH and the ORP of the contaminat...
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WO/2019/198935A1 |
The silicon nitride film etching composition of the present invention comprises a phosphoric acid compound, a polyhydric alcohol, and water. The silicon nitride film etching composition has high selectivity to a silicon nitride film rela...
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WO/2019/199922A1 |
Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride f...
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WO/2019/182277A1 |
Disclosed is an etchant composition for a silicon nitride film, comprising: one or more compounds selected from the group consisting of a silyl phosphine oxide-based compound and a silyl phosphine-based compound which are represented by ...
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WO/2019/136398A1 |
Provided are methods using and making functionalized silicon membranes, such as, for example, functionalized silicon nanomembranes. The methods may combine one or more (e.g., two) surface modification processes (e.g., using a combination...
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WO/2019/087587A1 |
A treatment device 1 has: a treatment tank 2; an electrolytic cell 6 comprising a diamond electrode continuing on from a pipe 4 comprising a circulation pump 5; and a pipe 7 supplying from this electrolytic cell 6 to the treatment tank 2...
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WO/2019/087588A1 |
A treatment device 1 having: a treatment tank 2; an electrolytic cell 6 comprising a diamond electrode continuing on from a pipe 4 comprising a circulation pump 5; and a pipe 7 supplying from this electrolytic cell 6 to the treatment tan...
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WO/2019/083643A1 |
A composition effective for removing contaminates from an electronic device either as a concentrated material or when diluted with water. The composition designed for effective removal of undesirable contaminates from an electronic devic...
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WO/2019/079547A1 |
The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tantalum (Ta) and/or tantalum nitride (TaN) from a semiconductor substrate as an intermediate step in a multistep semiconductor ma...
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WO/2019/067836A1 |
Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammo...
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WO/2019/052598A1 |
The invention relates to a method by means of which surfaces of metal oxides that can be chemically reduced are reduced such that a subsequently applied metal film has increased adhesion. The method according to the invention comprises a...
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WO/2019/051053A1 |
Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionall...
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WO/2019/024328A1 |
An etching solution for an IGZO film layer and an etching method therefor; the etching solution comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution does not exceed 5, and the solution may...
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WO/2019/013706A1 |
A method of texturing photovoltaic silicon wafers There is provided a method of texturing photovoltaic (PV) silicon wafers comprising preparing an acid bath and etching a surface of a PV silicon wafer in the acid bath at a pre-determined...
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WO/2019/012417A1 |
Methods and systems for removing water from a manganese-based etchant bath are disclosed. Water is removed from the manganese-based etchant bath by transferring a portion of the manganese-based etchant bath to a vacuum evaporator for pro...
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WO/2018/226513A1 |
Methods of etching of glass articles are disclosed that provide display glass articles with low haze. A specific method etching an aluminosilicate glass article comprising at least one of barium oxide and magnesium oxide in a range of fr...
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WO/2018/182307A1 |
The present invention relates to a silicon nitride film etching composition, which can minimize the etching rate to a silicon oxide film, can selectively etch a silicon nitride film, leaves no particles on a substrate, and is stable at a...
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WO/2018/182996A1 |
A textured glass article that includes: a glass substrate comprising a thickness, a primary surface and a bulk composition at the midpoint of the thickness; and a textured region defined by the primary surface and comprising a textured r...
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WO/2018/182968A1 |
Methods and apparatus for etching a feature in a substrate are provided. The feature may be etched in dielectric material, which may or may not be provided in a stack of materials. The substrate may be etched using cryogenic temperatures...
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WO/2018/156775A1 |
The conventional Li-ion batteries use graphite anode, which has a theoretical specific capacity of 372 mAh/g, which limits their application for high capacity energy storage devices. Silicon has been tried because of its high theoretical...
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WO/2018/144577A1 |
A method of manufacturing a glass article includes application of an etch cream to an edge surface of the article. Application of the etch cream can reduce a density of particles on the edge surface to less than about 200 per 0.1 square ...
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WO/2018/144527A1 |
A method of manufacturing a glass article includes application of an etch solution to an edge surface of the article. Application of the etch solution can reduce a density of particles on the edge surface to less than about 200 per 0.1 s...
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WO/2018/136466A1 |
The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop lay...
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