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WO/2023/188577A1 |
Provided are a semiconductor device and a power conversion device with which the p-body layer area of a diode portion of an RC-IGBT can be reduced, hole injection can be suppressed, and the recovery characteristic can be improved. This...
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WO/2023/184351A1 |
Embodiments of the present disclosure provide a metal oxide thin film transistor. The metal oxide thin film transistor comprises a metal oxide semiconductor layer (102) arranged on a base substrate (101), and a source electrode (103) and...
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WO/2023/188867A1 |
This semiconductor device comprises: a chip having a main surface; a pn joint that extends in the horizontal direction along the main surface inside the chip; a trench insulation structure that is formed on the main surface so as to pene...
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WO/2023/188818A1 |
The present invention provides a vibration element having a structure which can efficiently convert an electric field into a magnetic field or vice versa. The vibration element according to the present technology comprises a vibration ...
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WO/2023/191435A1 |
Disclosed are a power semiconductor device having reduced loss, and a method for manufacturing same. The power semiconductor device comprises: a first drift region of a first conductivity type; a second drift region of the first conducti...
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WO/2023/189493A1 |
This semiconductor device that can realize a highly reliable high-mobility semiconductor device, comprises: a metal oxide layer disposed on a substrate and having aluminum as a main component; an oxide semiconductor layer disposed on the...
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WO/2023/184914A1 |
Provided in the embodiments of the present application are an MOS transistor, a memory and a manufacturing method therefor. In the MOS transistor provided by the embodiments of the present application, a source structure, a metal oxide s...
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WO/2023/184587A1 |
Disclosed in the present application are an array substrate and a display panel. The array substrate comprises a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer and a source/drain metal layer, wherein a...
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WO/2023/189489A1 |
This semiconductor device includes a substrate, an insulating layer over the substrate, a metal oxide layer over the insulating layer, and an oxide semiconductor layer over the metal oxide layer. The insulating layer includes a first reg...
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WO/2023/189004A1 |
This oxide semiconductor film has crystalline properties and is provided on a substrate, the oxide semiconductor film including an indium (In) element, and a first metal (M1) element selected from the group consisting of an aluminum (Al)...
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WO/2023/189057A1 |
A semiconductor device (1A) comprises: a chip (2) that comprises a SiC single crystal and has a major surface (3); a trench structure (20) that includes a first sidewall (22A) extending in an a-axis direction of the SiC single crystal an...
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WO/2023/184129A1 |
A semiconductor device includes a first and a second nitride-based semiconductor layers and a gate structure. The gate structure includes an outer spacer, an inner spacer and a gate electrode. The outer spacer has at least two opposite i...
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WO/2023/189059A1 |
This semiconductor device includes: a chip having a first main surface on one side and a second main surface on another side; an IGBT region provided to an inner portion of the first main surface; an outer peripheral region provided to a...
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WO/2023/189161A1 |
This semiconductor device comprises: a chip having a main surface; a trench that demarks a first region on one side and a second region on the other side in the chip in a cross-sectional view; a plurality of trench insulating structures ...
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WO/2023/184812A1 |
Disclosed in the present invention are a heterojunction-based high-power-density tunneling semiconductor device and a manufacturing process therefor. A cell structure of the device comprises: an N+ substrate, wherein a drain metal is arr...
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WO/2023/188971A1 |
A semiconductor device (1) for power amplification comprises: a substrate (10); a lower surface electrode (64); a semiconductor layer (20); a source electrode (60); a drain electrode (50); a gate electrode (40); and a field plate (80). T...
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WO/2023/184622A1 |
A display panel and a display apparatus. The display panel comprises a substrate (10) and a thin film transistor layer (20) arranged on the substrate (10). The thin film transistor layer (20) comprises an active layer (21) and a metal la...
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WO/2023/184571A1 |
The present invention relates to a semiconductor structure and a preparation method therefor. The preparation method for the semiconductor structure comprises: providing a substrate, the substrate comprising an array region and a periphe...
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WO/2023/189048A1 |
This nitride semiconductor device comprises: an electron transit layer; an electron supply layer that is formed on the electron transit layer and that has a band gap which is larger than that of the electron transit layer; a dielectric l...
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WO/2023/189054A1 |
A semiconductor device including: a chip having a major surface; a gate resistor including a trench resistive structure formed on the major surface; a gate pad having a lower resistance value than the trench resistive structure and dispo...
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WO/2023/184927A1 |
Provided in the embodiments of the present application are a field-effect transistor, a memory and a preparation method therefor, a semiconductor array, and a transistor. The field-effect transistor comprises a stacked structure and two ...
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WO/2023/189060A1 |
This SiC semiconductor device (1A) contains: a chip (2) which contains an SiC monocrystal and has a main surface (3); a trench structure (20) which has side walls (21, 22) and a bottom wall (23) and is formed in the main surface; and a f...
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WO/2023/189505A1 |
A semiconductor device (1) includes: a chip (9) having a main surface (10); a trench insulating structure (17) formed in the main surface; a gate insulating film (28) covering the main surface so as to connect to the trench insulating st...
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WO/2023/189506A1 |
This semiconductor device includes: a semiconductor chip that has a first main surface and a second main surface which is on the opposite side of the first main surface; an insulating gate-type first transistor which is formed on the sem...
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WO/2023/189549A1 |
In this method for producing a semiconductor device, a metal oxide layer mainly composed of aluminum is formed on an insulating surface, the surface of the metal oxide layer is subjected to planarization, an oxide semiconductor layer is ...
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WO/2023/189055A1 |
This semiconductor apparatus comprises: a chip that has a first main surface as a device surface and a second main surface as a non-device surface; and a drift slope region of a first conductivity type that is formed in the chip and has ...
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WO/2023/184231A1 |
The present disclosure relates to the technical field of display, and provides a metal oxide thin film transistor, a semiconductor device, and a display apparatus, capable of solving the problem of poor stability of existing metal oxide ...
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WO/2023/187543A1 |
The present invention provides a display device less susceptible to noise. This display device comprises a signal line drive circuit, a demultiplexer circuit, and pixels. The demultiplexer circuit has a transistor in which a semiconducto...
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WO/2023/187544A1 |
A semiconductor device with high recording density is adopted. The device has first and second transistors, first and second conductors, and first through third insulators. In the first transistor, a semiconductor layer is located above ...
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WO/2023/189754A1 |
This semiconductor device comprises: a chip having a first surface on one side and a second surface on the other side; a plurality of IGBT regions provided on the chip so as to be spaced apart from each other; a boundary region provided ...
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WO/2023/189082A1 |
A semiconductor device (100) in which a gate electrode (140) includes a junction portion (141) forming a Schottky junction with a barrier layer (104), and a protruding portion (142d) protruding further than the junction portion (141). An...
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WO/2023/189674A1 |
Provided is a resonant-tunneling diode and a terahertz oscillator enabling further performance improvement. The resonant-tunneling diode comprises: a multiple quantum well structure composed of a group III nitride semiconductor; a first ...
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WO/2023/189058A1 |
A SiC Semiconductor device (1A) includes: a chip (2) that contains a SiC single crystal and has a principal surface (3); a trench structure (20) that is formed on the principal surface and that has a first side wall (22A) extending in an...
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WO/2023/189003A1 |
A thin film transistor according to the present invention comprises a substrate, an oxide semiconductor layer which is provided on the substrate and has crystallinity, a gate electrode which is superposed on the oxide semiconductor layer...
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WO/2023/184199A1 |
A nitride-based semiconductor device includes III-V nitride-based buffer layer, a first III-V nitride-based semiconductor layer, and second III-V nitride-based semiconductor layer. The III-V nitride-based buffer layer is disposed over a ...
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WO/2023/189834A1 |
Provided is a spattering target (1) comprising an oxide sintered compact including an In element, a Ga element, and an O element. Said sintered compact includes a crystal structure represented by In2O3, the atomic composition ratio of th...
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WO/2023/189039A1 |
This nitride semiconductor device (10) comprises: an electron transit layer (16); an electron supply layer (18) provided on the electron transit layer (16); a gate layer (22) provided on the electron supply layer (18); a gate electrode (...
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WO/2023/186498A1 |
The invention relates to a composite structure for manufacturing microelectronic components, comprising a monocrystalline thin film disposed on a polycrystalline silicon carbide support substrate, said support substrate having a preferre...
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WO/2023/188559A1 |
Provided are: a semiconductor device with which it is possible to form a Schottky barrier diode in a diode unit of a RC-IGBT and to perform low injection of the diode unit by a simpler process than conventional; a method for manufacturin...
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WO/2023/189014A1 |
Provided is a semiconductor film comprising a solid-phase crystallized product of an indium oxide doped with tin and hydrogen.
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WO/2023/181442A1 |
A treatment method of a power semiconductor module comprising at least one semiconductor element including a Metal-Oxide-Semiconductor element and/or a Metal-Insulator-Semiconductor element, said method comprising: a. acquiring a first v...
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WO/2023/178755A1 |
Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a forming method. The forming method comprises: providing a substrate (100); performing first oxidation treatment on a...
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WO/2023/178683A1 |
The present application relates to the technical field of semiconductors. Provided in the present application are a high electron mobility transistor, a Doherty power amplifier and an electronic device. The present application uses novel...
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WO/2023/182099A1 |
This field effect transistor has: a substrate having a (111) plane, the substrate comprising a group IV semiconductor doped with a first electroconductivity type; a core-shell nanowire including a core nanowire connected to the (111) pla...
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WO/2023/181588A1 |
[Problem] To lower the on-resistance of a junction barrier Schottky diode in which a gallium oxide is used. [Solution] A junction barrier Schottky diode 1 comprises: a semiconductor substrate 20 and a drift layer 30 that are formed from ...
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WO/2023/181998A1 |
This method for manufacturing a hall element 18 comprises: a step for forming a perovskite-type magnetic layer 14 on a substrate 12 comprising a compound that has a perovskite structure and a lattice constant of 3.90-3.97 Å in pseudo-cu...
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WO/2023/179411A1 |
The present application relates to the technical field of semiconductors. Provided are a semiconductor device and a preparation method therefor, and an electronic device, which are used for solving the problem of semiconductor device sur...
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WO/2023/178684A1 |
Embodiments of the present application provide a gallium nitride field effect transistor structure and a preparation method. The complementary field effect transistor structure comprises: a substrate; a first epitaxial structure disposed...
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WO/2023/181587A1 |
[Problem] To increase the surge resistance of a junction barrier Schottky diode in which a gallium oxide is used. [Solution] A junction barrier Schottky diode 1 comprises: a semiconductor substrate 20 and a drift layer 30 that are formed...
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WO/2023/181460A1 |
A method for producing a semiconductor device (1), said method involving: a step for forming a first groove (71) of a depth H in a semiconductor layer (40); a step for filling the first groove (71) with an oxide film, and forming a surfa...
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