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WO/2023/162294A1 |
This semiconductor device comprises: a MOSFET 1Q; and a cutoff function circuit for detecting overcurrent flowing through the MOSFET 1Q and limiting the overcurrent. The cutoff function circuit includes MOSFETs 2Q and 3Q, a resistive ele...
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WO/2023/162036A1 |
According to the present invention, a dynamic flash memory cell and a fin transistor are formed on a P-layer substrate 10a. The dynamic flash memory cell comprises, on the P-layer substrate 10a: a first insulating layer 11a; a fin P-laye...
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WO/2023/161384A1 |
An integrated circuit (IC) device comprises a lateral bipolar junction transistor (BJT) comprising an emitter region formed in a base well and a heavily doped collector region separated in a lateral direction from the base well by a drif...
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WO/2023/163743A1 |
Embodiments of the disclosure provide methods and electronic devices comprising a work function layer comprising a material that does not form a silicide. The electronic devices comprise a silicon layer with the work function layer there...
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WO/2023/161389A1 |
An integrated circuit device comprises a lateral bipolar junction transistor comprising an emitter region formed in a base well and a heavily doped collector region separated in a lateral direction from the base well by a drift region do...
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WO/2023/162039A1 |
A first insulating layer 1 is provided on a substrate 50. A first metal wiring layer 2 is embedded in the insulating layer. A second metal wiring layer 3 is in contact with the metal wiring layer 2 and extends in a direction perpendicula...
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WO/2023/162521A1 |
A nitride semiconductor device 1 comprises: a SiC substrate 2 having a first main surface 2a and a second main surface 2b opposite thereto; a low-resistance SiC layer 3 formed on the first main surface 2a and having a lower resistivity t...
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WO/2023/162121A1 |
This magnetized rotary element comprises: spin-orbit torque wiring; and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a topological insulator in which conductors are ...
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WO/2023/164112A1 |
In an example, a device (200) includes a semiconductor substrate (216) having a top surface (205). The device (200) also includes a P-doped well (210) formed in the semiconductor substrate (216) and extending downwardly from the top surf...
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WO/2023/163167A1 |
Provided are a single crystal thin film of a compound having a flat rock salt-type structure, and a production method therefor. A single crystal thin film according to the present invention comprises a single crystal thin film of a compo...
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WO/2023/163235A1 |
A semiconductor element (1) is provided with: a semiconductor layer (21) which has at least one MESA structure; a field plate (61) which is arranged so as to cover at least a part of the semiconductor layer (21); and an insulating film (...
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WO/2023/163744A1 |
Embodiments of the disclosure provide methods and electronic devices comprising a work function layer comprising a material that forms a weak silicide. The electronic devices comprise a silicon layer with the work function layer thereon ...
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WO/2023/163002A1 |
Provided is a composition capable of selectively removing silicon while suppressing damage to silicon oxide. This composition contains: a quaternary ammonium compound; and at least one cationic surfactant selected from the group consisti...
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WO/2023/162735A1 |
A semiconductor device (1) is a vertical field effect transistor (10) including: a first gate trench (17) extending in a first direction and a second gate trench (27) formed deeper than the first gate trench (17); a first gate insulating...
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WO/2023/161755A1 |
Provided is a storage device that includes a novel semiconductor device. The storage device comprises: a memory cell that includes a transistor and a capacitive element; and a conductor. The transistor includes one of a source electrode ...
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WO/2023/161757A1 |
Provided is a semiconductor device that enables miniaturization and high integration. The semiconductor device has: a first transistor that includes a first conductor, a first insulator, a first metal oxide, a second insulator, and a sec...
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WO/2023/159662A1 |
The present application discloses a display panel and a manufacturing method therefor. The display panel comprises a transistor layer, which comprises an oxide active layer and a first photocatalytic layer that are stacked. The materials...
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WO/2023/161133A1 |
A semiconductor device including a first spacer located on top of a substrate, where the first spacer has a first width in a first axis of a nanodevice. At least one fin located on top of the first spacer, where the at least one fin has ...
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WO/2023/161760A1 |
Provided is a stacked field-effect transistor (FET). The stacked FET comprises a top active region. The width of the top of the top active region is smaller than the width of bottom of the top active region. The stacked FET further compr...
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WO/2023/159894A1 |
Embodiments of the present application provide a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a substrate; an epitaxial layer located on one side of the substrate, a doped region being for...
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WO/2023/159589A1 |
Embodiments of the present application relate to the technical field of semiconductors, and provide a chip and a manufacturing method therefor, a radio frequency power amplifier and a terminal, capable of ensuring that an epitaxial layer...
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WO/2023/161385A1 |
An integrated circuit device comprises at least one low voltage active semiconductor device formed a semiconductor substrate, and a depletion field effect potential divider (DFE-PD) formed above a major surface of the semiconductor subst...
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WO/2023/161386A1 |
An integrated circuit device comprises at least one low voltage active semiconductor device formed in a first substrate region of a semiconductor substrate, and a depletion field effect potential divider (DFE-PD) formed in a second subst...
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WO/2023/159578A1 |
Embodiments of the present application relate to the technical field of semiconductors, provide a semiconductor structure and an operating method thereof, a power amplification circuit, and an electronic device, and are used for improvin...
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WO/2023/160084A1 |
A manufacturing method for a P-type laterally diffused metal oxide semiconductor device, comprising: forming a N-type buried layer (220) in a substrate (210), forming a P-type region (230) located on the N-type buried layer (220), and fo...
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WO/2023/161387A1 |
An integrated circuit (IC) device comprises a metal-oxide-semiconductor (MOS) transistor comprising a heavily doped (HD) drain region, a gate stack, a drain region extension extending in a lateral direction from the HD drain region to an...
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WO/2023/162927A1 |
A storage device (1) according to one embodiment of the present disclosure is provided with: a storage element and a reference element each including a fixation layer having a fixed magnetization direction, a storage layer having a chang...
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WO/2023/161360A1 |
The present inventive concept relates to a spin qubit transistor (100) comprising a base layer (102), a first qubit comprising, a first computing semiconductor island (106) and a first readout semiconductor island (108) arranged with a d...
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WO/2023/159405A1 |
Provided are a circuit board and a manufacturing method therefor, a functional backplane, a backlight module, a display device, and a display panel. The circuit board comprises: a base substrate; a trace, which is provided on the base su...
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WO/2023/159681A1 |
Disclosed in the present application is a thin film transistor, comprising a flexible substrate, a shielding layer, a buffer layer and an active layer, wherein the shielding layer and the buffer layer are arranged between the flexible su...
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WO/2023/163697A1 |
The present disclosure provides a terahertz (THz) transceiver including a triple-barrier resonant tunneling diode (TBRTD), a resonator antenna electrically connected to an emitter and a collector of the TBRTD, and a radiator antenna disp...
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WO/2023/164071A1 |
A device includes a substrate, a heterostructure supported by the substrate, the heterostructure including a semiconductor layer supported by the substrate, and a ferroelectric III-nitride alloy layer supported by the semiconductor layer...
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WO/2023/161388A1 |
An integrated circuit device comprises a metal-oxide-semiconductor (MOS) transistor comprising a gate stack formed over a channel region thereof and a bipolar junction transistor (BJT) comprising a layer stack formed over a collector reg...
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WO/2023/162849A1 |
The present invention provides a sputtering target which is configured from an oxide sintered body that contains an oxide of the formula below containing indium, magnesium and tin. In the formula, X is 0.32 to 0.65; Y is 0.17 to 0.46; Z ...
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WO/2023/163745A1 |
Embodiments of the disclosure provide methods and electronic devices comprising a work function layer comprising a material that forms a conductive oxide with or without titanium. The electronic devices comprise a silicon layer with the ...
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WO/2023/156866A1 |
Provided is a storage device that enables miniaturization and high integration. The storage device has a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. The first capacitor has a firs...
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WO/2023/156998A1 |
The technology disclosed herein concerns a process for fabricating devices with Graphene Nanogap Electrodes (GNE).
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WO/2023/156869A1 |
The present invention provides a semiconductor device which enables miniaturization or high integration. A semiconductor device according to the present invention comprises a first conductor, a second conductor, a first insulating body, ...
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WO/2023/157374A1 |
[Problem] To provide a laminate having a buffer layer on a group 13 element nitride single crystal, a channel layer having a thickness of 700 nm or less on the buffer layer, and a barrier layer on the channel layer, wherein decreases in ...
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WO/2023/156287A1 |
A semiconductor structure includes a semiconductor channel structure that has a body and a tip and a dielectric spacer adjacent to the tip. The tip is no less than 70% the thickness of the body.
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WO/2023/158690A1 |
Semiconductor devices and methods of manufacturing the same are described. The method includes forming distinct and separate bottom dielectric isolation layers underneath the source/drain and underneath the gate of a gate all around devi...
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WO/2023/155261A1 |
The present application discloses an array substrate and a display panel. The array substrate comprises a plurality of pixel units arranged in an array; each pixel unit comprises a thin film transistor; the thin film transistor comprises...
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WO/2023/155085A1 |
Disclosed are a semiconductor material, a light-emitting device, a display panel, and a display device. The semiconductor material comprises: at least two among an oxide of a first element, an oxide of a second element, an oxide of a thi...
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WO/2023/155091A1 |
A metal oxide thin film transistor, an array substrate, and a display device, relating to the technical field of display, and capable of solving the problem of poor stability of existing metal oxide thin film transistors. The metal oxide...
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WO/2023/157395A1 |
A semiconductor device according to the present invention comprises: a chip which has a main surface; an IGBT region which is formed in the main surface; a diode region which is formed in the main surface; an insulating film which is for...
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WO/2023/156263A1 |
There is provided a transistor comprising: a graphene layer structure provided on a non-metallic surface of a substrate, the graphene layer structure having an insulating cap; a source contact provided in contact with a first edge of the...
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WO/2023/158688A1 |
Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which comprise an integrated dipole region to meet reduced th...
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WO/2023/157422A1 |
This semiconductor device comprises: a chip having a main surface; a first conductivity-type base region formed on the surface layer part of the main surface; a trench gate structure formed on the main surface so as to penetrate through ...
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WO/2023/156876A1 |
The present invention provides a semiconductor device having a transistor of very small size. The semiconductor device comprises: a semiconductor layer; a first electrically conductive layer; a second electrically conductive layer; a thi...
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WO/2023/155584A1 |
The present invention relates to an insulated gate bipolar transistor, a manufacturing method, an electronic device, and a storage medium. The method comprises: providing a substrate, and sequentially providing an oxide layer and an epit...
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