| Document |
Document Title |
|
WO/2018/062403A1 |
A polishing liquid composition is provided which can improve polishing selectivity and suppress uneven polishing while securing high polishing speeds. This invention relates to a polishing liquid composition which contains cerium oxide p...
|
|
WO/2018/055985A1 |
[Problem] To provide a polishing composition with which it is possible to effectively improve the polishing rate of an object to be polished. [Solution] A polishing composition containing abrasive grains, a polishing accelerator having a...
|
|
WO/2018/056122A1 |
Provided is a slurry containing abrasive particles, glycol, and water, wherein the average particle size of the abrasive particles is 120 nm or less, and the pH of the slurry is at least 4.0 and less than 8.0. Also provided is a polishin...
|
|
WO/2018/052816A1 |
Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) of substrates. In one embodiment, a carrier head for a CMP apparatus is disclosed herein. The carrier head includes a body, a retaining ring, a...
|
|
WO/2018/052133A1 |
The present invention is a polishing pad or the like, which comprises a pad main body that is formed of a polymer body containing a polyurethane resin and cerium oxide particles. The pad main body is a part that constitutes a polishing s...
|
|
WO/2018/050068A1 |
Disclosed is a pressure loading film (100). The pressure loading film (100) comprises: a film body (10), the film body (10) comprising a plurality of mutually isolated sub-cavities (30), the sub-cavities (30) being used for injecting a p...
|
|
WO/2018/053023A1 |
During polishing of a substrate a first signal is received from a first in-situ monitoring system and a second signal is received from a second in-situ monitoring system. A clearance time at which a conductive layer is cleared and a top ...
|
|
WO/2018/050069A1 |
A chemical mechanical polishing system comprises: a front-end module (101), used to store and/or test a wafer; a plurality of polishing units (102, 103, 104, 105), disposed side by side and at least one thereof being adjacent to the fron...
|
|
WO/2018/043504A1 |
Provided is a polishing composition which is effective for reducing surface defects. A polishing composition according to the present invention contains abrasive grains, a water-soluble polymer and a basic compound. The water-soluble pol...
|
|
WO/2018/045039A1 |
A polishing system includes a platen having a top surface, an annular polishing pad supported on the platen, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure from which the carrier head is...
|
|
WO/2018/042761A1 |
Provided is a semiconductor wafer lapping method with which the occurrence of a ring-shaped pattern in a nanotopography map can be suppressed. The semiconductor wafer lapping method according to the present invention is characterized by ...
|
|
WO/2018/039537A1 |
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive b...
|
|
WO/2018/037878A1 |
The present invention is a polishing apparatus comprising: a surface plate to which a polishing cloth for polishing a wafer is attached; and a plurality of polishing heads that are rotatable while holding the wafer and are capable of pre...
|
|
WO/2018/034308A1 |
The present invention relates to a polishing method for polishing a substrate such as a wafer. The polishing method comprises: polishing a substrate (W) by pressing the substrate (W) against the surface of a polishing pad (3); changing t...
|
|
WO/2018/030254A1 |
Disclosed is a method for washing a substrate using a washing liquid containing at least any one of the following (A), (B) and (C) after chemical-mechanical planarization of the substrate: (A) a reducing agent having the ability to donat...
|
|
WO/2018/028846A1 |
The invention relates to a grinding disc for processing material surfaces, comprising a disc-shaped base body (3) which has a tool side (13) that can face towards a tool and a workpiece side (12) that can face towards a workpiece, and wh...
|
|
WO/2018/028849A1 |
The invention relates to a roughing disc for machining material surfaces, comprising a disc-like main body (3) with a tool side (13) that is able to face towards a tool and a workpiece side (12) that is able to face towards a workpiece, ...
|
|
WO/2018/029612A1 |
The present disclosure relates to lapping pads which include an abrading layer, wherein the abrading layer includes a working surface and a second surface opposite the working surface having a projected area Ap, and at least one cavity h...
|
|
WO/2018/025655A1 |
Provided is a liquid concentrate of a composition for rough-polishing silicon wafers, which, when being diluted, is able to deliver preferable polishing performance, and which exhibits excellent stability. The liquid concentrate of a com...
|
|
WO/2018/025656A1 |
The present invention provides a production method for a silicon wafer rough-polishing composition, said method being capable of simultaneously providing excellent stability and the advantage of a concentrated liquid, and enabling improv...
|
|
WO/2018/026075A1 |
The present embodiments provides a mechanism in which the thickness of a scanned wafer shape is calculated to determine a profile, and a calculated PV value and a set predictive PV value for each profile are used such that a delta correc...
|
|
WO/2018/025915A1 |
This polishing tool comprises a laminate plate that has a thermosetting resin layer and a thermoplastic resin layer, wherein the thermosetting resin layer includes an organic fiber aggregate, the thermoplastic resin layer does not includ...
|
|
WO/2018/020798A1 |
The present invention limits roll-off of the outer edge of wafers in double-sided polishing and reduces variation in flatness. Provided is a method for double-sided wafer polishing in which the wafers, which have been set inside the wafe...
|
|
WO/2018/020931A1 |
Abrasive grains according to the present invention are abrasive grains in which the surfaces thereof are coated with an additive and that are formed of inorganic abrasive particles having a positive zeta potential at pH 8 or lower. Also,...
|
|
WO/2018/022520A2 |
A retaining ring includes a generally annular body having an inner surface to constrain a substrate and a bottom surface, the bottom surface having a plurality of channels extending from an outer surface to the inner surface, and a plura...
|
|
WO/2018/021428A1 |
Provided is a polishing pad having a polishing surface which has a zeta potential of +0.1 mV or higher at pH 10.0. Preferably, also provided is a polishing pad that comprises a polyurethane including a tertiary amine. More preferably, th...
|
|
WO/2018/012468A1 |
Provided is a polishing body (LHA pad) which is used for polishing by a CMP method and which is capable of achieving stable polishing performance and uniformly polishing a workpiece. Also provided is a manufacturing for the polishing bod...
|
|
WO/2018/012173A1 |
The present invention provides a polishing composition which is capable of polishing an object to be polished, with high polishing speed, and few scratches (defects). This polishing composition includes silica of which the maximum peak h...
|
|
WO/2018/012174A1 |
The present invention provides a polishing composition which is capable of polishing an object to be polished, with high polishing speed, and few scratches (defects). The present invention relates to a polishing composition which include...
|
|
WO/2018/012176A1 |
The present invention provides a polishing composition which is capable of polishing an object to be polished, with high polishing speed, and few scratches (defects). This polishing composition includes silica of which the maximum peak t...
|
|
WO/2018/012097A1 |
An inner periphery-side cutoff part (X1), in which the polishing surface of an upper plate (12) inclines upwards towards the inner periphery part of the upper plate (12), and an inner periphery-side cutoff part (Y1), in which the polishi...
|
|
WO/2018/012175A1 |
The present invention provides a process for producing a polishing composition with which a work can be polished at a high polishing rate with few scratches (defects). The present invention relates to a process for producing a polishing ...
|
|
WO/2017/220888A1 |
The invention relates to sintered abrasive particles of which the chemical composition comprises the weight concentration ranges indicated in the table, to give a total of 100%.
|
|
WO/2017/222999A1 |
An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The...
|
|
WO/2017/221660A1 |
The present invention addresses the problem of providing a polishing liquid with which it is possible to give an object to be polished excellent in-plane uniformity. The present invention also addresses the problem of providing a chemica...
|
|
WO/2017/217278A1 |
The present invention provides a polishing pad which is a cured foam of a urethane resin composition containing (i) a base material that contains a urethane prepolymer (A) having an isocyanate group, said urethane prepolymer (A) being a ...
|
|
WO/2017/218921A1 |
In described examples, a chemical mechanical polishing (CMP) system (200) includes a platen (214), a conduit (202) having a heating segment (205) and a delivery outlet (212), and a heater (206) coupled to the heating segment (205) of the...
|
|
WO/2017/212971A1 |
This polishing liquid contains permanganate ions, a weak acid and a soluble salt of the weak acid. It is preferable that the pH of this polishing liquid before polishing is started is from 0.5 to 6.0 (inclusive) at 25°C. It is also pref...
|
|
WO/2017/213255A1 |
The present invention is a CMP polishing solution for polishing a substrate including at least a barrier metal, a metal film, and a silicon dioxide film, or a substrate including at least a barrier metal, a metal film, a silicon dioxide ...
|
|
WO/2017/212874A1 |
The present invention addresses the problem of providing: a polishing liquid that, when used for CMP, is not likely to cause flaws in a polished object; and a chemical mechanical polishing method. This polishing liquid is for use in chem...
|
|
WO/2017/213294A1 |
The present invention relates to an auxiliary apparatus, for a polishing device, comprising: an attaching/detaching means; a specimen grinding means; and a connecting means. Therefore, effects of an automatic polishing device can be obta...
|
|
WO/2017/208667A1 |
The present invention addresses the issue of providing a polishing liquid whereby abrasive grains in the polishing liquid are unlikely to agglomerate and, even when used in CMP, defects are less likely to occur in a polished surface. The...
|
|
WO/2017/209050A1 |
Provided is a polishing pad having a knit fabric configured from a warp and a weft, and a resin with which the knit fabric is impregnated, the polishing pad having a cross-section cut along the direction of the surface of the knit fabric...
|
|
WO/2017/204035A1 |
The invention provides a polishing solution that can obtain an excellent polishing rate when applied to CMP and is less likely to cause dishing of the surface to be polished, a method for producing a polishing solution, a polishing solut...
|
|
WO/2017/195460A1 |
The present invention is a template assembly sorting method comprising: a step for preparing template assemblies in which a template with a back pad for holding the back surface of a workpiece and a retainer ring located on the back pad ...
|
|
WO/2017/191671A1 |
Provided is a polishing composition capable of polishing a sapphire wafer at an excellent polishing rate. The polishing composition contains silica particles, a glycol ether compound, and water. The content of glycol ether compound in th...
|
|
WO/2017/187749A1 |
[Problem] To provide a means for improving the dispersibility of abrasive grains while maintaining the polishing performance, and to provide a means for improving the redispersibility of abrasive grains while maintaining the polishing pe...
|
|
WO/2017/187689A1 |
An abrasive material, a polishing composition, and a polishing method are provided with which it is possible to polish a surface of an alloy or metal oxide at a sufficient speed and to obtain a high-grade mirror surface. The abrasive mat...
|
|
WO/2017/183290A1 |
The present invention is a polishing material for synthetic quarts glass substrates which comprises abrasive grains and water, characterized in that the abrasive grains comprise ceria particles as base particles and, fixed to the surface...
|
|
WO/2017/183452A1 |
The present invention addresses the problem of providing a silica-based composite fine particle dispersion with which a silica film, a Si-wafer, or even a difficult to machine material can be polished at high speed while achieving high p...
|
