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WO/2018/159530A1 |
One objective of the present invention is to provide a polishing solution which is not likely to cause dishing and defects on a polished surface when applied to CMP of an object to be polished, said object containing a cobalt-containing ...
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WO/2018/155168A1 |
[Problem] To provide a method for polishing a silicon carbide substrate, with which it is possible to increase polishing speed even when using a polishing pad which normally cannot contribute to an increase in polishing speed. [Solution]...
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WO/2018/150856A1 |
[Problem] To provide a polishing composition having excellent performance of eliminating protrusions formed on the periphery of a hard laser mark. [Solution] A polishing composition comprising abrasive grains, a water-soluble polymer, a ...
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WO/2018/150945A1 |
Provided is a polishing composition which is used in a step upstream of a final polishing step for a silicon substrate, and which makes it possible to obtain a high-quality surface effectively after the final polishing step. According to...
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WO/2018/147074A1 |
Provided is a polishing liquid which is used to polish a surface-to-be-polished that contains a tungsten material, wherein: the polishing liquid contains abrasive grains, a polymer having cationic groups at terminals, an oxidizing agent,...
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WO/2018/147148A1 |
Provided are: a polishing composition which can achieve both of a high polishing rate and a reduced edge roll-off amount while reducing an abrasive grain content; and a polishing composition which can produce a polished surface having go...
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WO/2018/142516A1 |
Provided is a polishing fluid that contains: abrasive grains containing the hydroxide of a tetravalent metal element; a polyalkylene glycol; a polymer compound; a cationic polymer; and a liquid medium. The polymer compound has a first mo...
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WO/2018/142623A1 |
[Problem] To provide a high-quality polishing pad that satisfies a user's demand regarding recesses. [Solution] First, a tool (6) that has a projected shape conforming to the shape of a recess to be formed on the front surface of a polis...
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WO/2018/143530A1 |
The present invention relates to a carrier head for a chemical mechanical polishing device, including a contact flap. According to the present invention, the carrier head comprises: a base; a substrate accommodation member connected to t...
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WO/2018/139492A1 |
Provided are a processing medium which combines rust-preventive performance with metal-contamination-preventing performance, a processing composition, and a processing method. The processing medium according to the present invention cont...
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WO/2018/135878A1 |
Disclosed is a method for producing a polishing pad, the method comprising the steps of: providing a polishing layer; forming a first through-hole penetrating the polishing layer; providing a support layer facing the polishing layer; int...
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WO/2018/136694A1 |
A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more ...
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WO/2018/135585A1 |
[Problem] Provided is a method for efficiently producing a liquid dispersion containing irregular-shaped silica particles by inhibiting generation of unreacted materials such as oligomers which do not grow into desired silica particles. ...
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WO/2018/131868A1 |
An embodiment relates to a porous polyurethane polishing pad used in chemical mechanical planarization (CMP) of a semiconductor and a method for manufacturing same, wherein the polishing performance (polishing rate) of the porous polyure...
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WO/2018/131508A1 |
[Problem] To provide a polishing composition with which it is possible to use abrasive grains that do not cause defects and increase a mechanical friction effect to polish, at high speed, a substrate on which a coating film of silica or ...
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WO/2018/131341A1 |
A polishing composition including abrasive grains, a dispersion medium, and an additive, the polishing composition being for use in polishing an object to be polished, wherein the abrasive grains are surface modified, the additive is rep...
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WO/2018/124226A1 |
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, an inorganic alkali compound, polyglycerol, and a multi-chain polyoxy...
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WO/2018/123875A1 |
The present invention provides: a means for preventing sedimentation of abrasive grains while maintaining polishing performance; and a means for improving re-dispersibility of abrasive grains while maintaining polishing performance. The ...
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WO/2018/124017A1 |
Provided in one embodiment are cerium oxide abrasive grains with which it is possible to improve a polishing rate. The present disclosure, in one embodiment, pertains to cerium oxide abrasive grains to be used in an abrasive, wherein the...
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WO/2018/124013A1 |
In one embodiment, provided is a cerium oxide abrasive grain with which it is possible to improve the polishing rate. The present disclosure, in one embodiment, pertains to a cerium oxide abrasive grain used for an abrasive, wherein the ...
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WO/2018/124230A1 |
Provided is a polishing composition which enables the achievement of an excellent wafer shape, while maintaining an adequate polishing rate and surface smoothness. This polishing composition contains abrasive grains, a basic compound, an...
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WO/2018/124229A1 |
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, a basic compound, and polyglycerol. The mass ratio of silica to polyg...
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WO/2018/123351A1 |
The present invention provides a carrier for a dual-surface polishing device in which, in a dual-surface polishing device, one or more holding holes, which are disposed between upper and lower platens to which a polishing cloth is attach...
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WO/2018/116558A1 |
Provided are a method for polishing a silicon wafer and a method for manufacturing a silicon wafer which are capable of suppressing the occurrence of a step-shaped micro defect. This method for polishing a silicon wafer is characterized ...
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WO/2018/116521A1 |
A polishing liquid of the present invention comprises manganese oxide grindstone particles, permanganate ions, and a cellulose-based surfactant or a cationic surfactant, and has a pH of 5 to 11. The cellulose-based surfactant is preferab...
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WO/2018/116690A1 |
Provided is a single-wafer one-side polishing method for a silicon wafer with which the surface coarseness of a silicon wafer can be reduced and an increase in peripheral flatness can be suppressed more than previously. The single-wafer ...
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WO/2018/116122A1 |
A pad conditioner includes a carrier, at least one abrasive element, and a spacer. The carrier includes a surface with an exposed region and a plurality of mounting regions. The abrasive element is disposed on the mounting region of the ...
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WO/2018/116890A1 |
Provided is a polishing composition capable of attaining a high polishing rate. The polishing composition comprises abrasive silica grains, a pH regulator, and water. The affinity AV between the abrasive silica grains and the water is 0....
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WO/2018/105306A1 |
The present invention provides a double-side polishing device carrier for a double-side polishing device which performs double-side polishing of a semiconductor silicon wafer, wherein the double-side polishing device carrier is disposed ...
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WO/2018/096991A1 |
Provided is a polishing composition containing a cellulose derivative, the polishing composition being effective in giving polished surfaces having few defects. This application provides a polishing composition comprising abrasive grains...
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WO/2018/092630A1 |
The present invention addresses the problem of providing: a polishing pad that is long-lasting, has a high polish rate, and is capable of producing a high degree of flatness on polished articles; and a method for manufacturing the polish...
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WO/2018/088088A1 |
The present invention addresses the problem of providing a silica composite particle dispersion capable of polishing silica films, Si wafers, or difficult-to-machine materials at high speed and of achieving high surface precision at the ...
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WO/2018/086912A1 |
The invention relates to a method for two-sided polishing of a semiconductor wafer, wherein polishing cloths having a hardness at room temperature of at least 80° according to Shore A and having a compressibility at room temperature of ...
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WO/2018/088370A1 |
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. These abrasive particles have ...
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WO/2018/088371A1 |
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. The product of the abrasive pa...
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WO/2018/083931A1 |
The present invention provides a double side polishing method for semiconductor wafers, said method making it possible to suppress variance in polishing quality by corresponding to a polishing environmental change that occurred when perf...
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WO/2018/080797A1 |
The present invention relates to a retainer ring for chemical mechanical polishing (CMP). A method of manufacturing a retainer ring for CMP comprising steps of: preparing two or more of arc-shaped polishing parts comprising a non-thermop...
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WO/2018/079334A1 |
Provided is a fumed silica for chemical-mechanical polishing with which post-polishing scratches occurring on a surface of an object to be polished can be significantly reduced, and which is important for miniaturization and multi-layeri...
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WO/2018/080765A1 |
A structured abrasive article comprises a plurality of shaped abrasive composites disposed on and secured to a major surface of a backing. The shaped abrasive composites comprise magnetizable abrasive particles retained in an organic bin...
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WO/2018/079766A1 |
The purpose of the present invention is to provide a polishing roll capable of achieving, for example, three-dimensional polishing of a hard material such as sapphire glass at a high polishing rate. The present invention provides a cylin...
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WO/2018/074041A1 |
This surface property measuring device for a polishing pad measures surface properties, such as surface shape and surface state, of a polishing pad to be used for the purpose of polishing substrates, such as a semiconductor wafer. The su...
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WO/2018/075409A2 |
The invention provides a chemical-mechanical polishing composition containing abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula (I) wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein...
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WO/2018/074091A1 |
A local polishing system is provided with: a particle estimation unit (30) which estimates a film thickness distribution of a wafer; a local polishing region setting unit (11) which sets a local polishing region of the wafer on the basis...
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WO/2018/075260A1 |
An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by th...
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WO/2018/061656A1 |
The purpose of the present invention is to provide, in a method for producing a cationically modified silica which includes modifying a silica raw material using a silane coupling agent, a means for enabling suppression of the occurrence...
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WO/2018/062470A1 |
The present invention provides: a method for producing a semiconductor chip excellent in production yield; and a kit. The method for producing a semiconductor chip according to the present invention comprises: step 1 for forming an insul...
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WO/2018/059144A1 |
A CMP equipment polishing head wafer falling detection method and system. The method comprises: monitoring, in a vacuum wafer grabbing process and a wafer carrying and conveying process of a polishing head, the vacuum adsorption pressure...
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WO/2018/063242A1 |
A multi-step conditioning process includes an initial step of preparation (i.e., pre-conditioning) and a subsequent step of restoration (i.e., conditioning and polishing intermittently, in situ conditioning, or combinations thereof). An ...
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WO/2018/062401A1 |
A polishing liquid composition is provided which can improve polishing selectivity and suppress uneven polishing while securing high polishing speeds. This invention relates to a polishing liquid composition which contains cerium oxide p...
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WO/2018/064162A1 |
An apparatus for fabricating a polishing pad includes a conveyor belt, a casting station to form a layer of the polishing pad and to deliver the layer of the polishing pad onto the conveyor belt, a printing station including one or more ...
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