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WO/2022/238137A1 |
Assessment systems and methods are disclosed. In one arrangement, charged particles are directed in sub-beams arranged in a multi-beam towards a sample. A plurality of control electrodes define a control lens array. Each control lens in ...
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WO/2022/240390A1 |
A substrate support assembly includes a metal matrix composite (MMC) susceptor body configured to support a substrate in a processing chamber. The MMC susceptor body forms one or more channels configured to receive heat transfer fluid. T...
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WO/2022/240547A1 |
A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column,...
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WO/2022/240919A1 |
A system is provided for generating plasma within narrow diameter tubes, e.g., tubes with an inner diameter of less than 1 millimeter. The system may comprise the tube, a nozzle connected to at least one end of the tube configured to sup...
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WO/2022/238622A1 |
A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) bei...
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WO/2022/238621A1 |
A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) wi...
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WO/2022/240595A1 |
Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing le...
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WO/2022/240651A1 |
Embodiments of the present disclosure relate to a system for pulsed direct- current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a subst...
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WO/2022/240944A1 |
A semiconductor processing chamber for processing semiconductor substrates may include a pedestal to support a substrate with a heater zones and a wire mesh configured to deliver a Radio Frequency (RF) signal to a plasma. The chamber may...
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WO/2022/239646A1 |
A multi-electron beam image acquisition device according to an aspect of the present invention is characterized by comprising: a stage on which a substrate is mounted; an illumination optical system which uses a multi-primary electron be...
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WO/2022/240418A1 |
A substrate support assembly includes a cooling plate forming one or more channels configured to receive heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas...
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WO/2022/240704A1 |
Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substr...
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WO/2022/241196A1 |
A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit o...
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WO/2022/240998A1 |
An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, an...
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WO/2022/235399A1 |
A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to gener...
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WO/2022/234029A1 |
A method for treating the surface of a steel strip is provided where the method comprises the steps of providing a steel strip (5), plasma treatment of the steel strip by a magnetron plasma sputter unit (1); transferring of the plasma tr...
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WO/2022/235920A1 |
Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma pr...
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WO/2022/235327A1 |
A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion...
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WO/2022/235454A1 |
Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop ...
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WO/2022/233093A1 |
A microfocus field emission electron source based on a carbon nanotube, and a preparation method therefor. The method comprises the following steps: (1) applying a metal platinum layer onto the surface of a nickel substrate; (2) under th...
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WO/2022/233343A1 |
A method and a device for manufacturing a hydrophilic substrate are provided. The method includes introducing reaction gas into vacuum chamber; applying first voltage to the vacuum chamber, applying second voltage to sample carrier, and ...
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WO/2022/235544A1 |
Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system contr...
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WO/2022/232502A1 |
Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a firs...
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WO/2022/231783A1 |
The present disclosure may include a method for calibrating a capacitor in a matching network in a radio frequency plasma processing device, the method including. The method may include identifying the capacitor in the matching network, ...
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WO/2022/230488A1 |
Provided is: an electron gun that can lengthen the life of a photocathode; an electron beam applying device in which said electron gun is mounted; and an irradiation position shifting method.　The electron gun includes a light source, a...
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WO/2022/232410A1 |
Apparatus for treating water is provided where the apparatus includes a reaction chamber having an air-water interface and a plasma applicator disposed in air in proximity to the air-water interface. The plasma applicator includes a soli...
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WO/2022/231862A1 |
An integrated microcrystal electron diffraction system and method are provided that include an electron source, a sample assembly configured to retain a sample, a camera assembly, and a control system. The control system pre-screens the ...
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WO/2022/231922A1 |
An atmospheric plasma treatment station is integrated in a semiconductor process tool. The atmospheric plasma treatment station directly interfaces with a deposition chamber of the semiconductor process tool without adding to the footpri...
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WO/2022/231673A1 |
A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of th...
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WO/2022/230135A1 |
An electron beam irradiation device (1) radiates an electron beam from an electrode (12) that is connected to a tip of a conductive part (21) which projects inside a vacuum container (11), to the exterior of the vacuum container (11) via...
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WO/2022/231806A1 |
A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to...
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WO/2022/228778A1 |
The invention relates to a hollow cathode system for generating a plasma and to a method for operating such a hollow cathode system, in which an anode device (13), a power supply device (14) for providing an electrical voltage applied be...
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WO/2022/231272A1 |
An apparatus for treating an object to be treated may comprise: an accommodation member for accommodating the object to be treated; and an electrode member that is disposed on one side of the accommodation member and connected to an exte...
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WO/2022/228943A1 |
The present invention provides a charged particle assessment system comprising: a sample holder configured to hold a sample having a surface; a charged particle-optical device configured to project a charged particle beam towards the sam...
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WO/2022/228969A1 |
Method and corresponding device for plasma treating substrates (21) moving along a transport direction (5) through a treatment zone that is delimited in a direction transversal to said transport direction (5) by at least one wall (13) fo...
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WO/2022/230717A1 |
A charged particle optical system comprising: a permanent magnetic lens which, with respect to an optical axis direction of the charged particle optical system, is disposed on the object side of a central point between a charged particle...
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WO/2021/193346A9 |
The present invention relates to a scanning electron microscope for generating images of a workpiece such as a wafer, a mask, a panel, or a substrate by scanning the workpiece with an electron beam. The scanning electron microscope is pr...
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WO/2022/225808A1 |
A system to align a shadow ring on a substrate support includes a baseplate of the substrate support, an alignment recess defined within an upper surface of the baseplate, a shadow ring, an upper alignment groove defined in a lower surfa...
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WO/2022/225695A1 |
Exemplary semiconductor processing chamber showerheads include an inner core region. The inner core region may define a plurality of apertures. The showerheads may include an outer core region disposed about an outer periphery of the inn...
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WO/2022/225231A1 |
A magnetron sputter device of the present disclosure comprises: a chamber of which the inside is in a vacuum state; a gas supply pipe that supplies argon (Ar) gas into the chamber; a sputtering head that is provided inside the chamber an...
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WO/2022/223096A1 |
A sputter deposition source (200) for depositing a material on a substrate (10) is described. The sputter deposition source includes an array (210) of magnetron sputter cathodes arranged in a row for coating the substrate (10) in a depos...
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WO/2022/222098A1 |
Provided in the present invention are an ion implantation device and a mechanical arm. The mechanical arm comprises a first arm, a second arm, a third arm, a vertical arm and a wafer holder. Long axis directions of the first arm, the sec...
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WO/2022/226074A1 |
Techniques described herein relate to methods and apparatus for minimizing tin oxide chamber clean time. In many cases, the chamber is a deposition chamber used for depositing tin oxide on semiconductor substrates. The techniques involve...
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WO/2022/219814A1 |
A light source 7 for emitting pulse excitation light is provided with: a laser light source 24; a light distributor 103 for distributing a pulse laser beam emitted by the laser light source into a plurality of pulse laser beams; a phase ...
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WO/2022/218592A1 |
The invention refers to an apparatus to coat at least one threedimensional ( 3D) object (8,8' ), the apparatus comprising : a coating chamber (2,2' ); a vacuum pump (13) system (13) connected to the chamber by a vacuum port (28); a chamb...
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WO/2022/219667A1 |
The present invention relates to a defect inspection device that captures a mirror electron image. First, an objective lens parameter value that gives a predetermined defocus amount is determined from a plurality of mirror electron image...
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WO/2022/220576A1 |
Provided is an inductively coupled plasma etching apparatus comprising: a reaction chamber having an inner space to which a gas source is provided; an upper coil part for inducing an electric field into the inner space of the reaction ch...
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WO/2022/220918A1 |
A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned betw...
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WO/2022/221103A1 |
Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic top plate having a top surface with a processing region. One or mo...
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WO/2022/218634A1 |
Disclosed herein is a charged-particle apparatus configured to inspect a sample with a charged- particle beam. The charged-particle apparatus comprises a detector assembly or an array of multipole elements. The charged-particle apparatus...
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