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WO/2022/102909A1 |
Disclosed is a plasma etching method. The plasma etching method comprises: a first step for vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and pentafluoropropanol (PFP); a second step for supplying a discharge gas compris...
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WO/2022/100538A1 |
A plasma immersion ion implantation apparatus, comprising: a process chamber (1), wherein a base (2) is provided in the process chamber (1), the base (2) comprises a bearing surface for bearing a wafer, the body of the process chamber (1...
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WO/2022/104166A1 |
Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for...
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WO/2022/103467A1 |
Magnetic lens having two or more distinct and separate, detachable assemblies, at least one of the detachable assemblies having a core about which a solenoid is wound so that the solenoid need not be wound or unwound when the assemblies ...
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WO/2022/103765A1 |
An RF signal supply system for plasma generation includes an RF signal generator, an impedance matching system, and a control module. The RF signal generator includes a control system. The impedance matching system has an input connected...
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WO/2022/101072A1 |
Objective lens array assemblies and associated methods are disclosed. In one arrangement, the objective lens array assembly focuses a multi-beam of sub-beams on a sample. Planar elements define a plurality of apertures aligned along sub-...
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WO/2022/101957A1 |
The present invention automatically performs surface activation of a photocathode in a short amount of time with good reproducibility and without requiring any skill. To this end, an activation mechanism is provided in an activation regi...
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WO/2022/102140A1 |
According to the present invention, an input and output device comprises: an instruction analysis unit which generates a conversation manuscript in which conversation uttered by a user is converted into character string data, and recogni...
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WO/2022/103544A1 |
Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a su...
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WO/2022/103672A1 |
A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing cha...
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WO/2022/100857A1 |
A carrier transport system (100) for contactlessly transporting a carrier (10) along a track assembly is described. The carrier transport system includes a passive magnet arrangement (120) for generating a carrier levitation force (FL) c...
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WO/2022/103567A1 |
Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, where...
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WO/2022/099687A1 |
Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of ...
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WO/2022/103543A1 |
Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a su...
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WO/2022/095794A1 |
Disclosed in the present invention are a carrying device and a semiconductor reaction chamber. In the carrying device, a focusing ring assembly comprises: an upper focusing ring and a lower focusing ring; a groove is formed on the upper ...
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WO/2022/096144A1 |
The invention is directed to transferring alignment information from a first set of images to a second set of images. A first set of cross- section images taken at times Tai in a first imaging mode is obtained. A second set of cross-sect...
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WO/2022/098440A1 |
An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave...
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WO/2022/098567A1 |
A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprisi...
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WO/2022/097760A1 |
A plasma diagnosis system and a plasma diagnosis method are disclosed. The plasma diagnosis system according to an embodiment of the present invention may comprise: a first planar substrate on which at least a part of a plasma to be diag...
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WO/2022/098778A1 |
A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially o...
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WO/2022/090737A2 |
An apparatus and method for treating an effluent stream from a semiconductor processing tool are disclosed. The plasma abatement apparatus is for treating an effluent stream from a semiconductor processing tool, the plasma abatement appa...
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WO/2022/092616A1 |
The present invention relates to a plasma generating apparatus for secondary batteries, comprising: a transfer roller for transferring a separator; a plasma generating unit for forming, on a portion of a surface of the separator transfer...
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WO/2022/089475A1 |
Provided are a semiconductor manufacturing device and a Faraday cup thereof. The Faraday cup comprises a cup body (100) and a cup rim assembly (200), wherein the cup rim assembly (200) is arranged on a cup rim of the cup body (100); and ...
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WO/2022/093597A1 |
Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface faci...
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WO/2022/093974A1 |
A component for use in a plasma processing chamber system is provided. The component for use in a processing chamber system comprises a bulk component body comprising magnesium aluminum oxynitride and sintering aids. The sintering aids c...
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WO/2022/093404A1 |
An ion implantation system 101, ion source 108, and method are provided, where an ion source is configured to ionize an aluminum- based ion source material 113,132 and to form an ion beam 112 and a by-product including a non-conducting m...
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WO/2022/093753A1 |
A power system for a plasma processing system and associated methods are disclosed. The power system comprises a generator with a frequency-tuning subsystem, a match network coupled between the plasma processing chamber and the generator...
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WO/2022/093273A1 |
In plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. A toroid is provided with one or more wire windings around the toroid, the wire being couple...
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WO/2022/092077A1 |
The present invention overcomes a trade-off between throughput, SNR, and spatial resolution in a charged particle beam device. Accordingly, a computer (18) sets at least one of a charged particle optical system and a detection system so ...
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WO/2022/092386A1 |
The present invention provides a sensor device for diagnosing a semiconductor process, the sensor device comprising: a lower case in which a seating groove is formed; a circuit board which is arranged in the seating groove with a plurali...
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WO/2022/091475A1 |
Provided is a Wien filter in which discharge risk is reduced and which operates stably with excellent efficiency. A Wien filter according to an embodiment of the present invention comprises: a tubular yoke; a plurality of magnetic poles ...
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WO/2022/093551A1 |
Systems and methods for synchronization of radio frequency (RF) pulsing schemes and of sensor data collection are described. One of the methods includes receiving, by an RF generator, a first set of one or more variable levels and one or...
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WO/2022/093280A1 |
A confinement ring for use in a plasma processing chamber includes a lower horizontal section, a vertical section, and a upper horizontal section. The lower horizontal section extends between an inner lower radius and an outer radius of ...
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WO/2022/091860A1 |
This plasma processing device includes: a processing vessel inside which a substrate to be subjected to plasma processing is placed; a plasma generating unit for generating plasma in the processing vessel; a focusing unit which is dispos...
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WO/2022/092208A1 |
This membrane protein analysis substrate comprises: an electron microscope grid having a plurality of through holes; a lipid bilayer membrane provided covering at least one of the plurality of through holes; and a membrane protein retain...
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WO/2022/094381A1 |
An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a...
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WO/2022/089320A1 |
Provided are a wafer carrying mechanism and a semiconductor process apparatus. The wafer carrying mechanism is used for the semiconductor process apparatus and comprises a mounting support, a carrying plate, a heater, a cooling structure...
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WO/2022/091234A1 |
The purpose of the present invention is to resolve a trade-off among throughput, SNR, and spatial resolution in a charged particle beam device. For this purpose, a computer 18 sets a charged particle optical system or a detection system ...
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WO/2022/088682A1 |
The present application relates to the technical field of semiconductor manufacturing, and provides a disassembling and assembling device for a gas distribution plate of an etching machine, and the etching machine for solving the problem...
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WO/2022/085990A1 |
The present invention relates to a substrate treatment apparatus comprising: a process chamber; a first electrode positioned in the upper part of the process chamber; a second electrode positioned below the first electrode and including ...
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WO/2022/087004A1 |
Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater emb...
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WO/2022/085309A1 |
[Problem] To provide a focused energy beam device having high inspection accuracy and processing accuracy by increasing the degree of vacuum in a processing space through which an energy beam passes. [Solution] A focused energy beam devi...
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WO/2022/087365A1 |
Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence o...
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WO/2022/082991A1 |
A high-resolution in-situ suspension-type temperature difference and voltage applying chip for a transmission electron microscope and a preparation method therefor. The chip comprises a substrate (1) with two faces covered with insulatin...
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WO/2022/086638A1 |
An electrostatic chuck is provided. In one example, the electrostatic chuck includes a base plate, a bond layer disposed over the base plate, a ceramic plate, and a heater. The ceramic plate includes a bottom surface disposed over the bo...
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WO/2022/087145A1 |
Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may defin...
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WO/2022/086827A1 |
A method reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. The method includes providing initial chucking voltages to each of the two electrodes, ...
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WO/2022/086788A1 |
Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a...
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WO/2022/087573A1 |
Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includ...
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WO/2022/086869A1 |
Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends ...
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