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WO/2022/122320A1 |
A charged particle apparatus comprising a charged particle source (401) and a first deflector (421) configured to deflect the charged- particle beam to land on a surface of a sample at a beam-tilt angle, wherein the first deflector is lo...
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WO/2022/125469A1 |
Ways of detecting individual photons or charged particles with two-dimensional spatial and single-digit picosecond timing accuracy are disclosed. The embodiments are applicable to photons of energies capable of producing photoelectrons, ...
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WO/2022/123821A1 |
The present invention makes it possible to obtain an ion beam having a relatively long pulse width. A laser ion source (20) comprises: a laser oscillator (201) that outputs a laser beam (LB); a target (205) that generates plasma (PL) by ...
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WO/2022/125231A1 |
A system having the low frequency RF generator is described. The low frequency RF has an operating frequency range between 10 kilohertz (kHz) and 330 kHz. The low frequency RF generator generates an RF signal. The system further includes...
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WO/2022/122095A1 |
The invention relates to a diaphragm assembly of an aperture diaphragm for delimiting the coating region which is operative in the deposition of a layer and to a sputtering device which uses the diaphragm assembly. The diaphragm assembly...
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WO/2022/122322A1 |
A charged particle beam apparatus for directing a charged particle beam to preselected locations of a sample surface is provided. The charged particle beam has a field of view of the sample surface. A charged-particle-optical arrangement...
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WO/2022/124604A1 |
A method for etching a silicon-containing film according to the present invention comprises the steps of: introducing a substrate comprising a first silicon-containing film and a second silicon-containing film into a process chamber of a...
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WO/2022/125745A1 |
A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetic...
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WO/2022/123780A1 |
One aspect of this control method involves: using an optical microscope to vary the positional relationship in the vertical direction between an object and the focal position of the optical microscope and capture a plurality of images of...
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WO/2022/125824A1 |
Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a processing chamber comprises a chamber body defining an interior...
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WO/2022/117746A1 |
Method for producing a device to be used within a plasma etching chamber for the manufacturing of semiconductor components, comprising providing a body forming the substrate of the device, applying a first coating on the surface of the b...
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WO/2022/117285A1 |
A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising: an objective lens array assembly comprising a plurality of objective lenses, each configured to project one of a plurality of charged-par...
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WO/2022/117754A1 |
The invention relates to a coated cutting tool comprising a substrate and a coating, the coating comprises a (Ti,Al,Si)N layer, the (Ti,Al,Si)N layer comprises a periodical change in contents of the elements Ti, Al, and Si, over the thic...
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WO/2022/118294A1 |
A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain...
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WO/2022/119674A1 |
An apparatus may include a drift tube assembly, arranged to transmit an ion beam. The drift tube assembly may include a first ground electrode; an RF drift tube assembly, disposed downstream of the first ground electrode; and a second gr...
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WO/2022/119629A1 |
A switched capacitor modulator (SCM) includes a RF power amplifier. The RF power amplifier receives a rectified voltage and a RF drive signal and modulates an input signal in accordance with the rectified voltage to generate a RF output ...
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WO/2022/117295A1 |
A charged-particle tool configured to generate a plurality of sub- beams from a beam of charged particles and direct the sub-beams downbeam toward a sample (600) position, the tool charged-particle tool comprising at least three charged-...
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WO/2022/120063A1 |
Embodiments of the disclosure relate to articles, coated chamber components, methods of coating chamber components and systems with a metal fluoride coating that includes at least one metal fluoride having a formula of M1xFw, M1xM2yFw or...
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WO/2022/119010A1 |
A plasma process monitoring apparatus may include an electro-optical (EO) sensor module and an optical guide. The EO sensor module may be arranged inside a plasma chamber in which performed is a semiconductor process for processing a sub...
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WO/2022/117130A1 |
Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions which is formed with a vacuum chamber (1) whose inner volume (101) is through a regulation valve (2) connected wit...
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WO/2022/117125A1 |
Disclosed in the embodiments of the present invention is an electron microscope, comprising: an electron source, which is configured to generate an electron beam; a first beam conduit, which is configured to accelerate the electron beam;...
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WO/2022/111427A1 |
Provided are a semiconductor process device and a plasma starting method. The semiconductor process device comprises: a reaction chamber (1); a gas inlet assembly configured to introduce reaction gas into the reaction chamber (1); an upp...
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WO/2022/115528A1 |
Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change ind...
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WO/2022/115210A1 |
Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow...
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WO/2022/113336A1 |
To make a novel immunostaining applicable to pathological diagnoses and studies, provided is a sample exchange chamber that comprises a container 2 into which a substrate carrying a sample thereon can be introduced, a specific solution i...
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WO/2022/115275A1 |
Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a w...
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WO/2022/115157A1 |
A radio frequency (RF) power generation system includes a RF power source that generates a RF output signal delivered to a load. A RF power controller is configured to generate a control signal to vary the RF output signal. The controlle...
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WO/2022/110565A1 |
Disclosed are a structure for suppressing electromagnetic interference and leaky waves, and a radio frequency power supply and a plasma etching apparatus. Metalized honeycomb mesh recessed-cavity arrays are used on all inner walls of the...
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WO/2022/110774A1 |
A double-wall multi-structure quartz cylinder device, belonging to the technical field of ion beam etching. Said device specifically comprises a quartz cylinder outer wall, at least one quartz cylinder inner liner being provided inside t...
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WO/2022/114017A1 |
This method for manufacturing an electrostatic deflector includes: a step for forming raw materials including a ceramic into desired shapes and obtaining a plurality of sheet-shaped first molded bodies (10); a step for layering the plura...
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WO/2022/112130A1 |
The invention relates to a device for extracting ions and/or electrons from a plasma, comprising a grid (1) and a grid holder (2), on the circumference of which the grid (1) is fastened. According to the invention, the grid (1) is config...
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WO/2022/111567A1 |
The present invention provides a semiconductor process device and a power control method. The device comprises an upper electrode assembly, a process chamber and a power adjustment assembly. The process chamber is provided with a chuck f...
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WO/2022/115205A1 |
An apparatus may include a scanner, arranged to receive an ion beam, and arranged to deliver a scan signal, defined by a scan period, to scan the ion beam between a first beamline side and a second beamline side. The apparatus may includ...
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WO/2022/105794A1 |
The present invention provides a process chamber and a semiconductor process device. The process chamber is applied to a semiconductor process device, and comprises a chamber body, a base and a chuck assembly; a reaction chamber is forme...
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WO/2022/108743A1 |
A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic pow...
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WO/2022/106622A1 |
There is provided a drive circuit for a dielectric barrier discharge device. The drive circuit comprises: a power supply connectable in use across a dielectric discharge gap, the dielectric discharge gap providing a capacitance; and an i...
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WO/2022/106161A1 |
A detector may be provided for a charged particle apparatus comprising: a sensing element including a diode; and a circuit configured to detect an electron event caused by an electron impacting the sensing element, wherein the circuit co...
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WO/2022/108526A1 |
Disclosed is an apparatus and method for forming a magnetic recording medium having a recording layer with a plurality of perpendicular magnetic domains configured to store data; and a carbon overcoat formed on the recording layer. The c...
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WO/2022/108754A1 |
An impedance match housing is described. The impedance match housing includes an impedance matching circuit having an input that is coupled to a radio frequency (RF) generator. The impedance matching circuit has an output that is coupled...
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WO/2022/108755A1 |
In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided...
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WO/2022/108888A1 |
Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of RIE components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a porti...
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WO/2022/108789A1 |
Embodiments of the present disclosure provide a method and an apparatus for processing a substrate. The apparatus has a ring assembly. The ring assembly has an edge ring and a shadow ring. The edge ring has a ring shaped body. The edge r...
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WO/2022/108900A1 |
A substrate support for a substrate processing system includes a baseplate and a spray coat layer arranged on the baseplate. The spray coat layer has a first thickness and a first thermal conductivity. A bond layer is arranged on the spr...
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WO/2022/109049A1 |
A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input para...
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WO/2022/108332A1 |
Proposed are a gas supplier and a substrate deposition apparatus. The gas supplier is made of a material different from that of conventional gas suppliers so as to exhibit minimized bending deformation in a high-temperature environment, ...
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WO/2022/108753A1 |
A system for performing a plasma process on a wafer is provided, including: a chamber configured to receive a wafer for plasma processing and having an interior defining a plasma processing region in which a plasma is provided for the pl...
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WO/2022/108880A1 |
Gas boxes for providing semiconductor processing gases are provided that incorporate a cross-flow ventilation system that may effectively remove potentially leaking gases from within the gas box at significantly lower volumetric flow rat...
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WO/2022/109016A1 |
Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a subs...
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WO/2022/108707A1 |
A purge ring including a supply port configured for receiving gas. An outer channel is connected to the supply port. An outlet network is configured for an exit flow of the gas proximate to an inner diameter of the purge ring. The purge ...
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WO/2022/106143A1 |
Disclosed herein is an inspection tool and a method for identifying defects in a sample. The method includes steps of scanning a first area of a sample with a first detector-beam and scanning a second area of the sample with a second det...
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