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WO/2022/086673A1 |
Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion, a target di...
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WO/2022/083170A1 |
Embodiments of the present disclosure provide a grid, comprising: a carrier body; and at least one support column, the support column being located on the carrier body, the support column having a top surface for supporting a sample, at ...
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WO/2022/086724A1 |
Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assem...
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WO/2022/086709A1 |
Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In ...
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WO/2022/086670A1 |
A system and method for creating various dopant concentration profiles using a single implant energy is disclosed. A plurality of implants are performed at the same implant energy but different tilt angles to implant ions at a variety of...
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WO/2022/083789A1 |
Disclosed in the embodiments of the present invention is an electron microscope, comprising: an electron source, which is configured to generate an electron beam; a first beam conduit, which is configured to accelerate the electron beam;...
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WO/2022/081373A1 |
The present invention provides a method for depositing an ultra-thin film onto a wafer. The method comprising the following steps. A sputtering chamber is provided wherein the sputtering chamber is collectively defined by a wafer handlin...
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WO/2022/081449A1 |
A radio-frequency (RF) power circuit for a multi-electrode cathode in a processing chamber may include an RF source and inductive element(s) that are conductively coupled to the RF source. A first inductive element may be inductively cou...
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WO/2022/078802A1 |
Disclosed herein is an aperture array configured to define sub-beams that are scanned in a scanning direction in a charged particle apparatus, the aperture array comprising a plurality of apertures arranged in an aperture pattern that co...
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WO/2022/080658A1 |
The present invention relates to an RF sputtering apparatus for controlling an atomic layer of a thin film and, more specifically, to an RF sputtering apparatus which comprises a power cable and a power line as a single crystal copper wi...
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WO/2022/081458A1 |
Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing regi...
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WO/2022/080629A1 |
A linear movement sealing device is disclosed. The linear movement sealing device according to an embodiment of the present invention is mounted to a chamber in which a semiconductor substrate is processed while a susceptor with the semi...
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WO/2022/081499A1 |
Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electros...
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WO/2022/080688A1 |
The present invention relates to an apparatus and method for forming a thin film, the apparatus comprising: a chamber having inside a substrate processing space; a substrate support unit connected to the chamber so as to support a substr...
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WO/2022/081354A1 |
Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded ...
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WO/2022/079203A1 |
Apparatus for generating a plasma via the transient hollow cathode discharge effect is disclosed. The apparatus comprises a chamber comprising an inlet through which gas may enter the chamber and an outlet through which the gas may exit ...
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WO/2022/081700A1 |
Disclosed is a multilayer sintered ceramic body comprising at least one first layer comprising at least one crystalline phase of YAG, wherein the at least one first layer has at least one surface; and at least one second layer comprising...
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WO/2022/080656A1 |
The present invention relates to a substrate processing device, comprising: a chamber; a chamber lid that supports the upper portion of the chamber; a susceptor that is installed to face the chamber lid and supports a substrate; a gas ej...
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WO/2022/081849A1 |
A magnetron sputtering system includes a substrate mounted within a vacuum chamber. A plurality of cathode assemblies includes a first set of cathode assemblies and a second set of cathode assemblies, and is configured for reactive sputt...
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WO/2022/081714A1 |
A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are flui...
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WO/2022/081535A1 |
A substrate processing system includes a substrate support, N RF sources and a controller. The substrate support is arranged in a processing chamber, supports a substrate on an upper surface thereof, and includes: a baseplate made of ele...
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WO/2022/082208A1 |
Exemplary substrate processing systems may include a body that defines processing and transfer regions. The systems may include a liner atop the body. The systems may include a faceplate atop the liner. The systems may include a support ...
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WO/2022/081715A1 |
Exemplary substrate processing system may include a chamber body that defines a processing region. The systems may include a liner positioned atop the chamber body. The liner may include first disconnect members. The systems may include ...
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WO/2022/078592A1 |
According to one aspect of the present disclosure, a sputter deposition source (100) for coating a substrate (10) arranged in a coating area (105) of a deposition chamber (101) is provided. The sputter deposition source (100) includes a ...
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WO/2022/078336A1 |
Provided by the present invention are an impedance matching method applied to a semiconductor process device, an impedance matcher and the semiconductor process device. The impedance matching method comprises: at the beginning of a proce...
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WO/2022/081343A1 |
Exemplary semiconductor processing systems may include a remote plasma source and a processing chamber. The processing chamber may include a gasbox defining an access into the processing chamber. The systems may include an adapter positi...
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WO/2022/076162A1 |
An electron source is disclosed. The electron source may include an electron emitter configured to generate one or more electron beams. The electron source may further include a magnetic suppressor electrode surrounding at least a portio...
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WO/2022/073613A1 |
The present disclosure provides a carrier transport system for transporting a carrier 100 within a vacuum chamber, a method of transportation of a carrier, and an apparatus for vacuum processing of a substrate. The carrier transport syst...
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WO/2022/076227A1 |
A moveable edge ring system for a substrate processing system includes a top moveable ring including a first annular body arranged around a substrate support. The top moveable ring is exposed to plasma during substrate processing. A move...
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WO/2022/076179A1 |
Exemplary semiconductor processing systems may include a processing chamber, an inductively coupled plasma (ICP) source disposed in or on the processing chamber, and a support configured to position a substrate. The support can be dispos...
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WO/2022/074262A1 |
The invention provides a system and method for measuring a characteristic of a plasma or a plasma chamber, wherein the plasma chamber has a viewport or a surface which is permeable to electromagnetic radiation such that at least a portio...
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WO/2022/076299A1 |
Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a suppor...
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WO/2022/075975A1 |
An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first...
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WO/2022/076144A1 |
Shadow ring kits and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber, the elect...
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WO/2022/073581A1 |
A tumbling protector and a method for compensating tumbling of a cathode rotating around an axis of rotation is provided. The tumbling protector may include a protector centering element being configured to be mounted spaced apart from t...
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WO/2021/262371A9 |
Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the ...
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WO/2022/075841A2 |
A MEMS device for transmission microscopy, said device comprising - a planar body, said body having an observation window, - a sample chamber located at said observation window, - a conduit extending in said body, said conduit having - a...
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WO/2022/072234A1 |
Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse...
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WO/2022/069274A1 |
An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured t...
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WO/2022/070498A1 |
Provided is a charged particle beam device with which it is possible for the angle of inclination of a sample stage to be set appropriately, even if an observation surface is larger than the field of view, and a sample observation method...
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WO/2022/072831A1 |
Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.
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WO/2022/070311A1 |
Provided is technology that can specify the irradiation region or the irradiation position of a beam and a light as clearly as possible. A charged particle beam device 1 comprises: a position adjusting mark 10 that is mounted on a stage ...
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WO/2022/070308A1 |
This control device: controls a contact probe in sync with a light that is a prescribed wavelength and is pulse-controlled; uses a measurement apparatus to measure characteristics of a sample to be inspected or a sample for analysis; and...
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WO/2022/069073A1 |
The invention relates to a multiple particle beam microscope and an associated method with a fast autofocus around an adjustable working distance. Proposed is a system having one or more fast autofocus correction lenses for adapting, in ...
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WO/2022/072048A1 |
A plasma processing system includes a plasma chamber configured to contain a plasma, a shutter chamber fluidically coupled to the plasma chamber via a first orifice, a mass spectrometer fluidically coupled to the shutter chamber, and a s...
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WO/2022/072947A1 |
A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pul...
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WO/2022/069050A1 |
A method of depositing a material on a substrate is described. The method includes sputtering at least a component of the material from a first rotary target having a first magnet assembly and a second magnet assembly. The first magnet a...
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WO/2022/070661A1 |
Provided are a sample holder for electrochemical charge-type hydrogen permeation detection that uses an electrolyte solution, and a hydrogen permeation diffusion path observation device that measures hydrogen ions permeating a sample hel...
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WO/2022/070236A1 |
Provided are an image quality improvement system and an image quality improvement method for improving the image quality of a low quality image by machine learning, the image quality improvement system and the image quality improvement m...
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WO/2022/072370A1 |
A substrate support configured to support a substrate having a diameter D comprises a first inner electrode and a second inner electrode that are each D- shaped, define a first outer diameter that is less than D, and are configured to be...
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