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WO/2023/040758A1 |
An ion beam etching machine and a lower electrode structure thereof. The lower electrode structure comprises an electrode plate, a ring pressing mechanism, and a lifting mechanism, the ring pressing mechanism being configured to support ...
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WO/2023/043768A1 |
An enclosure for a coil in a substrate processing system includes a first body comprised of a dielectric material. The first body includes a first surface, a second surface, a first edge, and a second edge, and the first surface defines ...
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WO/2023/043015A1 |
A magnetic field generation device, according to one embodiment, generates a magnetic field inside a chamber of a sputtering device. The magnetic field generation device may comprise: a housing which has an annular shape so as to surroun...
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WO/2023/043091A1 |
The present invention relates to a replaceable profile upper electrode and a plasma processing apparatus including same, wherein the upper electrode includes a lower surface in contact with plasma, and includes a first region and a secon...
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WO/2023/043748A1 |
A junction system for a direct-drive radiofrequency power supply includes a first terminal connected to a radiofrequency signal supply pin that is connected to an output of a direct-drive radiofrequency signal generator. The junction sys...
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WO/2023/043558A1 |
Embodiments provided herein generally include apparatus, plasma processing systems and methods for distortion current mitigation. An example plasma processing system includes a voltage source coupled to an input node, which is coupled to...
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WO/2023/043751A1 |
A radiofrequency calibration system for a direct-drive radiofrequency power supply includes a reference box that includes a reference circuit for converting a non-reference input impedance to a reference output impedance. The reference b...
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WO/2023/041962A1 |
This invention is about the device using nano atmospheric oxygen plasma method (3) to disinfect environments in working and living area, healthcare sectors, food, agricultural and livestock areas and facilities in order to provide clean ...
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WO/2023/041191A1 |
The invention relates to a method for operating a multi-beam particle microscope in a contrast operating mode, comprising the following steps: irradiating an object with a plurality of charged first individual particle beams, each first ...
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WO/2023/043042A1 |
A plasma uniformity control system according to one embodiment comprises: a plasma generation unit for generating plasma by applying pulse power to plasma source gas; an ion supply unit connected to the plasma generation unit and receivi...
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WO/2023/041017A1 |
Provided are a sputtering target and a method for manufacturing the sputtering target. The sputtering target comprises: a tubular liner tube, an axis thereof being defined as an axial direction, and a plane where a radial direction is lo...
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WO/2023/043600A1 |
An ion source. The ion source may include a plasma chamber to house a plasma, and an extraction assembly, disposed along a side of the plasma chamber, and comprising at least one extraction aperture. The ion source may further include an...
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WO/2023/041844A1 |
A substrate processing apparatus (100), comprising a reaction chamber (20) for processing at least one substrate, and a deformable in-feed assembly (85) comprising an upper (70)and a lower (80) portion movable with respect to each other,...
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WO/2023/042400A1 |
This charged particle beam microscope image processing system comprises: a charged particle beam optical system for irradiating a sample with a charged particle beam and outputting a detection signal for charged particle from the sample;...
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WO/2023/039357A1 |
Disclosed herein is a sintered ceramic body comprising at least one layer comprising from 90% to 99.8% by volume of polycrystalline yttrium aluminum garnet (YAG) and from 15 ppm to 500 ppm of zirconium, wherein the at least one layer com...
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WO/2023/038002A1 |
Provided is an electron beam application device capable of obtaining detection data of an irradiation region even when a detector has a small dynamic range of detection sensitivity.　This electron beam application device comprises a lig...
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WO/2023/038838A1 |
A plasma system includes a first matchless plasma source (MPS) that generates a first sinusoidal waveform having a first frequency. The plasma system includes a first filter coupled to the first MPS to filter a second frequency. The plas...
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WO/2023/039186A1 |
Methods, systems, and computer-readable mediums for configuring a lithography tool to manufacture a semiconductor device. The method includes selecting a first variable, selecting a second variable, selecting at least one response variab...
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WO/2023/038370A1 |
The present invention relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports at least one substrate in the chamber; a lower plate which is disposed above the substrate support part; and...
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WO/2023/038174A1 |
The present invention relates to an apparatus for forming a high-functional compound layer on the surface of a material by using ion injection, the apparatus comprising a first ion generator and a second ion generator, which are respecti...
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WO/2023/036911A1 |
The present invention relates to a method (1800) and an apparatus (1700) for determining an intensity distribution of at least one beam tail (120, 125, 130, 135) of a focused particle beam (100). The method (1800) comprises the steps of:...
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WO/2023/036542A1 |
Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a firs...
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WO/2023/038763A1 |
A method for etching in plasma processing in a plasma chamber, including continually rotating between a first etch cycle and a second etch cycle for a period of time to etch a feature in a masked substrate. The method including performin...
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WO/2023/038468A1 |
A plasma state variable specification device including a double probe having an asymmetric area according to an embodiment may comprise: a first probe; a second probe; a voltage application part for applying a preconfigured voltage to th...
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WO/2023/036895A1 |
The present invention relates to a method (1800) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), comprising the steps of: (a) producing (1850) at least one first local, electrical...
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WO/2023/038772A1 |
An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves a...
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WO/2023/038814A1 |
A drift tube may include a middle portion, arranged as a hollow cylinder, and coupled to receive an RF voltage signal. The drift tube may include a first end portion, adjacent to and electrically connected to the middle portion. The midd...
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WO/2023/038771A1 |
An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the e...
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WO/2023/038773A1 |
Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus ...
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WO/2023/038903A1 |
Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backs...
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WO/2023/038871A1 |
The present disclosure provides an inspection system and a method of stray field mitigation. The system includes an array of electron beam columns, a first permanent magnet array, and a plurality of shielding plates. The array of electro...
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WO/2023/037545A1 |
The purpose of the present invention is to provide an ion beam device that can sharpen an emitter tip to the atomic level with good reproducibility and while curbing device downtime. The ion beam device according to the present invention...
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WO/2023/036593A1 |
Described herein is a metrology system and a method for converting metrology data via a trained machine learning (ML) model. The method includes accessing a first (MD1) SEM data set (e.g., images, contours, etc.) acquired by a first scan...
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WO/2023/032080A1 |
This charged particle beam device (10) comprises a focused ion beam irradiation optical system (14), an electron beam irradiation optical system (15), a needle (18), a needle-driving mechanism (19), a display device (21), and a computer ...
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WO/2023/032571A1 |
This substrate transfer apparatus (10) comprises a rod member (15) that operates so as to rotate about a rotation axis A1, a holder-side turning member (12) linked to a holder (11) for holding a substrate S, a holder-side support member ...
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WO/2023/033339A1 |
The present invention relates to an electrostatic chuck installed especially in a process chamber of a semiconductor wafer manufacturing apparatus, and a ring apparatus around the electrostatic chuck and, more specifically, to a structur...
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WO/2023/032075A1 |
A focused ion beam lens barrel (17) of this charged particle beam device comprises an ion source (41) and an ion optical system (42). The ion optical system (42) comprises an aperture member (54b) having formed therein a plurality of thr...
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WO/2023/032034A1 |
The purpose of the present invention is to provide an electron microscope that makes it possible to achieve substantial energy resolution without incorporating a long drift space and that also makes it possible to achieve high energy-dis...
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WO/2023/033358A1 |
The present invention relates to a core-inserted spiral tube and a manufacturing method thereof and, more specifically, to: a core-inserted spiral tube which comprises a metal spiral tube and a polymer elastic material inserted into the ...
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WO/2023/033259A1 |
The present invention provides a substrate treatment apparatus. In one embodiment, a substrate treatment apparatus comprises: a housing in which an upper housing and a lower housing are combined to define a treatment space; a gas supply ...
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WO/2023/034518A1 |
A method for etching features in a carbon containing layer below a mask is provided. A simultaneous etch and passivation step is provided comprising flowing an etch gas comprising a boron containing passivant gas and an oxygen containing...
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WO/2023/034480A1 |
Methods and apparatus reduce defects in substrates processed in a physical vapor (PVD) chamber. In some embodiments, a method for cleaning a process kit disposed in an inner volume of a process chamber includes positioning a non-sputteri...
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WO/2023/030581A1 |
The invention relates to a sample carrier (100) for holding a sample in an evacuated environment or a defined gas atmosphere. The sample carrier comprises a cover plate (10) and an electrical operating device (20) which is connected to t...
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WO/2023/033961A1 |
Embodiments disclosed herein include methods for removing a metal containing layer from a chamber of a tool. In an embodiment, the method comprises generating a remote plasma in the tool. The method may continue with flowing reactive spe...
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WO/2023/032083A1 |
An ion beam lens barrel (17) of this charged particle beam device comprises an ion source (41) and an ion optical system (42). The ion optical system (42) comprises an aperture member (62) having formed therein multiple through-holes (62...
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WO/2023/034209A1 |
Systems and device for removing edge bead accumulated on an edge of a wafer includes a first electrode disposed in a center of a nozzle used within a process chamber and a second electrode embedded within a dielectric material that surro...
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WO/2023/032079A1 |
The present invention provides a computer, a program, and a charged particle beam processing system, with which it is possible to reduce adjustment and setting work of conditions for observation or machining by an operator in an FIB-SEM ...
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WO/2023/034436A1 |
Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The...
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WO/2023/032078A1 |
An ion beam tube (17) of a composite beam device (10) is provided with an ion source (41) and an ion optical system (42). The ion optical system (42) is provided with a diaphragm member (55b) in which at least one through-hole (55c) that...
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WO/2023/027866A1 |
Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the side...
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