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WO/2022/194300A1 |
Disclosed in the embodiments of the present invention are an electron beam generating device and an electron microscope. The electron beam generating device comprises: a cathode configured to emit electrons; a lead-out electrode provided...
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WO/2022/197536A1 |
A system comprises a pedestal and a controller. The pedestal is arranged below a showerhead in a processing chamber and includes at least three electrodes to clamp a substrate to the pedestal during processing. The controller is configur...
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WO/2022/196499A1 |
An emitter comprising: an insulator; a pair of terminals mounted to the insulator and spaced apart from each other; at least one filament mounted between the pair of terminals in an arch shape; and an electron source fixed to the filamen...
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WO/2022/197691A1 |
A dielectric window for a process chamber is provided. The dielectric window includes a disc-shaped body consisting of a first dielectric material having a first dielectric constant. An annular portion consisting of a second dielectric m...
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WO/2022/194482A1 |
Disclosed herein is a flood column for projecting a charged particle flooding beam along a beam path towards a sample to flood the sample with charged particles prior to assessment of the flooded sample using an assessment column, the fl...
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WO/2022/192063A1 |
Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote ...
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WO/2022/192088A1 |
Directed energy beam deflections are compensated by mapping pixel coordinates of an image of a patterning field to patterning field spatial coordinates. For example, electron beam scanning is compensated by imaging calibration features d...
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WO/2022/191152A1 |
An electron microscope of an embodiment according to the present invention is provided with: an electron gun for irradiating electrons onto a sample; an electron detector for detecting electrons irradiated onto the sample; a photon detec...
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WO/2022/192149A1 |
A system may be configured to monitor an amount of a gas species in a processing chamber using Optical Emission Spectrometry. The gas measurement may be provided as feedback to a control process that generates a target setpoint for a gas...
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WO/2022/191428A1 |
A sputtering target according to an aspect of the present invention may comprise a substrate; and an alloy target layer, disposed on the substrate, having an amorphous phase at a ratio of 98.0% or higher.
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WO/2022/159325A9 |
Embodiments presented provide for a distributed ground single antenna ion source used in scientific experimentation.
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WO/2022/192016A1 |
A method for controlling a critical dimension of a mask layer is described. The method includes receiving a first primary parameter level, a second primary parameter level, a first secondary parameter level, a second secondary parameter ...
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WO/2022/192012A1 |
A component in a semiconductor processing chamber is provided. An electrically conductive semiconductor or metal body has a CTE of less than 10.0x10-6 /K. An intermediate layer is disposed over at least one surface of the body, the inter...
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WO/2022/192518A1 |
Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor and an inert precursor within a processing region of a semiconductor processing chamber. The methods may include, subsequent a fi...
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WO/2022/192296A1 |
Embodiments of coils for use in process chambers are provided herein. In some embodiments, a coil for use in a process chamber includes: a coil body having a first end portion and an opposing second end portion coupled to the first end p...
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WO/2022/192187A1 |
Methods and apparatus for lift pin assemblies for substrate processing chambers are provided. In some embodiments, a lift pin assembly includes a lift pin comprising a shaft, a head, and a coupling end, the head configured to rest agains...
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WO/2022/192297A1 |
Embodiments of substrates supports for use in process chambers are provided herein. In some embodiments, a substrate support includes: a dielectric plate having a first side configured to support a substrate having a given diameter and i...
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WO/2022/190473A1 |
Provided are a light guide, an electron ray detector, and a charged particle device which make it possible improve optical guiding efficiency for light that is produced upon receiving detection target rays. An electron ray detector (1A) ...
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WO/2022/192918A1 |
A plasma reaction system may include a plasma chamber and an ancillary reaction chamber. The plasma chamber may include a plasma chamber inlet for introducing reactant gases into the plasma chamber, plasma chamber walls that form an inte...
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WO/2022/191945A1 |
A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further i...
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WO/2022/154936A9 |
Disclosed herein are plasma chamber components that comprise a ceramic sintered body comprising at least one first layer comprising a surface having a surface area and at least one crystalline phase of from 90% to 99.8% by volume of poly...
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WO/2022/192041A1 |
Exemplary support assemblies may include a top puck characterized by a first surface and a second surface opposite the first surface. The top puck may define a recessed ledge at an outer edge of the first surface of the top puck. The ass...
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WO/2022/184713A1 |
The invention relates to a method for impedance matching using an impedance matching network (2) comprising an input (3) for connecting an RF power generator (5) and an output (4) for connection to a load (6) that has at least one first ...
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WO/2022/187029A1 |
Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate, a ceramic top plate, and a bond layer between the ce...
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WO/2022/184760A1 |
A gas injection subsystem (5) for use in an inspection system (1) serves to inspect a sample (2) by use of charged particles. At least one gas duct (10) of the gas injection subsystem (5) guides a gas flow from a gas reservoir (11) to a ...
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WO/2022/187226A1 |
A system and method for differentiating between different modes of pulsed electrical discharges via of an amplitude to time (ATC) conversion circuit is described. A bipolar ATC circuit is used to add together the positive and negative po...
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WO/2022/186879A1 |
Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a top delivery gas nozzle configured to direct process gas toward a substrate support surface of a subst...
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WO/2022/184279A1 |
A radiation detector for position-resolved detection of radiation comprises at least one sensor tile (11) with a front side (111) facing incident radiation, and a back side (112) opposite the front side (111). The sensor tile (11) compri...
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WO/2022/186326A1 |
The purpose of the present disclosure is to propose a training method in which training is performed by using suitable low and high quality images. To this end, the training method is proposed in which training is executed by inputting, ...
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WO/2022/184879A1 |
A target for sputtering, use of said target and method of manufacture of said target is provided.The target has a single piece target material for sputter deposition, with at least 1 mm, for example at least 2 mm, such as 4 mm or more of...
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WO/2022/187340A1 |
A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness;...
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WO/2022/185390A1 |
The purpose of the present invention is to provide a charged particle beam device that can specify irradiation conditions for primary charged particles that can obtain a desired charged state without adjusting the acceleration voltage. T...
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WO/2022/186941A1 |
A method for selective barrier metal etching includes performing a hydrogen implantation process, in an inductively coupled plasma (ICR) etch chamber, to chemically reduce an oxidized portion of a barrier metal layer formed within a feat...
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WO/2022/180124A1 |
A computer-implemented method (200) for the simulation of an energy-filtered ion implantation (EFII) is provided, comprising the steps of: Determining (201 ) at least one part of an energy filter (25); Determining (202) at least one part...
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WO/2022/182166A1 |
The present invention provides a protective film treating apparatus which coats the surface of a plurality of objects to be treated with a protective film all at once, while positioning a part, which does not require protective film coat...
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WO/2022/182407A1 |
Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, ...
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WO/2022/180037A1 |
A computer-implemented method (200) for the simulation of an energy-filtered ion implantation (EFII) is provided, comprising the steps of: Determining (201) at least one part of an energy filter (25); Determining (202) a simulation area ...
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WO/2022/182410A1 |
Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, ...
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WO/2022/182443A1 |
Methods, systems, and apparatus for conducting chucking operations are disclosed that use an adjusted chucking voltage if a process shift occurs. In one implementation, a method includes conducting a first processing operation on a subst...
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WO/2022/180055A1 |
The invention relates to an atomization target (10), a coating system (30), and a coating method for same. The atomization target (10) comprises a base (12) with a target plate (14) which is secured thereon and which is made of a first a...
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WO/2022/180381A1 |
The present invention relates to an electron gun cathode mount adapted at one end to secure a thermionic cathode and at the other end to be connected to an attachment member, wherein the electron gun cathode mount is structured so as to ...
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WO/2022/177226A1 |
The present invention provides an inductively coupled plasma apparatus for processing exhaust gas, the apparatus comprising: an inductively coupled plasma reactor installed in an exhaust pipe through which an exhaust gas generated in a p...
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WO/2022/177845A1 |
Plasma processing and power supply systems and methods are disclosed. The plasma processing system comprises a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver p...
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WO/2022/177370A1 |
Provided in one embodiment of the present invention is a plasma treatment device comprising: an accommodation unit for accommodating an object to be treated; an exhaust unit connected to the accommodation unit to exhaust the air of a fix...
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WO/2022/177487A1 |
An illumination control device (7), for an analyser arrangement (100), is described. The analyser arrangement is configured to determine at least one parameter related to charged particles emitted from a sample (3). The illumination cont...
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WO/2022/177846A1 |
Plasma processing systems and power delivery methods are disclosed. A system may comprise at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. Electrica...
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WO/2022/175000A1 |
A charged particle beam apparatus (100) is described. The charged particle beam apparatus includes a first vacuum region (121) in which a charged particle beam emitter (105) for emitting a charged particle beam (102) along an optical axi...
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WO/2022/177916A1 |
Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflo...
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WO/2022/173557A1 |
A confinement ring for use in a plasma processing chamber includes an upper horizontal section, a vertical section, and a lower horizontal section. The upper horizontal section extends between an upper inner radius and an outer radius of...
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WO/2022/173451A1 |
A device detects traces of explosive materials, weapons, firearms, knives or drugs. The device is used a stand-alone device or coupled to an explosive detector using mass spectrometry or ion mobility spectrometry technologies. The device...
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