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WO/2022/256528A1 |
Plasma generators and methods of generating plasma are disclosed. Electrodes in a reaction zone are energized by a high voltage power source that is electrically insulated from the electrodes. A first conductor array, preferably a coil, ...
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WO/2022/256558A1 |
A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first dep...
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WO/2022/246896A1 |
The present application relates to a centering mechanism and a scanning electron microscope having same. The centering mechanism is mounted in the scanning electron microscope and used for performing centering calibration on an electron ...
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WO/2022/246897A1 |
The present application relates to an electrostatic field deflector, which is applicable to being mounted in a scanning electron microscope and comprises: a deflection polar plate and an insulation mounting base. A mounting hole is forme...
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WO/2022/251269A2 |
In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit includes at least one electronically variable capacitor (EVC). Each EVC includes fixed capacitors, each of the fixed capacitors having a corresponding...
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WO/2022/250824A1 |
A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a ...
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WO/2022/250818A1 |
A method and apparatus for reducing as-deposited and metastable defects relative to amorphous silicon (a-Si) thin films, its alloys and devices fabricated therefrom that include heating an earth shield positioned around a cathode in a pa...
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WO/2022/250823A1 |
A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to be e...
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WO/2022/248138A1 |
The present invention provides a charged particle optical device for a charged particle system. The device projects an array of charged particle beams towards a sample. The device comprises a control lens array to control a parameter of ...
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WO/2022/251156A1 |
A free radical generator includes a discharge electrode assembly with discharge electrode pins in a radial pattern and electrically configured to receive one or more voltage pulses. A liquid or solid counter electrode has a surface separ...
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WO/2022/248196A1 |
A multi-beam charged particle system and a method of setting a working distance WD of the multi beam charged particle system is provided. With the method, the working distance is adjusted while the imaging performance of a wafer inspecti...
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WO/2022/246895A1 |
The present application relates to a centering mechanism and a scanning electron microscope comprising same. The centering mechanism comprises an electron gun cavity and a mounting cavity that are successively and detachably connected; t...
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WO/2022/251161A1 |
Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the c...
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WO/2022/250998A1 |
A confinement ring for use in a plasma processing chamber includes an upper horizontal section, an upper vertical section, a mid-section, a lower vertical section, a lower horizontal section and a vertical extension. The upper horizontal...
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WO/2022/248296A2 |
A charged particle detector may include a plurality of sensing elements formed in a substrate, wherein a sensing element of the plurality of sensing elements is formed of a first region on a first side of the substrate, and a second regi...
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WO/2022/246884A1 |
The present application relates to a deflector mechanism capable of reducing a phase difference, comprising a rotatable deflector, a connection rod, a fixed deflector, and a mounting portion. The central axis of rotation of the rotatable...
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WO/2022/250937A1 |
Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber,...
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WO/2022/251074A1 |
A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disp...
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WO/2022/250879A1 |
Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising a...
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WO/2022/248141A1 |
Multi-beam effects which reduce the accuracy, or the speed of a wafer inspection are corrected dependent on an inspection position using an improved multi-beam system and an improved wafer inspection method using the multi-beam system. T...
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WO/2022/249707A1 |
[Problem] To provide an electron gun which, with simple constituent members of an electron gun, can be configured to irradiate an electron beam having desired electron beam parameters onto a desired location of an irradiation target. T...
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WO/2022/249605A1 |
In the present invention, a condenser lens processes an ion beam so as to form a parallel beam shape and is provided with an electrically powered aperture that varies the passage area of the ion beam processed by the condenser lens and c...
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WO/2022/249371A1 |
With respect to an ion source 101, an ion milling device according to the present invention applies a discharge voltage Vd between an anode 203 and a cathode 201, 202, and applies an acceleration voltage Va between the anode and an accel...
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WO/2022/251090A1 |
In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit includes at least one electronically variable capacitor (EVC). Each EVC includes fixed capacitors, each of the fixed capacitors having a corresponding...
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WO/2022/250049A1 |
A sample holder for an impedance microscope according to an embodiment comprises: a first insulating film having a front surface and a back surface; a second insulating film having a front surface opposite the back surface of the first i...
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WO/2022/250936A1 |
Methods and apparatus for processing substrates are provided herein. For example, a magnet to target spacing system configured for use with an apparatus for processing a substrate comprises a sensor configured to provide a signal corresp...
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WO/2022/251140A1 |
Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrat...
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WO/2022/249343A1 |
This particle analyzing device for analyzing a certain particle to be analyzed, using an electron microscope, with the particle placed on an implement: acquires a first reference value and a second reference value relating to brightness ...
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WO/2022/246061A1 |
The present invention relates to the field of electron beam machines, such as linear straight through machines, and methods used for therapeutic uses. More particularly, the present invention relates to electron beam machines that incorp...
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WO/2022/244268A1 |
Provided are a structure for particle acceleration and a charged particle beam apparatus, which enable the suppression of electric field concentration occurring near a negative electrode part. The structure for particle acceleration incl...
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WO/2022/245087A1 |
A strap according to one embodiment of the present disclosure comprises: a first member including a first base having a lower surface, and a first core part engraved in the lower surface; and a second member including a second base havin...
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WO/2022/242978A1 |
The present invention provides a various techniques for detecting secondary charged particles and backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary char...
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WO/2022/243493A2 |
A method of producing coated substrates resistant to plasma corrosion and a related coating are provided. The method comprises depositing, over at least a portion of a substrate, an yttrium-containing plasma resistant coating through a p...
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WO/2022/243048A1 |
Provided is an aberration corrector (101) having a plurality of magnetic poles (210, 211) including a first magnetic pole (210) and further magnetic poles (211), a ring (240) that magnetically connects the plurality of magnetic poles wit...
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WO/2022/242120A1 |
The present application relates to an ion source apparatus and a usage method therefor, and a vacuum treatment system. The apparatus comprises a discharge cavity, wherein the cylindrical central axis thereof is the central axis of the io...
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WO/2022/244149A1 |
Provided is an ion milling device that can achieve remarkable improvement in machining speed controllability and machining profile reproducibility. The ion milling device has: an ion gun (1) that is mounted in a vacuum chamber (4) and th...
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WO/2022/245011A1 |
A semiconductor process system according to an embodiment of the present invention comprises: a substrate support part which includes an electrode and in which a substrate is disposed; and a frequency generation device for providing bias...
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WO/2022/245824A1 |
A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate using plasma and at least one magnetic field source configured to generate one or more active magnetic fields through the proces...
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WO/2022/246076A1 |
Methods of filling wordline features of 3D NAND structures with tungsten include treating a conformal tungsten with nitrogen trifluoride (NF3). The NF3 treatment is preferential to the openings of the wordline features relative to the in...
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WO/2022/243611A1 |
The invention relates to a method for depositing a chromium-based material from a target onto a metal substrate, by continuous magnetron sputtering, using a plasma generated in a gas. According to the invention: the ratio between the flo...
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WO/2022/242126A1 |
An ion source apparatus with an adjustable plasma density, which belongs to the field of semiconductor devices. A coil is wound on the outer side of a discharge cavity of the ion source device having an adjustable plasma density; a radio...
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WO/2022/245545A1 |
A manifold assembly for a processing chamber in a substrate processing system includes a manifold. The manifold includes a first valve assembly configured to flow a liquid coolant at a first temperature from a first channel of a coolant ...
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WO/2022/244054A1 |
The purpose of the present disclosure is to provide a high-voltage insulating structure capable of reducing an electric field around a conductor to which a high voltage is applied. In this high-voltage insulating structure, an electrical...
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WO/2022/245700A1 |
Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the process...
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WO/2022/245761A1 |
A processing chamber includes a grid and a first disk. The grid includes a plurality of holes arranged in the processing chamber. The grid partitions the processing chamber into a first chamber in which plasma is generated and a second c...
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WO/2022/244055A1 |
Provided is a sample holder with high versatility. A sample holder 100 includes: a holder shaft 2; a placement part 3 on which a sample SAM can be placed; a movement mechanism 4 for moving the holder shaft in a first direction; a rotatio...
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WO/2022/238611A1 |
A substrate processing apparatus, comprising a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one h...
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WO/2022/240556A1 |
Various embodiments of systems and methods are described herein for controlling a pulsed plasma. Pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) of the plasma generation source may be controlled based on the m...
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WO/2022/239187A1 |
The purpose of the present invention is to efficiently implement correction of aberrations in an electron microscope comprising an aberration corrector that corrects aberrations using a multipole lens. The electron microscope according t...
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WO/2022/238137A1 |
Assessment systems and methods are disclosed. In one arrangement, charged particles are directed in sub-beams arranged in a multi-beam towards a sample. A plurality of control electrodes define a control lens array. Each control lens in ...
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