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WO/2022/004941A1 |
The present invention relates to a powder plasma treatment device comprising: a chamber part having a powder-receiving portion as a space in which powder is received; one or more stirrer members provided in the chamber part to stir the p...
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WO/2022/004230A1 |
The present invention comprises: a differential exhaust device in which a plurality of annular grooves are formed in a to-be-processed-substrate-facing surface of a head part so as to surround the center of the head part, an opening that...
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WO/2021/261963A1 |
An embodiment of the present specification may provide a plasma generating device having a plurality of operation modes including a first mode and a second mode and configured to perform plasma discharge. The plasma generating device com...
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WO/2021/262827A1 |
First second, third, and fourth radiofrequency (RF) signal generators generate first, second, third, and fourth RF signals, respectively, having first, second, third, and fourth frequencies, respectively. The second and third frequencies...
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WO/2021/258990A1 |
A coil structure, being applied to a plasma processing device. A coil structure (10) comprises at least one group of coil group (100). The coil group (100) comprises a first coil (110) and a second coil (120); the first coil (110) and th...
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WO/2021/262482A1 |
Sealing various machined component parts used in plasma etching chambers using an Atomic Layer Deposition (ALD) coating. By sealing the component parts with the ALD layer, surface erosion/etch caused by repeated exposure to plasma during...
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WO/2021/259446A1 |
An ion beam extraction apparatus (100), being configured for creating an ion beam (1), in particular adapted for a neutral beam injection apparatus of a fusion plasma plant, comprises an ion source device (10) being arranged for creating...
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WO/2021/262925A1 |
Methods and apparatus for controlling a semiconductor process leverage phase shifting between at least two RF generators to improve wafer performance parameters. In some embodiments, an apparatus may include a first radio frequency (RF) ...
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WO/2021/262913A1 |
During electron beam imaging of a semiconductor wafer, the electron beam is adjusted to a first electron dose/nm2/time value below a damage threshold for an image frame grab of a site on the semiconductor wafer. Then the electron beam is...
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WO/2021/260316A1 |
Disclosed is a method for manufacturing an oxide/silver/oxide stack comprising the following steps: - positioning a substrate on a substrate holder, - forming a first layer of conductive transparent oxide (11) on a substrate, - forming a...
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WO/2021/262496A1 |
The present disclosure describes material surface treatment systems and methods for grafting a coded substance (e.g., a molecular code) to a material through a surface treatment process. In some examples, the material is subjected to a p...
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WO/2021/259133A1 |
Disclosed is a stopper for an ion beam etching chamber, the stopper comprising a discharge chamber, wherein an end of the discharge chamber is provided with a grid assembly, a stop piece is mounted in the discharge chamber, and the stop ...
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WO/2021/262063A1 |
A computer-implemented method is described for generating event-averaged and time-resolved spectra, from a plurality of time-resolved spectra of charged particles emitted from a surface (3) of a sample (2), at which surface (3) an event ...
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WO/2021/262665A1 |
Embodiments of process kits for use in plasma process chambers are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper portion and a lower portion extending downward a...
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WO/2021/260261A1 |
A substrate processing apparatus (100), comprising a reaction chamber (130), a central processing volume (60) within a vertically oriented central processing portion (70,72) of the reaction chamber (130), to expose at least one substrate...
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WO/2021/262583A1 |
Carrier rings with radially-varied plasma impedance are provided herein. In some embodiments, a carrier ring may include an outer ring that holds a removable inner ring. The outer ring may be formed of a dielectric material such as ceram...
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WO/2021/262514A1 |
A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hol...
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WO/2021/262522A1 |
A method of forming a carbon hard mask includes generating a radio frequency plasma including carbon-based ions by supplying continuous wave radio frequency power to a plasma processing chamber. The carbon-based ions have a first average...
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WO/2021/260023A1 |
What is described and illustrated is a plasma reactor for the plasma-chemical and/or plasma-catalytic conversion of compounds in a reactor fluid by way of dielectric barrier discharge, comprising two electrodes that are separated from on...
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WO/2021/262513A1 |
A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a cur...
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WO/2021/262527A1 |
Graphene is selectively deposited on a metal layer relative to a dielectric layer of a semiconductor substrate. Dielectric material is selectively deposited on the dielectric layer relative to the metal layer of the semiconductor substra...
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WO/2021/262529A1 |
Dry backside and bevel edge clean is performed without exposure to plasma to remove unwanted photoresist material from a substrate. The substrate is supported on a substrate support and elevated by minimum contact area (MCA) supports so ...
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WO/2021/255886A1 |
This charged particle beam device comprises: a stage (124) on which a sample (108) is placed; a charged particle optical system including a charged particle source (113), and an objective lens (121) which focuses a charged particle beam ...
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WO/2021/257374A1 |
A direct drive system for providing RF power to a component of a substrate processing system includes a direct drive circuit including a switch and configured to supply RF power to the component. A switch protection module is configured ...
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WO/2021/257224A1 |
A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aper...
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WO/2021/255242A1 |
A filter (104a, 104b, 108) for a cathode arc source comprises: a filter duct having at least one bend (104a, 104b), and a first magnetic field source for steering plasma through the filter duct for removal of macroparticles from the plas...
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WO/2021/256606A1 |
The present invention relates to a plasma reaction device which can reduce a heating value through installation of a dual-coil type inductor in a resonant network circuit part, and a cooling method thereof. The plasma reaction device may...
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WO/2021/257328A1 |
A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and per...
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WO/2021/255853A1 |
A charged-particle detecting device 108, 108a, 108b, 108c, 108d, 108e, 108f, 108g or a radiation detecting device 203 detects charged particles or radiation as a detection target. These detection devices are each provided with: a scintil...
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WO/2021/256605A1 |
The present invention relates to a plasma reaction device which can cool a reaction body and a magnetic core by circulating a coolant, and a cooling method thereof. The plasma reaction device may comprise: a reaction body having an annul...
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WO/2021/257267A1 |
Embodiments are disclosed for reducing substrate breaks which result from inadequate de-chucking. Contaminants are removed from the surface of a chuck by exposing the chuck to a plasma process that comprises a hydrogen (H)-containing pla...
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WO/2021/256412A1 |
The present invention provides a method with which it is possible to observe a biological sample in a living state, without significant restrictions due to the properties of the sample itself or due to a structural body accommodating the...
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WO/2021/257105A1 |
A mounting device for holding a sample mounted to a sample holder for use in an inverted microscope. The mounting device includes a platen; a mounting located on a sample side of the platen; a sample holder removably coupled to the mount...
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WO/2021/254726A1 |
A method for obtaining a compensation pattern for a workpiece patterning device comprises printing (S11) a calibration pattern with a plurality of simultaneously operating exposure beams being sweepable in a second direction according to...
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WO/2021/255201A2 |
The invention relates to a method and a device (10) for applying a layer (64) to an item (60), (62). The invention also relates to a coated item (60). The item (60), (62) is disposed in a vacuum chamber (12) and process gas is supplied. ...
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WO/2021/256212A1 |
The present invention maximally obtains information about a sample while suppressing, to a minimum level, damage to the sample due to electron irradiation. This electron microscope analysis system is provided with a detector, such as a C...
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WO/2021/257331A1 |
A method for pulsing is described. The method includes generating a first radio frequency (RF) signal, and pulsing a parameter of the first RF signal between a first parameter level and a second parameter level at a pulsing frequency dur...
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WO/2021/255250A1 |
The invention relates to a switchable-reactor unit (100, 101), comprising: - a high-frequency terminal (112) for connecting to a transmission line (114) for the transmission of a signal at a frequency in the range of 1–200 MHz; and - a...
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WO/2021/257689A1 |
An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out s...
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WO/2021/257712A2 |
An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the c...
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WO/2021/257130A1 |
Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to d...
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WO/2021/256604A1 |
The present invention relates to a plasma reaction apparatus in which a magnetic core is divided to prevent cracks at the edges of the core, the plasma reaction apparatus comprising: a reaction body which has a gas inlet portion formed o...
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WO/2021/256607A1 |
The present invention relates to: a cooling block that can be easily manufactured by forming vertical or horizontal flow paths in an integrated single block body through drilling; and a plasma reaction device having same, and may compris...
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WO/2021/257462A1 |
Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead fac...
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WO/2021/252136A1 |
Embodiments disclosed herein include a cleaning module for the exhaust line of a chamber. In an embodiment, a mobile cleaning module comprises a chamber where the chamber comprises a first opening and a second opening. In an embodiment, ...
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WO/2021/250965A1 |
A multi-charged particle beam drawing device according to one embodiment of the present invention is characterized by comprising: a beam formation mechanism for forming multi-charged particle beams; a dose calculation circuit for calcula...
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WO/2021/252758A1 |
In some examples, a flat Bottom Shadow Ring (fBSR) is provided for processing a substrate in a processing chamber. An example fBSR comprises an overhang for covering an edge of the substrate in the processing chamber. The overhang includ...
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WO/2021/252812A1 |
Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate in an etch process chamber includes: pulsing RF power from an RF bias power supply to a lower electrode dispose...
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WO/2021/252135A1 |
The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body ...
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WO/2021/251190A1 |
The present invention relates to a method for generating an image of a wafer using a scanning electron microscope, and in particular relates to a technique for adjusting the direction of incidence of an electron beam. Provided is a metho...
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