Document |
Document Title |
WO/2022/036222A1 |
A surface treatment device includes a body and a plasma source disposed within the body. The plasma source includes a first inlet through the body and an ionization wave generator adjacent the first inlet to receive feedstock gas via the...
|
WO/2022/032463A1 |
Disclosed in the present invention are a transmission electron microscope high-resolution in-situ fluid freezing chip and a preparation method therefor. A support layer, a freezing layer, an insulating layer, a hole and a central window ...
|
WO/2022/035099A1 |
The present invention relates to a substrate treatment apparatus and a substrate treatment method, the apparatus comprising: a first chamber in which a first treatment process is performed on a substrate; a second chamber in which a seco...
|
WO/2022/033717A1 |
The invention relates to a multiple particle beam system with a mirror mode of operation, a method for operating a multiple particle beam system with a mirror mode of operation and an associated computer program product. The multiple par...
|
WO/2022/031467A1 |
Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a d...
|
WO/2022/028633A1 |
A method of operation of a charged particle beam device, where the observed place on a sample moves within the field of view of the charged particle beam device as the sample is tilted or rotated. At least one sample image in a first sam...
|
WO/2022/031854A1 |
A selected reject band non-RF-coupling tile includes a ground plate disposed on a first side of a printed circuit board. The selected reject band non-RF-coupling tile also includes a planar inductor disposed on a second side of the print...
|
WO/2022/029262A1 |
A processing arrangement (10) comprising: a device (240) for providing a focused particle beam (242); a sample (300), which can be processed with the aid of the particle beam (242) and a process gas (PG); and a flushing plate (100) compr...
|
WO/2022/031903A1 |
Embodiments disclosed herein are generally related to a system for noise reduction in low signal to noise ratio imaging conditions. A computing system obtains a set of images of a specimen. The set of images includes at least two images ...
|
WO/2022/029315A1 |
Method for the particle beam-induced etching of a lithography mask (100), more particularly a non-transmissive EUV lithography mask, having the steps of:a) providing (S1) the lithography mask (100) in a process atmosphere (ATM),b) beamin...
|
WO/2022/031614A1 |
Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting...
|
WO/2022/031392A1 |
An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive th...
|
WO/2022/030064A1 |
A multi charged particle beam drawing device according to one aspect of the present invention is characterized by comprising: a beam formation mechanism that forms a multi charged particle beam; a block region generation circuit that gen...
|
WO/2022/025655A1 |
A nozzle for deposition of powder aerosol for coating is disclosed. The nozzle for deposition of powder aerosol for coating comprises: an entrance part through which carrier gas and the powder aerosol for coating are injected, and a disc...
|
WO/2022/022993A1 |
A method (100) for determining a three-dimensional atomic distribution of a sample (201) having a tip, during an atom probe tomography process. The method accounts for the tip not being axial symmetric and not having a hemispherical shap...
|
WO/2022/026813A1 |
A thin shadow ring for a substrate processing system includes an annular body having an inner diameter and an outer diameter. The inner diameter and the outer diameter define a cross-sectional width of the annular body between the inner ...
|
WO/2022/023695A1 |
There is provided an electron beam welding apparatus (10) comprising socket means (40) formed with a first channel (38) configured to receive a high-voltage supply member, wherein the socket means further comprises a tubular plug (42) ha...
|
WO/2022/026363A1 |
Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wa...
|
WO/2022/026797A1 |
A power generator includes a plurality of amplifier blocks and a combiner. Each of the amplifier blocks include one or more amplifiers, and the combiner combines modulated power signals output from the amplifier blocks to generate an RF ...
|
WO/2022/026133A1 |
A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide la...
|
WO/2022/026653A1 |
An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes ...
|
WO/2022/025959A1 |
Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of t...
|
WO/2022/023304A1 |
Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged- particle source, an optical source, a charged-particle det...
|
WO/2022/023232A1 |
A charged particle beam apparatus for inspecting a sample is provided. The apparatus includes a pixelized electron detector to receive signal electrons generated in response to an incidence of an emitted charged particle beam onto the sa...
|
WO/2022/026127A1 |
Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configure...
|
WO/2022/022819A1 |
A method of imaging a sample with a charged particle beam device, comprising: determining a first focusing strength of an objective lens of the charged particle beam device, the first focusing strength being adapted to focus a charged pa...
|
WO/2022/026130A1 |
A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter...
|
WO/2022/024555A1 |
A processing apparatus comprising a substrate support stage on which a substrate to be processed is mounted, and a head part that can move relative to a surface to be processed of the substrate to be processed, and further comprising a d...
|
WO/2022/020926A1 |
The present invention is essentially a system comprising: a geometrically configured parabolic mirror (1), at least one convergent lens (2), a precise positioning handle (3), at least one optical fibre (4), at least one optical spectrome...
|
WO/2022/026097A1 |
The present disclosure describes material surface treatment systems and methods that employ a byproduct treatment system to receive a byproduct generated by application of a plasma, the byproduct treatment system configured to degrade th...
|
WO/2022/023422A1 |
Pulsing assembly (3) and method for delivering power to a plasma reactor (2) with a first load (8) between a first plasma reactor input port (20) and a plasma reactor common port (10) and with a second load (9) between a second plasma re...
|
WO/2022/023094A1 |
A gas ion gun comprising an anode electrode (16) to remove electrons from a gas in order to create gas ions. The anode electrode comprising a wire (20) made of an electrical conductive material or of a semiconductor material, the wire ex...
|
WO/2022/020113A1 |
Exemplary semiconductor processing systems may include a pumping system, a chamber body that defines a processing region, and a pumping liner disposed within the processing region. The pumping liner may define an annular member character...
|
WO/2022/020639A1 |
Additively manufactured showerheads for semiconductor processing operations are disclosed that may have various features enabled by the use of such manufacturing techniques. In some implementations, such showerheads may have multiple ind...
|
WO/2022/020185A1 |
Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly c...
|
WO/2022/018641A1 |
Method for investigating samples by time-series emission of cathodoluminescence (CL) microscope having electron beam and light sensor. In discovery scan, changes caused by the electron beam are unknown, in an inspection scan changes have...
|
WO/2022/020334A1 |
Methods and apparatus for lift pin interfaces for electrostatic chucks are provided herein. In some embodiments, a lift pin interface in an electrostatic chuck includes: a dielectric plate having a support surface for a substrate; a cond...
|
WO/2022/020189A1 |
The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of th...
|
WO/2022/020707A1 |
A semiconductor processing chamber performs various wafer processing operations that involve at least one of pumping the chamber to high vacuum states and regulating a vacuum (e.g., during introduction of process gases, as gas infiltrate...
|
WO/2022/019130A1 |
An ion gun has an anode, a cathode having first and second portions facing the anode, and a magnet forming a spatial magnetic field between the first and second portions. An annular gap including a curved portion is provided between the ...
|
WO/2022/020186A1 |
Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of th...
|
WO/2022/018782A1 |
A decelerating electrode of this energy filter comprises: an electrode pair that has an opening; and a cavity portion that provided in a rotationally symmetrical manner with the center of the opening as the optical axis. Voltages with el...
|
WO/2022/017089A1 |
Disclosed in the present invention are a plasma processing system and a multi-section Faraday shielding device thereof, the device comprising an electrically conductive ring and a plurality of electrically conductive petal-shaped assembl...
|
WO/2022/020193A1 |
A method of plasma processing includes generating plasma in a plasma processing chamber containing a first species, a second species, and a substrate. The plasma includes a plasma sheath, first species ions, and second species ions. The ...
|
WO/2022/018873A1 |
This DC high-voltage source device comprises a first voltage source including: a first variable DC voltage source; a second variable DC voltage source; a first switching circuit that generates an AC voltage from the DC voltage of the fir...
|
WO/2022/014008A1 |
The purpose of the present disclosure is to provide a technology for calculating a machine difference correction coefficient more efficiently with high accuracy. A defect inspection device according to the present disclosure calculates a...
|
WO/2022/015999A1 |
The disclosure describes apparatus and method for detecting an endpoint in plasmaassisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-as...
|
WO/2022/015614A1 |
A substrate support assembly includes a baseplate, a ceramic plate arranged on the baseplate, and a plurality of wires. The ceramic plate includes a plurality of slots arranged on a side facing the baseplate and a plurality of electrical...
|
WO/2022/013087A1 |
The invention relates to a device and a method for the outer-wall and/or inner-wall coating of hollow bodies (4) made of an electrically nonconductive material, in particular plastic bottles or canisters, in which the hollow body (4) is ...
|
WO/2022/013018A1 |
A voltage waveform generator for a plasma assisted processing apparatus comprises a common node, a voltage supply circuit operable to switch between at least two voltage levels at a first switch node, a first inductor connected between t...
|