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JP7335617B2 |
The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The ...
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JP2023116242A |
To efficiently reduce an irregularity of a processed material while suppressing a cost, irrespective of the processed material.An irregularity reduction method comprises: a holding step 1003 of holding a first processing material in a fi...
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JP2023116542A |
To properly cut a wafer.A crack advancing device for advancing a crack from a laser-modified region formed within a wafer comprises crack advancing means for advancing the crack by providing a water supply interruption state midway throu...
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JP2023108458A |
To provide an abrasive composition capable of improving a high polishing rate without using alumina particles and realizing good surface smoothness and a surface state without adhesion of residual abrasive grains and polishing dust.An ab...
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JP2023106084A |
To provide a chuck device capable of stably performing wafer flattening (that is, polishing or grinding) with the help of anodization.A chuck device (2) is configured to hold a wafer during the wafer (W) flattening with the help of anodi...
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JP2023103713A |
To polish a wafer so that the wafer has a uniform thickness, in polishing the wafer in which a difference in a thickness forming a cross section thereof into a wedge shape is generated.A wafer 10 in which a difference in a thickness is g...
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JP2023103840A |
To realize reduction of a process-affected layer in a planarizing process method of a surface of a semiconductor wafer using anodic oxidation.A surface processing method for planarizing a surface (W1) for a semiconductor wafer (W) includ...
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JP2023102923A |
To suction-hold a workpiece by a chuck table even when the warping force of the workpiece is large.Before a holding surface 22 of a chuck table 20 holds a wafer 100, a groove is formed on the wafer 100 and the warping force of the wafer ...
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JP7313968B2 |
To provide a processing method of a wafer, capable of solving a problem that it is difficult for a base wafer covered with a mold resin to be divided into individual package devices due to the curving of a base wafer.A processing method ...
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JP2023101222A |
To provide a method for manufacturing a semiconductor wafer that can efficiently process a semiconductor wafer with a small diameter and can be applied to a processor for a semiconductor wafer with a large diameter.The method for manufac...
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JP7306818B2 |
To provide a fine frog manufacturing method that can form fine frogs by forming multiple columns with pointed tips on a surface of a workpiece.A fine frog manufacturing method of the present invention is constituted of at least an aspect...
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JP2023098845A |
To provide methods for manufacturing a semiconductor structure that improve the wafer flatness by solving the problem with single side polishing methods often resulting in flatness worsened toward a wafer edge.In a method for manufacturi...
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JP7301610B2 |
To provide a technique that can appropriately set a reciprocation range of a grindstone when a grinding device performs chopping operation.When a chopping starting signal is turned ON from OFF (T1), origin-offset processing is performed ...
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JP7295412B2 |
To provide a method of accurately evaluating hydrogen embrittlement resistance, etc. of metal materials while minimizing intrusion of hydrogen during a polishing process.A metal material evaluation method is provided, comprising a polish...
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JP7292844B2 |
To provide a polishing composition used in a preliminary polishing step, which is a polishing composition capable of suppressing residue of abrasive grains on a polishing object, while achieving a polishing rate suitable for preliminary ...
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JP7292923B2 |
To provide a manufacturing method of a magnetic disk substrate having an improved edge shape while exhibiting good polishing performance.A manufacturing method of a magnetic disk substrate is provided. This manufacturing method includes ...
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JP2023083924A |
To provide a wafer generation method capable of reducing a processing defect by removing peeling chips which are generated in a case where a wafer is peeled from an ingot, and a wafer generation device.A wafer generation method includes:...
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JP2023083014A |
To manufacture a wafer having a predetermined thickness from works even when a work having a residual peeling layer and a work having no residual peeling layer are mixed.Even when a work is a normal work 800 having a first residual peel ...
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JP7290843B2 |
To provide a wafer processing apparatus and a wafer processing method for efficiently obtaining chips of stable quality.In a crack growth method using a grinding device that grows cracks from a laser modification region formed inside a w...
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JP2023081458A |
To provide a film lapping processing device and a film lapping processing method that are capable of polishing a screw groove in a work of a screw shape with high accuracy.A film lapping processing device 100 is a film lapping processing...
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JP2023079232A |
To provide a pipe end processing device that can continuously perform cutting of an end of a pipe and tapering of an outer circumference of the end of the pipe after the cutting, and can adjust a tapered dimension to a predetermined dime...
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JP2023077664A |
To provide a wafer processing method that can remove a chamfered part without generating cracks in a wafer and grind the rear face of the wafer to have a desired finished thickness.A wafer processing method includes: a groove forming ste...
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JP7281226B2 |
A semiconductor wafer is adhered and fixed to a polishing head by means of a conductive adhesive, and the wafer is connected to a positive electrode of an external power supply through wires of the inner and outer rings of a conductive s...
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JP2023071253A |
To reduce a grinding amount of a wafer after a division original point formation.A processing method for processing a single crystal silicon wafer, in which a device is formed in each region that is formed so as to expose each specific c...
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JP2023071254A |
To provide a method of manufacturing an SiC baseboard which can shorten a manufacturing lead time for an SiC baseboard and can reduce manufacturing costs.After grinding a surface side on which an Si surface is exposed and grinding a rear...
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JP2023065426A |
To provide a method of polishing a substrate in which a surface with high flatness and few defects can be achieved with high efficiency.A method of polishing a substrate includes a plurality of stock polishing sub-steps that is performed...
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JP7271086B2 |
To provide a wafer cutting apparatus and method for smoothly cutting a wafer.A grinding apparatus 1 includes: a grindstone 21 that grinds a wafer W having a modified layer RL formed therein; a vibrator 4 that vibrates the grindstone 21; ...
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JP7271085B2 |
To provide a wafer cutting apparatus and method for smoothly cutting a wafer.A grinding apparatus 1 includes: a grindstone 21 that grinds a wafer W in which a modified layer RL is formed; and a vibrator 4 that vibrates the grindstone 21....
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JP7271468B2 |
To provide a grinding method for a sapphire substrate capable of preventing pits from being generated on a surface.A grinding method for a sapphire substrate includes the steps of: holding a sapphire substrate 101 with an r-plane defined...
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JP7269076B2 |
The present invention provides a polishing process of a magnetic disk substrate, which reduces undulations, shallow pits, and sags on the surface of the substrate after the rough polishing step in the multi-stage polishing method. A poli...
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JP7266127B2 |
To achieve low-damage processing by eliminating a crack of a substrate surface layer part and peeling of an oxide film layer and adhesive layer or the like even in processing of forming a terrace shape on an upper surface layer side.A ch...
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JP2023516642A |
A high-efficiency low-damage machining method and machining apparatus, wherein the high-efficiency low-damage machining method comprises providing a workpiece (300) and a machining unit (400), ), wherein the predetermined machining speed...
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JP7259795B2 |
Provided is a production method of a SiC wafer which can increase the yield of a SiC wafer which can be prepared from a produced SiC single crystal ingot and the product yield of a semiconductor chip.In forming cylindrical column parts f...
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JP7258489B2 |
A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, ...
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JP2023050722A |
To provide a dressing method of a superabrasive grinding wheel which can apply sufficient dressing to the superabrasive grinding wheel which performs superabrasive grinding, and a device.In a diamond grinding piece arranged at a tip part...
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JP2023045178A |
To provide a long-life inexpensive abrasion resistant member high in abrasion resistance and applicable even to a large area.An abrasion resistant member 100 comprises: a base metal 10; and an abrasion resistant layer 20 having a flat fr...
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JP7244681B2 |
To prevent falling of a grind stone from a rotary shaft of a grinding spindle due to ultrasonic vibration in an ultrasonic tool which is fitted to the grinding spindle which is rotated at a high speed, and by which ultrasonic vibration i...
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JP7241434B2 |
Carbon atoms of a single-crystal diamond and active abrasives are used to produce a chemical reaction to form carbides under a specific grinding condition of no higher than a graphitization temperature, and a hard abrasive is used to rem...
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JP2023032894A |
To provide a GaN substrate surface processing method that can perform surface processing of a GaN substrate in a short time, and a GaN substrate manufacturing method.A GaN substrate surface processing method performs surface processing o...
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JP2023029446A |
To provide a wafer grinding method and a wafer grinding device capable of thinning a wafer to a finished thickness.A wafer grinding method includes a rough grinding step of rough grinding the back surface of a wafer by rough grinding mea...
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JP2023028797A |
To suppress dropping of relatively large offcuts when grinding a wafer.A wafer processing method for thinning a wafer having a chamfered portion on the outer periphery thereof to achieve a finished thickness includes a trimming step of c...
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JP7229621B1 |
It is an object of the present invention to provide a system and a program for maintaining the machining accuracy of a workpiece even when an abrasive material wears out. A system comprising at least one computer device, comprising stora...
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JP7221560B1 |
An object of the present invention is to provide a processed portion fixing structure that directly fixes a processed portion to a horn main body using a simple mechanical fixing structure. A processed part 11 is directly fixed to a horn...
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JP7217530B2 |
A displacement magnifying mechanism includes a base portion serving as a substrate; a first attachment portion and a second attachment portion which are provided on a surface on one side of the base portion; a first piezoelectric element...
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JP7217409B2 |
To provide a crack developing device and crack developing method, cutting a wafer formed with a modified region by laser beam therein.A crack developing method includes a step of developing cracking using crack developing means of changi...
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JP7206578B2 |
To provide a wafer grinding method and a wafer grinding device capable of thinning a wafer up to a finish thickness.A wafer grinding method includes a rough grinding step for roughly grinding a back side of the wafer by rough grinding me...
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JP7208019B2 |
To provide a polishing composition excellent in performance to cancel a bump around a periphery of a hard laser mark.Provided is a polishing composition containing an abrasive, a water-soluble polymer, a basic compound, and water, wherei...
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JP7204105B2 |
To provide a processing method and a processing device that can realize processing of high efficiency and high accuracy in dry polishing for processing GaN or Sic or the like.A processing device 1 includes: a processing table 2; a synthe...
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JP7201639B2 |
Letting a particle diameter be Dx (μm) when a cumulative particle volume cumulated from the small particle diameter side reaches x (%) of the total particle volume in a particle size distribution obtained regarding cerium oxide included...
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JP2023000987A |
To provide a method that can flatten a poorly dissolved area projecting from a material surface, improving the surface roughness.A composite rotary electrode means used in an electrical chemical process and a brushing polishing process c...
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