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WO/2023/242994A1 |
A semiconductor device (101) comprises: a nitride semiconductor layer (10) that has a first main surface (51), and a second main surface (52) on the reverse side from the first main surface (51); and a diamond layer (11) that has a third...
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WO/2023/245205A1 |
The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, an RRAM device includes: a first electrode including a metal nitride; a second electrode comprising a first conductive material; and a ...
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WO/2023/242991A1 |
The present disclosure relates to a power semiconductor device in which the main current flows in the thickness direction of a semiconductor substrate, wherein the semiconductor substrate has a first active region which is provided in th...
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WO/2023/243470A1 |
This wafer structure includes: a wafer having a first surface on one side and a second surface on the other side; a first electrode covering the first surface; a second electrode covering the inner part of the second surface such that a ...
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WO/2023/244489A1 |
Bifunctional graphene dielectrophoresis (DEP)-graphene field effect transistor (GFET) devices are provided. Aspects of the devices include: a graphene dielectrophoresis (DEP) component and a graphene field effect transistor (GFET) compon...
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WO/2023/241070A1 |
The present application relates to a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a first metal layer, which is arranged on a substrate; a dielectric layer, which is arranged on the side o...
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WO/2023/243245A1 |
In the present invention, a semiconductor device comprises a gallium-containing first nitride semiconductor layer, and a gallium-containing second nitride semiconductor layer that is formed on the first nitride semiconductor layer, the s...
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WO/2023/243073A1 |
In a transistor (1) according to the present disclosure, the quantity of boron ions (B+) that are implanted in a gate insulating film (5) is greater than the quantity of boron ions (B+) that are implanted in a first region (4b) and a sec...
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WO/2023/244954A1 |
A semiconductor device (200) is described herein. The semiconductor device comprises a silicon substrate layer (204). The semiconductor device comprises a first semiconductor layer comprising a gallium nitride layer (206), the first semi...
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WO/2023/243882A1 |
Disclosed are a silicon carbide based-lateral power semiconductor device, and a method for manufacturing same. The silicon carbide-based lateral power semiconductor device includes: a substrate of a first conductivity type made of silico...
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WO/2023/242953A1 |
The present disclosure pertains to a semiconductor device and a method for manufacturing same, and the purpose of the present disclosure is to provide a semiconductor device and a method for manufacturing same, with which the outermost s...
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WO/2023/243556A1 |
A field effect transistor (10) according to the present invention is provided with: an electron transit layer (26); an electron supply layer (28) which is arranged on the electron transit layer so as to generate a two-dimensional electro...
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WO/2023/241925A1 |
A microelectronic structure including a stacked transistor having a lower transistor (112) and an upper transistor (127). A shared contact (230) in contact with a lower source/drain (160) of the first lower transistor and an upper source...
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WO/2023/241593A1 |
The embodiments of the present application relate to the technical field of semiconductors. Provided are a radio frequency semiconductor device, an electronic device, and a preparation method for a radio frequency semiconductor device. A...
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WO/2023/244222A1 |
A double-channel semiconductor device is presented herein. The double-channel semiconductor device is a cascode solution integrating two semiconductor channels: a HEMT channel (104) and a thin film transistor (TFT) channel (216). The HEM...
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WO/2023/242664A1 |
Provided is a semiconductor device having favorable electrical characteristics. This semiconductor device has: a first layered body; a semiconductor layer having a channel-forming region under the first layered body; and a second layered...
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WO/2023/241586A1 |
A display substrate and a preparation method therefor, and a display panel. The display substrate comprises: a base substrate (21); a metal conductive layer, which is located on one side of the base substrate (21) and comprises a plurali...
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WO/2023/236373A1 |
Disclosed herein are a thin-film transistor and a preparation method therefor, and a memory and a display. The thin-film transistor comprises a first source/drain layer (1); a second source/drain layer (3); an insulating layer (2), which...
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WO/2023/240020A1 |
A transistor device includes a semiconductor structure comprising a channel layer and a barrier layer, source and drain contacts on the semiconductor structure, and a conductive element in a recess in the barrier layer between the source...
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WO/2023/237561A1 |
The present invention provides a graphene-containing laminate comprising, in order: a substrate; a graphene layer structure; a first metal oxide layer formed of a first metal oxide, wherein the first metal oxide is a transition metal oxi...
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WO/2023/236375A1 |
Disclosed are a thin-film transistor and a preparation method therefor, and a memory and a display. The thin-film transistor comprises: a second source/drain layer (2), an insulation layer (3) and a first source/drain layer (1), which ar...
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WO/2023/236272A1 |
Disclosed in the embodiments of the present disclosure are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a substrate, first gate electrode structures and second gate electrode struct...
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WO/2023/237961A1 |
This semiconductor device (200) includes: an oxide (230) on a substrate; a first conductor (242a1) and a second conductor (242b1) that are on the oxide and are separated from each other; a third conductor (242a2) that is in contact with ...
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WO/2023/238745A1 |
A nitride semiconductor device according to the present invention comprises: a gate layer which is formed on a part of an electron supply layer with use of a nitride semiconductor that contains an acceptor impurity; a gate electrode whic...
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WO/2023/236360A1 |
Disclosed in the present disclosure are a transistor device and a memory. The transistor device comprises: a gate; a semiconductor channel, which surrounds a surface of the gate, wherein the semiconductor channel comprises a multi-layer ...
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WO/2023/236268A1 |
A bit breakdown condition determining method and device. The method comprises: determining a plurality of first breakdown conditions (S101); breaking down, according to each first breakdown condition, a corresponding first bit respective...
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WO/2023/238755A1 |
The present invention provides a field effect transistor 1 which is provided with: an n-type first semiconductor layer 10 that is formed of a gallium oxide semiconductor; a second semiconductor layer 11 that is formed of Si and is arrang...
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WO/2023/236374A1 |
A thin film transistor and a preparation method therefor, a memory, and a display. The thin film transistor comprises: a first source/drain layer (1), a first insulating layer (2), a second source/drain layer (3) and a second insulating ...
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WO/2023/239942A1 |
We provide a fabrication process for Ill-nitride devices. An iridium structure is deposited and then oxidized at high temperature (700 °C or more) to form an iridium oxide Schottky contact to a III-nitride. This IrOx contact is then pro...
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WO/2023/238521A1 |
A thin-film transistor (10) includes: an oxide semiconductor layer (140) provided on a substrate (100) and having a polycrystalline structure; a gate electrode (160) provided on the oxide semiconductor layer; and a gate insulation layer ...
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WO/2023/238852A1 |
This nitride semiconductor device comprises: a substrate; a first nitride semiconductor layer formed above the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer, and having a larger band gap ...
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WO/2023/237001A1 |
The present application provides a semiconductor device and electronic equipment. The semiconductor device comprises a substrate and a plurality of structural units; the plurality of structural units are all provided on one side of the s...
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WO/2023/236265A1 |
Disclosed in the embodiments of the present disclosure are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a substrate, first gate electrode structures, second gate electrode structure...
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WO/2023/239427A1 |
A number of Monolithic Microwave Integrated Circuit (MMIC) devices including combinations of PIN and Schottky diodes, with integrated passive electrical components fabricated and electrically connected among them, are described herein, a...
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WO/2023/102324A9 |
A power semiconductor device includes semiconductor layer structure comprising a semiconductor drift region of a first conductivity type and an edge termination region comprising a plurality of guard rings of a second conductivity type. ...
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WO/2023/239666A1 |
A transistor device according to some embodiments includes a semiconductor barrier layer, a surface dielectric layer on the semiconductor barrier layer, and a gate on the surface dielectric layer. The surface dielectric layer includes an...
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WO/2023/238370A1 |
The present invention is characterized in that, in a dynamic flash memory having a semiconductor parent p layer 1, an n+ layer 2 that is extended to one side, an n+ layer 3 that is adjacent to the p layer 1 on the opposite side, a first ...
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WO/2023/239181A1 |
The present invention relates to a high-mobility driving element and a method for manufacturing same, the high-mobility driving element comprising: a substrate; an insulating film disposed on the substrate; a channel layer disposed on at...
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WO/2023/237064A1 |
Disclosed in the present application is a four-pin TO-247 encapsulation structure for a power gallium nitride HEMT device. The encapsulation structure comprises: a conductive chip holder; a planar gallium nitride HEMT chip, which is fixe...
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WO/2023/236270A1 |
Disclosed are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate, a gate structure, a capping layer, and a first sacrificial structure. The substrate comprises separate semic...
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WO/2023/238477A1 |
Provided is a nitride semiconductor device capable of enhancing the device characteristics. This nitride semiconductor device is a ternary nitride semiconductor and comprises a polarization doped layer having a first conductive-type char...
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WO/2023/236376A1 |
Disclosed herein are a field-effect transistor and a preparation method therefor, and a memory and a display. The field-effect transistor comprises: a first source/drain layer (1), an insulating layer (2) and a second source/drain layer ...
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WO/2023/236523A1 |
An enhanced integrated structure of N-channel and P-channel GaN devices. The enhanced integrated structure comprises a substrate, wherein an aluminum-nitrogen nucleating layer, an aluminum-nitrogen-gallium buffer layer, a gallium nitride...
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WO/2023/236159A1 |
Embodiments of the present application relate to the technical field of semiconductors, and provide a chip packaging structure and a preparation method therefor, and an electronic device for improving the setting of fan-out wires in a ch...
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WO/2023/239133A1 |
The present invention relates to: a fluorinated amorphous carbon thin film having a high dielectric constant, a low leakage current and a high dielectric strength so as to be useful in the manufacture of a highly integrated device; a man...
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WO/2023/236359A1 |
Disclosed are a transistor device and a memory. The transistor device comprises: a gate; a gate insulating layer, covering the surface of the gate; a semiconductor channel, covering the surface of the gate insulating layer away from the ...
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WO/2023/239986A1 |
In a general aspect, a diode (100, 200) includes a substrate (102, 202) and a semiconductor layer (104, 204) of a first conductivity type disposed on the substrate and including a drift region (120, 220); a shield region (110a, 110b, 210...
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WO/2023/238691A1 |
This nonvolatile storage device comprises a plurality of nonvolatile storage elements, wherein: the nonvolatile storage elements each comprise a semiconductor layer including a metal oxide, a gate electrode facing the semiconductor layer...
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WO/2023/238746A1 |
A semiconductor device according to the present invention comprises: a metal oxide layer provided on an insulating surface and having aluminum as a main component; an oxide semiconductor layer provided on the metal oxide layer; a gate el...
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WO/2023/239182A1 |
The present invention relates to a driving device and a method for manufacturing same, the driving device comprising: a substrate; an insulating layer positioned on the substrate; a channel layer positioned on at least a portion of the i...
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