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WO/2012/120871A1 |
Provided is a semiconductor substrate that has: a base substrate, the surface of which is entirely or partially formed of a silicon crystal plane; an inhibitor, which is positioned on the base substrate, has an opening that reaches the s...
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WO/2012/120940A1 |
Provided is a current sensor having a wide dynamic range, low magnetic hysteresis, and high current detection precision. The current sensor is provided with magnetic-resistance effect elements (12a, 12b), and is characterized in that eac...
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WO/2012/121230A1 |
Provided is a new spin current source regarding an acoustic wave to spin current conversion element. An acoustic wave generation member, a magnetic substance member which generates a spin current by an acoustic wave from the acoustic wav...
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WO/2012/117212A2 |
The invention relates to a magnetic device comprising at least one memory point (1) comprising: a reference layer (2) having a variable magnetising direction; a storage layer (3) having a variable magnetising direction; a spacer (4) betw...
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WO/2012/116660A1 |
An individually packaged magnetoresistance angle sensor (20) for use in measuring angles in a magnetic field. The magnetoresistance angle sensor (20) comprises a pair of magnetoresistance sensor films (61, 62), wherein one of the films i...
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WO/2012/116659A1 |
An independently packaged bridge-type magnetic-field angle sensor comprising a pair of half-bridge MTJ sensing elements rotated relative to each other by 90 degrees, said elements being used for measuring two magnetic field components in...
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WO/2012/117784A1 |
Provided is a current sensor, which has excellent operation stability at a high temperature, and high measurement accuracy. A current sensor (1) of the present invention is characterized in being provided with: a conductive body (13), wh...
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WO/2012/115787A1 |
A circular vertical Hall (CVH) sensing element and an associated method provide a plurality of output signals from a respective plurality of vertical Hall elements in the CVH sensing element at the same time.
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WO/2012/112619A1 |
Methods and apparatus for shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device,...
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WO/2012/096211A1 |
Provided is a current sensor which can accurately measure current over a wide range and which can also be reduced in size. This current sensor (1) is characterized by including a substrate (11), a conductor (13) which is provided above t...
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WO/2012/096132A1 |
[Problem] To provide a magnetic sensor having improved high-field magnetoresistance. [Solution] A magnetic sensor in the embodiment of the present invention has a plurality of element sections (9), bias layers (10) disposed on both the s...
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WO/2012/093701A1 |
Provided is a non-volatile logic operation element (1000) which can operate at room temperature and can construct a non-volatile logic operation circuit provided with both a logic element and memory. The non-volatile logic operation elem...
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WO/2012/093556A1 |
The purpose of the present invention is to improve adhesion between a resist frame and an underlying layer, and to increase the measurement range for measured currents. The magnetic-balance current sensor of the present invention compris...
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WO/2012/093587A1 |
Provided is a Heusler alloy which is Co2Fe(GaxGex-1) and satisfies 0.25 < X < 0.60, has a spin polarization rate as determined by PCAR of 0.65 or greater, and reaches a Curie point of 1,288 K. A CPP-GMR element that uses this Heusler all...
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WO/2012/090474A1 |
The present invention provides a laminate having a magnetic film, a method for producing the laminate and a method for processing a magnetic film, wherein an Si compound deposited on the side wall or bottom of an underlayer is removed wh...
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WO/2012/090395A1 |
The present invention provides a manufacturing apparatus, which can perform so-called sequential substrate transfer, even if there are a plurality of layers formed of a same kind of film in one multilayer thin film, and which can improve...
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WO/2012/086183A1 |
[Problem] To provide a method for producing a perpendicular magnetization magnetic element, the method not involving an MgO film formation step. [Solution] The method for producing a magnetoresistance element (1) of the present invention...
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WO/2012/087551A1 |
A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a...
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WO/2012/082998A1 |
A magnetic sensor has a bottom shield layer, an upper shield layer, and a sensor stack adjacent the upper shield layer. The sensor includes a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack. ...
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WO/2012/081377A1 |
Provided is a magnetic sensor and a method of manufacturing the magnetic sensor, wherein dispersion in the magnetization direction of a free magnetic layer of a magneto-resistance effect element can be reduced, and wherein measurement pr...
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WO/2012/081453A1 |
A magnetoresistive element (10) in each of the memory cells (100) of the present invention has a first lower terminal (n1) and a second lower terminal (n2), which are connected to both the ends of a conductive layer (3), which has the lo...
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WO/2012/081694A1 |
Provided is technology for high-quality epitaxial growth of a group IV semiconductor (111) surface on a ferromagnetic Heusler alloy (111) surface. This method for forming a spin conductance structure includes: a first ferromagnetic lamin...
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WO/2012/077518A1 |
[Problem] To provide a perovskite manganese oxide thin film that: (1) is capable of primary phase transition; and (2) is ordered at the A site. [Solution] The present invention provides a perovskite manganese oxide thin film (2) that inc...
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WO/2012/077517A1 |
[Problem] To increase the transition temperature of a perovskite manganese oxide thin film to above that of the bulk thereof. [Solution] An embodiment of the present invention provides a perovskite manganese oxide thin film (2) which is ...
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WO/2012/074537A1 |
A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a barrier layer, a free layer, and a magnesium (Mg...
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WO/2012/060181A1 |
The present invention provides a current sensor with high measurement accuracy that can decrease hysteresis and parasitic resistance of a magnetoresistive effect element. This current sensor (1) includes a magnetoresistive effect element...
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WO/2012/056087A1 |
In one embodiment, an apparatus comprises a nano-scale spectrum sensor configured to be electromagnetically excitable at a predetermined frequency based on received ambient electromagnetic radiation. The apparatus is also configured to b...
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WO/2012/042178A1 |
The invention relates to a magnetic device having heat-assisted writing, comprising a first magnetic layer referred to as the "reference layer" (3), a second magnetic layer referred to as the "storage layer" (5) which has a variable dire...
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WO/2012/036282A1 |
This magnetoresistive element comprises: a first ferromagnetic layer (12) having variable magnetization substantially perpendicular to a film surface; a second ferromagnetic layer (16) having invariable magnetization substantially perpen...
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WO/2012/033571A1 |
A nano-oscillator magnetic wave propagation system has a group of aggregated spin-torque nano-oscillators (ASTNOs), which share a magnetic propagation material. Each of the group of ASTNOs is disposed about an emanating point in the magn...
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WO/2012/028664A1 |
The invention relates to a magnetic device comprising a reference layer (2), the magnetization direction of which is fixed, and a storage layer, (3), the magnetization direction of which is variable. In a write mode, the magnetization di...
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WO/2012/027861A1 |
The disclosed subject matter relates to a non- volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or "dot". For appropriate geometry and dimensions of the dot, a two-f...
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WO/2012/025841A1 |
The invention relates to: a method for preparing a surface of a GaAs substrate (001) such that it can receive a ferromagnetic semiconductor deposited by epitaxy, a substrate thus prepared, a method for manufacturing one such semiconducto...
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WO/2012/023157A1 |
A magnetoresistance element comprises: a first magnetoresistance element portion having a structure in which a first tunnel insulating layer is sandwiched between a first free magnetic layer and a first pinned magnetic layer, wherein the...
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WO/2012/023252A1 |
This magnetic tunnel junction element comprises a first ferromagnetic layer, a second ferromagnetic layer, and an insulting layer that is provided between the first ferromagnetic layer and the second ferromagnetic layer. The insulating l...
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WO/2012/021297A1 |
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pin...
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WO/2012/014132A1 |
The invention relates to a writeable magnetic element, comprising a stack of layers having a magnetic writing layer, characterised in that the stack comprises a central layer (13, 53, 90) made of at least one magnetic material having a d...
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WO/2012/014376A1 |
A microcomputer (19) for detecting a magnetic field is provided with: a magnetic field detecting element (10); a differential amplifier (11); a variable voltage circuit (13), which generates a variable reference voltage; a comparator (12...
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WO/2012/014415A1 |
A spin injection element including: a first ferromagnetic film which contains at least one element selected from among Co, Fe, Ni and B and which has a body-centered cubic structure; a first seed film provided on the first ferromagnetic ...
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WO/2012/010319A1 |
The invention relates to a method for producing TMR components, characterized by a two-stage etching process in which the individual layers of the TMR layer stack are structured in two consecutive steps. According to the invention, the T...
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WO/2012/011161A1 |
Disclosed is a semiconductor storage device which comprises: a memory cell array in which memory cells are arranged in a matrix form; and a reference resistance circuit that produces a reference resistance. A memory cell has a date stora...
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WO/2012/009524A2 |
A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinn...
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WO/2012/008349A1 |
Disclosed is a multi-value high-capacity low-power-consumption non-volatile memory. It is made possible to record three-valued recording information by arranging a first tunnel magnetic resistance element (300) and a second tunnel magnet...
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WO/2012/004882A1 |
Disclosed is a magnetic random access memory for spin torque magnetization reversal applications, which is thermally stable during reading and has a reduced current during writing. A permanent magnet layer (504, 510) having magnetization...
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WO/2012/004883A1 |
Provided is a magnetoresistive effect element showing a low write current density while maintaining a high TMR ratio. A recording layer has a stacked-layer structure of a second ferromagnetic layer, a nonmagnetic layer, and a first ferro...
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WO/2012/001555A1 |
The Magnetic Random Access Memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells being interconnected via the read word lines, the write word lines and the bit lines, each of the memor...
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WO/2012/002156A1 |
Disclosed is a perpendicular domain wall motion MRAM in which the magnetization in both ends of a magnetization free layer is fixed by magnetization fixed layers, wherein prevention of an increase in write current caused by magnetic fiel...
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WO/2011/155390A1 |
Disclosed is an oscillation element wherein a magnetoresistive element provided with a tunnel barrier layer achieves both the high oscillation output and high Q value. Also disclosed is a method for manufacturing the oscillation element....
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WO/2011/152281A1 |
Disclosed are a magnetoresistance effect element, the direction of magnetization whereof is stable in the direction that is perpendicular to the film plane, magnetoresistance change rates therein are controlled, and writing thereto by do...
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WO/2011/152400A1 |
Disclosed are a magnetoresistance effect element, the direction of magnetization whereof is stable in the direction that is perpendicular to the film plane, and magnetoresistance change rates therein are controlled; and a magnetic memory...
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