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WO/2016/148393A1 |
Disclosed is a memory device in which a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a composite interchange diamagnetic layer, and an upper electrode are stacked on a substrate, wherein the...
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WO/2016/148391A1 |
Disclosed is a memory device in which a lower electrode, a seed layer, a magnetic tunnel junction, a capping layer, a composite interchange diamagnetic layer, and an upper electrode are stacked on a substrate, wherein the seed layer has ...
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WO/2016/143594A1 |
A method according to an embodiment of the present invention comprises a step for mounting, on an electrostatic chuck provided in a process chamber of a plasma processing apparatus, a workpiece having a magnetic layer, and a step for gen...
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WO/2016/143157A1 |
A magnetic memory is provided with: a deformable substrate; a spin device element which is joined to the deformable substrate and which stores data in the form of a magnetization direction; and a bending mechanism for bending the deforma...
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WO/2016/143383A1 |
To improve performance of a memory cell that stores therein values corresponding to the current directions. This memory cell is provided with an N-type transistor, a P-type transistor, and a storage element. The N-type transistor supplie...
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WO/2016/140113A1 |
A magnetic-material sputtering target according to the present invention is characterized by: being formed of a sintered body containing, at least, B, Co and/or Fe, the content of B being 10 to 50 at%; and having an oxygen content of 100...
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WO/2016/139878A1 |
[Problem] To provide a storage element having both high information holding characteristics and low power consumption. [Solution] The storage element comprises a fixed layer, a storage layer, an intermediate layer, and a heating layer. T...
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WO/2016/139879A1 |
Provided are: a storage element wherein variation in inversion timing for spin torque inversion is suppressed effectively, thereby enabling a stable high-speed operation; a production method therefor; and a storage device. The storage el...
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WO/2016/137730A1 |
Magnetic random access memory (MRAM) bit cells (200) employing source lines (204) and/or bit lines (206) disposed in multiple, stacked metal layers to reduce MRAM bit cell resistance are disclosed. Related methods and systems are also di...
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WO/2016/137171A1 |
The present invention relates to a multilayer magnetic thin film stack and a non-volatile memory device using a magnetic tunneling junction (MTJ). A multilayer magnetic thin film stack according to an embodiment of the present invention ...
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WO/2016/137669A1 |
A semiconductor device includes a resistive memory device bottom electrode (118, 120) formed on an interconnect (104, 108). The bottom electrode comprised of cobalt tungsten phosphorus (CoWP), preferably formed by electroless deposition,...
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WO/2016/136190A1 |
Because a spin current-electrical current conversion structure using a material containing a 5d transition metal has low efficiency of spin current-electrical current conversion, the spin current-electrical current conversion structure a...
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WO/2016/131565A1 |
The invention relates to a method for producing a Hall effect sensor, wherein first of all an insulating layer (20) is applied to a wafer (10) having an ASIC or is integrated into the wafer, a Hall effect layer (30), consisting for examp...
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WO/2016/129288A1 |
The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. This sensor device (100) is provided with: a semiconductor substrate (101); a first metal wiring layer (111) that is provided ...
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WO/2016/125200A1 |
According to one embodiment of the present invention, a method for manufacturing a perpendicular magnetization type MTJ element is provided, said perpendicular magnetization type MTJ element having a first laminated structure including a...
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WO/2016/126750A1 |
A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first e...
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WO/2016/125780A1 |
Provided is a magnetic measuring device in which the influence of a magnetic field generated by a sense current is reduced. A magnetic measuring device (10) is provided with: magnetic resistance elements (1); upper wiring layers (2) that...
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WO/2016/122811A1 |
A semiconductor device (100) includes a first magnetic tunnel junction (MTJ) device (122), a second MTJ device (123), and a top electrode (110). The first MTJ device includes a barrier layer (140). The second MTJ device includes the barr...
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WO/2016/122402A1 |
According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a variable magnetization orientation, a fixed magnetic layer structure ...
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WO/2016/117882A1 |
The present invention relates to an electronic component comprising magnetic nanoparticles, and a manufacturing method thereof. An electronic component comprising magnetic nanoparticles, and a manufacturing method thereof, according to t...
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WO/2016/117853A1 |
An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on ...
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WO/2016/117359A1 |
Provided is a method for forming a perpendicular magnetization type magnetic tunnel junction element. This method comprises: a step for forming a tunnel barrier layer on a first magnetic layer of a body to be processed; a step for coolin...
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WO/2016/117664A1 |
A magnetoresistance effect element (10) is provided with the following: a reference layer (12) which is made of a ferromagnetic material, and the direction of magnetization of which is oriented toward a film surface direction; a recordin...
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WO/2016/114900A1 |
A semiconductor device comprises an array of magnetic cell structures each comprising a magnetic tunnel junction over an electrode on a substrate. Each of the magnetic tunnel junctions includes a magnetic material over the substrate, a f...
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WO/2016/113618A1 |
The present disclosure concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of MLU cells (1), each MLU cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) havi...
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WO/2016/105407A1 |
Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precurso...
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WO/2016/105849A1 |
One aspect of the present description provides for automatically erasing at least a portion of a memory such as a nonvolatile memory, for example, of a device in response to a detected event such as a power shutdown or power-up process, ...
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WO/2016/105436A1 |
An apparatus including a spin to charge conversion node; and a charge to spin conversion node, wherein an input to the spin to charge conversion node produces an output at the charge to spin conversion node. An apparatus including a magn...
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WO/2016/105665A1 |
A material stack of a synthetic anti-ferromagnetic (SAF) reference layer (601) of a perpendicular magnetic tunnel junction (MTJ) (600) may include an SAF coupling layer (606). The material stack may also include and an amorphous spacer l...
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WO/2016/099515A1 |
Described is an interconnect which comprises: a first end having a ferromagnetic layer coupled to a first magnetoelectric material layer; and a second end having a second magnetoelectric material layer coupled to the ferromagnetic layer,...
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WO/2016/099516A1 |
Described is a method comprising: forming a magnet on a substrate or a template, the magnet having an interface; and forming a first layer of non-magnet conductive material on the interface of the magnet such that the magnet and the laye...
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WO/2016/094048A1 |
A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A no...
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WO/2016/089682A1 |
A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The mag...
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WO/2016/089535A1 |
An apparatus (100) includes a capping layer (108) disposed on top of a free layer (106). The apparatus also includes a magnetic etch stop layer (110) disposed on top of the capping layer. The capping layer and the magnetic etch stop laye...
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WO/2016/084127A1 |
This magnetic sensor is configured from: (1) a ferromagnetic insulator; (2) a spin wave generation unit, which has a first non-magnetic insulator laminated in a first region of the ferromagnetic insulator, a first ferromagnetic metal lam...
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WO/2016/080273A1 |
[Problem] Embodiments of the present invention provide: a magnetoresistive effect element which is able to be reduced in leakage magnetic field; and a magnetic memory which uses this magnetoresistive effect element. [Solution] A magnetor...
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WO/2016/078793A1 |
The invention relates to a method and an apparatus for permanently magnetizing at least one ferromagnetic layer in a magnetic sensor device (10) applied to a chip substrate (12). Said method comprises the steps of: - producing at least o...
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WO/2016/080146A1 |
This semiconductor device is provided with: a flip flop circuit which has an annular structure wherein a first inverter circuit, a first connection line comprising a first node, a second inverter circuit, and a second connection line com...
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WO/2016/080470A1 |
This magnetic sensor is provided with: a substrate, two magnetoresistance effect elements which are connected to a power source terminal and have the same magnetosensitive direction; two magnetoresistance effect elements which are connec...
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WO/2016/080373A1 |
[Problem] To provide a magneto-resistive device and a magnetic memory, which are capable of reducing the effects of elements contained in an underlying layer being diffused even when a memory layer is made thin. [Solution] This magneto-r...
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WO/2016/075763A1 |
The purpose of the disclosed invention is to provide a magnetic sensor that comprises a ferromagnetic thin film formed on a substrate and is capable of detecting a magnetic field in a direction perpendicular to the surface without signif...
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WO/2016/071319A1 |
A majority gate device is disclosed comprising a free ferromagnetic layer (102) comprising 3N input zones (121, 122, 123) and one polygon output zone (124) having 3N sides, each input zone adjoining the output zone and being positioned a...
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WO/2016/072162A1 |
The present invention provides a magnetic element capable of generating skyrmions, and a skyrmion memory and the like that use the magnetic element. Provided is a magnetic element that has a chiral magnetic body and is designed to genera...
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WO/2016/073173A1 |
A magnetoresistive random access memory (MRAM) device includes a top electrode or top contact (134) above a metal hard mask (132) which has a limited height due to process limitations in advanced nodes. The metal hard mask (132) is provi...
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WO/2016/071370A1 |
A semiconductor chip (100) for measuring a magnetic field comprises a magnetic sensing element (110) which is mounted on, and connected with, an electronic circuit (120). The electronic circuit is produced in a first technology and/or fi...
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WO/2016/069088A1 |
Embodiments of the present disclosure are directed toward techniques and configurations for a magnetic MEMS apparatus that in some instances may comprise a magnetic circuit and a MEMS device. The magnetic circuit may include two magnets ...
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WO/2016/068183A1 |
The purpose of the present invention is to provide a ruthenium removal composition that can dissolve Ru while suppressing the dissolution of CoFeB. The purpose of the present invention is also to provide a magnetoresistive random access ...
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WO/2016/068182A1 |
The purpose of the present invention is to provide an MRAM dry etching residue removal composition that, in an MRAM production process, can remove dry etching residue while suppressing damage to a substrate that contains a specific metal...
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WO/2016/067744A1 |
Provided are a magnetic device that is capable of transferring a skyrmion and a skyrmion memory/shift register to which the magnetic device is applied. For example, the magnetic device is capable of transferring a skyrmion, utilizes a ho...
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WO/2016/063510A1 |
The present invention pertains to a Hall element having an excellent S/N ratio. This invention is provided with a substrate (100), a first electrode (22a) and a second electrode (23a) disposed on the substrate, a third electrode (22b) di...
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