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WO/2014/059083A2 |
A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed laye...
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WO/2014/057734A1 |
The present invention addresses the problem of inhibiting the evolution of a poisoning gas to eliminate wiring-pattern resolution failures and thereby forming a desired wiring layer structure to provide functional elements having an impr...
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WO/2014/049935A1 |
There is provided a storage element including a layered construction including a storage layer that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to inform...
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WO/2014/050380A1 |
Provided are a storage element for which TMR characteristics can be improved, a storage device equipped with the storage element, and a magnetic head. The storage element has a layer structure including a storage layer in which the magne...
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WO/2014/051943A1 |
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrie...
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WO/2014/050379A1 |
Provided are a storage element capable of adjusting the magnetic characteristics of a magnetization fixed layer, and a storage device and a magnetic head equipped with the storage element. The storage element has a layer structure includ...
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WO/2014/043466A1 |
An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer (21) between the storage (20) and cap (41) layers, improved PMA properties are obtained, increasing the potential fo...
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WO/2014/039565A1 |
A one time programmable (OPT) and multiple time programmable (MTP) structure is constructed in a back end of line (BEOL) process using only one, two or three masks. The OTP/MTP structure can be programmed in one of three states, a prepro...
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WO/2014/038015A1 |
Provided is a compact and ultra-low power-consuming field-programmable gate array (FPGA) that makes use of a spin wave waveguide and a spin wave calculation circuit. By laminating two ferromagnetic wires on a substrate, disposing an elec...
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WO/2014/036101A1 |
A magnetic thin film deposition is patterned and protected from oxidation during subsequent processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN. The SiN layer is then itself protected during the p...
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WO/2014/034639A1 |
Provided is a magnetic multilayer film comprising a non-magnetic layer containing a magnesium oxide of polycrystals or single crystals of which the (001) crystal plane is the preferred orientation, an oxide layer containing a very thin 3...
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WO/2014/036510A1 |
A circuit element includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in th...
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WO/2014/025914A1 |
A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistanc...
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WO/2014/024358A1 |
The present invention provides a TMR element manufacturing apparatus which is capable of reducing the contamination of a magnetic film with impurities. A tunnel magnetoresistive element manufacturing apparatus according to one embodiment...
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WO/2014/024012A1 |
Embodiments of intrinsic magneto-thermoelectric transport in MTJs carrying a tunneling current / in the absence of external heat sources are presented. In one embodiment Ohm's law for describing MTJs may be revised even in the linear tra...
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WO/2014/018920A1 |
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited betwe...
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WO/2014/012624A1 |
The invention relates to a spintronic circuit (10; 11; 15) comprising : a conductive non-magnetic channel (1); - means (2, NM, FM1-FM3) for generating spin polarized electrons (4) in the non-magnetic channel (1) by spin extraction; at le...
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WO/2014/011950A1 |
A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, resp...
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WO/2014/006898A1 |
In a magnetic sensor (10), a pin layer (15) covers a wiring layer (14) from the side opposite to a substrate (11) with respect to the wiring layer (14), and the pin layer has a bent portion (15A) having a bent cross-section. Free layers ...
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WO/2014/002387A1 |
The present invention pertains to a Hall electromotive force correction device and Hall electromotive force correction method for highly accurately correcting the magnetic sensitivity of a Hall element by correcting the stress and correc...
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WO/2013/190924A1 |
This semiconductor device includes: a first magnetic layer (1) that is arranged on a flat substrate surface; and a second magnetic layer (3) that is arranged above the first magnetic layer (1) and is magnetically coupled with the first m...
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WO/2013/190950A1 |
A magnetic sensor (1) composed of a series circuit (9) in which first and second magnetoresistive elements (R1, R2) are connected in series. A power source voltage (Vcc) is applied to the series circuit (9). The first magnetoresistive el...
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WO/2013/187193A1 |
The present invention is configured as a non-volatile logic gate element, having as one storage structure a resistor network in which at least three or more non-volatile resistor elements are connected, comprising: a reference resistor n...
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WO/2013/179575A1 |
[Problem] To provide a processing apparatus and processing method for stabilizing the resistance value of metal oxide film between substrates when a metal oxide film is formed on a substrate. [Solution] A target (31a) composed of a membe...
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WO/2013/179574A1 |
[Problem] To provide a technique by which high-processing efficiency can be obtained when a layered film, in which eight or more layers of a metal layer and a metal oxide layer are layered together, is manufactured. [Solution] A pluralit...
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WO/2013/180277A1 |
Provided is an oscillator provided with a function enabling high frequency oscillation, a high Q value, and high heat stability through the use of a magnetic-vortex structure and interlayer exchange coupling. The present invention is pro...
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WO/2013/171947A1 |
[Problem] To achieve a storage device that can operate at a higher speed with less current while reductions in the amplitude of readout signals are suppressed. [Solution] A storage device includes a storage element, a wiring section, and...
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WO/2013/171977A1 |
To provide a magnetic sensor having a large magnetic field detection angle range and a bridge circuit used in said magnetic sensor, each of multiple MR elements of the bridge circuit is connected so as to be successively folded back, wit...
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WO/2013/170070A2 |
Spin transistors and related memory, memory systems, and methods are disclosed. A spin transistor is provided by at least two magnetic tunnel junctions (MTJs) with a shared multiferroic layer. The multiferroic layer is formed from a piez...
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WO/2013/161769A1 |
A plasma processing method uses a plasma processing apparatus (10), that is provided with a processing vessel (12) that defines a processing space (S) in which a plasma is generated and a gas supply unit (44) that supplies process gas to...
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WO/2013/153942A1 |
[Object] Provided is a magneto-resistance effect element that has high thermal stability in a recording layer which performs perpendicular magnetic recording in a film surface, and a magnetic memory using the magneto-resistance effect el...
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WO/2013/153986A1 |
The purpose of the present invention is to detect stably and with good sensitivity the magnetic pattern of an object of detection in a contactless state in which the object of detection having the magnetic pattern is caused to be separat...
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WO/2013/140984A1 |
A Hall sensor readily produced and capable of readily removing off-set voltage, without increasing chip size, by arranging a magnetically sensitive receptor comprising a square or cross-shaped n-type impurity region, and a control curren...
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WO/2013/140677A1 |
Provided is a thin film or a laminate, which undergoes phase transition through mott transition at room temperature to exhibit a switching function. In one embodiment of the present invention, a perovskite-type manganese oxide thin film ...
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WO/2013/141337A1 |
Provided are an element structure in which a magnetic layer has a high magnetic anisotropic constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC me...
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WO/2013/140985A1 |
A Hall sensor readily produced and capable of readily removing off-set voltage, without increasing chip size, as a result of having a magnetically sensitive receptor for a square or cross-shaped second n-type impurity region, and a contr...
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WO/2013/141124A1 |
A magnetic sensor device comprises: a thin-film first magnetic body provided with a magnetic path merging and dividing part disposed on a predetermined axis, and at least a pair of wing-shaped parts extended from the magnetic path mergin...
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WO/2013/127722A1 |
The invention relates to a method for producing a magnetostrictive component, having the following step: coating a component main part with a magnetostrictive material. The invention further relates to a magnetostrictive component with a...
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WO/2013/129103A1 |
Provided is a Hall element having little variation in characteristics of a generated Hall voltage. The Hall element includes an n-type well (6) square in plan and provided on a p-type substrate (7), an insulating film (5) provided on the...
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WO/2013/129214A1 |
A magnetism detector (11) is provided with a magnetism sensor (1) and an amplifier (2). The magnetism sensor (1) is provided with a resistance voltage divider circuit that includes a magnetoresistive element (R1) and has an input termina...
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WO/2013/121661A1 |
Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate...
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WO/2013/121660A1 |
Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate...
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WO/2013/121870A1 |
A magnetic sensor apparatus (101) is provided with a magnetic sensor (100), and a yoke (20). The magnetic sensor (100) is provided with a magnetoresistive element (30), a magnet (10), and an inner holder (18C), which has the magnetoresis...
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WO/2013/118498A1 |
The present invention relates to a magnetic sensor and a magnetic detection method. A first disposition pattern is provided with: a first magnetic sensing unit (201) which comprises, on a substrate, a magneto sensitive member (201a) and ...
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WO/2013/114742A1 |
Provided is a variable optical attenuator for which surface area can easily be increased, for which there is no need to apply an external field except when varying the transmittance, and which can operate at room temperature. In an embod...
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WO/2013/112615A1 |
A spin-torque transfer (STT) magnetic tunnel junction (MTJ) memory includes a unitary fixed magnetic layer, a magnetic barrier layer on the unitary fixed magnetic layer, a free magnetic layer having a plurality of free magnetic islands o...
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WO/2013/111521A1 |
This invention relates to a Hall electromotive force signal detection circuit and a current sensor thereof that allow for achievement of excellent broadband characteristic and high-speed response as well as high precision at the same tim...
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WO/2013/108357A1 |
Provided is a spin torque diode element having excellent frequency characteristics and excellent rectification efficiency. This spin torque diode element is provided with first and second magnetization free layers, and a common magnetiza...
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WO/2013/108508A1 |
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which ...
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WO/2013/108507A1 |
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which ...
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