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WO/2015/198523A1 |
The present invention addresses the problem of providing a magnetic thin film having a high magnetic anisotropy constant (Ku) and a large coercive force (Hc), and an application device including the magnetic thin film. This magnetic thin...
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WO/2015/192888A1 |
A design concept and method of fabrication of a semiconductor heterostructure containing a two-dimensional electron gas (2DEG), two-dimensional hole gas (2DHG), or a two-dimensional electron/ hole gas (2DEHG). The heterostructure contain...
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WO/2015/195122A1 |
Described is an oscillating apparatus which comprises: an interconnect with spin-coupling material (e.g., Spin Hall Effect (SHE) material); and a magnetic stack having two magnetic layers such that one of the magnetic layers is coupled t...
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WO/2015/190468A1 |
The purpose of the present invention is to obtain a magnetic sensor device (101) capable of accurately detecting an object to be detected (1) that uses a hard magnetic material (1a). A magnetic sensor device is provided with a magnet (3)...
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WO/2015/189023A1 |
The present invention relates to a magnetic field sensor arrangement, to a corresponding manufacturing method and to an operating method. The magnetic field sensor arrangement comprises an ASIC substrate (AC; AC) having a front face (VS)...
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WO/2015/182370A1 |
The purpose of the present invention is to provide a method for manufacturing an electronic component in which a wafer, to which groove-shaped machining has been applied, and a porous member are bonded by an adhesive, wherein the grooves...
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WO/2015/182071A1 |
This magnetic substance element comprises a magnetic thin wire and first and second magnetic tunnel junction elements each having a portion overlapping the magnetic thin wire, the center of the first magnetic tunnel junction element is l...
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WO/2015/182645A1 |
This magnetoresistive element (1) is provided with a substrate (10), and a laminate body provided above the substrate (10) and formed by laminating an antiferromagnetic layer (14) and a ferromagnetic layer (15). The ferromagnetic layer i...
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WO/2015/182365A1 |
In the present invention, the rates of change of the resistances of each of a plurality of first magnetoresistive elements (120a, 120b) are greater than the rates of change of the resistances of each of a plurality of second magnetoresis...
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WO/2015/182644A1 |
This magnetoresistive element (1) is provided with a substrate (10), a laminate body (12) provided above the substrate (10) and formed by laminating an antiferromagnetic layer (14) and a ferromagnetic layer (15) in that order from the su...
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WO/2015/182889A1 |
A magnetic tunnel junction element and a manufacturing method therefor are provided. The magnetic tunnel junction element comprises: a seed layer having an FCC (001) crystal structure; a first ferromagnetic layer located on the seed laye...
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WO/2015/182643A1 |
This magnetoresistive element (1) is provided with a substrate (10), an antiferromagnetic layer (14) provided above the substrate (10), a ferromagnetic layer (15) provided on the antiferromagnetic layer (14) so as to cover the entire pri...
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WO/2015/179149A1 |
A method of forming a magnetic tunnel junction (MTJ) device (118) includes forming a spacer (116) on an exposed side portion of the MTJ device (124). The method further includes forming an etch-resistant protective coating (116) associat...
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WO/2015/175697A1 |
A position sensing system and method for detecting the displacement of a door from a reference position, such as, for example, from a closed position. The system includes a magnetometer that may be operably connected to the door, and whi...
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WO/2015/175027A1 |
A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that ...
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WO/2015/170509A1 |
The purpose of the present invention is to provide a magnetic detection device that can be smaller and thinner. This magnetic detection device (1) is provided with a substrate (S), and a first magneto-impedance element (MI element) that ...
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WO/2015/172130A1 |
In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method ma...
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WO/2015/167718A1 |
A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. Th...
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WO/2015/160093A2 |
Disclosed is a memory element having, stacked on a substrate, a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a synthetic exchange diamagnetic layer and an upper electrode, wherein the lower ...
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WO/2015/160092A2 |
Disclosed is a memory element having, stacked on a substrate, a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a synthetic exchange diamagnetic layer and an upper electrode, wherein the lower ...
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WO/2015/160094A2 |
Disclosed is a memory element having, stacked on a substrate, a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a synthetic exchange diamagnetic layer and an upper electrode, wherein the lower ...
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WO/2015/157080A1 |
A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor tr...
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WO/2015/153142A1 |
A magnetoresistive random-access memory device with a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The memory device includes an antiferromagnetic...
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WO/2015/153107A1 |
A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. T...
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WO/2015/147813A1 |
Techniques are disclosed for forming a spin-transfer torque memory (STTM) element having an annular contact to reduce critical current requirements. The techniques reduce critical current requirements for a given magnetic tunnel junction...
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WO/2015/146593A1 |
Provided is a magnetic sensor (1) which is equipped with: a magnetoresistance element (11) wherein fixed magnetic layers (21) are stacked on a free magnetic layer (23) with a nonmagnetic material layer (22) therebetween; and an anti-ferr...
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WO/2015/146043A1 |
This magnetic sensor comprises a substrate, a magnetoresistive-element group, and a magnet group. The substrate has a first surface and a second surface on the opposite side from said first surface. The magnetoresistive-element group inc...
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WO/2015/147807A1 |
Described is an apparatus which comprises: first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different fr...
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WO/2015/148059A1 |
An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, pro...
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WO/2015/146827A1 |
Provided is a skyrmion memory (100) characterized by the inclusion of a magnetic body (12) that is shaped as a thin layer and is capable of generating skyrmions (S), a magnetic field generation part (16) that is provided on one side of a...
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WO/2015/146656A1 |
A magnetic sensor using a tunnel magnetoresistance (TMR) element wherein detection error resulting from the magnetoresistance characteristic of the TMR element, temperature variation, and the like, is corrected. Individual differences in...
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WO/2015/141306A1 |
A non-volatile storage device containing a laminate and a control unit is provided. The laminate comprises a first ferromagnetic layer that has a fixed direction of magnetization, a second ferromagnetic layer, and a first non-magnetic la...
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WO/2015/141313A1 |
A non-volatile storage device containing a laminate and a control unit is provided. The laminate comprises a first ferromagnetic layer that has a fixed direction of magnetization, a second ferromagnetic layer, and a first non-magnetic la...
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WO/2015/141673A1 |
A magnetoresistive effect element according to an embodiment of the present invention comprises first and second magnetic layers, an intermediate layer between the first and second magnetic layers, and a side wall protective film which i...
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WO/2015/137021A1 |
Provided is a magnetoresistive element (1) which is provided with a first magnetic layer (2), a second magnetic layer (8), a first non-magnetic layer (4) that is arranged between the first magnetic layer and the second magnetic layer, an...
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WO/2015/136802A1 |
This invention provides a magnetic storage element (110) containing a laminate (SB0) that has a first laminate section (SB1) and a second laminate section (SB2). The first laminate section contains a first ferromagnetic layer (10), the d...
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WO/2015/137172A1 |
Provided is a method for producing a semiconductor device capable of exerting the desired capability. The method comprises subjecting the layered structure (43) of a wafer (W) to plasma etching in an etching module (11) of the semiconduc...
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WO/2015/137277A1 |
In order to achieve higher sensitivity and measure a weak magnetic change with high accuracy in a magnetic sensor that uses a tunnel magnetoresistive element, the magnetic sensor is provided with a feedback circuit which controls a magne...
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WO/2015/136723A1 |
According to one embodiment, a magnetic memory includes a first metal layer including a first metal, a second metal layer on the first metal layer, the second metal layer including a second metal which is more easily oxidized than the fi...
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WO/2015/137234A1 |
[Problem] To provide a magnetoresistive element that exhibits a low saturation magnetization, a high degree of perpendicular magnetic anisotropy, and a high magnetoresistance ratio. Also, to provide a magnetic memory. [Solution] A magnet...
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WO/2015/136725A1 |
According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first ...
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WO/2015/136969A1 |
[Problem] To provide a magnetoresistive element which has perpendicular magnetic anisotropy and can express a more significant magnetoresistive effect, as well as magnetic memory using same. [Solution] A magnetoresistive element accordin...
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WO/2015/136852A1 |
[Problem] To quickly switch between gases in a dielectric-window gas channel in an electromagnetic-discharge plasma processing device, thereby increasing the speed of a process in which different types of plasma processing steps are repe...
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WO/2015/132997A1 |
According to one embodiment, a magnetoresistive memory device includes a substrate having a first surface which includes a first direction; and memory elements each having a switchable resistance. A first column of memory elements lined ...
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WO/2015/134206A1 |
Systems and methods for forming precise and self-aligned top metal contact for a Magnetoresistive random-access memory (MRAM) device include forming a magnetic tunnel junction (MTJ) in a common interlayer metal dielectric (IMD) layer wit...
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WO/2015/133035A1 |
According to the embodiment, a resistance changing element comprises a ferromagnetic first layer, a ferromagnetic second layer, a paraelectric third layer provided between the first layer and the second layer, a paraelectric fourth layer...
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WO/2015/134137A1 |
A method for fabricating an MRAM bit that includes depositing a spacer layer that protects the tunneling barrier layer during processing is disclosed. The deposited spacer layer prevents byproducts formed in later processing from redepos...
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WO/2015/130455A1 |
The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same, in one aspect, a method of fabricating cross-point memory arrays comprises for...
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WO/2015/129235A1 |
This magnetic sensor (1) has a fixed-magnetization layer (20), a magnetic-field detection layer (40), and an intermediate layer (30). The fixed-magnetization layer consists of thin films, and the direction of magnetization thereof is fix...
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WO/2015/125699A1 |
[Problem] The purpose of this invention is to provide a magnetic sensor that makes it possible to minimize degradation in the linearity of the output of said sensor due to deviations in the direction of the magnetic field being measured,...
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