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WO/2016/063448A1 |
In order to stably write data in a magnetic memory in which data is written using in-plane current-induced perpendicular switching of magnetization, the magnetic memory is provided with: a recording layer formed as a perpendicular magnet...
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WO/2016/060804A1 |
A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a gett...
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WO/2016/060058A1 |
The method according to one embodiment includes: (a) a step for etching an upper magnetic layer by means of plasma that is generated inside a processing vessel, wherein the etching of the upper magnetic layer is terminated at the surface...
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WO/2016/060063A1 |
In the plasma processing device according to one embodiment, a gas supply system supplies gas to the inside of a processing vessel. A plasma source excites the gas that is supplied by the gas supply system. A support structure holds a wo...
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WO/2016/056179A1 |
This magnetic sensor is provided with: a substrate; a magnetoresistive element group including first and second magnetoresistive elements disposed on the substrate; and a magnet group including first and second magnets corresponding to t...
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WO/2016/054489A1 |
A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thicknes...
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WO/2016/052028A1 |
Provided is a Hall sensor having an element that, among Hall elements and circuitry for driving semiconductor Hall elements, serves as a heat source, wherein it is possible to eliminate offset voltage with no increase in the chip size. T...
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WO/2016/050615A1 |
Electrical interconnecting device (10) comprising: a magnetic tunnel junction (2); a strap portion (7) electrically connecting a lower end of the magnetic tunnel junction (2); a current line portion (3') electrically connecting an upper ...
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WO/2016/051726A1 |
The present invention pertains to a Hall sensor manufacturing method, a Hall sensor, and a lens module, the Hall sensor being low profile and small, and having little fluctuation in magnetic characteristics. A metal sheet on which lead t...
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WO/2016/047013A1 |
Provided is a sputtering device whereby an insulator film having improved crystallinity can be formed with good uniformity of film thickness distribution. This sputtering device SM comprises a stage 2 holding a substrate W that is caused...
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WO/2016/048603A1 |
A magnetic tunnel junction stack is provided that includes nonmagnetic spacer layers between the free layer and the polarizer layer formed from magnesium oxide and tantalum nitride materials that balance the spin torques acting on the fr...
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WO/2016/048757A1 |
Systems and methods of integration of resistive memory elements with logic elements in advanced nodes with improved mechanical stability and reduced parasitic capacitance include a resistive memory element (MRAM) and a logic element (Log...
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WO/2016/047782A1 |
Provided is a magnetic sensor having a wide magnetic field range. The provided magnetic sensor is equipped with a substrate, and further equipped with a magnetic convergence unit, a plurality of magnetic detection units and a calculation...
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WO/2016/047254A1 |
In the memory cell unit array according to the present invention, memory cell units 10, composed of first wiring 31, second wiring and a non-volatile memory cell, are arranged in the form of a two-dimensional matrix in a first direction ...
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WO/2016/047783A1 |
Provided is a magnetic sensor for detecting external magnetic fields in three axis directions, BX-BZ. The present invention provides a magnetic sensor provided with a substrate, first to fourth magnetic detection units disposed on or in ...
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WO/2016/048248A1 |
There is provided a magnetic element including a ferromagnetic reference layer having a fixed or pinned magnetization direction, a ferromagnetic free layer having a switchable magnetization direction based on spin transfer torque, an ins...
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WO/2016/042871A1 |
According to an embodiment of the present invention, a magnetic field sensor is provided with: a magnetic field sense circuit (11) that is provided with a ferromagnetic element (15) wherein a resistance value changes due to a magnetic fi...
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WO/2016/042854A1 |
Provided is a magnetoresistive effect element, wherein a magnetoresistive element is provided with a first magnetic layer (2), a second magnetic layer (6) and a first non-magnetic layer (4) disposed between the first magnetic layer and t...
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WO/2016/042880A1 |
A variable resistance memory according to one embodiment of the present invention is provided with: a semiconductor layer (AA1); a gate electrode (27) that covers the upper surface and the lateral surface of the semiconductor layer (AA1)...
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WO/2016/038113A1 |
The invention relates to a system (10) for generating skyrmions, comprising: a gun (12) including a wall-forming region (14) made from a first material, said region (14) defining an outer space (16) made from a second material different ...
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WO/2016/039851A1 |
A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer. Such a method further include...
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WO/2016/039852A1 |
A magnetic tunnel junction (MTJ) device (300) includes a pinned layer (314), a tunnel barrier layer (310) on the pinned layer, and a free layer (308) on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anis...
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WO/2016/035758A1 |
Provided is a magnetic element that is capable of generating one skyrmion and eliminating the one skyrmion, said magnetic element having: a substantially rectangular, plate-like magnetic body; an upstream electrode comprising a nonmagnet...
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WO/2016/036838A1 |
Various examples are provided for multiferroic thin films. In one example, a multiferroic thin film device includes a thin film of multiferroic material and an electrode disposed on a side of the thin film of multiferroic material. The m...
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WO/2016/036355A1 |
The present disclosure relates to the fabrication of spin transfer torque memory devices and spin logic devices, wherein a strain engineered interface is formed within at least one magnet within these devices. In one embodiment, the spin...
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WO/2016/031520A1 |
One embodiment of the present invention provides a method for etching an object to be processed through a mask, said object to be processed comprising a lower electrode and a multilayer film that is provided on the lower electrode and co...
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WO/2016/028356A1 |
Ferroelectric components, such as the ferroelectric field effect transistors (FeFETs), ferroelectric capacitors and ferroelectric diodes described above may be operated as multi-level memory cells as described by the present invention. S...
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WO/2016/027388A1 |
Provided are a magnetoresistive element production method and production system capable of producing magnetoresistive elements having high magnetic properties and achieving further miniaturization, that is to say, a greater level of inte...
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WO/2016/024621A1 |
A magnetic sensor that detects, with high precision, a magnetic signal comprising a mixture of magnetic fields that are directed, respectively, along three orthogonal axes. This invention provides a magnetic sensor that contains a first ...
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WO/2016/025148A1 |
An apparatus includes a first magnetic tunnel junction (MTJ) device of a differential MTJ pair. The apparatus further includes a second MTJ device of the differential MTJ pair. The first MTJ device includes a sense layer having a high co...
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WO/2016/021349A1 |
Provided are: a magnetic storage medium having an endurance of close to infinity for the number of times data can be written, having almost perpetual data retention properties, and being capable of ultra high speed writing and deletion; ...
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WO/2016/021260A1 |
Provided are: a magnetic sensor provided with a coil and a magnetic measurement element, the magnetic sensor being capable of measuring, with high precision, a magnetic field induced by an electric current flowing through the coil; and a...
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WO/2016/022210A2 |
A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier ...
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WO/2016/021468A1 |
A magnetoresistance effect element (100) is provided with a heavy metal layer (11) composed of a heavy metal and shaped so as to extend in a first direction, a recording layer (12) composed of a ferromagnetic material and provided adjace...
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WO/2016/022107A1 |
Embodiments of the present disclosure describe configurations and techniques to increase interfacial anisotropy of magnetic tunnel junctions. In embodiments, a magnetic tunnel junction may include a cap layer, a tunnel barrier, and a mag...
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WO/2016/017612A1 |
The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin-film having the three-layer structure of ferromagnetic metal/non-magnetic...
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WO/2016/017490A1 |
[Problem] To provide a magnetic switch for which it is difficult for switch output switching timing to vary even when there is temperature variation. [Solution] A magnetic switch has a magneto-resistance effect element, an antiferromagne...
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WO/2016/013345A1 |
A plurality of magnetoresistive elements include paired first magnetoresistive elements (120a, 120b) and second magnetoresistive elements (130a, 130b). The rate of change in resistance of the first magnetoresistive elements (120a, 120b) ...
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WO/2016/013418A1 |
According to one embodiment of the present invention, a first processing gas is supplied into a processing chamber of a plasma processing apparatus and a plasma of the first processing gas is generated, thereby etching an upper magnetic ...
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WO/2016/013347A1 |
A plurality of magnetoresistive elements include first magnetoresistive elements (120a, 120b) and second magnetoresistive elements (130a, 130b). The rate of change in resistance of the first magnetoresistive elements (120a, 120b) is grea...
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WO/2016/013346A1 |
This magnetic sensor is provided with a substrate (110) which is rectangular in planar view, and with at least one first magnetoresistive element (120a, 120b) provided on the substrate (110). In planar view, the first magnetoresistive el...
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WO/2016/014326A1 |
A method for manufacturing MTJ pillars for a MTJ memory device. The method includes depositing multiple MTJ layers on a substrate, depositing a hard mask on the substrate and coating a photoresist on the hard mask. Further, alternating s...
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WO/2016/013650A1 |
This magnetic sensor device is provided with: a magnetic field generation unit (1) which is disposed to face one surface of a sheet-like object (4) to be detected including a magnetic component, and which generates a cross magnetic field...
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WO/2016/013438A1 |
This magnetic sensor device is provided with: a substrate (2) that has a magnetoresistive effect element (1) mounted thereon; a magnet (3) that forms a bias magnetic field for the magnetoresistive effect element (1); an enclosure (4) tha...
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WO/2016/010120A1 |
Disclosed is a magnetic sensor that accurately detects a magnetic field in three orthogonal directions by employing a GMR element or a TMR element. Provided is a magnetic sensor comprising: a first magnetic convergence part that extends ...
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WO/2016/010630A1 |
An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electro...
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WO/2016/007126A1 |
Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an addition...
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WO/2016/006456A1 |
This composition for removing etching residue contains an oxidant, a glycol compound, and an amine compound, and has the moisture content of 30 wt% or less on the basis of the total amount of the composition.
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WO/2016/002806A1 |
Provided is a skyrmion memory circuit (30) in which magnetic element skyrmions (40) can be circularly transferred. In the skyrmion memory circuit, current is applied in a closed-channel shaped magnetic body (10) between an outer circumfe...
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WO/2016/003539A1 |
A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), goo...
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