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WO/2013/099536A1 |
Provided is an integrated circuit that does not increase power consumption or reduce switching probability, which occur when a latch circuit that uses a spin-transfer torque magnetic tunneling junction (STT-MTJ) element etc. of the prior...
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WO/2013/099702A1 |
This invention addresses the problem of enabling design such that the height dimensions of an in-field heat treatment device using a non-coolant-type superconductive magnet are made more compact. The height dimensions of the in-field h...
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WO/2013/099719A1 |
In order to facilitate replacement of worn dielectric members in a substrate treatment device, this substrate treatment device is provided with a Faraday shield disposed in a position opposite of an antenna with a structural member compr...
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WO/2013/080436A1 |
[Problem] To obtain a storage element which exhibits excellent characteristic balance and in which thermal stability is ensured. [Solution] A storage element is provided with a layered structure having: a storage layer which has a magnet...
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WO/2013/080437A1 |
[Problem] To provide a storage element wherein inversion current is prevented from increasing in a short pulse width region, and it is possible to perform high-speed operations and to ensure thermal stability. [Solution] A storage elemen...
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WO/2013/080438A1 |
[Problem] To provide a recording element and recording device that are able to perform a write operation in a short period of time without write errors arising. [Solution] The recording element is configured having a layer structure incl...
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WO/2013/071260A1 |
A memory device may comprise a magnetic tunnel junction (MTJ) stack, a bottom electrode (BE) layer, and a contact layer. The MTJ stack may include a free layer, a barrier, and a pinned layer. The BE layer may be coupled to the MTJ stack,...
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WO/2013/069091A1 |
Provided is a tunnel magnetoresistive effect element which can be stably operated by achieving high TMR ratio and low write current and by increasing the thermal stability indexes (E/kBT) of a recording layer and a fixed layer, while sup...
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WO/2013/065751A1 |
Provided is a spin oscillation device which adds noise common to a plurality of spin oscillation elements in order to synchronize phases. The present invention is provided with: a spin oscillation element group (12) comprising a pluralit...
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WO/2013/065531A1 |
When a magnetic film on a substrate is etched by reactive ion beam etching during the production of a magnetic device, generation of particles and deterioration in process reproducibility, which are caused by a large amount of a carbon p...
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WO/2013/065266A1 |
This magnetic sensor is provided with: a Hall sensor that detects magnetism; and an IC for Hall sensor drive and signal processing. The IC has multiple, at least two, metal wiring layers. The Hall sensor and the IC are electrically conne...
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WO/2013/061160A2 |
Among other things, self-assembled conductive networks are formed on a surface of substrate containing through holes. The conductive network having a pattern is formed such that at least some of the conductive material in the conductive ...
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WO/2013/057863A1 |
This magnetic sensor is provided with a detection unit (10) which comprises first and second magnetoresistive elements (R1, R2). Each of the first and second magnetoresistive elements (R1, R2) has a pinned layer (11) wherein the magnetiz...
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WO/2013/058044A1 |
[Problem] To provide a strongly correlated non-volatile memory device which undergoes a phase transition caused by an electrical means and exhibits a non-volatile switching function. [Solution] An embodiment of the present invention prov...
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WO/2013/059706A1 |
A method is provided for creating an electrode node array device. First and second conductors are stamped from a stock sheet. Each of the conductors has a plurality of raised protrusions. The protrusions are interleaved in a manner in wh...
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WO/2013/047213A1 |
In the present invention a non-volatile resistance network aggregate is characterized in being provided with first and second resistance networks in which a plurality of non-volatile resistance elements are connected and in being provide...
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WO/2013/049811A1 |
A dual tunnel barrier magnetic element has a free magnetic layer positioned between first and second tunnel barriers and an electrode over the second tunnel barrier. A two step etch process allows for forming an encapsulation material on...
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WO/2013/042336A1 |
A sensing unit (20) of this magnetic sensor has first through eighth detection units (21a-21h) each of which is an isosceles triangle having a vertex angle of 45°. The first through eighth detection units are provided on one surface of ...
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WO/2013/044190A1 |
Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ, 102) with an acceptable themial barrier. A PMA coupling layer (110) i...
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WO/2013/040859A1 |
Disclosed are a nano multilayer film of electrical field modulation type, a field effect tube of electrical field modulation type, an electrical field sensor of switch type, and a random accessory memory of electrical field drive type, f...
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WO/2013/042787A1 |
Provided is, for example, a compound which can be a material that renders many functions controllable. One aspect of the present invention resides in an organic itinerant magnetic compound characterized in that the compound is formed by ...
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WO/2013/038994A1 |
[Problem] The present invention provides a frequency converter having a plurality of mixers for adjusting the reception bandwidth in relation to mixers that use magnetoresistive effect elements to generate multiplicative signals. [Soluti...
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WO/2013/040072A1 |
Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ (202) to increase the perpendic...
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WO/2013/038993A1 |
[Problem] The main purpose of the present invention is to provide a mixer having a band-pass filter function for reception, and which is also able to remove large multiplication signals. [Solution] A magnetoresistive element (2) includes...
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WO/2013/038992A1 |
[Problem] To enable operation using low local power whilst avoiding reductions in multiplication signal output. [Solution] Provided is a frequency-converting device capable of obtaining resonant characteristics having a high Q value, obt...
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WO/2013/029512A1 |
Disclosed is an MTJ three-axis magnetic field sensor, which comprises: an X axis bridge magnetic field sensor (25) with the sensitive direction being the X axis, a Y axis bridge magnetic field sensor (26) with the sensitive direction bei...
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WO/2013/027406A1 |
When using reactive ion etching which uses a gas in which oxygen atoms are included in etching a magnetoresistive effect element, damage is caused by oxidation in a magnetic film. Damage to the element caused by such oxidation causes deg...
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WO/2013/023699A1 |
The invention relates to a device (20, 42) for contactlessly determining a torque (16, 18) that is transmitted via a drive shaft (14) of a motor (10). A disadvantage of known torque sensors is that said sensors can generate greatly fluct...
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WO/2013/020569A1 |
A magnetoresistive memory element comprising a magnetic tunnel junction or magnetic multilayer exhibiting giant magnetoresistance with a free magnetic layer made of a material that is prone to a spin reorientation transition driven by la...
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WO/2013/015004A1 |
According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy per...
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WO/2013/009917A1 |
Systems and method for reading/sensing data stored in magnetoresistive random access memory (MRAM) cells using magnetically annealed reference cells. A MRAM includes a reference circuit (570) comprising at least one magnetic storage cell...
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WO/2013/005461A1 |
According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer and a conductive layer. The first and second magnetic layers have an axis of easy magnetization perpendicular to...
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WO/2012/176064A1 |
The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive...
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WO/2012/176747A1 |
In the past, in producing functional elements, numerous steps have been necessary to form an upper electrode and lower electrode, and mispositioning of the electrodes during formation thereof has been a problem. In a method for producing...
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WO/2012/173279A1 |
Provided is a nonvolatile magnetic device that can achieve low power consumption by writing by voltage and which has superior retention characteristics. The nonvolatile magnetic device includes a nonvolatile magnetic memory element (100)...
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WO/2012/172946A1 |
The present invention removes the offset component of a bias magnetic field generated due to attachment error during die bonding, from an induced magnetic field that acts on a free magnetic layer, and inhibits reduction in the linearity ...
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WO/2012/169241A1 |
This semiconductor storage device comprises a memory cell array region wherein a plurality of MTJ elements for storage, the resistance of each of said MTJ elements being variable in accordance with the magnetization direction, are arrang...
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WO/2012/160937A1 |
The purpose of the present invention is to provide a magnetic memory element for which it is possible for write characteristics and read characteristics to be designed independently, and which does not give rise to an increase in the num...
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WO/2012/140971A1 |
Provided is a thin film with which changes in resistance due to charge- and orbital-ordering of perovskite-type manganese oxide are fully realized. An embodiment of the present invention provides a perovskite-type manganese oxide thin fi...
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WO/2012/140074A1 |
The Hall sensor semiconductor component comprises an arrangement of at least two Hall sensors (1, 2) with signal connections (11, 13, 21, 23) and supply connections (12, 14, 22, 24), and a switching network, which varies the positions of...
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WO/2012/139494A1 |
A magnetoresistive device having a semiconductor substrate and preparation method therefor. The magnetoresistive device comprises: a semiconductor substrate; an oxide layer, disposed on the surface of the semiconductor substrate; multipl...
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WO/2012/138484A1 |
Techniques for reducing etch damage in magnetic memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which damage certain regions of the memory cell structure. For example, ...
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WO/2012/137911A1 |
The present invention provides an MRAM that utilizes current-induced domain wall motion and can be manufactured easily at low cost, and a method for manufacturing same. A magnetoresistive element is provided with: a first ferromagnetic l...
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WO/2012/137543A1 |
A plurality of magnetic resistance element mounting sections (13i, 13j, 13k) etc., are formed on the top section of a case (1). Magnet holding sections (14) that house a plurality of magnets (5) are formed in the bottom section of the ca...
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WO/2012/137544A1 |
A plurality of magnetic resistance element mounting sections (13i, 13j, 13k) etc., are formed on the top section of a case (1). Magnet holding sections (14) that house a plurality of magnets (5) are formed in the bottom section of the ca...
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WO/2012/127722A1 |
This magnetic memory is provided with a foundation layer, a free magnetization layer, barrier layer, and reference magnetization layer. The free magnetization layer is provided so as to cover the foundation layer, has reversible magnetiz...
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WO/2012/127043A1 |
The invention relates to a device comprising: an assembly (2) consisting of two thin films, respectively an upper thin film (6) and a lower thin film (4), each forming a ferromagnetic element, these two thin films being separated by a th...
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WO/2012/127606A1 |
In order to provide a magnetic reproducing head of large output, this magnetic reproducing head has an insulator undercoating layer (103), a non-magnetic wire (104) comprising a non-magnetic material, a first element portion (105a, 106a,...
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WO/2012/128669A1 |
The device for tracking masticatory movements makes it possible to calculate the number of masticatory movements. The device comprises a housing capable of elastic deformation under the action of the temporal and/or masseter muscles, a H...
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WO/2012/122851A1 |
Disclosed are a magnetic sensor chip and a magnetic sensor. The magnetic sensor chip comprises a magnetic sensitive film (2, 21), and in the longitudinal direction of the magnetic sensitive film (2, 21) are provided a number n of suppres...
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