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WO/2015/035169A1 |
A vertical Hall Effect sensor is provided having a high degree of symmetry between its bias modes, can be adapted to exhibit a small pre-spinning systematic offset, and complies with the minimal spacing requirements allowed by the manufa...
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WO/2015/029348A1 |
Provided is a structure that can suppress diffusion of B in a magnetic resistance element that has a layer that includes an alloy that contains B. In addition to including an alloy that contains B, the magnetic resistance element has: el...
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WO/2015/027808A1 |
A method for preparing a magnetic storage track, comprising: etching H first concave spaces on a silicon body by using an etching process, H being an integer greater than 1; depositing one layer of magnetic materials in the H first conca...
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WO/2015/029514A1 |
Disclosed are: a magnetic field detector comprising a magnetoresistance effect element constituted by a layered structure including a cap layer that includes a Mg-containing oxide, a free layer that is in contact with the cap layer and t...
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WO/2015/026861A1 |
A magnetic field guided crystal orientation system, and a method of operation of a magnetic field guided crystal orientation system thereof, including: a work platform; a heating element above the work platform for selectively heating a ...
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WO/2015/014248A1 |
A magnetoresistive current limiter, comprising a substrate (1), a magnetoresistive sensor layer (2), a first insulating layer, a coil (4), a second insulating layer, a magnetic shield layer (6), and an input electrode (8) and output elec...
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WO/2015/016061A1 |
[Problem] To provide: a magnetoresistive element which has low saturation magnetization and high perpendicular magnetic anisotropy; and a magnetic memory. [Solution] A magnetoresistive element which is provided with a first magnetic laye...
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WO/2015/008718A1 |
A magnetic sensor incorporating a tunnel magnetoresistive element, wherein high sensitivity of the tunnel magnetoresistive element is achieved and magnetism is measured with high accuracy. A magnetic sensor having: a ferromagnetic metal ...
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WO/2015/002727A1 |
A hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining free layer. The HOCL has a lower interface oxide layer and one or ...
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WO/2014/207818A1 |
Provided is a spin wave guide which is compatible with an existing synchronous processing unit and for which power consumption is small, as well as a calculating circuit using same. A spin wave circuit is configured such that: upon a fer...
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WO/2014/208105A1 |
Magnetoresistance-type magnetic sensors have suffered from a problem in which an increase in the ambient temperature results in the degradation of the magnetic characteristics of the sensor magnetic film itself and thus results in the de...
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WO/2014/201363A1 |
A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. Each of the first...
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WO/2014/174947A1 |
According to one embodiment, a semiconductor memory device comprises a semiconductor substrate including a plane portion expanding in a first direction and a second direction perpendicular to the first direction, and a pillar portion for...
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WO/2014/171451A1 |
When using a diffusion layer with a high resistance in a source terminal, there had been a possibility that high speed operations become difficult by the current required to write to a memory cell not flowing. A semiconductor device acco...
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WO/2014/172224A1 |
A synthetic antiferromagnet (30) that may serve as a reference layer for a magnetic tunnel junction (MTJ) is disclosed and is a laminate with a plurality of "x+1" magnetic sub-layers (22a...22(x+1)) and "x" non-magnetic spacers (23a...23...
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WO/2014/168012A1 |
A semiconductor device provided with: a first magnetic layer made of a soft magnetic material and disposed on a flat substrate surface; and a second magnetic layer disposed above the first magnetic layer and magnetically bonded to the fi...
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WO/2014/162730A1 |
A magnetoresistance effect magnetic sensor has a problem that the sensitivity thereof as a sensor lowers because the magnetic characteristic of a magnetic film itself lowers due to an increase in surrounding temperature. A sensor element...
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WO/2014/163121A1 |
This CPPGMR element is characterized by being provided with: an orientation layer (12) formed on a substrate (11), a Heusler alloy being aligned in the (100) direction; a base layer (13) stacked on the orientation layer (12) and acting a...
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WO/2014/156123A1 |
The present invention is provided with: a substrate (101) having an electrical resistance of at least 1 × 105 Ωcm; a first compound semiconductor layer (102) formed on the substrate (101), doped with carbon, and provided so as to conta...
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WO/2014/157735A1 |
Provided is a planarization method by which a Ru film that is formed as a memory-configuring film can be planarized. On a wafer (W), before a MTJ element is formed, a nitrogen GCIB (gas cluster ion beam) is used to irradiate the Ru film ...
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WO/2014/156108A1 |
The present invention relates to a magnetic sensor capable of sensing a state in which at least a perpendicular magnetic field and a parallel magnetic field are mixed on a substrate and the magnetic field components can be separated, and...
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WO/2014/154497A1 |
The invention relates to a spin torque magnetic integrated circuit (1), comprising a shared free layer (2) with a magnetic anisotropy such as a shape anisotropy or a crystal anisotropy with at least two stable magnetic states disposed on...
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WO/2014/155908A1 |
The present invention relates to a Hall electromotive force signal detection circuit suitable for a continuous-time-signal processing circuit. A third switching circuit (14) selects a terminal position to apply drive current to from amon...
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WO/2014/148586A1 |
According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a first magnetic layer having a variable magnetization direction. A first nonmagnetic layer is provided on the first magnetic lay...
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WO/2014/148437A1 |
Provided is a magnetic sensor that operates by means of a lower power consumption and particularly a low feedback current. The magnetic sensor is characterized by having: a first current wire, a second current wire, and a third current w...
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WO/2014/151820A1 |
Provided are magnetic sensors, which include a magnetic tunnel junction (MTJ) magnetoresistive element, a first electrode contacting at least a portion of a surface of the MTJ magnetoresistive element and extending beyond an edge of the ...
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WO/2014/149448A1 |
In one aspect, a method includes processing a metal substrate, performing a first etch on a first surface of the metal substrate to form, for an integrated circuit package, secondary leads and a curved component having two primary leads ...
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WO/2014/142318A1 |
The electromagnetic effect material according to the present invention is formed by an oxide ceramic comprising a polycrystal containing at least Sr, Co, and Fe as main components. The c-axis of the crystal axes of the oxide ceramic is o...
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WO/2014/143404A1 |
A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the pickups, a pre-epi implant region, or two ...
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WO/2014/136855A1 |
Provided is a planarization method whereby a metal film formed before the formation of an MTJ element of an MRAM can be reliably planarized. An MTJ element (48) is formed as follows: after a copper film (43) embedded in a SiO2 film (42) ...
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WO/2014/131969A1 |
Process for treating a magnetic structure, characterised in that it comprises the following steps: providing (S10) a magnetic structure comprising at least one first layer of magnetic material comprising a CoFeB alloy; irradiating (S20) ...
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WO/2014/130301A1 |
A memory cell (200) includes an elongated first electrode (206) coupled to a magnetic tunnel junction (MTJ) structure (210) and an elongated second electrode (212) aligned with the elongated first electrode coupled to the MTJ structure. ...
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WO/2014/119345A1 |
[Problem] The purpose of the present invention is to provide: a GMR element which has a large resistance change ratio (∆R/Rmin) and a wide linear output range; and a current sensor which uses the GMR element. [Solution] A GMR element (...
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WO/2014/116737A1 |
Material surrounding a magnetic tunnel junction (MTJ) device region of a multi-layer starting structure is etched, forming an MTJ device pillar (500) having an MTJ layer (550) with a chemically damaged peripheral edge region. De-nitridat...
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WO/2014/116742A1 |
An in-process magnetic layer (460, 462) having an in-process area dimension (DR1) is formed with a chemically damaged region at a periphery. At least a portion of the chemically damaged region is transformed to a chemically modified peri...
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WO/2014/115765A1 |
This magnetism detection device (1) is provided with: a magnetically sensitive section (10) comprising a magnetically sensitive body (11) and a detection coil (12) wound around the periphery of the magnetically sensitive body; a pulse tr...
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WO/2014/111607A1 |
The device comprises: a transparent substrate (S); first (E1) and second (E2) electrodes having ferromagnetic properties; a layer of organic light-emitting semiconductor material (SO) disposed between the electrodes (E1, E2); a first bar...
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WO/2014/097520A1 |
The objective of the present invention is to provide: an oxidation treatment device that can, when oxidizing a substrate, reduce the amount of oxygen adsorbed at a wall that demarcates an oxidation treatment space, increase throughput, a...
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WO/2014/097510A1 |
The present invention provides a method for manufacturing a magnetoresistance effect element capable of reducing the sublimation of a metal when the metal is oxidized while improving throughput during the formation of a tunnel barrier la...
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WO/2014/091874A1 |
This magnetic material contains a structure in which a first magnetic layer (1) and a second magnetic layer (2) are alternately laminated, essentially as single atom layers, in at least one part in the direction of lamination. The first ...
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WO/2014/091714A1 |
The present invention is provided with the following: a pellet (10); a plurality of lead terminals (22)-(25) disposed on the periphery of the pellet (10); a plurality of thin metal wires (31)-(34) that electrically connect a plurality of...
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WO/2014/084496A1 |
The present invention relates to a spin modulator having a phase adjustment means, comprising: a spin array which comprises m x n matrices of spin oscillators; a selection control means which selectively operates the spin oscillators acc...
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WO/2014/080823A1 |
Provided is a manufacturing method wherein a re-adhered film on a side wall of a magnetoresistive effect element in an element separating step of the magnetoresistive effect element is efficiently removed by means of ion beam etching. In...
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WO/2014/080634A1 |
When miniaturizing an ammeter or a wattmeter, a magnetoresistance effect element given a barber-pole electrode could be considered an efficient device. It was considered that a barber-pole electrode formed at 45° with respect to an axis...
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WO/2014/080782A1 |
Provided is a method for manufacturing a magnetoresistive effect element, the method comprising efficiently removing noble metal atoms in a reattachment film attached to a lateral wall after element isolation to thereby prevent a short-c...
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WO/2014/078025A1 |
High speed precessionally switched magnetic logic devices and architectures are described. In a first example, a magnetic logic device includes an input electrode having a first nanomagnet and an output electrode having a second nanomagn...
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WO/2014/073388A1 |
This ceramic material consists primarily of magnesium, gallium, lithium, and oxygen, and the main phase of this ceramic material is a crystalline solid solution consisting of gallium oxide and lithium oxide in solution in magnesium oxide...
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WO/2014/073387A1 |
This ceramic material consists primarily of magnesium, zirconium, lithium, and oxygen, and the main phase of this ceramic material is a crystalline solid solution consisting of zirconium oxide and lithium oxide in solution in magnesium o...
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WO/2014/065049A1 |
A magnetic-domain-wall-displacement memory cell includes a recording layer having a magnetic film. The recording layer includes a magnetization reversal region where magnetization can be reversed and first and second magnetization fixed ...
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WO/2014/063938A1 |
Self-reference-based MRAM element (1) comprising: a first magnetic tunnel junctions (2) and a second magnetic tunnel junctions(2'), each having a magnetoresistance that can be varied; and a field line (5) for passing a field current (51)...
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