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WO/2022/068561A1 |
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer, and a top electrode. The resonator has a resonance frequency lower than 2.5 GHz, and a l...
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WO/2022/071185A1 |
A multiplexer (1) comprises: a first filter (10); and a second filter (50) having a passband on the lower-frequency side of the passband of the first filter (10). A longitudinal-coupling acoustic wave resonator (13) of the first filter (...
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WO/2022/071062A1 |
Provided is an elastic wave device with which it is possible to improve the response level in an attenuation range outside a passband. An elastic wave device 1 of the present invention is provided with a piezoelectric substrate 2, a fi...
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WO/2022/071488A1 |
An elastic wave device is provided which can increase the degrees of freedom of a design that can suppress spurious emission. This elastic wave device 10 is provided with: a piezoelectric layer 16 that has a first principal surface 16a...
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WO/2022/071186A1 |
This multiplexer (1) comprises: a common terminal (tc); a first terminal (t1) and a second terminal (t2); a first filter circuit (10) provided on a first path (r1) connecting the common terminal (tc) and the first terminal (t1); and a se...
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WO/2022/067481A1 |
Provided are a device for injecting energy into a crystal in a crystal oscillator, and a crystal oscillator. The device comprises: a crystal; a voltage-controlled oscillator, for outputting an oscillation signal to the crystal; a ramp vo...
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WO/2022/071184A1 |
A bonded substrate according to the present disclosure includes: a support substrate formed of monocrystals of silicon; a piezoelectric substrate formed of monocrystals of lithium tantalate or monocrystals of lithium niobate; and a bond ...
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WO/2022/068562A1 |
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer, the piezoelectric layer being a piezoelectric layer comprising a doping element, the dop...
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WO/2022/071605A1 |
The present invention suppresses deterioration in filter characteristics caused by residue on an inorganic film. This elastic wave device comprises a support substrate, an inorganic film provided on the support substrate, a piezoelectric...
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WO/2022/061618A1 |
Provided are a resonator and preparation method, filter, and electronic device thereof, said resonator comprising a substrate (3), a Bragg reflective layer (2), and a piezoelectric layer (1) arranged stacked in sequence; a first electrod...
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WO/2022/062912A1 |
The present disclosure relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode. The overlapping region of the top electrode, the piezoelectric...
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WO/2022/063053A1 |
A resonator manufacturing method, comprising: forming a sacrificial layer pattern on a substrate; forming a lower electrode on the sacrificial layer pattern; forming a second sacrificial layer pattern on the lower electrode; forming a pi...
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WO/2022/065017A1 |
A high-frequency module (1A) comprises a module substrate (91) having a main surface (91a), a first circuit component and second circuit component positioned on the main surface (91a), and a metal shield plate (70) positioned on the main...
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WO/2022/065137A1 |
Provided is an elastic wave device which can easily adjust the capacity thereof and has an insertion loss that is not easily degraded. This elastic wave device 1 comprises: a piezoelectric substrate 2; a first busbar 4A and a second bu...
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WO/2022/065138A1 |
An elastic wave device (2) comprises: an elastic wave element substrate (12); filter electrodes (14a, 14b) that are formed on a first surface (12a) of the elastic wave element substrate (12); a first insulator layer (33) that is formed s...
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WO/2022/063149A1 |
A method for manufacturing an FBAR resonator, comprising: forming a lower electrode on a substrate; forming a dielectric layer or a piezoelectric layer on the lower electrode and the substrate, said layer having a first thickness; planar...
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WO/2022/065047A1 |
An insulating layer (160) has an opening (161) in a part covering an electrically conductive layer (120). A through-conductor (170) includes an inserted portion (171) positioned on the inside of the opening (161), and a shoulder portion ...
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WO/2022/061835A1 |
Disclosed is a manufacturing process for a bulk acoustic resonator, the process comprising: making an acoustic mirror on a substrate; making, on the substrate, a bottom electrode layer for covering the acoustic mirror; chemically treatin...
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WO/2022/065012A1 |
A high-frequency circuit (1) is provided with a power amplifier (11) for communication band A, and a power amplifier (12) for communication band B, wherein: transmission in communication band A, transmission in communication band B, and ...
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WO/2022/062910A1 |
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer and a top electrode, wherein the piezoelectric layer comprises a first layer and a second...
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WO/2022/061514A1 |
A quartz crystal resonator and a production method therefor, an oscillator, and an electronic device, relating to the field of quartz crystal oscillators and capable of reducing the size of quartz crystal resonators. The quartz crystal r...
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WO/2022/063231A1 |
A surface acoustic wave (SAW) device and methods of making the same are disclosed. The surface acoustic wave device includes a piezoelectric layer coupled to a high acoustic velocity layer at a first surface of the piezoelectric layer. A...
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WO/2022/065015A1 |
This semiconductor IC (130) comprises: a first high-frequency element (for example, an inductor (218) of a low-noise amplifier (21)); a second high-frequency element (for example, an inductor (215) of a low-noise amplifier (22)); and a f...
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WO/2022/057766A1 |
The present invention relates to a method for manufacturing a film bulk acoustic resonator, and a filter. The method comprises: forming a first electrode, a piezoelectric layer, and a second electrode; forming, on at least one of the fir...
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WO/2022/057769A1 |
Disclosed are a thin-film bulk acoustic wave resonator and method for manufacture thereof and filter, the acoustic wave resonator comprising: a piezoelectric stack structure, said piezoelectric stack structure comprising a first electrod...
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WO/2022/057466A1 |
The present invention relates to a film bulk acoustic wave resonator, a manufacturing method therefor and a filter thereof. The film bulk acoustic wave resonator comprises a piezoelectric laminated structure; the piezoelectric laminated ...
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WO/2022/059643A1 |
An elastic wave filter (1) that comprises: a first filter circuit (10) that has a pass band of a prescribed frequency band and is provided on a first pathway (r1) that connects a first signal terminal (T1) and a second signal terminal (T...
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WO/2022/059758A1 |
Provided is an elastic wave device that suppresses ripples in frequency characteristics. The elastic wave device comprises: a support substrate; a piezoelectric layer overlapping the support substrate when viewed in a first direction of ...
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WO/2022/059558A1 |
An elastic surface wave device (10) according to the present embodiment comprises: an elastic surface wave element (2) in which a functional element and a bump (21) are formed on one main surface; a substrate (1) on which the elastic sur...
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WO/2022/056953A1 |
A thermistor (602) resonator and a manufacturing method therefor. The thermistor (602) resonator comprises a first substrate (10), a second substrate (20), a first pad (40), a thermistor structure (60), a vibrator (80), and an upper cove...
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WO/2022/059760A1 |
Provided is an elastic wave device and a method for manufacturing an elastic wave device that suppresses ripples in frequency characteristics. The elastic wave device comprises: a support substrate; a piezoelectric layer overlapping the ...
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WO/2022/057768A1 |
Disclosed in the present invention is a manufacturing method for a thin film bulk acoustic wave resonator, comprising: forming a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being positioned bet...
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WO/2022/059759A1 |
Provided is an elastic wave device that suppresses deteriorations in piezoelectric layer characteristics. An elastic wave device according to the present invention comprises: a support substrate; a piezoelectric layer that overlaps with ...
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WO/2022/056943A1 |
Disclosed in the present invention are an acoustic resonator assembly and a filter. The acoustic resonator assembly comprises at least two acoustic resonators that are vertically connected to each other. The acoustic resonator comprises:...
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WO/2022/059586A1 |
Provided is an elastic wave device in which transverse modes can be effectively suppressed. An elastic wave device 1 according to the present invention comprises a piezoelectric substrate 2, and an IDT electrode 3 that has a plurality ...
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WO/2022/057767A1 |
Disclosed is a method for manufacturing a thin-film bulk acoustic resonator, comprising: providing a first substrate; forming a cavity on an upper surface of the first substrate; forming a sacrificial layer in the cavity; sequentially fo...
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WO/2022/057765A1 |
The present invention relates to a method for manufacturing a film bulk acoustic resonator and a filter. The method comprises: forming a first substrate having a first sacrificial layer; sequentially forming a first electrode, a piezoele...
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WO/2022/054773A1 |
Provided is an acoustic wave device capable of suppressing unwanted waves. An acoustic wave device according to the present invention is provided with: a piezoelectric layer 16 which comprises one of lithium niobate and lithium tantala...
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WO/2022/054372A1 |
[Problem] To improve the bonding strength between a piezoelectric material substrate and a support substrate, effectively reduce the reflection of bulk waves, and suppress spurious emissions. [Solution] This composite substrate 7A for an...
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WO/2022/052915A1 |
The present disclosure relates to a filter assembly and a manufacturing method therefor. The assembly comprises a substrate and multiple filters disposed on the substrate. The multiple filters include a first filter and a second filter d...
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WO/2022/053161A1 |
A bulk acoustic wave, BAW, resonator (100) on a substrate (102), comprising a piezoelectric element (104), a bottom electrode (106) on a first face (104A) of the piezoelectric element and a top electrode (108) on a second face (104B) of ...
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WO/2022/056138A2 |
Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each...
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WO/2022/054896A1 |
In the present invention, a splitter simultaneously inputs two signals having frequencies different from each other in a transmission band, to a transmission terminal. A transmission filter system and a reception filter system that are c...
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WO/2022/053400A1 |
Disclosed is a device and methods for making same. In one aspect, a device includes a package having at least four pins, and, within the package, a die that includes a filter circuit electrically coupled to the four pins. The filter can:...
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WO/2022/050210A1 |
An elastic wave filter (1) comprises: a first filter circuit (10) that is provided on a first path (r1); and an additional circuit (60) that is connected to the first path (r1). The first filter circuit (10) has a prescribed serial arm r...
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WO/2022/049418A1 |
The present invention relates to an acoustic wave sensor device, comprising a quartz material layer comprising a planar surface, a first interdig itated transducer formed over the planar surface of the quartz material layer, a first refl...
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WO/2022/050260A1 |
Provided is an elastic wave device capable of suppressing an out-of-band spurious. An elastic wave device 1 comprises a support substrate 2, a piezoelectric film 5 provided on the support substrate 2, and an IDT electrode 6 provided on...
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WO/2022/043054A1 |
An apparatus is disclosed for a surface-acoustic-wave filter using lithium niobate (LiNbO3). In an example aspect, the apparatus includes at least one surface-acoustic-wave filter including an electrode structure, a substrate layer, and ...
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WO/2022/047206A1 |
A substrate (202) that includes an encapsulation layer (203), a first acoustic resonator (205), a second acoustic resonator (207), at least one first dielectric layer (240), a plurality of first interconnects (244), at least one second d...
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WO/2022/044949A1 |
This piezoelectric vibration device comprises: a piezoelectric vibration plate having first and second excitation electrodes on the two main surfaces and first and second metal films respectively connected to the first and second excitat...
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