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WO/2002/084714A2 |
An electrochemical deposition apparatus and method for depositing a material onto a surface of a workpiece and for polishing the material are disclosed. The apparatus includes a platen and a polishing surface, including a conductive mate...
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WO/2002/083995A1 |
A novel method and apparatus of wet processing workpieces, such as electroplating semiconductor wafers and the like, that incorporates reciprocating processing fluid agitation to control fluid flow at the workpiece, and where electric fi...
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WO/2002/081783A1 |
A method and apparatus for fluid sealing the underside of a workpiece, such as a semiconductor wafer and the like, during wet-processing such as electrodeposition and the like, employing an elastomeric encased ring of flexible fingers ag...
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WO/2002/081782A1 |
The invention provides for a back-end metallisation process in which a recess is filled with copper and which includes the step of forming a plating base on the surfaces of the recess for the subsequent galvanic deposition of the said co...
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WO/2002/078903A2 |
Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. A...
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WO/2002/077328A1 |
A phosphate film processing device for forming a phosphate film on a metal blank by electrolyzing the metal blank in a predetermined electrolytic solution, wherein one of the positive and negative electrodes abuts against the metal blank...
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WO/2002/075797A2 |
A method of forming a copper layer with increased electromigration resistance. A doped copper layer is formed by controlling the incorporation of a non-metallic dopant during copper electroplating.
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WO/2002/075792A2 |
The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of t...
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WO/2002/072923A2 |
An electroplating bath medium for electroplating articles with a tin-cobalt, tin-nickel, or tin-cobalt-nickel alloy comprises: at least one tin salt; an alloying metal salt comprising a cobalt salt and/or a nickel salt; a complexant comp...
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WO/2002/070788A1 |
A method and apparatus for transmitting electrical signals and fluids to and/or from a microelectronic workpiece. An apparatus in accordance with one embodiemtn of the invention includes a shaft rotatable about a shaft axis and having a ...
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WO/2002/070780A1 |
A method for electroless plating the surface of an insulation layer formed by coating a resin coating basic material with a polymer material filled with inorganic filler and diluted with a solvent and then drying the coated basic materia...
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WO/2002/070791A1 |
A plating system, comprising a housing forming the outside thereof, the housing further comprising a frame and a plurality of panels fitted to the frame, wherein the frame and the panels are covered with synthetic films by utilizing heat...
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WO/2002/068727A2 |
There is provided a copper-plating solution which, when used in plating of a substrate having an seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and ensures complete filling with copp...
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WO/2002/068730A1 |
A plating device and a plating method are provided that are capable of uniformly plating the treatment surface of a treatment subject. A plating device comprising a plating solution tank capable of receiving a plating solution and having...
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WO/2002/068863A2 |
The invention relates to structural components for the boiler zone of power plants or refuse incineration plants, especially tubes or nests of tubes, fin and diaphragm walls, that consist of steel or steel alloys, and is characterized by...
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WO/2002/068728A1 |
The invention relates to a bath for the galvanic deposition of gold and gold alloys, and to the use thereof for producing dental shaped elements, wherein the gold is present in the form of a gold sulfite complex. The inventive bath and t...
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WO2002045476A9 |
A process and reactor for electrochemical processing of at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positio...
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WO/2002/069380A2 |
A method of forming a copper via and the resultant structure. A thin layer of an insulating barrier material (30), such as aluminum oxide or tantalum nitride, is conformally coated onto the sides and bottom of the via hole, for example, ...
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WO/2002/065953A1 |
A bone replacement endoprosthesis has a metallic support structure, at least part of the surface of which is galvanically silvered. Beneath the silver layer a bond layer is provided which can comprise gold.
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WO/2002/064861A2 |
An apparatus and associated method that removes electrolyte solution from a substrate, the apparatus comprises a thrust plate and a substrate extension unit. The thrust plate at least partially defines a spin recess. The substrate extens...
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WO2001052307A9 |
The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voi...
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WO/2002/063069A2 |
Methods of electrodeposition and electroless deposition are disclosed which afford super-filling of high-aspect ratio features on wafers by exposing wafers and electrolytic solutions in which they are immersed to conditions effective to ...
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WO2001026145A9 |
One embodiment of the present invention is a method for making metallic interconnects including: (a) forming a patterned insulating layer on a substrate, the patterned insulating layer including at least one opening and a field surroundi...
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WO/2002/063072A1 |
An apparatus (100) which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate (108) is provided. The apparatus has an anode (112) which can be contacted...
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WO/2002/059882A2 |
Electroplated components of magnetic head (100, 150) are fabricated utilizing a seed layer (112, 160) that is susceptible to reactive ion etch removal techniques. The seed layer is comprised of tungsten or titanium is fabricated by sputt...
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WO/2002/059398A2 |
The present invention relates to a plating apparatus and method which smoothly perform contact of a plating liquid with a surface of the substrate and which can prevent air bubbles from remaining on the surface to be plated. The plating ...
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WO/2002/058114A1 |
A substrate processing apparatus comprises a plating section (32) having a plating bath (44) for holding a plating liquid therein, and a head assembly (42) for holding a substrate (W) and immersing the substrate (W) in the plating liquid...
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WO/2002/057517A1 |
The invention relates to an electrodeposited bearing alloy based on lead, tin and copper for producing sliding layers for plain bearings and to an electroplating bath comprising lead, tin, copper and antimony. The invention additionally ...
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WO/2002/057514A2 |
A system for depositing materials on a surface of a wafer includes an anode, a shaping plate, a liquid electrolyte contained between the anode and the surface of the wafer, and electrical contact members contacting selected locations on ...
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WO/2002/058442A1 |
A flexible printed wiring board composed of: an electrolytic copper foil which has not undergone surface roughening; a zinc-based metallic layer deposited on the electrolytic copper foil in an amount of 0.25 to 0.40 mg/dm?2¿; and a poly...
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WO/2002/055764A1 |
A steel plate material for an anode can and an alkali-manganese dry cell anode can, capable of improving the cell characteristics of an alkali-manganese dry cell; and a plated steel plate for an alkali-manganese dry cell anode can, chara...
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WO/2002/055762A2 |
New compositions and methods for electrolytic deposition of metal layers, including metal traces, (e.g. circuit patterns) that are electrically segregated from adjacent traces in an electronic device, such as a semiconductor wafer or a p...
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WO/2002/053809A1 |
A spouted bed electrochemical reator (100) for treating a plurality of objects (114) with a fluid is set forth. The apparatus comprises a vessel (119) for contacting the plurality of objects (114). An upwardly directed stream of fluid an...
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WO/2002/053807A1 |
The invention relates to the electrochemical treatment of a band-shaped product on continuous conveyor belts. Said method is particularly advantageous as it is capable of treating electrically conductive and mutually insulated structures...
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WO/2002/052116A1 |
The invention relates to a method for producing different handles made of plastic material. According to said method, there are standard types of handle which comprise a plastic surface (11) and luxury types which comprise a plastic blan...
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WO/2002/050336A2 |
A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode...
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WO/2002/049773A1 |
Aqueous electroplating solutions and methods are provided for the codeposition of zinc and chromium. The solutions include effective amounts of zinc, chromium, and hydroxyl ions. The solutions further include an effective amount of one o...
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WO/2002/049077A2 |
A metal contact for a copper alloy surface, comprising: electroplated barrier layer having a thickness ranging from about 0.00001 inch to about 0.0001 inch, wherein the barrier layer is selected from the group consisting of cobalt, cobal...
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WO/2002/047139A2 |
A substrate processing method comprising steps for forming a copper film on a surface of a substrate. These steps includes the step of filling a first metal in the trenches so as to form a plated film of the first metal on an entire surf...
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WO2001032951A9 |
Methods are described for depositing a film or discontinuous layer of discrete clusters, of material (e.g, metals, metal mixtures or alloys, metal oxides, or semiconductors) on the surface of a substrate, e.g, a patterned silicon wafer, ...
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WO/2002/038830A1 |
A surface treated tin-plated steel sheet which has (1) an alloy layer formed on the surface of a steel sheet, (2) a tin plating layer being formed on said alloy layer with a remaining exposed portion of the alloy layer having an area of ...
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WO/2002/038834A1 |
(1) Porous nickel foil for an alkaline battery cathode, which is porous nickel foil formed by an electrolytic deposition method, having a thickness of 10-35 $g(m)m and a Vickers hardness of 70-130, the porous nickel foil formed by an ele...
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WO/2002/038827A1 |
A method for depositing a film of an advanced material on a surface of an article is disclosed. The method comprises placing the article within a bath having a pair of spaced electrodes one of which is formed by said article and an elect...
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WO/2002/033153A2 |
In the production of printed circuit boards it is required that organic protective coatings adhere tightly on the copper surfaces. Accordingly, matt layers of copper are to be preferred over lustrous coatings. The bath in accordance with...
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WO/2002/033152A1 |
A reactor assembly (30) for electrochemically processing a microelectronic workpiece (36) is set forth. The reactor assembly includes a processing bowl (48) having one or more fluid inlets through which a flow of processing fluid is rece...
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WO/2002/031227A2 |
A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate i...
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WO/2002/031229A1 |
The invention relates to a processing installation for an engraved cylinder, comprising a base frame (10) on which various processing stations (11 to 14) are fixed. Furthermore, a rail system (15) is installed on the base frame, on which...
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WO/2002/031231A1 |
A semiconductor production device for carrying out by one production device a plurality of processes including a plating process, an annealing process and two CMP processes to thereby shorten a TAT, and for replacing CMP processes with o...
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WO/2002/029875A2 |
The present invention provides an electroplating system (50) for semiconductor wafers (66) including a plating chamber (52) connected by a circulating system (52, 56, 58) to a plating solution reservoir (60). The semiconductor wafer (66)...
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WO/2002/027074A1 |
The invention relates to a method for selectively metallizing dielectric materials. To this end, the invention provides that an activation layer made of a conductive material is applied to the dielectric and is subsequently structured by...
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