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WO/2016/209272A1 |
An embodiment includes an apparatus comprising: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed lay...
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WO/2016/209393A1 |
An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the a...
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WO/2016/209257A1 |
An embodiment includes an apparatus comprising: a substrate; and a perpendicular magnetic tunnel junction (pMTJ) comprising a fixed layer and first and second free layers; wherein (a) the first free layer includes Cobalt (Co), Iron (Fe),...
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WO/2016/208407A1 |
The present invention relates to a semiconductor device allowing energy consumption due to writing of data into a non-volatile storage unit to be minimized. A writing control circuit 34 stores the same data as the data stored in MTJ elem...
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WO/2016/209227A1 |
Described is an apparatus which comprises: an input magnet formed of one or more materials with a sufficiently high anisotropy and sufficiently low magnetic saturation to increase injection of spin currents; and a first interface layer c...
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WO/2016/209267A1 |
An embodiment includes an apparatus comprising: a substrate; a magnetic tunnel junction (MTJ), on the substrate, comprising a fixed layer, a free layer, and a dielectric layer between the fixed and free layers; and a first synthetic anti...
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WO/2016/209226A1 |
Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and a stack of metal layers configured to convert the corresponding spin current to a second c...
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WO/2016/209249A1 |
An embodiment includes an apparatus comprising: first and second electrodes on a substrate; a perpendicular magnetic tunnel junction (pMTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and...
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WO/2016/204774A1 |
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ), between first and second electrodes, comprising a dielectric layer between fixed and free layers; a dielectric film directly contacting sidewalls of the fi...
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WO/2016/204835A1 |
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utiliz...
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WO/2016/204940A1 |
A complementary bit cell includes a first magnetic tunnel junction (MTJ) device having a free layer coupled to a first access transistor and having a pinned layer coupled to a bit line. The complementary bit cell also includes a second M...
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WO/2016/200510A1 |
The proposed semiconductor device (600) includes a magnetoresistive random-access memory (MRAM) trench (632) having a first conductive barrier liner (650) and an underlying second conductive barrier liner (660), the MRAM trench landing o...
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WO/2016/193552A1 |
The disclosed magnonic element for producing spin wave emissions comprises a ferromagnetic material zone (15) containing at least one pinned magnetic domain wall (16) and an electric actuator, e.g. providing an AC driving current, adapte...
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WO/2016/194886A1 |
A magnetoresistive element that is provided with: a free layer 10 which is provided with a magnetostrictive layer 11 containing a magnetostrictive material; a pinned layer 18 which is provided with a first ferromagnetic layer 16; a thin ...
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WO/2016/195946A1 |
Device structures and methods for fabricating device structures are provided herein. Magnetic random access memory (MRAM) devices described herein may include a film stack comprising a magnetic tunneling junction layer, a dielectric capp...
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WO/2016/196157A1 |
A spin valve magnetoresistance element has an even number of free layer structures having ferromagnetic or antiferromagentic coupling with respecto to associated pinning layers via non-magnetic spacers. It may have a configuration in whi...
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WO/2016/189772A1 |
A magnetoresistive effect element according to the present invention has a barrier layer, a reference layer formed on one surface of the barrier layer, a free layer formed on the other surface of the barrier layer, and a pin layer dispos...
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WO/2016/190255A1 |
A pulse generation device 10 is provided with: a substrate 24; a spin injector 14 disposed on the substrate 24 and comprising a ferromagnetic material; a spin rotor 18 disposed on the substrate 24 and comprising a ferromagnetic material,...
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WO/2016/190879A1 |
Described is an apparatus which comprises: a first layer formed of a material that exhibits spin orbit torque effect; a second layer formed of material that exhibits spin orbit torque effect; and a magnetic tunneling junction (MTJ) inclu...
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WO/2016/186178A1 |
A non-collinear magnetic resistance element provided with a non-magnetic layer sandwiched between a free layer and a fixed layer, wherein: the fixed layer has an easy magnetization direction in the in-plane direction or the perpendicular...
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WO/2016/181340A1 |
The present invention concerns a magnetic-photoconductive material including orientable magnetic moments or spins, the material being configured to generate photo-carriers permitting to orientate or re-orientate the magnetic moments or s...
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WO/2016/182354A1 |
A magnetic memory device comprises: tunnel junction unit cells having a fixed magnetic layer, an insulation layer, and a free magnetic layer which are sequentially stacked; a conducting wire body which supplies the unit cells with in-pla...
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WO/2016/182085A1 |
A magnetoresistive effect element (100) has a recording layer (10) that contains a ferromagnetic body, a barrier layer (20) layered on the recording layer (10), and a reference layer (30) layered on the barrier layer (20), the reference ...
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WO/2016/178758A1 |
A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magne...
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WO/2016/178721A1 |
A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non...
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WO/2016/174509A1 |
According to one embodiment, a magnetic memory device includes a magnetic memory chip having a magnetoresistive element, a magnetic layer having first and second portions spacing out each other, the first portion covering a first main su...
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WO/2016/175249A1 |
The objective of the present invention is to resolve the problem that at the high-frequencies at which MR elements oscillate, the peak width of an oscillation spectrum is wide, and to provide a high-frequency phase-locked oscillator circ...
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WO/2016/173481A1 |
A rapid thermal treatment method and apparatus for pinning layer of a local programming spintronic device, the apparatus comprising a rapid thermal annealing light source (31), a reflective cover, a magnet, a wafer (34), and a substrate ...
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WO/2016/176349A1 |
A system, device, and method are disclosed for a tunneling magnetoresistance (TMR) magnetic sensor to effectively increase magnetic field measurement linearity and minimize cross-axis interference. The TMR magnetic sensor comprises a plu...
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WO/2016/176594A1 |
Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing. The improvements may be done by reducing parasitic effects, increasing sense eleme...
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WO/2016/171800A1 |
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin ...
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WO/2016/170887A1 |
Provided is a magnetic sensor device which, in addition to determining the presence or absence of a magnetic body portion on a medium, is capable of determining whether the magnetic body portion is a hard magnetic material or a soft magn...
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WO/2016/171701A1 |
A memristor element is used to create a spectrally programmable optical device. An electromagnetic field is applied across the memristor element in order to alter its spectral properties. In turn, the spectral properties of the electroma...
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WO/2016/171920A1 |
A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer sep...
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WO/2016/167869A1 |
A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comp...
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WO/2016/167870A1 |
A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comp...
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WO/2016/164108A1 |
A method used while forming a magnetic tunnel junction comprises forming non-magnetic tunnel insulator material over magnetic electrode material. The tunnel insulator material comprises MgO and the magnetic electrode material comprises C...
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WO/2016/164265A1 |
In one aspect, a Hall Effect sensing element (100) includes a Hall plate (114) having a thickness less than about 100 nanometers an adhesion layer (110) directly in contact with the Hall plate and having a thickness in a range about 0.1 ...
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WO/2016/158867A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/161357A1 |
Described examples include graphene Hall sensors, magnetic sensor systems (410) and methods for sensing a magnetic field (B) using an adjustable gate voltage (VG) to adapt the Hall sensor magnetic field sensitivity according to a control...
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WO/2016/158849A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/158865A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/158923A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/158230A1 |
Provided is a skyrmion generation method in which the power consumed during generation of skyrmions can be reduced. In this skyrmion generation method, an electric field is locally applied to an insulating magnetic body 12 having a chira...
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WO/2016/158910A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/158926A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/159017A1 |
A magnetic resistance effect element (100) is provided with: a bias layer (11) containing an antiferromagnetic body, the bias layer (11) being shaped so as to extend in a first direction; a record layer (12) comprising a magnetic body, t...
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WO/2016/148392A1 |
Disclosed is a memory device having a magnetic tunnel junction comprising a free layer, a tunnel barrier and a pinned layer, wherein the free layer comprises at least two layers having magnetism of mutually different directions.
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WO/2016/148394A1 |
The present invention comprises, on a substrate: a lower electrode, a first buffer layer, a seed layer, a composite interchange diamagnetic layer, a capping layer, a pinned layer, a tunnel barrier, a free layer, a second buffer layer, an...
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WO/2016/148395A1 |
Disclosed is a memory device in which a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a composite interchange diamagnetic layer, and an upper electrode are stacked on a substrate, wherein the...
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