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Patent Searching and Data


Matches 501 - 550 out of 11,163

Document Document Title
WO/2002/080360
A tunable nanomechanical oscillator device (10) and system is provided. The nanomechanical oscillator device (10) comprising at least one nanoresonator, such as a suspended nanotube (24), designed such that injecting charge density into ...  
WO/2002/063763
A surface acoustic wave device for realizing a device miniaturization such as area reduction or ridge lowering, a cost reduction, and an improvement in reliability. This surface acoustic wave device comprises a piezoelastic substrate (1)...  
WO/2002/061833
The aim of the invention is to use a slow dissolving ceramic substrate for components mounted according to the Flip-Clip method, particularly surface wave components, whereby multi-layered metallisations are optionally produced thereon b...  
WO/2002/061943
A surface acoustic wave (SAW) device which has a piezo-electric substrate, an interdigital transducer (IDT) electrode provided on a first surface of the piezo-electric substrate and a resin coating covering the IDT electrode, wherein the...  
WO/2002/060054
An instrument for inspecting a surface acoustic wave device used as a high frequency filter in the field of mobile communication. The instrument comprises an electron gun (1) for generating and projecting an electron beam as primary elec...  
WO/2002/058233
According to the present invention, packaging of the filters, especially the acoustic wave filters, is performed by bonding the carrier (sbstrate) wafer carrying the manufactured filters with a second wafer, called capping wafer. Due to ...  
WO/2002/056466
A surface acoustic wave device comprises a piezoelectric substrate (12) of a rectangular plate shape for propagating a Rayleigh wave; a comb-like electrode (13) provided by forming an interdigital electrode on the piezoelectric substrate...  
WO/2002/056465
An SAW device restricted in electrical characteristic deterioration and excellent in moisture resistance. Many SAW elements each having an IDT electrode mainly containing aluminum are formed on a piezoelectric substrate. Then the piezoel...  
WO/2002/054592
An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second di...  
WO/2002/047263
A crystal oscillator module and method to manufacture the crystal oscillator module by sandwich method on a bottom-base, as a printed board (4), where the oscillator crystal (1) is for instance fixed onto the surface of the printed distr...  
WO/2002/045262
An acoustic wave device includes stripe-shaped electrodes (4, 5) of conductor on a piezoelectric substrate (1). Dielectric thin film (8) with a base of oxidation silicon is deposited on the electrodes (4, 5) and a reflector (9) of approp...  
WO/2002/045265
Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a su...  
WO/2002/042527
A surface acoustic wave element usable in a high frequency band, a diamond substrate having a piezoelectric thin film to be used in an optical element material, and a method for manufacturing it. The diamond substrate can be obtained by ...  
WO/2002/039537
A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means h...  
WO/2002/039583
The invention relates to an electronic device comprising an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cove...  
WO/2002/035702
In a surface acoustic wave (SAW) filter having a substrate and electrodes formed on the substrate, an electrode has a base layer, a first metal layer made of Al or an Al-based metal and oriented in a constant direction to the substrate, ...  
WO/2002/031974
A method of producing surface acoustic wave devices comprising the steps of forming a first film on a piezoelectric board, forming a second film on the first film, forming a resist pattern of predetermined shape on the second film, isotr...  
WO/2002/025811
The invention relates to a component having an acoustically active material, whose acoustic constants can be at least partially altered. The acoustically active material is located at least partially at a phase transition point and/or in...  
WO/2002/019520
A resonator with mechanical node reinforcement includes a substrate, an intermediate portion adjacent to the substrate, and a resonant portion adjacent to the intermediate portion. The intermediate portion may include multiple layers, su...  
WO/2002/016256
A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-drive, lateral micromechanical resonator with submicron elec...  
WO/2002/017482
A micromechanical resonator device and a micromechanical filter utilizing the same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of t...  
WO/2002/017481
A micromechanical resonator device is disclosed that utilizes competition between the thermal dependencies of geometrically tailored stresses and Young's modulus to: (1) reduce the temperature coefficient (TC¿f?) of the resonance freque...  
WO/2002/009131
The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), s...  
WO/2002/009160
High quality epitaxial layers (26) of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of ...  
WO/2002/009202
At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositi...  
WO/2002/007310
The invention concerns an acoustic wave device comprising a ferroelectric material layer (C) and a substrate. The invention is characterised in that the ferroelectric material is interposed between a first electrode (E1) deposited at the...  
WO/2002/007234
A lens-line type piezoelectric device thinner than the manufacture limit thickness, which is conventionally difficult to manufacture, and a method for manufacturing the same. The piezoelectric device has a vibrating part of at least two ...  
WO/2002/005424
A method of manufacturing a small surface mounting type surface acoustic wave device capable of easily providing a sealability and suitable for a flip chip bonding, comprising the steps of flip chip-bonding a surface acoustic wave device...  
WO/2002/005425
A method is provided by which filters consisting of a plurality of think film bulk acoustic resonators (FBAR) fabricated on a semiconductor wafer such as silicon or some other type of wafer can be hermetically packaged in a way that pres...  
WO/2002/001931
A multilayer substrate module to which an external ground node (20) supplies a reference ground potential (Vss) includes a plurality of ground lines (170-1, 170-2, 170-3), which correspond to a plurality of internal circuits (210, 220, 2...  
WO/2002/001714
A surface acoustic wave device to be used as a branching filter for handling high-frequency waves of several GHz in a mobile communication field can be manufactured by forming a metal film over a wafer-shaped piezoelectric substrate and ...  
WO/2001/099276
A bulk acoustic wave device has a number of resonator elements (14) which are laterally spaced such that a signal (26) applied between to one resonator element (14¿1?) at a resonant frequency of the device is coupled to the other resona...  
WO/2001/095486
An assembly and method for manufacturing individual microelectronic devices, such as surface acoustic wave devices, employs a unitary array of a nonconductive material having plural spaced cavities extending into the array, with a recess...  
WO/2001/091290
An electric filter comprises a plurality of thin film bulk acoustic resonants (10, 11) arranged in series and in parallel which have electrodes (24, 25) of different working area (L) and optionally a piezoelectric layer (23) of different...  
WO/2001/089084
A small multichip package is provided which includes a plurality of SAW elements of different frequency characteristics in a single package. A plurality of SAW elements are bonded face down to a package so that a line along which the SAW...  
WO/2001/083238
A system and method of precisely adjusting the properties of a device using a gas cluster ion beam 'GCIB' are described. Use of the invention permits the precise removal or addition of small amounts of material without significantly dama...  
WO/2001/078230
The invention describes a tunable filter arrangement with at least two resonators which are coupled to one another and of which at least one is connected to a capacitor with tunable capacitance. The electrical properties of the resonator...  
WO/2001/078229
The invention describes a tunable filter arrangement with a plurality of resonators which are coupled to one another and of which there is at least one which comprises a piezoelectric component made of a ferroelectric material and to whi...  
WO/2001/076064
A surface-acoustic-wave die includes a generally rectangular die that comprises a piezoelectric material, atop which is positioned a surface-acoustic-wave electrode pattern. The pattern has a generally rectangular footprint, and the foot...  
WO/2001/069781
A high power SAW device (10) includes an electrode (16, 19) positioned on a piezoelectric substrate (11). The electrode includes a bonding layer (30) of material deposited on and bonding with the substrate and a conductive structure (35)...  
WO/2001/063759
A method of manufacturing a piezoelectric filter with a resonator comprising a layer of a piezoelectric material (1) which is provided with an electrode (2, 3) on either side, which resonator is situated on an acoustic reflector layer (4...  
WO/2001/063758
A method of manufacturing a hybrid integrated circuit comprising a semiconductor element (1) and a piezoelectric filter (2), which are situated next to each other and connected to a carrier substrate (3). The semiconductor element compri...  
WO/2001/061847
The electronic device (10) of the invention has a first inductor (12) and a first capacitor (11). The capacitor (11) comprises a first capacitor electrode (21) in a first electrically conducting layer (3), a dielectric (26), and a second...  
WO/2001/061846
The invention relates to a hollow microbeam that is fabricated upon a base or pedestal. Processing of the hollow microbeam includes forming at least one hollow channel in the microbeam by removing temporary fillers after formation of the...  
WO/2001/059812
The invention relates to an assembly comprising a multitude of products provided with an electronic component (1), which has a fundamental quantity that can be modified by tuning the component (1) using an electrical signal. The inventiv...  
WO/2001/059827
Sensitive component structures (2) can be encapsulated by enclosing them with a frame structure (6) consisting of a light-sensitive reaction resin and covering the latter with another, structured layer of reaction resin after applying an...  
WO/2001/059827
Sensitive component structures (2) can be encapsulated by enclosing them with a frame structure (6) consisting of a light-sensitive reaction resin and covering the latter with another, structured layer of reaction resin after applying an...  
WO/2001/059853
The aim of the invention is to increase resistance to breaking and to prevent optical reflections during structuring for producing components on piezoelectric substrates. To this end, an absorber layer (2) which has high optical absorpti...  
WO/2001/058007
A piezoelectric vibrator (101), in a closed vessel consisting of a lid (105), a frame (103), and a board (104), is fixed on the board (104) (the surface of the board) by a fixing member (104a) made of a material having conductivity, and ...  
WO/2001/052410
A high-resistance layer arranged on a pyroelectric substrate, for the harmless draining of pyroelectric voltages, is disclosed. Said layer can be applied to the whole surface in a thin layer process and then formed, such that electricall...  

Matches 501 - 550 out of 11,163