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Matches 501 - 550 out of 19,528

Document Document Title
WO2005109639A3
There are many inventions described and illustrated herein. These inventions are directed to a method of fabricating a microelectromechanical resonator having an output frequency that may be adjusted, tuned, set, defined and/or selected ...  
WO/2006/018788A1
Thin-film bulk acoustic wave filters based on piezoelectric resonators operating in the thickness extensionally mode achieve relative band-widths in the order of to 4 % at a center frequency of 2 GHz. According to an exemplary embodiment...  
WO/2006/013301A1
The invention concerns an electromechanical resonator comprising a vibrating body (4), at least one excitation electrode (14, 16) and at least one detection electrode (10, 12), characterized in that the vibrating body comprises a first p...  
WO2004059837B1
An electronic component for improving temperature characteristics and electric characteristics, comprising a substrate (1), an interdigital electrode (2) provided on the top surface of the substrate (1), and a protection film (4) coverin...  
WO/2006/011417A1
Disclosed is a surface acoustic wave device wherein an insulator layer is so formed as to cover an IDT electrode and the surface of the insulator layer is planarized. In such a surface acoustic wave device, the electrode can have a suffi...  
WO/2006/011449A1
It is possible to provide a concatenated body of MEMS filters having a design flexibility and capable of ignoring the affect of the mass load. There is provided a structure in which the affect of the mass load is not reflected in the cha...  
WO/2006/006343A1
A piezoelectric device which has reduced sizes and improved moisture resistance and does not require sealing after being mounted on a circuit board, and a method for manufacturing such device are provided. The piezoelectric device (10) i...  
WO/2006/003933A1
An electronic part includes: a substrate; a comb-shaped electrode having a plurality of electrode fingers arranged parallel to one another on the upper surface of the substrate; and a protection film formed on the substrate so as to cove...  
WO/2006/004470A1
The invention discloses a tuneable resonator (100, 200, 300, 500, 600, 700, 900) with a substrate layer (140, 260, 360, 560, 660, 960), which substrate layer supports a structure with a first electrode (130, 240, 350, 550, 650). In conne...  
WO/2005/125006A1
It is possible to provide a quartz device having a stable oscillation characteristic and a high reliability. The quartz device includes a first main surface having a part of a basic part and a part of an oscillation leg within a single p...  
WO/2005/125005A1
A SAW device removing the defects of prior art that a filter satisfying the standards required for the RF SAW filter of a GPS receiver could not be realized and that the performance of a circuit or an apparatus degrades when a SAW filter...  
WO/2005/125007A1
There is provided a high-frequency element capable of stabilizing DC bias voltage applied to an electrostatic drive type vibrator and a power supply element capable of supplying a stable DC bias voltage. There is also provided a communic...  
WO/2005/122395A1
A small-sized highly integrated electric machine signal selecting element, which can select and output only a signal of a prescribed frequency without providing a high sensitive oscillation detecting function, and an electric device usin...  
WO/2005/114836A1
Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured...  
WO/2005/112259A1
Disclosed herein is a method of manufacturing a lithium tantalate substrate for surface acoustic wave elements, which includes heating a lithium tantalate material to a temperature of not less than the Curie temperature of lithium tantal...  
WO/2005/109636A1
The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical los...  
WO/2005/109639A2
There are many inventions described and illustrated herein. These inventions are directed to a method of fabricating a microelectromechanical resonator having an output frequency that may be adjusted, tuned, set, defined and/or selected ...  
WO2005035436A3
A method of increasing a quality factor for a micromechanical resonator uses a laser beam to anneal the micromechanical resonator. In one embodiment, the micromechanical oscillator is formed by fabricating a mushroom shaped silicon oscil...  
WO/2005/104361A1
The present invention provides an electro-mechanical device , for example , a Micro-Electro-Mechanical Systems (MEMS) device, for example a low-loss Film Bulk Acoustic Resonators (FBAR) filter, and a process to produce the same. In order...  
WO/2005/102910A1
Disclosed is an MEMS component that is disposed on a panel as a chip component. Each assembly point for a chip is tightly encircled by a frame structure that sits on the panel. The joint between the frame structure and the chip is sealed...  
WO/2005/104639A1
When inner electrodes (22-24) are formed of a conductive paste for a multilayer ceramic board, which can be sintered at a low temperature and contraction of which at the time of baking is suppressed, the inner electrodes (22-24) contract...  
WO/2005/104257A1
An electromechanical device (201) includes a support structure (210) formed by attaching inner surfaces of second and third substrates (220a-b) to a first substrate (230). The support structure (210) includes at least one cavity (250) be...  
WO/2005/099090A1
A surface acoustic wave filter for preventing a large void from being generated at the time of pressing a resin sheet covering an element chip while heating the resin sheet, and a method for manufacturing the surface acoustic wave filter...  
WO/2005/099087A1
A μ-flap type nano/micro mechanical device with a lower electrode 1, 1a, 1b, an upper electrode layer 2, an dielectric layer 3 arranged between the lower electrode 1, 1a, 1b and the upper layer 2, such that the dielectric layer 3 and sa...  
WO/2005/099088A1
An integrated circuit is provided which includes one or more device elements (24) formed above a base substrate (22), a structure (43) forming a sealed cavity (46) above at least a portion of the one or more device elements (24), and one...  
WO/2005/099089A1
A SAW device employing a quartz substrate having device size smaller than that of conventional structure and exhibiting a high Q and excellent frequency-temperature characteristics. An IDT (2) consisting of a plurality of interdigital el...  
WO2005078752A8
A piezoelectric thin-film electromechanical microsystem (MEMS) device (18) comprising an RF-MEMS switch (14) and a bulk acoustic wave piezoelectric thin-film RF resonator (10) mounted on a substrate (12) provided with an acoustic mirror ...  
WO/2005/096373A1
After forming an unwelded part in a primary welding process step (S203) composed of a first beam irradiation process step (S203a) and a second beam irradiation process step (S203b), a prescribed part on an electronic beam trajectory form...  
WO/2005/096493A1
A method for manufacturing a quartz oscillator having a stable temperature drift characteristic attributed to the quartz oscillating piece and a quartz oscillator are disclosed. The method comprises a quartz crystal etching step (S1) of ...  
WO/2005/093949A1
A method of manufacturing a boundary acoustic wave device with less frequency variation. First to third media (1 to 3) are formed sequentially in this order. An electrode (5) is disposed at the boundary between the first and second media...  
WO/2005/091500A1
A surface acoustic wave device arranged such that pyroelectricity of a piezoelectric substrate is not revived, and a process for fabricating that device. The piezoelectric substrate (12) of a surface acoustic wave element (10) being cont...  
WO/2005/083881A1
A surface acoustic wave device such that the resonance frequency and the center frequency can be easily adjusted, the frequency temperature characteristic is favorable, the specific bandwidth is wide, and the antiresonance resistance is ...  
WO/2005/081272A1
The LC composite component of the present invention comprises a base, a first to third terminals provided on the base, a helical conductor provided on the base, and an internal layer conductor inside the base, the internal layer conducto...  
WO/2005/078752A1
A piezoelectric thin-film electromechanical microsystem (MEMS) device (18) comprising an RF-MEMS switch (14) and a bulk acoustic wave piezoelectric thin-film RF resonator (10) mounted on a substrate (12) provided with an acoustic mirror ...  
WO/2005/074502A2
High-Q micromechanical resonator devices and filters utilizing same are provided. The devices and filters include a vibrating polysilicon micromechanical 'hollow-disk' ring resonators obtained by removing quadrants of material from solid...  
WO/2005/076470A1
The invention relates to a modularly constructed electrical component having a module substrate preferably made of Si and having one or more preferably unhoused chips, which are placed on this module substrate while being electrically co...  
WO/2005/076473A1
A plurality of surface acoustic wave resonators (15-20), each consisting of an interdigital electrode and a grating reflector, are connected on a piezoelectric substrate (12). A dielectric film (14) is formed on the surface of at least o...  
WO/2005/074052A1
A mask material (12) applied to the surface to be processed of a piezoelectric material (11) is brought into contact with solvent vapor (V) and reflowed, and then shaped into a bump mask (14) where the central part is raised by the surfa...  
WO/2005/071832A1
There is provided a piezoelectric resonator frequency adjustment method for suppressing lowering of insulation resistance, shortcircuit defect, and inter-electrode migration when frequency adjustment is performed for etching an electrode...  
WO/2005/071731A1
An electronic component manufacturing method in which few voids in the resin encapsulation portion are produced, degradation of the characteristics hardly occurs, and the cost can be reduced. The method includes a reduced-pressure packin...  
WO/2005/069486A1
An acoustic boundary wave device (1) using an acoustic boundary wave of SH type. The devise effectively suppresses unwanted spurious and have a good resonance characteristic and a filter characteristic. Electrodes including an interdigit...  
WO2005013353A3
The invention relates to a method for producing reduced-thickness electronic components. The inventive method consists in placing at least one electronic component (1) by the active face thereof provided with electric contacts (10, 11) o...  
WO/2005/060091A1
Disclosed is a method for manufacturing a piezoelectric thin-film device comprising a step wherein an insulating layer (12) to be etched with a specific chemical substance is formed on the upper surface of a substrate (11); a step wherei...  
WO2005020482A3
A source signal is converted into a time-variant temperature field with transduction into mechanical motion. In one embodiment, the conversion of a source signal into the time-variant temperature field is provided by utilizing a micro-fa...  
WO/2005/055422A1
The invention relates to an electronic component (1) comprising at least one resonator element (5) which is disposed in a housing (8) of a case. The aforementioned case comprises: a main part (2) with a base (20) and at least one annular...  
WO2004086027A3
A sensor and methods for making and using the same in which a mechanical resonator is employed, comprising a resonator portion for resonating in a fluid without the substantial generation of acoustic waves; and an electrical connection b...  
WO/2005/048450A1
The present invention relates to a method of manufacturing a resonator within a semiconductor device, said semiconductor device comprising a substrate, wherein said method comprises the steps of: - etching a hole in the substrate, - crea...  
WO/2005/046051A1
A micro-resonator wherein the combined impedance of the resonator can be reduced so as to allow the resonator to be applied to a desired device. A communication apparatus having a filter comprising such a micro-resonator. The micro-reson...  
WO2005020434A3
A micromechanical resonator (400, 1125) is formed on a substrate (120). The resonator has a partial spherical shell (110) clamped on an outside portion of the shell to the substrate. In other embodiments, a flat disc or other shape may b...  
WO2005006432A3
The invention relates to the formation of vertical electrical through contacts in a support substrate, on the surface of which component structures are fixed, whereby the component structures are associated with contact surfaces, arrange...  

Matches 501 - 550 out of 19,528