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Patent Searching and Data


Matches 501 - 550 out of 19,038

Document Document Title
WO/2005/093949A1
A method of manufacturing a boundary acoustic wave device with less frequency variation. First to third media (1 to 3) are formed sequentially in this order. An electrode (5) is disposed at the boundary between the first and second media...  
WO/2005/091500A1
A surface acoustic wave device arranged such that pyroelectricity of a piezoelectric substrate is not revived, and a process for fabricating that device. The piezoelectric substrate (12) of a surface acoustic wave element (10) being cont...  
WO/2005/083881A1
A surface acoustic wave device such that the resonance frequency and the center frequency can be easily adjusted, the frequency temperature characteristic is favorable, the specific bandwidth is wide, and the antiresonance resistance is ...  
WO/2005/081272A1
The LC composite component of the present invention comprises a base, a first to third terminals provided on the base, a helical conductor provided on the base, and an internal layer conductor inside the base, the internal layer conducto...  
WO/2005/078752A1
A piezoelectric thin-film electromechanical microsystem (MEMS) device (18) comprising an RF-MEMS switch (14) and a bulk acoustic wave piezoelectric thin-film RF resonator (10) mounted on a substrate (12) provided with an acoustic mirror ...  
WO/2005/074502A2
High-Q micromechanical resonator devices and filters utilizing same are provided. The devices and filters include a vibrating polysilicon micromechanical 'hollow-disk' ring resonators obtained by removing quadrants of material from solid...  
WO/2005/076470A1
The invention relates to a modularly constructed electrical component having a module substrate preferably made of Si and having one or more preferably unhoused chips, which are placed on this module substrate while being electrically co...  
WO/2005/076473A1
A plurality of surface acoustic wave resonators (15-20), each consisting of an interdigital electrode and a grating reflector, are connected on a piezoelectric substrate (12). A dielectric film (14) is formed on the surface of at least o...  
WO/2005/074052A1
A mask material (12) applied to the surface to be processed of a piezoelectric material (11) is brought into contact with solvent vapor (V) and reflowed, and then shaped into a bump mask (14) where the central part is raised by the surfa...  
WO/2005/071832A1
There is provided a piezoelectric resonator frequency adjustment method for suppressing lowering of insulation resistance, shortcircuit defect, and inter-electrode migration when frequency adjustment is performed for etching an electrode...  
WO/2005/071731A1
An electronic component manufacturing method in which few voids in the resin encapsulation portion are produced, degradation of the characteristics hardly occurs, and the cost can be reduced. The method includes a reduced-pressure packin...  
WO/2005/069486A1
An acoustic boundary wave device (1) using an acoustic boundary wave of SH type. The devise effectively suppresses unwanted spurious and have a good resonance characteristic and a filter characteristic. Electrodes including an interdigit...  
WO2005013353A3
The invention relates to a method for producing reduced-thickness electronic components. The inventive method consists in placing at least one electronic component (1) by the active face thereof provided with electric contacts (10, 11) o...  
WO/2005/060091A1
Disclosed is a method for manufacturing a piezoelectric thin-film device comprising a step wherein an insulating layer (12) to be etched with a specific chemical substance is formed on the upper surface of a substrate (11); a step wherei...  
WO2005020482A3
A source signal is converted into a time-variant temperature field with transduction into mechanical motion. In one embodiment, the conversion of a source signal into the time-variant temperature field is provided by utilizing a micro-fa...  
WO/2005/055422A1
The invention relates to an electronic component (1) comprising at least one resonator element (5) which is disposed in a housing (8) of a case. The aforementioned case comprises: a main part (2) with a base (20) and at least one annular...  
WO2004086027A3
A sensor and methods for making and using the same in which a mechanical resonator is employed, comprising a resonator portion for resonating in a fluid without the substantial generation of acoustic waves; and an electrical connection b...  
WO/2005/048450A1
The present invention relates to a method of manufacturing a resonator within a semiconductor device, said semiconductor device comprising a substrate, wherein said method comprises the steps of: - etching a hole in the substrate, - crea...  
WO/2005/046051A1
A micro-resonator wherein the combined impedance of the resonator can be reduced so as to allow the resonator to be applied to a desired device. A communication apparatus having a filter comprising such a micro-resonator. The micro-reson...  
WO2005020434A3
A micromechanical resonator (400, 1125) is formed on a substrate (120). The resonator has a partial spherical shell (110) clamped on an outside portion of the shell to the substrate. In other embodiments, a flat disc or other shape may b...  
WO2005006432A3
The invention relates to the formation of vertical electrical through contacts in a support substrate, on the surface of which component structures are fixed, whereby the component structures are associated with contact surfaces, arrange...  
WO/2005/035436A2
A method of increasing a quality factor for a micromechanical resonator uses a laser beam to anneal the micromechanical resonator. In one embodiment, the micromechanical oscillator is formed by fabricating a mushroom shaped silicon oscil...  
WO2004059836A8
A longitudinal mode resonator that includes a substrate and a bar that is suspended relative to the substrate. The bar is suspended such that it is free to expand and contract longitudinally in response to the application of an electric ...  
WO/2005/034347A1
A surface acoustic wave device having a structure where an insulator layer is formed to cover an IDT electrode. The reflection coefficient of the IDT is sufficiently high and deterioration of the characteristics due to undesired ripple c...  
WO/2005/034344A1
Embodiments of the present invention form a weight­compensating/ tuning layer on a structure (e.g., a silicon wafer with one or more layers of material (e.g., films)) having variations in its surface topology. The variations in surface ...  
WO/2005/034345A1
In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one refle...  
WO/2005/031861A1
A structure and method of making a capped chip is provided. A capped chip includes a chip having a front surface, and a plurality of bond pads exposed at the front surface. A cap member has a top surface, a bottom surface opposite the to...  
WO/2005/031863A1
Capped chips and methods of forming a capped chip are provided in which electrical interconnects are made by conductive elements which extend from bond pads of a chip at least partially through a plurality of through holes of a cap. The ...  
WO/2005/031862A1
A method of making one or more sealed assemblies is provided which includes assembling a first element to a second element so that a bottom surface of the first element faces downwardly toward a front surface of the second element and a ...  
WO/2005/029700A1
By differentiating the output phase by 180 degrees, it is possible to output an unbalanced input as a balanced output. A micro electric machine system resonator (MEMS resonator (101)) includes: an input electrode (111) for inputting a si...  
WO2004025832A8
A bulk acoustic wave resonator comprising a substrate (5), a Bragg reflector (4), a top (1) and a bottom (3) electrode and a piezoelectric layer (2) with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The ...  
WO/2005/020435A1
A piezoelectric resonant component utilizing a basic wave and having good characteristics in which a spurious resonance due to a high order mode is suppressed. The piezoelectric resonant component (1) comprises a plurality of resonance e...  
WO/2005/020482A2
A source signal is converted into a time-variant temperature field with transduction into mechanical motion. In one embodiment, the conversion of a source signal into the time-variant temperature field is provided by utilizing a micro-fa...  
WO/2005/020434A2
A micromechanical resonator (400, 1125) is formed on a substrate (120). The resonator has a partial spherical shell (110) clamped on an outside portion of the shell to the substrate. In other embodiments, a flat disc or other shape may b...  
WO/2005/018090A1
The invention relates to a microsystem incorporating at least one resonant structure, produced in a silicon base that is fixed to a silicon substrate (20) with which it forms a cavity, said silicon base also being fixed to a cover (60) b...  
WO/2005/015735A2
A micromechanical resonator device and a method of making the micromechanical resonator device, as well as other extensional mode devices are provided wherein anchor losses are minimized by anchoring at one or more side nodal points of t...  
WO/2005/015736A1
An electromechanical filter capable of being miniaturized by employing a micro-oscillator of a carbon nanotube, or the like, excellent in electric conductivity and capable of selecting a signal of a desired frequency. The electromechanic...  
WO/2005/013353A2
The invention relates to a method for producing reduced-thickness electronic components. The inventive method consists in placing at least one electronic component (1) by the active face thereof provided with electric contacts (10, 11) o...  
WO/2005/011115A1
In the step of the occurrence of a single cancer cell at the early stage in, for example, the liver of the human body, a protein characteristic to liver cancer is discharged from the caner cell occurring in the liver and dissolved in the...  
WO/2005/011116A1
An MEMS type resonator in which suction of a beam to a substrate due to a wet process is suppressed during an MEMS fabrication process and unnecessary oscillation modes other than a required oscillation mode during operation do not exist...  
WO2004079904A3
A monolithic electronic device includes a substrate, a semi-insulating, piezoelectric Group III-nitride epitaxial layer formed on the substrate, a pair of input and output interdigital transducers forming a surface acoustic wave device o...  
WO/2005/008888A1
A tuning fork type vibrator comprises a basal part and leg parts extending therefrom. A groove is formed in a main surface of each leg part. An in-groove electrode is formed in the groove, while a side surface electrode is formed in a si...  
WO/2005/008889A1
The present invention relates to a film bulk acoustic wave device and a method of manufacturing the same, wherein comprising an acoustic reflective layer which is formed on a substrate by removing a sacrificial layer on the substrate and...  
WO/2005/006548A1
A piezoelectric element plate is rectangular as seen from above. Its upper surface is formed to be flat, while its lower surface has a beveling arc applied thereto. The piezoelectric element plate is mounted on a package by adsorbing one...  
WO/2005/006432A2
The invention relates to the formation of vertical electrical through contacts in a support substrate, on the surface of which component structures are fixed, whereby the component structures are associated with contact surfaces, arrange...  
WO/2005/004326A1
An MEMS type oscillator capable of using a primary oscillation mode while enhancing the S/N ratio of an output signal, its fabricating process, a filter, and a highly reliable communication unit employing that filter. The MEMS type oscil...  
WO/2005/001948A1
A MEMS resonator includes an annular resonator body defined by an inner radius and an outer radius, a first electrode positioned within the inner radius and spaced from the resonator body, and a second electrode positioned around the ann...  
WO2004013893B1
A piezoelectric resonator (205) is disclosed. In one embodiment the piezo electric resonator includes a semiconductor material (206) an electrode (210) and a piezo electric material (208) disposed between the semiconductor material and t...  
WO/2004/109912A1
An SAW device has a hermetically sealed space defined under an IDT by covering the outer surface of an SAW chip mounted on a mounting board with a resin sheet softened by heating and by filling the SAW chip with resin. The SAW device has...  
WO/2004/103932A1
A mask (14) having a predetermined film thickness distribution is arranged on a piezoelectric material substrate (11), which is subjected to dry etching by using a working speed difference between the piezoelectric material substrate (11...  

Matches 501 - 550 out of 19,038