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Patent Searching and Data


Matches 501 - 550 out of 11,180

Document Document Title
WO/2002/093738
A nanomechanical actuator/oscillator system (10) comprises a substrate (12) having a first electrode (14) and a second electrode (16) and a nanobimorph (18) which includes first and second self-assembled nanotubes (20, 22). System (10) i...  
WO/2002/087080
A surface acoustic wave device comprising a piezoelectric substrate, a comb−shaped electrode constituting an IDT on the substrate, a reflector electrode arranged close in the direction of the propagation of a surface wave generated by ...  
WO/2002/082645
An elastic wave element comprising a piezoelectric, at least one electrode formed on the piezoelectric, a corrosion resistant layer formed on the surface of the electrode, a hydrophilic film formed on the corrosion resistant layer, and a...  
WO/2002/082644
An acoustic wave device includes a piezoelectric element, at least one electrode formed on the piezoelectric element, a compound layer formed on the surface of the electrode, and a dielectric film formed on the compound layer. The compou...  
WO/2002/081365
A first type of MEMS resonator (1400) adapted to be fabricated on a SOI wafer (200) is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Ov...  
WO/2002/080361
A tunable nanomechanical filter system (10) comprising an array of nanofeatures (18), such as nanotubes, where the nanofeatures (18) are in signal communication with means for inducing a difference in charge density in the nanofeature (1...  
WO/2002/080360
A tunable nanomechanical oscillator device (10) and system is provided. The nanomechanical oscillator device (10) comprising at least one nanoresonator, such as a suspended nanotube (24), designed such that injecting charge density into ...  
WO/2002/063763
A surface acoustic wave device for realizing a device miniaturization such as area reduction or ridge lowering, a cost reduction, and an improvement in reliability. This surface acoustic wave device comprises a piezoelastic substrate (1)...  
WO/2002/061833
The aim of the invention is to use a slow dissolving ceramic substrate for components mounted according to the Flip-Clip method, particularly surface wave components, whereby multi-layered metallisations are optionally produced thereon b...  
WO/2002/061943
A surface acoustic wave (SAW) device which has a piezo-electric substrate, an interdigital transducer (IDT) electrode provided on a first surface of the piezo-electric substrate and a resin coating covering the IDT electrode, wherein the...  
WO/2002/060054
An instrument for inspecting a surface acoustic wave device used as a high frequency filter in the field of mobile communication. The instrument comprises an electron gun (1) for generating and projecting an electron beam as primary elec...  
WO/2002/058233
According to the present invention, packaging of the filters, especially the acoustic wave filters, is performed by bonding the carrier (sbstrate) wafer carrying the manufactured filters with a second wafer, called capping wafer. Due to ...  
WO/2002/056466
A surface acoustic wave device comprises a piezoelectric substrate (12) of a rectangular plate shape for propagating a Rayleigh wave; a comb-like electrode (13) provided by forming an interdigital electrode on the piezoelectric substrate...  
WO/2002/056465
An SAW device restricted in electrical characteristic deterioration and excellent in moisture resistance. Many SAW elements each having an IDT electrode mainly containing aluminum are formed on a piezoelectric substrate. Then the piezoel...  
WO/2002/054592
An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second di...  
WO/2002/047263
A crystal oscillator module and method to manufacture the crystal oscillator module by sandwich method on a bottom-base, as a printed board (4), where the oscillator crystal (1) is for instance fixed onto the surface of the printed distr...  
WO/2002/045262
An acoustic wave device includes stripe-shaped electrodes (4, 5) of conductor on a piezoelectric substrate (1). Dielectric thin film (8) with a base of oxidation silicon is deposited on the electrodes (4, 5) and a reflector (9) of approp...  
WO/2002/045265
Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a su...  
WO/2002/042527
A surface acoustic wave element usable in a high frequency band, a diamond substrate having a piezoelectric thin film to be used in an optical element material, and a method for manufacturing it. The diamond substrate can be obtained by ...  
WO/2002/039537
A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means h...  
WO/2002/039583
The invention relates to an electronic device comprising an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cove...  
WO/2002/035702
In a surface acoustic wave (SAW) filter having a substrate and electrodes formed on the substrate, an electrode has a base layer, a first metal layer made of Al or an Al-based metal and oriented in a constant direction to the substrate, ...  
WO/2002/031974
A method of producing surface acoustic wave devices comprising the steps of forming a first film on a piezoelectric board, forming a second film on the first film, forming a resist pattern of predetermined shape on the second film, isotr...  
WO/2002/025811
The invention relates to a component having an acoustically active material, whose acoustic constants can be at least partially altered. The acoustically active material is located at least partially at a phase transition point and/or in...  
WO/2002/019520
A resonator with mechanical node reinforcement includes a substrate, an intermediate portion adjacent to the substrate, and a resonant portion adjacent to the intermediate portion. The intermediate portion may include multiple layers, su...  
WO/2002/016256
A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-drive, lateral micromechanical resonator with submicron elec...  
WO/2002/017482
A micromechanical resonator device and a micromechanical filter utilizing the same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of t...  
WO/2002/017481
A micromechanical resonator device is disclosed that utilizes competition between the thermal dependencies of geometrically tailored stresses and Young's modulus to: (1) reduce the temperature coefficient (TC¿f?) of the resonance freque...  
WO/2002/009131
The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), s...  
WO/2002/009160
High quality epitaxial layers (26) of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of ...  
WO/2002/009202
At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositi...  
WO/2002/007310
The invention concerns an acoustic wave device comprising a ferroelectric material layer (C) and a substrate. The invention is characterised in that the ferroelectric material is interposed between a first electrode (E1) deposited at the...  
WO/2002/007234
A lens-line type piezoelectric device thinner than the manufacture limit thickness, which is conventionally difficult to manufacture, and a method for manufacturing the same. The piezoelectric device has a vibrating part of at least two ...  
WO/2002/005424
A method of manufacturing a small surface mounting type surface acoustic wave device capable of easily providing a sealability and suitable for a flip chip bonding, comprising the steps of flip chip-bonding a surface acoustic wave device...  
WO/2002/005425
A method is provided by which filters consisting of a plurality of think film bulk acoustic resonators (FBAR) fabricated on a semiconductor wafer such as silicon or some other type of wafer can be hermetically packaged in a way that pres...  
WO/2002/001931
A multilayer substrate module to which an external ground node (20) supplies a reference ground potential (Vss) includes a plurality of ground lines (170-1, 170-2, 170-3), which correspond to a plurality of internal circuits (210, 220, 2...  
WO/2002/001714
A surface acoustic wave device to be used as a branching filter for handling high-frequency waves of several GHz in a mobile communication field can be manufactured by forming a metal film over a wafer-shaped piezoelectric substrate and ...  
WO/2001/099276
A bulk acoustic wave device has a number of resonator elements (14) which are laterally spaced such that a signal (26) applied between to one resonator element (14¿1?) at a resonant frequency of the device is coupled to the other resona...  
WO/2001/095486
An assembly and method for manufacturing individual microelectronic devices, such as surface acoustic wave devices, employs a unitary array of a nonconductive material having plural spaced cavities extending into the array, with a recess...  
WO/2001/091290
An electric filter comprises a plurality of thin film bulk acoustic resonants (10, 11) arranged in series and in parallel which have electrodes (24, 25) of different working area (L) and optionally a piezoelectric layer (23) of different...  
WO/2001/089084
A small multichip package is provided which includes a plurality of SAW elements of different frequency characteristics in a single package. A plurality of SAW elements are bonded face down to a package so that a line along which the SAW...  
WO/2001/083238
A system and method of precisely adjusting the properties of a device using a gas cluster ion beam 'GCIB' are described. Use of the invention permits the precise removal or addition of small amounts of material without significantly dama...  
WO/2001/078230
The invention describes a tunable filter arrangement with at least two resonators which are coupled to one another and of which at least one is connected to a capacitor with tunable capacitance. The electrical properties of the resonator...  
WO/2001/078229
The invention describes a tunable filter arrangement with a plurality of resonators which are coupled to one another and of which there is at least one which comprises a piezoelectric component made of a ferroelectric material and to whi...  
WO/2001/076064
A surface-acoustic-wave die includes a generally rectangular die that comprises a piezoelectric material, atop which is positioned a surface-acoustic-wave electrode pattern. The pattern has a generally rectangular footprint, and the foot...  
WO/2001/069781
A high power SAW device (10) includes an electrode (16, 19) positioned on a piezoelectric substrate (11). The electrode includes a bonding layer (30) of material deposited on and bonding with the substrate and a conductive structure (35)...  
WO/2001/063759
A method of manufacturing a piezoelectric filter with a resonator comprising a layer of a piezoelectric material (1) which is provided with an electrode (2, 3) on either side, which resonator is situated on an acoustic reflector layer (4...  
WO/2001/063758
A method of manufacturing a hybrid integrated circuit comprising a semiconductor element (1) and a piezoelectric filter (2), which are situated next to each other and connected to a carrier substrate (3). The semiconductor element compri...  
WO/2001/061847
The electronic device (10) of the invention has a first inductor (12) and a first capacitor (11). The capacitor (11) comprises a first capacitor electrode (21) in a first electrically conducting layer (3), a dielectric (26), and a second...  
WO/2001/061846
The invention relates to a hollow microbeam that is fabricated upon a base or pedestal. Processing of the hollow microbeam includes forming at least one hollow channel in the microbeam by removing temporary fillers after formation of the...  

Matches 501 - 550 out of 11,180