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Matches 501 - 550 out of 17,792

Document Document Title
WO/2003/005576A1
The invention relates to a frequency-tunable resonator comprising a base body with at least one piezoelectric layer (2) and at least one semiconducting layer (1,3). The electrodes (E1, E2) that are configured on opposing principal surfac...  
WO/2003/005577A1
A method for manufacturing a surface acoustic wave device comprising a first conductive pattern and a second conductive pattern having different thicknesses on the same piezoelectric substrate. The surface acoustic wave device having a p...  
WO/2003/002450A2
A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducin...  
WO/2003/001666A1
A surface acoustic wave device, wherein comb electrodes (2) and reflector electrodes (3) are surrounded by a plurality of auxiliary electrodes (6a, 6b) electrically independent of each other and having different widths according to the p...  
WO/2002/095085A1
The invention relates to a method for producing a layer with a locally adapted or predefined layer thickness profile. Said method comprises the following steps: a) at least one layer (7) is applied to a substrate, b) a removal profile is...  
WO/2002/095939A1
A resonator device comprises a piezoelectric resonator (10) with a detuning layer sequence (52), arranged on the piezoelectric resonator (10). The detuning layer sequence (52) comprises at least one first layer (52A) with a high acoustic...  
WO/2002/093549A1
A high performance thin film acoustic resonator with excellent electromechanical coupling factor and acoustic quality factor, wherein a recess (52) is formed in a substrate obtained by forming a silicon oxide thin layer (53) on the surfa...  
WO/2002/093738A2
A nanomechanical actuator/oscillator system (10) comprises a substrate (12) having a first electrode (14) and a second electrode (16) and a nanobimorph (18) which includes first and second self-assembled nanotubes (20, 22). System (10) i...  
WO/2002/087080A1
A surface acoustic wave device comprising a piezoelectric substrate, a comb−shaped electrode constituting an IDT on the substrate, a reflector electrode arranged close in the direction of the propagation of a surface wave generated by ...  
WO/2002/082645A1
An elastic wave element comprising a piezoelectric, at least one electrode formed on the piezoelectric, a corrosion resistant layer formed on the surface of the electrode, a hydrophilic film formed on the corrosion resistant layer, and a...  
WO/2002/082644A1
An acoustic wave device includes a piezoelectric element, at least one electrode formed on the piezoelectric element, a compound layer formed on the surface of the electrode, and a dielectric film formed on the compound layer. The compou...  
WO/2002/081365A2
A first type of MEMS resonator (1400) adapted to be fabricated on a SOI wafer (200) is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Ov...  
WO/2002/080361A1
A tunable nanomechanical filter system (10) comprising an array of nanofeatures (18), such as nanotubes, where the nanofeatures (18) are in signal communication with means for inducing a difference in charge density in the nanofeature (1...  
WO/2002/080360A1
A tunable nanomechanical oscillator device (10) and system is provided. The nanomechanical oscillator device (10) comprising at least one nanoresonator, such as a suspended nanotube (24), designed such that injecting charge density into ...  
WO/2002/063763A1
A surface acoustic wave device for realizing a device miniaturization such as area reduction or ridge lowering, a cost reduction, and an improvement in reliability. This surface acoustic wave device comprises a piezoelastic substrate (1)...  
WO/2002/061833A2
The aim of the invention is to use a slow dissolving ceramic substrate for components mounted according to the Flip-Clip method, particularly surface wave components, whereby multi-layered metallisations are optionally produced thereon b...  
WO/2002/061943A1
A surface acoustic wave (SAW) device which has a piezo-electric substrate, an interdigital transducer (IDT) electrode provided on a first surface of the piezo-electric substrate and a resin coating covering the IDT electrode, wherein the...  
WO/2002/060054A1
An instrument for inspecting a surface acoustic wave device used as a high frequency filter in the field of mobile communication. The instrument comprises an electron gun (1) for generating and projecting an electron beam as primary elec...  
WO/2002/058233A1
According to the present invention, packaging of the filters, especially the acoustic wave filters, is performed by bonding the carrier (sbstrate) wafer carrying the manufactured filters with a second wafer, called capping wafer. Due to ...  
WO/2002/056466A1
A surface acoustic wave device comprises a piezoelectric substrate (12) of a rectangular plate shape for propagating a Rayleigh wave; a comb-like electrode (13) provided by forming an interdigital electrode on the piezoelectric substrate...  
WO/2002/056465A1
An SAW device restricted in electrical characteristic deterioration and excellent in moisture resistance. Many SAW elements each having an IDT electrode mainly containing aluminum are formed on a piezoelectric substrate. Then the piezoel...  
WO/2002/054592A2
An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second di...  
WO/2002/047263A1
A crystal oscillator module and method to manufacture the crystal oscillator module by sandwich method on a bottom-base, as a printed board (4), where the oscillator crystal (1) is for instance fixed onto the surface of the printed distr...  
WO/2002/045262A1
An acoustic wave device includes stripe-shaped electrodes (4, 5) of conductor on a piezoelectric substrate (1). Dielectric thin film (8) with a base of oxidation silicon is deposited on the electrodes (4, 5) and a reflector (9) of approp...  
WO/2002/045265A1
Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a su...  
WO/2002/042527A1
A surface acoustic wave element usable in a high frequency band, a diamond substrate having a piezoelectric thin film to be used in an optical element material, and a method for manufacturing it. The diamond substrate can be obtained by ...  
WO/2002/039537A1
A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means h...  
WO/2002/039583A1
The invention relates to an electronic device comprising an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cove...  
WO/2002/035702A1
In a surface acoustic wave (SAW) filter having a substrate and electrodes formed on the substrate, an electrode has a base layer, a first metal layer made of Al or an Al-based metal and oriented in a constant direction to the substrate, ...  
WO/2002/031974A1
A method of producing surface acoustic wave devices comprising the steps of forming a first film on a piezoelectric board, forming a second film on the first film, forming a resist pattern of predetermined shape on the second film, isotr...  
WO/2002/025811A1
The invention relates to a component having an acoustically active material, whose acoustic constants can be at least partially altered. The acoustically active material is located at least partially at a phase transition point and/or in...  
WO/2002/019520A2
A resonator with mechanical node reinforcement includes a substrate, an intermediate portion adjacent to the substrate, and a resonant portion adjacent to the intermediate portion. The intermediate portion may include multiple layers, su...  
WO/2002/016256A2
A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-drive, lateral micromechanical resonator with submicron elec...  
WO/2002/017482A2
A micromechanical resonator device and a micromechanical filter utilizing the same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of t...  
WO/2002/017481A2
A micromechanical resonator device is disclosed that utilizes competition between the thermal dependencies of geometrically tailored stresses and Young's modulus to: (1) reduce the temperature coefficient (TC¿f?) of the resonance freque...  
WO/2002/009131A2
The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), s...  
WO/2002/009160A2
High quality epitaxial layers (26) of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of ...  
WO/2002/009202A2
At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositi...  
WO/2002/007310A1
The invention concerns an acoustic wave device comprising a ferroelectric material layer (C) and a substrate. The invention is characterised in that the ferroelectric material is interposed between a first electrode (E1) deposited at the...  
WO/2002/007234A1
A lens-line type piezoelectric device thinner than the manufacture limit thickness, which is conventionally difficult to manufacture, and a method for manufacturing the same. The piezoelectric device has a vibrating part of at least two ...  
WO/2002/005424A1
A method of manufacturing a small surface mounting type surface acoustic wave device capable of easily providing a sealability and suitable for a flip chip bonding, comprising the steps of flip chip-bonding a surface acoustic wave device...  
WO/2002/005425A1
A method is provided by which filters consisting of a plurality of think film bulk acoustic resonators (FBAR) fabricated on a semiconductor wafer such as silicon or some other type of wafer can be hermetically packaged in a way that pres...  
WO/2002/001931A1
A multilayer substrate module to which an external ground node (20) supplies a reference ground potential (Vss) includes a plurality of ground lines (170-1, 170-2, 170-3), which correspond to a plurality of internal circuits (210, 220, 2...  
WO/2002/001714A1
A surface acoustic wave device to be used as a branching filter for handling high-frequency waves of several GHz in a mobile communication field can be manufactured by forming a metal film over a wafer-shaped piezoelectric substrate and ...  
WO/2001/099276A1
A bulk acoustic wave device has a number of resonator elements (14) which are laterally spaced such that a signal (26) applied between to one resonator element (14¿1?) at a resonant frequency of the device is coupled to the other resona...  
WO/2001/095486A1
An assembly and method for manufacturing individual microelectronic devices, such as surface acoustic wave devices, employs a unitary array of a nonconductive material having plural spaced cavities extending into the array, with a recess...  
WO/2001/091290A1
An electric filter comprises a plurality of thin film bulk acoustic resonants (10, 11) arranged in series and in parallel which have electrodes (24, 25) of different working area (L) and optionally a piezoelectric layer (23) of different...  
WO/2001/089084A1
A small multichip package is provided which includes a plurality of SAW elements of different frequency characteristics in a single package. A plurality of SAW elements are bonded face down to a package so that a line along which the SAW...  
WO/2001/083238A1
A system and method of precisely adjusting the properties of a device using a gas cluster ion beam 'GCIB' are described. Use of the invention permits the precise removal or addition of small amounts of material without significantly dama...  
WO/2001/078230A1
The invention describes a tunable filter arrangement with at least two resonators which are coupled to one another and of which at least one is connected to a capacitor with tunable capacitance. The electrical properties of the resonator...  

Matches 501 - 550 out of 17,792