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WO/2024/079575A1 |
Provided is a semiconductor device having a novel configuration. This semiconductor device has: a first element layer having a bit line drive circuit; a second element layer having a first switch circuit, a first memory cell, and first w...
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WO/2024/081509A1 |
Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing p...
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WO/2024/050912A9 |
An apparatus and method for extracting an electron microscope sample. The apparatus comprises a body (1), a needle tube (2), and a first pressure adjustment mechanism (3). The body (1) is provided with a first channel (12) and a liquid s...
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WO/2024/081194A1 |
A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl c...
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WO/2024/077908A1 |
The present application relates to the technical field of chip packaging, and discloses a co-packaged optics structure and a manufacturing method therefor. The method comprises: providing a redistributed layer which is integrated with an...
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WO/2024/077827A1 |
The present disclosure relates to a semiconductor structure preparation method and a semiconductor structure. The semiconductor structure preparation method comprises: providing a substrate; according to a preset rule, forming, on the su...
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WO/2024/081453A1 |
Novel high purity dimethylaluminium chloride compositions are provided that are suitable for semiconductor applications, such as atomic layer etch and aluminum ion implantation. The reduction or minimization of specified gaseous impuriti...
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WO/2024/078682A1 |
The disclosure relates to a build-up substrate (110) for a power package (100). The build-up substrate (110) comprises an electrically insulating layer (120) and a plurality of electrically conductive pads (131a-e) encapsulated in the el...
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WO/2024/080148A1 |
Provided is a method for manufacturing a semiconductor device , the method involving: using a semiconductor element to be inspected as a first semiconductor element, and using a semiconductor element for acquiring teaching data as a seco...
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WO/2024/077586A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a pixel point recognition policy, recognizing, from an i-th lay...
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WO/2024/077761A1 |
A heat dissipation apparatus used in a gas-liquid mixed medium and a preparation method therefor, relating to the field of heat dissipation. The heat dissipation apparatus comprises a heat dissipation plate and a plurality of supporting ...
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WO/2024/081183A1 |
A substrate processing chamber includes a pedestal and a baffle. The pedestal is arranged in the substrate processing chamber. The pedestal includes a base portion and a stem portion. The base portion is greater in diameter than the stem...
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WO/2024/078665A1 |
A method according to the invention for applying an adhesive layer (28) to a module-carrier tape (12) provided with a multiplicity of chip modules (8) comprises the following steps, with surfaces (14) of the chip modules (8) being raised...
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WO/2024/078079A1 |
The present invention relates to the technical field of semiconductor accessory manufacturing, and provides a semiconductor device assembly and a preparation method therefor and the use thereof. The semiconductor device assembly comprise...
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WO/2024/078830A1 |
Disclosed herein are embodiments that relate to an electrostatic wafer clamps and methods for forming and modifying electrode structures for electrostatic wafer clamps. Wafer clamps include electrode structures in a dielectric layer with...
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WO/2024/077552A1 |
Disclosed in the present application are a 3D stacked packaging structure and a manufacturing method therefor. The 3D stacked packaging structure comprises a bottom-layer structure and a top-layer structure, wherein the top-layer structu...
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WO/2024/079116A1 |
Device for conveying a wafer-shaped article, comprising: a support having a support surface; one or more gas channels in the support having one or more outlets in the support surface; and one or more grooves in the support surface for re...
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WO/2024/077714A1 |
Embodiments of the present disclosure relate to the field of semiconductors, and provide a manufacturing method for a semiconductor structure, and a structure thereof. The manufacturing method for a semiconductor structure comprises: pro...
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WO/2024/078142A1 |
An online characterization method for a multi-junction solar cell comprises: by means of irradiating a multi-junction solar cell by using at least one characteristic light corresponding to subcells of the multi-junction solar cell so as ...
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WO/2024/080022A1 |
[Problem] To adjust energy of only ions of a specific type that are included in plasma. [Solution] This plasma treatment device comprises: a first electrode and a second electrode that face the inside of a treatment container which accom...
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WO/2024/079791A1 |
A surface inspecting device (1) according to the present invention comprises: a plate-shaped sample holding member (3) capable of holding a sample (2); a rotation drive unit (19) for rotating the sample holding member (3); a supporting m...
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WO/2024/080531A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
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WO/2024/079880A1 |
This wafer stage 10 is provided with: a ceramic plate 20 which is provided, on the upper surface thereof, with at least a wafer stage part 22; a cooling plate 30 which is bonded to the lower surface of the ceramic plate 20, and has a coo...
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WO/2024/078073A1 |
Disclosed in the present disclosure are a semiconductor device, and a manufacturing method therefor. The semiconductor device comprises: a substrate, a buffer layer, a channel layer and a barrier layer which are stacked successively; a c...
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WO/2024/078125A1 |
A composite trench-type Schottky diode device and a fabrication method therefor. The device comprises a substrate (201), an epitaxial layer (202), a trench structure array (203), a Schottky metal layer (204), a front metal electrode laye...
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WO/2024/078946A1 |
Device comprising: a surface for supporting a wafer; a gas inlet in the surface; a plurality of suction devices for gripping the wafer above the surface and drawing or pulling the wafer towards the surface; a shared vacuum line in fluid ...
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WO/2024/078883A1 |
In a method to obtain information to control a manufacturing process for a stacked semiconductor device including several semiconductor layers requiring electrically interconnection, sample data of a semiconductor device sample to be ins...
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WO/2024/080249A1 |
The present disclosure relates to a resin film-forming material comprising a compound A that includes two or more first groups and has an ester bond and a compound B that includes two or more second groups capable of forming a bond with ...
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WO/2024/081210A1 |
Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a process chamber configured to process a substrate, a substrate support comprising a heat sink configur...
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WO/2024/079851A1 |
A semiconductor memory device according to an embodiment of the present invention includes: a first chip including a first pillar having a first memory cell and a second memory cell connected in series; a second chip including a second p...
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WO/2024/080189A1 |
Provided is a top ring with which it is possible to improve uniformity of polishing.　This top ring for holding a substrate comprises: a base member connected to a rotary shaft; a substrate suctioning member including a porous member ha...
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WO/2024/078175A1 |
Disclosed are a gas distributor, a gas delivery apparatus, and a film processing apparatus thereof. The gas distributor comprises a first surface and a second surface, which are oppositely disposed; a gas diffusion channel is provided in...
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WO/2024/079975A1 |
This device for manufacturing a semiconductor device (10) comprises a reference jig (40) larger than a semiconductor chip (60), and a mounting tool (15) that individually suctions and transfers the semiconductor chip (60) and the referen...
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WO/2024/077803A1 |
A method for preparing a semiconductor device. The method comprises: providing a substrate, wherein the substrate is provided with a first-type well region and a second-type well region; performing first ion doping, forming a second-type...
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WO/2024/078637A1 |
Provided in the present invention are a high-voltage-resistance and low-on-resistance IGZO thin-film transistor and a preparation method therefor. Hydrogen ion doping is performed on an IGZO low-resistance drift region of a device, such ...
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WO/2024/079780A1 |
The purpose of the present invention is to provide a technology that is capable of suppressing the extension of a crack to the lower side of an interlayer insulating film when external stress associated with heat shrinkage stress is appl...
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WO/2024/080255A1 |
The present invention discloses a method for producing a semiconductor device. The method for producing a semiconductor device comprises: a resin film formation step for forming, on a semiconductor wafer, a resin film including a resin w...
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WO/2024/081201A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention...
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WO/2024/078972A1 |
There is described a component carrier (100), wherein the component carrier (100) comprises: i) a stack (101) comprising at least one electrically conductive layer structure (104) and/or at least one electrically insulating layer structu...
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WO/2024/081135A1 |
A system for performing preventive maintenance of a processing chamber of a substrate processing system using atmospheric air comprises a first plurality of valves and manifolds, a second plurality of valves and manifolds, and a controll...
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WO/2024/079776A1 |
The present invention is a plasma processing method that provides a method that can build a self-limited process with excellent mass producibility in a cycle etching method that repeats an adsorption step for forming a reaction layer on ...
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WO/2024/081316A1 |
In wafer containers, a latching mechanism is provided to secure a wafer cassette within the container. The latching mechanism is driven by contact between an inner surface of the dome of the pod to contact the wafer cassette at a horizon...
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WO/2024/081174A1 |
The present disclosure relates to methods for protecting semiconductor substrate surfaces by coating the surfaces with a stimulus responsive polymer layer, the stimulus responsive polymer layer composed of copolymers with oxymethylene-co...
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WO/2024/077393A1 |
The present invention discloses methods to reduce a surface reflection and improve a contrast in an optoelectronic system with microdevices that may comprise of microLED's, microsensors, MEMS, or another type of semiconductor or optoelec...
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WO/2024/080257A1 |
The present disclosure relates to a method for manufacturing a semiconductor device, the method comprising: a first laminate production step for producing a first laminate including a semiconductor wafer, a resin layer including a resin ...
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WO/2024/080532A2 |
The present invention relates to plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and manufacturing methods therefor and, particularly, to plasma-resistant glass, an inner chamber component fo...
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WO/2024/079586A1 |
The present invention provides a semiconductor device which achieves miniaturization or high integration. This semiconductor device comprises a first insulator on a substrate, an oxide semiconductor that covers the first insulator, a fir...
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WO/2024/078281A1 |
A device packaging method, a device packaging module and an electronic device, which relate to the field of device packaging and aim to reduce the size of the device packaging module. The specific solution is as follows: the device packa...
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WO/2024/078227A1 |
Provided in the specific embodiments of the present invention are an organosilicon nanometer hydrophobic film layer and a preparation method therefor. The organosilicon nanometer hydrophobic film layer is formed by the plasma polymerizat...
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WO/2024/077728A1 |
The present disclosure relates to the technical field of semiconductors, and provides a manufacturing method for a semiconductor structure, and the semiconductor structure. The manufacturing method for the semiconductor structure compris...
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