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WO/2024/069683A1 |
Provided is technology that makes it possible to improve film thickness uniformity and burying properties in the formation of a film. In the present invention, a cycle in which the following steps are executed in the following order on a...
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WO/2024/070322A1 |
The present invention provides a glass substrate in which it is possible to form a through-electrode having favorable adhesion. To achieve this, the glass substrate of the present invention has a first surface and a second surface, and i...
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WO/2024/071021A1 |
This semiconductor device which is provided with a capacitor (19) comprises: a substrate (11); and two electrodes (21, 24) and a dielectric film (22) that is arranged between the two electrodes, the two electrodes and the dielectric film...
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WO/2024/069742A1 |
This wafer placement table 10 comprises a ceramic plate 20 that has a wafer placement surface 22a and has an electrode embedded therein, a cooling plate 30 that has a coolant flow path 32 and is made of a metal-ceramic composite material...
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WO/2024/070958A1 |
This signal transmission device comprises a first chip that includes a first transistor, a second chip, a plurality of first lead terminals, a plurality of second lead terminals, an inter-chip wire that electrically connects the first ch...
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WO/2023/119165A9 |
A compound, and a layered semiconductor device comprising a patterning coating provided in a first portion of a lateral aspect of the device, the patterning coating comprising the compound. The patterning coating is adapted to impact a p...
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WO/2024/070309A1 |
To properly remove the edge portion of a first substrate in consideration of a non-joint region in a notch portion formed on the first substrate in a polymeric substrate in which the first substrate and a second substrate are joined to e...
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WO/2024/072701A1 |
A method and apparatus for cooling a semiconductor chamber are described herein. A semiconductor chamber component, includes a powered region, a grounded region, and a fluid conduit disposed within the semiconductor chamber component and...
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WO/2024/070369A1 |
A connected structure 1 wherein electrodes 11 of an electronic component 10 are connected to electrodes 21 of a substrate 20 by a connecting material 2' derived from electroconductive particles coated with a pressure-sensitive adhesive m...
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WO/2024/071073A1 |
This substrate treatment system comprises a plasma treatment device, a decompression transfer device connected to the plasma treatment device, and a control device, wherein the plasma treatment device includes: a treatment container conf...
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WO/2024/070831A1 |
The present invention provides a polishing composition that allows etching to proceed efficiently. Provided is a polishing composition containing: silica particles as the abrasive grains; a basic compound; and water. Here, the basic comp...
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WO/2024/068454A1 |
A semiconductor chip device includes a substrate with a back end of line layer and a backside power delivery network. An input power line is electrically coupled to the backside power delivery network. Dummy transistors are positioned in...
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WO/2024/070833A1 |
Provided is a technique for adjusting the exposure sensitivity of a resist film. A substrate processing method is provided. This method is a substrate processing method comprising: (a) a step for providing a substrate having a base fil...
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WO/2024/066567A1 |
Embodiments of the present application relate to the technical field of semiconductors, and provide a semiconductor structure and a manufacturing method therefor, and an electronic device, for use in further improving the electron mobili...
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WO/2024/066277A1 |
Disclosed are a semiconductor structure preparation method and a semiconductor structure. The method comprises: providing a substrate; forming target bit line pillars on the substrate; forming a first dielectric layer covering the surfac...
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WO/2024/065149A1 |
A nitride-based semiconductor device (1A) includes a first III-V nitride-based semiconductor layer, a second III-V nitride-based semiconductor layer, a gate dielectric layer (16), and a gate electrode (40). The second III-V nitride-based...
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WO/2024/067668A1 |
The present application discloses a circuit board apparatus and an electronic device. The disclosed circuit board apparatus comprises a circuit board, a first chip, and a cooling element; the circuit board is provided with an accommodati...
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WO/2024/073015A1 |
A reference optical image of a die is determined based on a design file with a deep convolutional neural network for image-to-image translation. The reference optical image is subtracted from the target image thereby generating a differe...
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WO/2024/072569A1 |
A method of processing a substrate that includes: flowing dioxygen (O2) and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including an organic layer and a patterned etch mask; sustaining...
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WO/2024/066885A1 |
Disclosed in the present invention are an etching method for a substrate, and a semiconductor device thereof. The method comprises the following steps: transferring a substrate into a processing chamber; and introducing an etching gas an...
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WO/2024/070132A1 |
This method for manufacturing a semiconductor device includes: a step for bonding a laminate that includes a back grinding tape, which includes a base material and an adhesive layer formed on the base material, and a glue layer formed on...
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WO/2024/070304A1 |
Disclosed is a communication system comprising a main device, a plurality of subordinate devices, and a calculation device. A data frame that is transmitted to the plurality of subordinate devices includes a plurality of datagrams for th...
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WO/2024/071209A1 |
A vibrating body according to an embodiment is used for cleaning a substrate. A contact portion of the vibrating body with a liquid on a surface of the substrate has a region which is inclined with respect to an end of the vibrating body...
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WO/2024/072564A1 |
A method of processing a substrate that includes: flowing dioxygen (O2) and a hydrogen-containing gas into a plasma processing chamber that is configured to hold the substrate, the substrate including an organic layer and a patterned etc...
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WO/2024/070233A1 |
This learning device includes: an experimental data acquisition unit that acquires a first processing amount indicating the difference in film thickness between before and after processing of a coating film, after the coating film has be...
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WO/2024/066221A1 |
Disclosed are a semiconductor structure, and a method for manufacturing the semiconductor structure. The semiconductor structure comprises: a carrier layer, a barrier layer, a solder layer and an adhesive layer. The barrier layer is loca...
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WO/2024/067197A1 |
A semiconductor device includes a substrate having a first region and a second region separated from the first region by distance to define a space therebetween. A first semiconductor device including a gate dielectric is on the first re...
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WO/2024/071285A1 |
The present invention addresses the problem of providing: a method for manufacturing a semiconductor device, which has excellent removability of defects on tungsten when applied to an object to be processed that contains tungsten; and a ...
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WO/2024/070583A1 |
The present invention provides a high-precision actuator which has a small vertical size and in which backlash is suppressed. An actuator 1 comprises a reduction gear section and a motor section. In the reduction gear section, an annul...
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WO/2024/070439A1 |
This electronic element comprises a body portion, a first electrode disposed on one side in a first direction of the body portion, and a first bonding layer stacked on the first electrode. The first bonding layer has a first protruding p...
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WO/2024/070300A1 |
This rotation mechanism is provided with a first portion and a second portion that rotates relative to the first portion about the rotation axis. One of the first portion and the second portion has a cylindrical member and a transmission...
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WO/2024/066167A1 |
Disclosed in embodiments of the present disclosure are a manufacturing method for a semiconductor structure and a semiconductor structure. The manufacturing method for the semiconductor structure comprises: providing a substrate, wherein...
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WO/2024/070683A1 |
This film forming method includes: preparing a substrate having a resist film in the upper surface of which an opening is formed; supplying the substrate with a metal-containing gas that contains a metal, thereby causing the metal to per...
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WO/2024/072660A1 |
Methods and systems for calibrating simulated measurement signals generated by a parametric measurement model are described herein. Regression on real measurement signals is performed using a parametric model. The residual fitting error ...
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WO/2024/065989A1 |
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate; bit line structures, the bit...
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WO/2024/073390A1 |
A method of forming features in stack with a silicon containing layer below a mask is provided. Features are etched into the stack. A post etch plasma treatment is provided to reduce surface roughness of sidewalls of the features.
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WO/2024/066230A1 |
Disclosed are a semiconductor structure and a preparation method therefor. In the semiconductor structure, a base (10) comprises a substrate (11), and two adjacent gate structures (13), which are located on the substrate (11), wherein th...
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WO/2024/069277A1 |
A VTFET is provided on a wafer. A backside power delivery network is on a backside of the wafer. A first backside contact is connected to a bottom source/drain region of the VTFET and a first portion of the backside power delivery networ...
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WO/2024/072570A1 |
Embodiments of the disclosure relate to techniques and apparatus for reducing out-of-plane distortion (OPD) in a substrate, as well as control of the effects of OPD and the effects that the modifications made to the substrate to correct ...
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WO/2024/069684A1 |
To provide a semiconductor device manufacturing system and a semiconductor device manufacturing method having an improved processing yield, the semiconductor manufacturing system comprises a semiconductor device manufacturing device and ...
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WO/2024/066137A1 |
The present application relates to an array substrate, a display panel, and a method for forming the array substrate. The array substrate comprises: a base; and a device layer stacked on one side of the base in the thickness direction of...
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WO/2024/070319A1 |
The purpose of the present invention is to provide a glass substrate with which it is possible to form a through-electrode provided with excellent transmission characteristics, and a multilayer wiring substrate equipped with such a glass...
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WO/2024/071693A1 |
The present invention relates to a substrate raising/lowering module, a substrate processing module including same, and a substrate processing system. Disclosed is a raising/lowering module (200) characterized by comprising: a substrate ...
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WO/2024/072777A1 |
The disclosure relates to a substrate support assembly for reducing the evacuation time when using argon gas. In one embodiment, a substrate support assembly includes a porous plug within the substrate support assembly. The porous plug i...
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WO/2024/071417A1 |
Provided is a dry etching residue removing solution containing: at least one oxidizer selected from the group consisting of hypobromite ions, bromate ions, bromite ions, hypochlorite ions, chlorate ions, and chlorite ions; at least one m...
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WO/2024/067380A1 |
The present invention provides a gas delivery assembly and a gas-phase reaction device. The gas delivery assembly comprises an internal gas delivery assembly located in the middle area of the gas delivery assembly and a peripheral gas de...
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WO/2024/067187A1 |
Disclosed in the present invention are a wafer boat and a semiconductor process apparatus. The disclosed wafer boat comprises a support and a wafer bearing device, wherein the wafer bearing device comprises an edge bearing portion and an...
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WO/2024/071205A1 |
Provided is a method for forming a silicon oxide film, the method including a preparation step for preparing a substrate within a reactor, a first introduction step for introducing at least one silicon compound expressed by formula (1) i...
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WO/2024/066431A1 |
The present invention relates to a growth substrate, a display panel and a manufacturing method therefor. The growth substrate comprises a substrate (11). The substrate (11) comprises a plurality of chip growth regions (111) which are ar...
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WO/2024/069446A1 |
A method for mounting a fin system in a power module includes: sintering a fin system to a first base substrate, the fin system comprising a plurality of fins attached to and extending away from a base plate; sintering a first power swit...
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