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WO/2017/077870A1 |
[Problem] To selectively detect a magnetic field to be detected, without separately providing a sensor for detecting an environmental magnetic field. [Solution] The present invention is provided with: a magnetic field detection unit 10 t...
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WO/2017/076763A1 |
Disclosed is a magnetic tunnel diode (100) having a tunnel junction (160) that comprises a semimetallic magnetic layer (108), a tunnel barrier (110) and a layer (112) made of a semiconductor without any spin excitation gap. Also disclose...
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WO/2017/078877A1 |
Magnetic tunnel junction (MTJ) devices with a heterogeneous free layer structure particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure (...
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WO/2017/075282A1 |
This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidenc...
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WO/2017/068611A1 |
The present invention provides a production method for a magnetoresistance effect element, by which throughput can be improved and a high MR ratio can be obtained. A production method for a magnetoresistive element according to one embod...
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WO/2017/065282A1 |
According to the present invention, a substrate (W) which has a first magnetic layer (81), a second magnetic layer (82), and a tunnel insulating layer (83) that is formed of magnesium oxide and is arranged between the first magnetic laye...
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WO/2017/064394A1 |
The invention relates to a magnetic memory element, including: a contact (31) comprising a magnetic layer portion (34) between a conductive layer portion (32) and a non-magnetic layer portion (36), the magnetic layer having a magnetizati...
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WO/2017/060626A1 |
The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the...
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WO/2017/056559A1 |
Provided is a magnetoresistive device capable of achieving a high-frequency filter utilizing a magnetoresistive element. This magnetoresistive device comprises: a magnetoresistive element including a magnetization fixed layer, a spacer l...
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WO/2017/056560A1 |
Provided is a magnetoresistive device capable of achieving a high-frequency filter utilizing a magnetoresistive element. This magnetoresistive device comprises: a magnetoresistive element including a magnetization fixed layer, a spacer l...
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WO/2017/057650A1 |
The present invention reduces the number of terminals in a magnetic sensor and makes the magnetic sensor more compact. Provided is a magnetic sensor for detecting a magnetic field, wherein the magnetic sensor is provided with: a drive te...
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WO/2017/057046A1 |
The present art relates to a semiconductor device capable of improving yield. A volatile logic circuit of the present invention has a storage node, and stores inputted information. A plurality of nonvolatile elements are connected to the...
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WO/2017/052491A1 |
This disclosure is directed to aspect ratio modification via angled implantation. For a structure fabricated on a substrate during integrated circuit (IC) manufacture, achieving a certain target aspect ratio (AR) may be important for pro...
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WO/2017/052561A1 |
An embodiment includes an apparatus comprising: a first via layer between a substrate and a first metal layer; a second via layer between the first metal layer and second metal layer; a third via layer between the second metal layer and ...
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WO/2017/052586A1 |
An embodiment includes an apparatus comprising: a first semiconductor fin parallel to a second semiconductor fin; a first source line oblique to the first and second fins; a first contact coupling a first drain node of the first fin to a...
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WO/2017/052494A1 |
Embodiments related to magnetic tunnel junction devices including a spin Hall effect metal layer having a first portion with a first crystallographic phase adjacent to a free magnetic layer and a second portion with a second crystallogra...
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WO/2017/052573A1 |
Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for forming a step proximate an interface between a free magnetic layer and a dielectric laye...
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WO/2017/052631A1 |
MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include a multi-layered filter stack disposed between a fixed magnetic...
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WO/2017/052606A1 |
MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular MTJ material stacks with free magnetic layers are magnetically coupled through a metal mate...
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WO/2017/052622A1 |
A one-transistor (1T), one-selector (1S), one magnetic tunnel junction (1MTJ), spin torque transfer (STT), spin Hall effect (SHE), magnetic random access memory (MRAM) may be configured to provide separate write current and read current ...
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WO/2017/051829A1 |
Provided are: a Hall element wherein offset voltage fluctuation of the Hall element is able to be suppressed; a Hall sensor; and a lens module. This Hall element is provided with: a substrate (10); a magnetosensitive part (20) that is fo...
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WO/2017/052627A1 |
MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic la...
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WO/2017/052635A1 |
MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include one or more electrode interface material layers disposed betwe...
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WO/2017/048271A1 |
Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for interrupting the electrical continuity of a re-deposited layer that may form on one or mo...
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WO/2017/048270A1 |
Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for removing a re-deposited layer and/or interrupting the electrical continuity of a re-depos...
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WO/2017/048493A1 |
Magnetic Tunnel Junction (MTJ) devices particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer...
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WO/2017/048520A1 |
Provided are exemplary circuits including a magnetoresistive random- access memory (MRAM) and methods for fabricating the circuits. In an example, a circuit includes an MRAM. The circuit includes a bottom interconnect (206) in a bottom i...
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WO/2017/048509A1 |
Shared source line magnetic tunnel junction (MTJ) bit cells (300A) employing uniform MTJ connection patterns for reduced area are disclosed. In one aspect, a two (2) transistor, two (2) MTJ (2T2MTJ) bit cell includes a shared source line...
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WO/2017/044447A1 |
A magnetic tunnel junction (MTJ) is disclosed wherein a free layer has an interface with a tunnel barrier and a second interface with a metal oxide layer to promote perpendicular magnetic anisotropy (PMA) therein. A diffusion barrier is ...
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WO/2017/044675A1 |
An improved method for etching a magnetic tunneling junction (MTJ) structure is achieved. A stack of MTJ layers is provided on a bottom electrode 10. The MTJ stack is patterned to form a MTJ device 12 wherein sidewall damage or sidewall ...
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WO/2017/044132A1 |
Described is an apparatus which comprises: a substrate; and a magnet formed with one or more materials or a stack of materials with perpendicular magnetic anisotropy (PMA), wherein a magnetic moment of the magnet points mainly in a plane...
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WO/2017/044109A1 |
Described is an apparatus which comprises: a first non-magnetic conductor; a first spin orbit coupling (SOC) layer coupled to the first non-magnetic conductor; a first ferromagnet (FM) coupled to the SOC layer; a second FM; and an insula...
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WO/2017/041101A1 |
In described examples, a Graphene Hall sensor (GHS) (1101) has a modulated gate bias signal (1112) that alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage...
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WO/2017/034564A1 |
Described is an apparatus which comprises: a first ferromagnetic (FM) layer with magneto-strictive (MS) property; a layer operable to exert strain on the first FM layer; and a first anti-FM layer coupled to the layer and operable to exer...
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WO/2017/029720A1 |
For the purpose of providing a technique that enables easy control of the magnetic anisotropy magnetic field of a device that utilizes a TMR effect, a magnetic sensor according to the present invention comprises: a magnetic sensor unit 2...
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WO/2017/027221A1 |
Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) semiconductor elements is disclosed. Providing shadow-effect compensated fabrication of MTJ elements can provide reduced free layer sizing for enhanced MTJ operation...
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WO/2017/025659A1 |
A charge-carrier Hall-effect sensor comprising: a semiconductor or a semimetal layer; a pair of electric current contacts in electrical contact with the semiconductor or semimetal layer and separated in a first longitudinal direction alo...
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WO/2017/027148A1 |
A method of fabrication of a device (100) includes forming a first metallization layer (102) that is coupled to a logic device of the device. The method further includes forming a second metallization layer (161) that is coupled to a mag...
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WO/2017/024253A1 |
A method for fabricating artificial skyrmions and skyrmion lattices with a stable ground state at room temperature and in the absence of magnetic fields is provided. The lattices are formed by patterning vortex-state nanodots over macros...
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WO/2017/022351A1 |
The purpose of the present invention is to provide a magnetic detector that can be made not only smaller and thinner, but also more accurate. This magnetic detector (1) comprises: a substrate (S1); an MI element disposed on the substrate...
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WO/2017/018256A1 |
The present invention suppresses separation and/or cracking of a multilayer film that comprises a layer formed from a metal magnetic material during etching of the multilayer film. According to one embodiment of the present invention, a ...
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WO/2017/019134A1 |
Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to...
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WO/2017/017978A1 |
Provided is an element that exhibits high magnetoresistance output by utilizing a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a three-layer structure of ferromagnetic metal/ non-magnetic ...
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WO/2017/019847A1 |
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack (18) of MTJ layers is provided on a bottom electrode (14) in a substrate. The MTJ stack is etched to form a MTJ structure wherein portions of sidewa...
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WO/2017/014350A1 |
An electronic device comprises: a middle housing; a frame including a first frame and a second frame, each of which have one end respectively coupled to both the left and right sides of the middle housing; a body housing coupled to the f...
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WO/2017/015294A1 |
A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic%, and an adjoining second layer with a boron content from 1 to 20 atomic%. One of the ...
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WO/2017/013826A1 |
A phased-array antenna apparatus is provided with: a plurality of antennas (1); a plurality of magnetic oscillation element units (2) including magnetic oscillation elements; and a modulation unit (6). The modulation unit modulates the a...
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WO/2017/011289A1 |
Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having...
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WO/2017/010549A1 |
The present invention realizes a highly integrated high-capacity magnetic memory through miniaturization. The present invention can provide: a magnetoresistive element; and a magnetic memory using the magnetoresistive element, wherein th...
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WO/2017/002284A1 |
Provided is a battery having desired characteristics, and a charging/discharging method. A battery according to an embodiment of the present invention is provided with: a first electrode layer (6); a second electrode layer (7); and a cha...
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