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WO/2017/155510A1 |
Described is an apparatus which comprises: an interconnect including a stack of metal layers having a first non-alloy metal adjacent to a metal and a first templating layer. The first non-alloy metal is formed of a material which is sele...
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WO/2017/155507A1 |
Approaches for embedding spin hall MTJ devices into a logic processor, and the resulting structures, are described. In an example, a logic processor includes a logic region including fin-FET transistors disposed in a dielectric layer dis...
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WO/2017/155508A1 |
Approaches for integrating spin torque transfer magnetic random access memory (STT-MRAM) memory arrays into a logic processor, and the resulting structures, are described. In an example, a logic processor including a logic region includi...
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WO/2017/153883A1 |
The present disclosure concerns a magnetoresistive element (1) comprising: a storage layer (21) having a first storage magnetostriction; a sense layer (23) having a first sense magnetostriction; a barrier layer (22) between and in contac...
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WO/2017/155509A1 |
Described is an apparatus which input and output magnets, each configured to have six stable magnetic states including zero state, first state, second state, third state, fourth state, and fifth state, wherein the zero state is to point ...
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WO/2017/155511A1 |
Described is an apparatus which comprises: a first ferromagnet (FM) layer having a first end and a second end; a spin-orbit-coupling (SOC) layer adjacent to the first FM layer near the first end; and an inverse SOC (ISOC) layer adjacent ...
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WO/2017/149874A1 |
A magnetoresistive element 10 is provided with: a first laminated structure 20 having a first surface 20A, and a second surface 20B on the reverse side of the first surface 20A; and a second laminated structure 30, which is formed by lam...
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WO/2017/149831A1 |
[Problem] To provide a magnetic sensor having magnetic detection sensitivity that is enhanced by increased magnetic flux bending. [Solution] A magnetic sensor is provided with magnetic detection elements MR1, MR2 positioned on a plane P ...
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WO/2017/146706A1 |
In one example in accordance with the present disclosure a device is described. The device includes at least two memristive cells. Each memristive cell includes a memristive element to store one component of a complex weight value. The d...
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WO/2017/146644A1 |
Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangem...
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WO/2017/141999A1 |
Heat resistance of a tunnel magnetic resistance element is improved, and excellent magnetic resistance characteristics are acquired after heat treatment in a magnetic field at higher temperatures. A free magnetic layer (4) has: a ferroma...
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WO/2017/142751A1 |
A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, is prepared in a single sputter chamber without a vacuum break. A magnetic field sensor formed by using in situ solid s...
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WO/2017/139809A1 |
In described examples, an integrated device (200) includes a substrate (108) having a semiconductor surface layer (109) including functional circuitry (180), a lower metal stack (130) on the semiconductor surface layer (109), an interlev...
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WO/2017/135767A1 |
Disclosed is a memory device in which a lower electrode, a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are stacked on a substrate, and a diff...
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WO/2017/135251A1 |
The present invention addresses the problem of achieving an unprecedentedly high tunnel magnetic resistance (TMR) ratio using a barrier layer in which an MgAl2O4 type insulator material having a spinel structure is used. The problem can ...
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WO/2017/136851A1 |
Described examples include an electromagnetic sensing device (100) with a package substrate (102), a first die (110) mounted on the package substrate (102), and a second die (150) mounted on the package substrate (102). The first die (11...
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WO/2017/136564A1 |
A circuit implementing a magnetic tunnel junction (MTJ) device controls magnetization of the MTJ to control current through the device. The MJT device includes first and second magnetic layers separated by an insulating layer, where the ...
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WO/2017/134697A1 |
According to one embodiment of the present invention, a method for manufacturing a magnetoresistive effect element is characterized by having: a step for forming an Mg film on a substrate on which a reference layer is film-formed, and fi...
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WO/2017/131894A1 |
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves...
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WO/2017/131584A1 |
Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic storage layer. The m...
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WO/2017/127815A1 |
In described examples, an integrated circuit (100) has a substrate (101), a circuit (110), a core structure (130), a first encapsulation layer (136), a second encapsulation layer (138), and an oxide layer (140). The circuit (110) include...
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WO/2017/126397A1 |
The objective of the present invention is to configure a magnetic sensor that achieves a high SN ratio, surpassing that achieved by conventional TMR sensors and MI sensors. While the overall configuration of the magnetic sensor, excludin...
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WO/2017/122497A1 |
This semiconductor circuit comprises: a first circuit configured to use the voltage of a first node to generate an inverted voltage therefrom and to apply the inverted voltage to a second node; a second circuit configured to use the volt...
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WO/2017/115839A1 |
The present invention is provided with: an element array 10a that contains a plurality of tunnel magnetoresistive elements 20, each of which has a fixed magnetic layer 21, a free magnetic layer 22, and an insulation layer 23 provided bet...
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WO/2017/110534A1 |
Provided is a laminate film for a current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) element, said laminate film exhibiting high sensitivity, and demonstrating excellent linearity between an external magnetic field and a res...
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WO/2017/112959A1 |
Described is an apparatus which comprises: a 4-state input magnet; a first spin channel region adjacent to the 4-state input magnet; a 4-state output magnet; a second spin channel region adjacent to the 4-state input and output magnets; ...
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WO/2017/112439A1 |
Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a ...
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WO/2017/111895A1 |
Described is an apparatus which comprises: a first ferromagnet (FM) layer; a second FM layer; an exchange coupling layer adjacent to the first and second FM layers; and a third FM layer adjacent to exchange coupling layer. Described is a...
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WO/2017/111877A1 |
Described is an apparatus which comprises: a 4-state input magnet; a first spin channel region adjacent to the 4-state input magnet; a 4-state output magnet; a second spin channel region adjacent to the 4-state input and output magnets; ...
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WO/2017/111851A1 |
Memory cells with improved tunneling magnetoresistance ratio (TMR) are disclosed. In some embodiments such devices may include a magnetoresistive tunnel junction (MTJ) element coupled in series with a tunneling magnetoresistance enhancem...
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WO/2017/110834A1 |
[Problem] To provide a spintronic element which is capable of preventing deterioration of magnetic characteristics due to outward diffusion of boron, thereby having excellent magnetic characteristics, and which is capable of preventing v...
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WO/2017/100547A1 |
A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on...
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WO/2017/099702A1 |
Embodiments of the disclosure are directed to a magnetic tunneling junction (MTJ) that includes a diffusion barrier. The diffusion barrier can be disposed between two ferromagnetic layers of the MTJ. More specifically, the diffusion barr...
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WO/2017/099156A1 |
Provided is a magnetic sensor comprising the following: magnetic convergence plates 200; Hall elements 201, 202 which are respectively disposed on one surface of each of the magnetic convergence plates; wires N402, N404, N406, N408 which...
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WO/2017/098537A1 |
According to one embodiment of the present invention, a method for manufacturing a tunnel magnetoresistance effect element is characterized by having: a step for preparing a substrate on which a ferromagnetic layer is formed; a step for ...
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WO/2017/093602A1 |
An apparatus comprising: a passive array (202) of resistive elements (250); a row selector switch (204) and a column selector switch (206) configured to respectively connect a particular row and a particular column of resistive elements ...
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WO/2017/094889A1 |
[Problem] To provide a magnetism detecting device for detecting the magnetism in each of the X-Y-Z directions by forming magnetoresistive effect elements on inclined side surfaces of recessed sections formed in a substrate and a method f...
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WO/2017/094336A1 |
[Problem] To provide a magnetic field detection device in which the orientations of fixed magnetic layers in at least two magnetoresistance effect elements provided in a magnetic detection unit are aligned, thus enabling simultaneous for...
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WO/2017/094888A1 |
[Problem] To provide a magnetic detection device that detects magnetism in X-Y-Z directions respectively by forming magnetoresistance effect elements on inclined lateral surfaces of recesses formed in a substrate. [Solution] In the prese...
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WO/2017/090726A1 |
This spin current magnetization reversal element is provided with: a second strongly magnetic metal layer 1 in which the orientation of magnetization is variable; and spin orbital torque wiring 2 that extends in a direction intersecting ...
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WO/2017/090730A1 |
This spin current magnetization reversal element comprises: a first ferromagnetic metal layer that has a variable magnetization direction; and spin orbit torque wiring that is joined to the first ferromagnetic metal layer and that extend...
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WO/2017/090736A1 |
This spin current magnetization reversal-type magnetoresistive effect element is provided with: a magnetoresistive effect element comprising a substrate and, in order from the substrate side, a first strongly magnetic metal layer in whic...
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WO/2017/090728A1 |
This spin current magnetization reversal element is provided with: a first strongly magnetic metal layer in which the orientation of magnetization is variable; and spin orbital torque wiring that extends in a direction intersecting the l...
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WO/2017/091310A1 |
A seed layer stack (24) with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer (22) on a seed layer (21) such as Mg where the seed layer has a resputtering rate 2 to 30X tha...
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WO/2017/090739A1 |
This spin current magnetization reversal element comprises: a first ferromagnetic metal layer that has a variable magnetization direction; and spin orbit torque wiring that is joined to a first surface of the first ferromagnetic metal la...
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WO/2017/091189A1 |
Disclosed herein are electrical contacts for magnetoresistive random access memory (MRAM) devices and related memory structures, devices, and methods. For example, and electrical contact for an MRAM device may include: a tantalum region;...
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WO/2017/090733A1 |
This magnetoresistive effect element is provided with: a magnetoresistive effect element comprising a first strongly magnetic metal layer in which the orientation of magnetization is fixed, a second strongly magnetic metal layer in which...
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WO/2017/086481A1 |
This magnetic tunnel junction element (10) has a configuration wherein a reference layer (14) that is configured from a ferromagnetic material, a barrier layer (15) that contains O, a recording layer (16) that is configured from a ferrom...
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WO/2017/082373A1 |
An etching rate during plasma etching is made uniform. A plasma processing device 10 is provided with a holding structure 18 that holds a wafer W, and a processing container 12 that houses the holding structure 18. A method MT is provide...
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WO/2017/077871A1 |
[Problem] To provide a magnetic sensor wherein a sensor chip and a magnetic body are more reliably fixed to each other, said magnetic sensor enabling to achieve a height reduction. {Solution] This magnetic sensor is provided with: a sens...
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