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WO/2018/004698A1 |
Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between ...
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WO/2018/004648A1 |
Embodiments of the present disclosure describe apparatuses, methods, and systems associated with magnetoelectric cells. A magnetoelectric cell may include a magnetic tunnel junction that includes a fixed magnet layer and a free magnet la...
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WO/2018/003177A1 |
The objective of the present invention is to provide: an operation device which, when operated by an operator, can give the operator a favorable operation feeling by using a magnetorheological fluid; and a method for controlling said ope...
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WO/2018/004616A1 |
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a crystal texture region. The crystal texture region is operably coupled between regions ...
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WO/2017/222521A1 |
An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and inter...
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WO/2017/222038A1 |
The purpose of the present invention is to provide a magnetoresistive element that has a high magnetic resistance (MR) ratio and a suitable device resistance (RA) for device applications. This magnetoresistive element has a structure in ...
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WO/2017/222723A1 |
High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells are disclosed.In one aspect, an exemplary MRAM bit cell includes a coupling column interconnecting an access transist...
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WO/2017/221896A1 |
The present invention improves the structure of a free magnetic layer of a tunnel magnetoresistance element, and achieves magnetoresistance characteristics having high linearity. A tunnel magnetoresistance element comprises a fixed magne...
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WO/2017/213261A1 |
This exchange bias utilization-type magnetization reversal element is provided with: antiferromagnetic driving layer antiferromagnetism (1) comprising first region (1a) and second region antiferromagnetism (1b), and third region antiferr...
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WO/2017/212752A1 |
A magnetic sensor (1) is provided with: a substrate (10); a plurality of magnetoresistive elements, which are provided on the substrate (10), and which constitute a bridge circuit; and a plurality of pole pieces (31, 32), which are provi...
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WO/2017/212895A1 |
[Problem] To provide a magnetic tunnel junction element and a magnetic memory that have having a higher MR ratio, and make it possible to prevent a recording layer from being damaged when a film is formed. [Solution] A reference layer 11...
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WO/2017/213003A1 |
The purpose of the present invention is to provide a magneto-impedance sensor which is capable of further improving measurement accuracy of an external magnetic field. The present invention is provided with: a magneto-impedance element (...
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WO/2017/208880A1 |
A spin-current assist type magnetoresistance effect device (200) according to the invention of the present application is provided with: a spin-current assist type magnetoresistance effect element (100) including a magnetoresistance effe...
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WO/2017/208576A1 |
This magnetic memory element (100) is provided with: a conductive layer which contains a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) which is adjacent to the conductive layer and contains a f...
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WO/2017/208653A1 |
This nonvolatile memory cell is provided with: a laminated structure 11 formed by laminating each other a storage layer 20, which stores information corresponding to the magnetization direction, and a magnetization fixing layer 30, which...
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WO/2017/209169A1 |
A magnetic sensor provided with: first magnetic resistance elements (120a, 120b); second magnetic resistance elements (130a, 130b); an insulation layer (30); and, among a first magnetic member (40) and a second magnetic member (50) locat...
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WO/2017/204151A1 |
[Problem] To improve the detecting accuracy of a magnetic sensor in which four magnetosensitive elements are bridge-connected. [Solution] This magnetic sensor is provided with magnetic layers 41 to 43 provided on a surface of a sensor bo...
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WO/2017/199787A1 |
This magnetic sensor is equipped with: a substrate (110), which has an upper surface (111), and which is provided with a trench section (112) having an inner surface connected to the upper surface (111); and a first magnetoresistive elem...
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WO/2017/199701A1 |
A sensor module 1 has: an electronic circuit 3 for performing pre-set processing; a substrate 2 on which the electronic circuit 3 is disposed; a pin header 5, one end part of which is folded and joined to a pad 4 provided to the substrat...
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WO/2017/196436A1 |
A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a n...
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WO/2017/183574A1 |
This domain wall-utilizing spin MOSFET (100) is provided with: a domain wall drive layer (1) comprising a domain wall (DW), a first region (1a), a second region (1b), and a third region (1c) positioned between the first region and the se...
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WO/2017/183354A1 |
A magnetic storage element includes a first magnetic layer having a magnetization easy axis in a direction perpendicular to a surface of the first magnetic layer. A first non-magnetic layer is on the first magnetic layer. A second magnet...
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WO/2017/183573A1 |
This domain wall-utilizing analog memory element (100) is provided with: a domain wall drive layer (1) comprising a domain wall (DW), a first region (1a), a second region (1b), and a third region (1c) positioned between the first region ...
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WO/2017/178704A1 |
The invention relates to a magnonic element and a method of redirecting spin waves (301, 302, 303). The element comprises a magnonic layer (35) capable of conveying spin waves (301, 302, 303). In addition, there is provided at least one ...
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WO/2017/176566A1 |
A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally...
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WO/2017/176217A1 |
Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first and a second memory element each having a first electrode and a second electrode, a first access transistor having a first controlled elec...
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WO/2017/172575A1 |
An electromagnetic coupler assembly includes a handle wafer having an oxide layer disposed on a first surface thereof. A layer of active semiconductor is disposed on the oxide layer and includes a voltage terminal to receive a supply vol...
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WO/2017/171848A1 |
Techniques are disclosed for carrying out ferromagnetic resonance (FMR) testing on whole wafers populated with one or more buried magnetic layers. The techniques can be used to verify or troubleshoot processes for forming the buried magn...
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WO/2017/171716A1 |
Approaches for an interconnect cladding process for integrating magnetic random access memory (MRAM) devices, and the resulting structures, are described. In an example, a memory structure includes an interconnect disposed in a trench of...
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WO/2017/169147A1 |
According to one embodiment of the present disclosure, a non-volatile memory element is provided with: a first electrode and a second electrode, which are disposed facing each other; a first magnetic material layer and a second magnetic ...
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WO/2017/169291A1 |
[Problem] To make it possible to further improve the magnetoresistance change rate without deteriorating reliability as an element. [Solution] Provided is a magnetoresistive element that is provided with: a storage layer wherein the magn...
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WO/2017/171730A1 |
Described is an apparatus which comprises: a heat spreading layer; a first transition metal layer adjacent to the heat spreading layer; and a magnetic recording layer adjacent to the first transition metal layer. Described is an apparatu...
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WO/2017/171840A1 |
Techniques are disclosed for forming a logic device including integrated spin-transfer torque magnetoresistive random-access memory (STT-MRAM). In accordance with some embodiments, one or more magnetic tunnel junction (MTJ) devices may b...
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WO/2017/171837A1 |
A monocrystalline metal-oxide stack including a ferroelectric (FE) tunneling layer and a buffer layer is epitaxially grown on a growth substrate. A first poly crystalline metal electrode layer is deposited over the tunneling layer. A bon...
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WO/2017/172209A1 |
Embodiments include apparatuses, systems, and methods including a memory apparatus including a plurality of bit cells, wherein each of the plurality of bit cells correspond to a respective weight value and include a switch device that ha...
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WO/2017/171718A1 |
Approaches and structures for unipolar current switching in perpendicular magnetic tunnel junction (pMTJ) devices through reduced bipolar coercivity are described. In an example, a memory array includes a plurality of bitlines and a plur...
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WO/2017/171795A1 |
Damascene-based approaches for fabricating a pedestal for a magnetic tunnel junction (MTJ) device, and the resulting structures, are described. In an example, a magnetic tunnel junction (MTJ) device includes a metal line disposed in a di...
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WO/2017/169540A1 |
[Problem] To improve the reliability of a memory element as an element. [Solution] Provided is a memory element configured by arraying, on a substrate, multiple magnetic resistance elements each having an MTJ structure wherein, in each o...
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WO/2017/169156A1 |
[Problem] To increase detection output linearity, reduce hysteresis, and increase detection sensitivity in an equilibrium-type magnetic field detection device that uses a feedback coil. [Solution] An equilibrium-type magnetic field detec...
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WO/2017/171747A1 |
Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs), and the resulting structures, are described. In an example, a memory structure includes a perpendicular magnetic tunnel junction (pMTJ) element dispose...
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WO/2017/171869A1 |
An apparatus including an array of memory cells arranged in a grid defined by word lines and bit lines in a generally orthogonal orientation relative to one another, a memory cell including a resistive memory component and an access tran...
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WO/2017/164229A1 |
[Problem] To provide a measurement method and measurement system for the thermal stability index of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for a semiconductor integrated ...
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WO/2017/165058A1 |
A seed layer stack (25) in a magnetic tunnel junction (MTJ) with a smooth top surface is formed by sputter deposition of alternating layers of Ni (26) and X (27), wherein X is one of Mo, Ru, Nb, Zr, Rh, W, Os, Ir, and Hf. An uppermost Ni...
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WO/2017/164646A2 |
Provided are an MTJ structure having perpendicular magnetic anisotropy and a magnetic element including the same. The MTJ structure having perpendicular magnetic anisotropy comprises: a substrate; a perpendicular magnetic anisotropy-indu...
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WO/2017/163471A1 |
[Problem] To reduce the size and cost of a magnetic sensor suitable for a closed loop control. [Solution] The present invention is provided with: a magnetoresistive effect element MR1, which is electrically connected between terminals 41...
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WO/2017/158517A1 |
A magnetoresistive-based signal shaping circuit (100) for audio applications comprising: a field emitting device (4) configured for receiving an input current signal (41) from an audio signal source and for generating a magnetic field (4...
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WO/2017/161082A1 |
In described examples, a method comprises forming an etch stop layer (151), a first titanium layer (312), a magnetic core (130), a second titanium layer (342), and patterning the first and second titanium layers (312, 342). The etch stop...
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WO/2017/160311A1 |
Damascene-based approaches for embedding spin hall MTJ devices into a logic processor, and the resulting structures, are described. In an example, a logic processor includes a logic region including a metallization layer. The logic proce...
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WO/2017/158900A1 |
[Problem] To provide a magnetic sensor not susceptible to an environmental magnetic field. [Solution] The present invention is provided with magnetic detection elements MR1-MR4 positioned on a first plane P1, and a magnetic body 30A that...
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WO/2017/159432A1 |
This magnetic memory is provided with: a plurality of magnetoresistance effect elements including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer configured to have a variable ma...
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