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WO/2018/096992A1 |
The purpose of the present invention is to provide a physical vapor-deposition target member that has low deterioration of a foundation layer due to oxidation during formation of a physical vapor-deposition film, that produces few defect...
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WO/2018/092611A1 |
Provided is high-speed, large-scale, non-volatile skyrmion flash memory that has low power consumption, that does not result in erroneous writing, and that comprises a circuit having good detection sensitivity of stored data. In addition...
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WO/2018/092610A1 |
Provided is high-speed, large-scale, non-volatile skyrmion random accessory memory that prevents erroneous writing and erroneous erasing, that comprises a circuit having good detection sensitivity of stored data, that results in little l...
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WO/2018/091879A1 |
Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves s...
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WO/2018/084774A1 |
A spin oscillator device (1) comprising a first spin Hall effect nano-oscillator, SHNO (2), having an extended multilayered magnetic thin-film stack (2), wherein a nano-constriction, NC, (6) is provided in said magnetic film stack (2) pr...
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WO/2018/084007A1 |
A magnetoresistive effect device 100 is characterized in having: an MR unit 20 having an input port 9a, an input-side signal line 7, magnetoresistive effect elements 1a, 1b, and a magnetic field generation signal line 18; and an output u...
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WO/2018/080159A1 |
Disclosed are a structure and an operating method for a spin synapse device using magnetic domain wall movement by means of spin orbit torque. Magnetization reversal of a free layer of the device is enabled by means of a current having a...
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WO/2018/078575A1 |
Equipment for horizontal directional drilling (HDD), comprising a drilling head (10) which in turn comprises a drill body (11), at least one rotating (20) and/or hammering (21) perforating member mounted on said drill body (11) and perfo...
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WO/2018/079931A1 |
A magnetoresistive memory module used as a main memory of a computing device is provided. A plurality of memory chips is mounted on a printed circuit board and a memory controller performs data scrubbing. Each memory chip comprises a plu...
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WO/2018/079404A1 |
A first magnetoresistive element (2a) and a second magnetoresistive element (2b) respectively have an easy axis of magnetization perpendicular to a surface (11), and are provided with: a fixed layer (21) for which the magnetization direc...
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WO/2018/074104A1 |
This magnetic element (101) comprises: a laminate (10A) formed by layering a plurality of insulating base-material layers made of the same resin material; a coil (3) formed in the laminate (10A); a magnetic body member (2) housed inside ...
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WO/2018/074724A1 |
The present invention relates to a semiconductor device. A semiconductor device (1000) based on a spin orbit torque (SOT) effect, according to an embodiment of the present invention, comprises: a first electrode; and a first cell and a s...
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WO/2018/071162A1 |
A process sequence is provided to provide an ultra-smooth (0.2 nm or less) bottom electrode surface for depositing magnetic tunnel junctions thereon. In one embodiment, the sequence includes forming a bottom electrode pad through bulk la...
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WO/2018/069389A1 |
The invention relates to a method for generating a plurality of second currents (C2), each having a second frequency component, from a first electric current (C1) having a first frequency, said method comprising the following steps: a fr...
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WO/2018/070112A1 |
This magnetic detection element is provided with: an element part (20) which includes a plurality of linear sections (21) arranged in parallel with one another and a plurality of connection sections (22) connecting the plurality of linea...
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WO/2018/067070A1 |
A magnetoresistance sensor There is provided a magnetoresistance sensor comprising a graphene-black phosphorus hybrid structure, wherein the graphene-black phosphorus hybrid structure comprises a black phosphorus layer and a graphene lay...
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WO/2018/061435A1 |
This spin current magnetization reversal element is provided with: a ferromagnetic metal layer; and a spin orbital torque wiring extending in a first direction that intersects the lamination direction of the ferromagnetic metal layer, an...
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WO/2018/063255A1 |
A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack and a fixed magnetic stack separated by a dielectric tunneling layer. The free magnetic stack in...
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WO/2018/063286A1 |
An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is p...
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WO/2018/063159A1 |
The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers an...
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WO/2018/061710A1 |
The purpose of the present invention is to provide a magnetoresistive effect element (10) having a larger magnetoresistive effect. A magnetoresistive effect element according to the present invention comprises a substrate (11), a first f...
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WO/2018/063338A1 |
Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is...
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WO/2018/063177A1 |
The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a spin transfer torque element is connected to a PMOS transistor. In one embodiment, the spin transfer torque element may have a fixed side...
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WO/2018/063357A1 |
Methods and apparatus for complex number generation and operation on a chip are disclosed. A disclosed logic device includes a first magnet with a first preferred direction of magnetization to polarize a spin of electrons in the first di...
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WO/2018/063355A1 |
A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack that includes a plurality of magnetic layers interleaved with a plurality of non-magnetic insert...
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WO/2018/060785A1 |
A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer(11) and a free magnetic layer(13), and an insulating barrier layer(12) there-between. Each of the magnetic layers has an out-of-plane mag...
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WO/2018/053496A1 |
Discussed herein are methods of orienting one-dimensional and two-dimensional materials via the application of stationary and rotating magnetic fields. The oriented one-dimensional and two-dimensional materials may exhibit macroscopic pr...
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WO/2018/052062A1 |
Provided is a magnetoresistance effect device (1000) including: a first magnetoresistance effect element (101) including a first ferromagnetic layer (102), a second ferromagnetic layer (104), and a first spacer layer (103); a metal layer...
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WO/2018/047736A1 |
A magneto-resistive device 100 is characterized in comprising first magneto-resistive elements 101a, 101b, a second magneto-resistive element 101c, a first port 109a, a second port 109b, a signal line 107, and a direct current input term...
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WO/2018/044127A1 |
The present invention provides a neuromorphic device and a method for driving the same, the neuromorphic device comprising: a channel unit having a magnetization direction changing according to integration of multiple pieces of data; a f...
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WO/2018/042732A1 |
In order to provide a magnetic tunnel junction element having a higher TMR ratio and high heat resistance, and a method for manufacturing the magnetic tunnel junction element, at the time of constituting a magnetic tunnel junction elemen...
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WO/2018/043702A1 |
This magnetoresistive effect element comprises: a first ferromagnetic metal layer; a second ferromagnetic metal layer; and a tunnel barrier layer that is arranged between the first ferromagnetic metal layer and the second ferromagnetic m...
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WO/2018/043377A1 |
Provided is a method for producing a magnetic memory, by which a magnetic memory comprising a magnetic tunnel junction element that exhibits a high element performance is able to be easily produced. This method for producing a magnetic m...
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WO/2018/039349A1 |
Provided are a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device includes a semiconductor substrate, a first and a second diffusion regions formed under a surface of the semiconductor substrate...
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WO/2018/037634A1 |
Provided is a magnetic sensor 1 which is provided with a magnetoresistive effect element that is not susceptible to decrease in the sensitivity even if stored in a high temperature environment for a long period of time, specifically a ma...
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WO/2018/037777A1 |
This magnetoresistive element 10 is obtained by laminating a lower electrode 31, a first base layer 21A formed of a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetiza...
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WO/2018/030224A1 |
An exchange coupled film 10 of the present invention comprises an antiferromagnetic layer 2, a fixed magnetic layer 3, and a free magnetic layer 5 that are stacked. The antiferromagnetic layer 2 comprises a PtCr layer 2A and an XMn layer...
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WO/2018/029883A1 |
[Problem] To provide: an exchange-coupling film having a large magnetic field (Hex) in which the magnetic direction of a fixed magnetic layer inverts, and having high stability in high temperature conditions; and a magneto-resistive elem...
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WO/2018/026529A1 |
Aspects disclosed include reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices. In one example, a width of a bottom electrode of an MTJ device is provided to be less than a width of the MTJ stack of t...
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WO/2018/022385A1 |
A memory cell including a magnetic Josephson junction (MJJ) device is provided. The MJJ device (300) includes a free magnetic layer (310), a non-magnetic layer (320), and a fixed magnetic layer (312). The free magnetic layer comprises a ...
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WO/2018/021706A1 |
A nano-oscillation element according to one embodiment of the present invention comprises: a first fixed magnetic layer; a second fixed magnetic layer arranged on the first fixed magnetic layer; a free magnetic layer interposed between t...
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WO/2018/020730A1 |
In order to provide a magnetic tunnel coupling element having a higher TMR ratio and making it possible to prevent damage to a record layer and a fixed layer during film formation, and a method for manufacturing the magnetic tunnel coupl...
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WO/2018/012272A1 |
This magnetic sensor is provided with a magnetoresistive element, a Hall element, and a detection circuit to which a signal from the magnetoresistive element and a signal from the Hall element are input. The detection circuit has an outp...
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WO/2018/010241A1 |
Disclosed in the present invention is a method for controlling spin wave transmission, the invention relating to the field of spintronics. In the present method, the internal exchange intensity of a magnetic waveguide material can be eff...
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WO/2018/008176A1 |
This current sensor is provided with: at least one permanent magnet (110); and at least one magnetosensitive body that detects, in a state wherein a bias magnetic field is being applied thereto from the permanent magnet (110), a magnetic...
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WO/2018/008525A1 |
A magnetic sensor (1) is provided with: a substrate (2) that has a main surface (21); a free layer (3) that has an magnetic easy-axis direction which is an in-plane direction parallel to the main surface; an intermediate layer (4) that i...
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WO/2018/006879A1 |
An anisotropic magnetic resistance and current sensor without a setting and resetting apparatus, comprising a substrate (170). An exchange bias layer (160) is deposited on the substrate (170); the exchange bias layer (160) is constituted...
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WO/2018/004608A1 |
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a thermal resistor. The thermal resistor is operably coupled between the MTJ body and the...
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WO/2018/004612A1 |
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a heating region. The heating region is disposed between the MTJ body and the electrode. ...
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WO/2018/004548A1 |
A three dimensional (3D) array of magnetic random access memory (MRAM) bit-cells is described, wherein the array includes a mesh of: a first interconnect extending along a first axis; a second interconnect extending along a second axis; ...
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